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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6N52K3

Name: STP6N52K3
Brand: STMicroelectronics
SKU: STP6N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6N52K3.pdf

Description:: MOSFET N-CH 525V 5A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP6N52K3 from STMicroelectronics is an N-channel 525 V, 1.2 Ω (max), 5 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested operation, 12 V/ns dv/dt capability, and built-in Zener-protected gate. It serves as a high-voltage switching device in offline SMPS primary-side circuits, PFC stages, and industrial motor drives requiring robust unclamped inductive switching.

For engineers reviewing the STP6N52K3 datasheet, STP6N52K3 pinout, STP6N52K3 application, or STP6N52K3 equivalent, this page delivers verified electrical ratings, thermal data, diode recovery behavior, gate charge profile, and real-world SOA boundaries - all critical for hard-switched flyback, resonant LLC, and high-reliability AC-DC converter design.

Technical Context

This MDmesh™ K3 device employs an optimized vertical structure to reduce R_DS(on) while maintaining high V_(BR)DSS and low C_oss (54 pF typ.). Its 1.79 °C/W junction-to-case thermal resistance enables 70 W continuous dissipation at T_C = 25 °C with minimal heatsinking.

The integrated source-drain diode exhibits 206 ns reverse recovery time (T_j = 25 °C) and 1.4 µC Q_rr, with Zener-protected gate (±30 V breakdown) eliminating need for external gate clamping. Avalanche energy rating of 110 mJ (E_AS) supports rugged unclamped inductive load handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	525 V - Withstands full mains rectified voltage (e.g., 375 V DC bus + margin) without breakdown in offline converters.
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 2.5 A - Enables <1.5 W conduction loss at 3.5 A RMS in 65 kHz flyback primary switch.
Q_g	26 nC - Low gate charge reduces driver power requirement and enables fast 10 ns turn-on delay with 4.7 Ω gate resistor.
E_AS	110 mJ - Supports single-pulse unclamped inductive switching up to 2.5 A without failure under worst-case SOA conditions.
dv/dt	12 V/ns - Resists false triggering during high-slew-rate voltage transients in bridge-leg or half-bridge configurations.
T_j max	150 °C - Allows operation in sealed industrial enclosures with ambient up to 85 °C when mounted on FR-4 PCB with 1 in² copper pour.
C_oss	54 pF - Minimizes capacitive switching loss and improves zero-voltage switching (ZVS) feasibility in resonant topologies.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; standard 3-pin surface-mount outline with gull-wing leads. Tab is electrically connected to drain terminal and must be soldered to PCB copper pour for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires ≤ ±30 V drive; Zener-clamped internally to prevent ESD damage.
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power terminal; thermally coupled to PCB copper; must be isolated from other layers if not referenced to ground.
3 (S)	Source	Power return path and gate reference node; connects to current-sense resistor or low-side driver return in half-bridge layouts.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 110 mJ single-pulse avalanche energy - eliminates screening risk in high-inductance PFC chokes.
Extremely high dv/dt capability	12 V/ns rated - prevents spurious turn-on during fast voltage transitions in phase-shifted full-bridge designs.
Improved diode reverse recovery	206 ns t_rr, 1.4 µC Q_rr at 25 °C - reduces switching loss and EMI in synchronous rectifier replacement applications.
Zener-protected gate	±30 V intrinsic gate-source Zener - removes need for external TVS, simplifying layout and reducing BOM count in space-constrained adapters.
Low C_iss/C_oss ratio	670 pF / 54 pF = 12.4 - enhances Miller-effect immunity and enables stable gate drive with moderate gate resistors.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input offline adapter with quasi-resonant flyback controller.

IC Role / Device Role / Timing Role: High-voltage primary-side switch operating at 65–130 kHz, handling 525 V peak drain stress during line surges.

Use Value: 1.2 Ω R_DS(on) limits conduction loss to <1.1 W at 3.2 A peak, while 12 V/ns dv/dt rating prevents false triggering during burst-mode transitions.

Use Scenario: 1 kW industrial boost PFC stage with interleaved dual-phase topology.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), switching at 60–100 kHz with 5 A average current.

Use Value: 26 nC Q_g enables efficient gate driving with low-power ICs; 110 mJ E_AS ensures reliability during grid transient events.

Motor Drive Half-Bridge Leg

LED Driver High-Voltage Buck

Use Scenario: 300 W BLDC inverter for HVAC fan control with discrete gate drivers.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase half-bridge, commutating inductive motor current with 20 A pulsed drain current capability.

Use Value: 20 A I_DM and 1.79 °C/W R_thj-case allow short-term overload without thermal runaway; Zener gate protection withstands gate-loop ringing.

Use Scenario: 150 W constant-current LED driver for street lighting using high-voltage buck topology.

IC Role / Device Role / Timing Role: Main switching element regulating 400 V DC bus to drive 35 V/4.3 A LED string at 100 kHz.

Use Value: 54 pF C_oss minimizes turn-off loss; 525 V V_(BR)DSS accommodates 400 V bus + 30% surge margin without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF6N52K3	TO-220 package, identical die and electrical specs; higher R_thj-case (1.25 °C/W vs 1.79 °C/W).	Better suited for through-hole prototyping or forced-air cooled modules where PCB footprint is not constrained.	Select when mechanical mounting flexibility or legacy TO-220 compatibility outweighs SMT density and thermal performance needs.
IPP60R190C7	600 V, 190 mΩ, CoolMOS™ C7; lower R_DS(on) but higher Q_g (42 nC) and no built-in Zener gate protection.	Optimized for high-efficiency 100+ kHz resonant converters; requires external gate clamp and careful layout for dv/dt immunity.	Prefer for ultra-high-efficiency server PSU designs where conduction loss dominates and gate drive overhead is acceptable.

Compared with STF6N52K3, STP6N52K3 offers superior PCB thermal coupling and smaller footprint; versus IPP60R190C7, it trades higher R_DS(on) for integrated gate protection and lower Q_g, simplifying robustness-critical industrial designs.

Availability

STP6N52K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STP6N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to the MDmesh™ K3 family - engineered specifically for high-voltage, high-frequency switching in offline power supplies and industrial motor controls, balancing avalanche ruggedness with dynamic efficiency.

FAQ

Is STP6N52K3 pin-compatible with STD6N52K3?

Yes - both share identical DPAK (TO-252) pinout (G-D-S), same marking layout, and identical electrical specifications per DS5919 Rev 3. The difference lies only in tape-and-reel packaging: STD6N52K3 uses standard DPAK type A tape, while STP6N52K3 uses type E tape with tighter pitch tolerance (±0.2 mm over 10 pitches). No PCB or schematic changes are required.

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is recommended for hard-switched applications to limit peak gate current (<2 A) while maintaining 10 ns turn-on delay and 31 ns turn-off delay. For ZVS or resonant topologies, values up to 47 Ω may be used to dampen ringing without compromising timing stability, given the device's 4 Ω intrinsic gate resistance.

Does the built-in Zener protect against negative gate voltage transients?

Yes - the bidirectional gate-source Zener (±30 V breakdown) clamps both positive and negative transients. At −30 V, it conducts to limit reverse gate stress during Miller-induced negative spikes, preventing oxide damage. This eliminates need for external back-to-back Zeners in most gate-drive circuits.

Can STP6N52K3 replace STB6N52K3 in existing designs?

No - STB6N52K3 uses D²PAK (TO-263) package with different thermal pad geometry and lead pitch. While electrically identical, the DPAK footprint of STP6N52K3 does not match D²PAK land patterns. Mechanical redesign is required; thermal performance will also differ due to higher R_thj-pcb (50 °C/W vs ~35 °C/W for D²PAK).

STP6N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6N52K3 FAQ

1.How can I place an order for STP6N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6N52K3 reliable?

The price and inventory of STP6N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6N52K3 is usually 5 days.

3.What payment methods are accepted for STP6N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6N52K3?

STP6N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6N52K3?

For technical support, including STP6N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6N52K3 requirements.

6.How does Aetrix verify that STP6N52K3 is sourced from the original manufacturer or authorized distributors?

All STP6N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6N52K3 meets industry standards.

7.What is the process for return or replacement of STP6N52K3?

All STP6N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP6N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6N52K3 part is unused and in its original packaging.

Return procedure for STP6N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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