STMicroelectronics STP6N80K5

Overview

STP6N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 vertical structure technology, rated for 800 V V_DS, 1.6 Ω max R_DS(on) at V_GS = 10 V and 4.5 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (13 nC), 100% avalanche-tested ruggedness, and Zener-protected gate, targeting high-efficiency switch-mode power supplies and industrial AC-DC converters.

For engineers reviewing the STP6N80K5 datasheet, STP6N80K5 pinout, STP6N80K5 application, or STP6N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 1.3 Ω typical R_DS(on), 13 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and DPAK (TO-252) package compatibility with standard PCB layouts.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 800 V V_BR(DSS) and 1.6 Ω R_DS(on) enable operation in primary-side switching of >400 V AC-input offline SMPS, while the 13 nC Q_g and 9.6 nC Q_gd support high-frequency PWM control up to 100 kHz.

The integrated source-drain diode features 280 ns t_rr at 25 °C and 450 ns at 150 °C, with 2.2 µC Q_rr, enabling hard-switched PFC and resonant topologies. The device is 100% tested for unclamped inductive switching (UIS) up to 85 mJ E_AS, ensuring robustness in overload and fault conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standardized 3-pin surface-mount outline compliant with JEDEC MO-238.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP6N80K5, STP6N80K6 offers better conduction efficiency but sacrifices avalanche ruggedness, while IPP60R190C7 trades voltage headroom and gate drive simplicity for lower R_DS(on)-making STP6N80K5 optimal for universal-input, space-constrained, and fault-tolerant applications.

Availability

STP6N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for STP6N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP6N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline switch-mode power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP6N80K5 supports 2.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9676 Rev 5. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries when mounted on standard 1-inch² FR-4 board with 2 oz copper.

Does STP6N80K5 include an integrated gate Zener diode?

Yes-STP6N80K5 incorporates a monolithically integrated gate-source Zener diode rated for ±30 V, providing inherent protection against gate oxide breakdown during ESD events or transient overvoltage. This feature is confirmed in the "Features" section and removed from Table 8 per Rev 5 datasheet updates.

Can STP6N80K5 replace STP6N80K3 in existing designs?

Yes, STP6N80K5 is a direct drop-in replacement for STP6N80K3 in most applications, offering identical pinout, package, and voltage rating, but with improved R_DS(on) (1.6 Ω vs 1.8 Ω max), lower Q_g (13 nC vs 15 nC), and enhanced avalanche ruggedness (85 mJ vs 70 mJ).

What is the recommended PCB footprint for thermal performance?

The recommended DPAK (TO-252) type E footprint per Figure 21 of DS9676 Rev 5 uses a 5.2 mm × 6.6 mm thermal pad with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner-layer copper planes. This achieves the stated 1.47 °C/W R_thJC and maintains T_J < 125 °C at 60 W dissipation.