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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP60NE06L-16

Name: STP60NE06L-16
Brand: STMicroelectronics
SKU: STP60NE06L-16
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP60NE06L-16

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP60NE06L-16.pdf

Description:: MOSFET N-CH 60V 60A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP60NE06L-16 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 60 V V_DS, 60 A continuous drain current at T_C = 25 °C, and 0.014 Ω typical R_DS(on) at V_GS = 5 V. It features avalanche ruggedness, low gate charge (55 nC), and 175 °C maximum junction temperature. It is used in high-current DC-DC converters and automotive solenoid drivers where robust unclamped inductive switching is required.

For engineers reviewing the STP60NE06L-16 datasheet, STP60NE06L-16 pinout, STP60NE06L-16 application, or STP60NE06L-16 equivalent, key selection criteria include its 60 V breakdown voltage, 0.014 Ω on-resistance at 5 V gate drive, 60 A continuous current rating, avalanche energy rating of 400 mJ, and TO-220 thermal resistance of 0.94 °C/W.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on). Its gate threshold voltage (1–2.5 V) supports direct logic-level drive, and its low Q_g (55 nC) and Q_gd (30 nC) reduce switching losses in hard-switched topologies.

The device is characterized for unclamped inductive switching (UIS) with 60 A repetitive avalanche current and 400 mJ single-pulse energy. Its source-drain diode exhibits 1.5 V forward voltage at 60 A and 85 ns reverse recovery time under specified di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V nominal bus systems with margin.
R_DS(on)	0.014 Ω (typ.) at V_GS = 5 V - Enables <0.5 W conduction loss at 60 A, reducing heatsink requirements.
I_D (cont)	60 A at T_C = 25 °C - Supports high-current motor/solenoid loads without parallel devices.
Q_g	55 nC - Low total gate charge enables fast turn-on with modest gate driver current (e.g., 1 A peak).
E_AS	400 mJ - Specifies single-pulse avalanche energy handling capability under inductive turn-off stress.
T_j(max)	175 °C - Allows operation in under-hood automotive environments with derated power at elevated case temperatures.
R_th(j-c)	0.94 °C/W - Junction-to-case thermal resistance determines minimum heatsink size for 150 W dissipation.

Pinout & Package

TO-220 package with standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain and must be insulated from heatsink unless circuit topology permits common-drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤±15 V drive; 100 nA leakage ensures low static power consumption.
Pin 2	Drain (Tab)	Main high-side current path; electrically tied to metal tab; must be isolated or referenced per layout.
Pin 3	Source	Return path for load current; reference node for gate drive; connects to PCB ground plane.

Key Features

Feature	Design Value
Avalanche ruggedness	Rated for 60 A repetitive avalanche current and 400 mJ single-pulse energy-enables reliable operation in inductive switching without external snubbers.
Low R_DS(on)	0.014 Ω at 5 V gate drive reduces conduction loss by >30% vs. comparable 60 V MOSFETs requiring 10 V drive.
High current capability	60 A continuous rating at 25 °C case temperature supports single-device solutions in 500 W–1 kW power stages.
Low gate charge	55 nC total gate charge minimizes driver power and propagation delay in high-frequency PWM (≤100 kHz) applications.

Applications

Automotive Solenoid Drivers

DC-DC Converter Primary Switch

Use Scenario: Driving 12 V/24 V fuel injectors or transmission solenoids in engine control units.

IC Role / Device Role / Timing Role: High-side or low-side switching element handling 30–60 A pulsed loads with fast turn-on/turn-off.

Use Value: Avalanche rating absorbs inductive kickback without clamping diodes; 175 °C rating sustains under-hood ambient temperatures.

Use Scenario: Primary-side switch in 48 V–12 V buck or synchronous rectifier stage in telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 50–100 kHz with low R_DS(on) and low Q_g to minimize conduction and switching losses.

Use Value: 0.014 Ω R_DS(on) limits I²R loss to <0.5 W at full load; 55 nC Q_g enables efficient gate driving with integrated controllers.

Industrial Relay Drivers

Motor Control H-Bridge Leg

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or PLC output modules.

IC Role / Device Role / Timing Role: Low-side switch interfacing microcontroller GPIO directly via logic-level gate threshold (1–2.5 V).

Use Value: Threshold voltage allows direct 3.3 V/5 V MCU drive; 60 A rating supports relay coils up to 100 W without derating.

Use Scenario: Upper or lower leg in 24–48 V brushed DC motor drives for robotics or industrial automation.

IC Role / Device Role / Timing Role: Power switch in half-bridge configuration with bootstrap or isolated gate drive.

Use Value: 175 °C T_j(max) and 0.94 °C/W R_th(j-c) support sustained 30 A RMS current in compact enclosures with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	R_DS(on) = 0.028 Ω (at 10 V), higher gate charge (71 nC), no avalanche rating specified	Lacks UIS qualification; requires external protection in inductive switching	Lower cost but unsuitable for unclamped inductive loads without added circuitry
STP60NF06	Same V_DS/I_D ratings but R_DS(on) = 0.016 Ω (at 10 V); requires 10 V gate drive for full performance	Higher V_GS(th) (2–4 V) limits compatibility with 3.3 V logic	Better thermal performance in TO-220FP variant but less suitable for low-voltage gate drive

Compared with IRFZ44N and STP60NF06, STP60NE06L-16 offers superior avalanche ruggedness and lower gate drive voltage sensitivity-critical for automotive and industrial inductive load switching where reliability under transient stress is non-negotiable.

Availability

STP60NE06L-16 is available at Aetrix Electronics and suitable for automotive solenoid drivers, DC-DC converter primary switches, and industrial relay drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP60NE06L-16 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices.

This part belongs to ST's STripFET™ II power MOSFET product line, engineered for high-efficiency, high-reliability switching in automotive, industrial, and consumer power conversion systems.

FAQ

Is STP60NE06L-16 suitable for 3.3 V microcontroller gate drive?

Yes. Its gate threshold voltage range is 1.0–2.5 V, and it delivers 60 A drain current with only 5 V gate drive. A 3.3 V GPIO can reliably turn it on in most resistive or moderately inductive loads, though gate resistor selection must ensure adequate dV/dt control during switching.

What is the maximum safe operating frequency for this MOSFET?

While not frequency-rated, its 55 nC gate charge and 155 ns rise time support reliable operation up to 100 kHz in hard-switched topologies. Above this, switching losses increase significantly-thermal design must account for combined conduction and switching dissipation at target duty cycle and load current.

Does STP60NE06L-16 require a heatsink in continuous 40 A operation?

Yes. At 40 A and 0.014 Ω R_DS(on), conduction loss is ~22.4 W. With R_th(j-c) = 0.94 °C/W and max T_j = 175 °C, even at 25 °C ambient, junction temperature exceeds limit without heatsinking. A heatsink with ≤1.5 °C/W total thermal resistance is recommended.

Can STP60NE06L-16 replace STP60NE06L-16FP in the same PCB footprint?

No. Though both share the same electrical specs, STP60NE06L-16 uses TO-220 while STP60NE06L-16FP uses TO-220FP-a different mechanical outline with altered lead spacing and body dimensions. Mounting holes and pad layout are incompatible; board redesign is required for substitution.

STP60NE06L-16 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 4150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP60NE06L-16 FAQ

1.How can I place an order for STP60NE06L-16 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP60NE06L-16 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP60NE06L-16 reliable?

The price and inventory of STP60NE06L-16 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP60NE06L-16 is usually 5 days.

3.What payment methods are accepted for STP60NE06L-16?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP60NE06L-16 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP60NE06L-16?

STP60NE06L-16 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP60NE06L-16 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP60NE06L-16?

For technical support, including STP60NE06L-16 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP60NE06L-16 requirements.

6.How does Aetrix verify that STP60NE06L-16 is sourced from the original manufacturer or authorized distributors?

All STP60NE06L-16 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP60NE06L-16 meets industry standards.

7.What is the process for return or replacement of STP60NE06L-16?

All STP60NE06L-16 units undergo pre-shipment inspection (PSI). If there is an issue with STP60NE06L-16, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP60NE06L-16 part is unused and in its original packaging.

Return procedure for STP60NE06L-16:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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