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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6NM60N

Name: STP6NM60N
Brand: STMicroelectronics
SKU: STP6NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6NM60N.pdf

Description:: MOSFET N-CH 600V 4.6A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,160

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Product details

Overview

STP6NM60N from STMicroelectronics is an N-channel 600 V, 0.85 Ω (typ), 4.6 A MDmesh™ II Power MOSFET in TO-220 package. It delivers low gate charge (13 nC), low input capacitance (420 pF), and 100% avalanche-tested ruggedness for high-efficiency switching in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STP6NM60N datasheet, STP6NM60N pinout, STP6NM60N application, or STP6NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.85 Ω R_DS(on) at V_GS = 10 V, 13 nC total gate charge, 45 W T_C = 25 °C power dissipation, and TO-220 thermal resistance of 2.78 °C/W.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 40 V/ns dv/dt capability under 4.6 A load and 15 V/ns peak diode recovery slope support robust operation in hard-switched inductive circuits.

The integrated source-drain diode exhibits 1.3 V forward voltage at 4.6 A and 300 ns reverse recovery time (T_j = 25 °C), enabling efficient freewheeling in flyback and LLC topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems
R_DS(on) max	0.92 Ω - Ensures ≤2.0 W conduction loss at 4.6 A DC, critical for thermal management in sealed enclosures
Q_g	13 nC - Enables fast turn-on with low gate drive power, reducing driver IC stress in high-frequency (>100 kHz) designs
E_AS	65 mJ - Supports unclamped inductive switching without external snubbers in relay drivers or motor control H-bridges
R_thj-case	2.78 °C/W - Allows 45 W continuous dissipation with standard TO-220 heatsink, eliminating need for oversized thermal solutions
t_r/t_f	8/9 ns - Minimizes switching transition losses in resonant and quasi-resonant converters operating up to 500 kHz

Pinout & Package

STP6NM60N uses a standard TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to ground/reference; ties directly to PCB ground plane for EMI control
2 (Gate)	Control input for MOSFET channel activation	High-impedance node requiring <5 Ω series gate resistor to damp oscillation and limit peak current during switching
3 (Drain)	Main high-voltage power terminal	Connected to internal die backside; electrically tied to metal tab - must be insulated from chassis in most applications

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. first-gen devices, enabling higher efficiency at 100–300 kHz
100% avalanche tested	Guarantees single-pulse energy handling up to 65 mJ without parameter shift - eliminates need for design margin on surge events
Low C_iss/C_oss ratio	420 pF / 30 pF enables stable zero-voltage switching (ZVS) initiation in half-bridge LLC converters
ECOPACK® compliant	Meets RoHS and halogen-free requirements per JEDEC J-STD-020, supporting green manufacturing and export compliance

Applications

Industrial SMPS

LED Driver Power Stage

Use Scenario: Primary-side switch in 150 W open-frame AC-DC power supply for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz.

Use Value: 0.85 Ω R_DS(on) limits conduction loss to 1.8 W at full load, enabling natural convection cooling without fan.

Use Scenario: Buck converter switch driving 48 V, 3 A constant-current LED strings in outdoor signage.

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency (150 kHz) synchronous buck stage with external freewheeling diode.

Use Value: 13 nC Q_g allows use of low-cost bipolar gate driver (e.g., ULN2003), reducing BOM cost by $0.18/unit.

AC Motor Starter

PFC Boost Switch

Use Scenario: Solid-state relay replacement in 1/2 HP induction motor soft-start circuit.

IC Role / Device Role / Timing Role: Inrush current limiter and run switch in phase-angle controlled triac bypass topology.

Use Value: 18.4 A pulsed drain current rating supports 6× motor locked-rotor current for 100 ms without derating.

Use Scenario: Active boost switch in 350 W front-end PFC stage for telecom rectifier.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) switch with 100 kHz variable frequency operation.

Use Value: 40 V/ns dv/dt rating ensures reliable commutation across full line range (90–265 VAC) without false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60Z	600 V, 0.95 Ω, 12 nC, Zener-protected gate	Higher R_DS(on) but includes integrated gate protection - preferred where board-level ESD risk exceeds 8 kV contact discharge	Select when gate robustness outweighs 0.1 Ω R_DS(on) penalty; avoid in thermally constrained layouts
FQP6N60C	600 V, 1.2 Ω, 22 nC, no avalanche rating	Lacks 100% avalanche testing and has 69% higher Q_g - requires larger gate driver and heatsink	Acceptable only in cost-sensitive, non-safety-critical consumer supplies with ample thermal margin

Compared with STP6NM60N, STP6NK60Z trades 6% higher conduction loss for gate protection in harsh environments, while FQP6N60C sacrifices avalanche ruggedness and switching efficiency for lower unit cost - making STP6NM60N optimal for industrial-grade reliability at balanced performance.

Availability

STP6NM60N is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, AC motor starters, and PFC boost switches requiring stable component supply across multi-year production cycles.

Supply support for STP6NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion systems operating above 300 V DC bus.

FAQ

Is STP6NM60N pin-compatible with other TO-220 N-channel 600 V MOSFETs?

Yes - STP6NM60N follows standard TO-220 three-pin layout (Source-Gate-Drain, left-to-right with tab facing down), matching industry-standard footprint and mounting hole pattern. However, gate threshold voltage (2–4 V) and dynamic parameters differ significantly from older planar MOSFETs, so gate drive strength and timing must be re-validated.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. For reliable long-term operation, ST recommends limiting T_j to ≤130 °C using thermal design that accounts for R_thj-case = 2.78 °C/W and ambient conditions. At T_C = 100 °C, continuous drain current drops to 2.9 A per datasheet Table 2.

Does STP6NM60N require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to control dV/dt and prevent parasitic oscillation. ST recommends 4.7 Ω for 10 V gate drive in typical 65–100 kHz flyback designs. Values below 2.2 Ω increase ringing risk; above 10 Ω degrades switching speed and increases losses.

Can STP6NM60N replace STP12NM60N in existing designs?

No - STP12NM60N has double the current rating (12 A vs. 4.6 A) and higher R_DS(on) (0.65 Ω), but shares identical V_DSS and package. Direct substitution would cause thermal runaway due to mismatched SOA and insufficient current headroom; redesign of gate drive, heatsink, and layout is required.

STP6NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 920mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6NM60N FAQ

1.How can I place an order for STP6NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6NM60N reliable?

The price and inventory of STP6NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6NM60N is usually 5 days.

3.What payment methods are accepted for STP6NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6NM60N?

STP6NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6NM60N?

For technical support, including STP6NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6NM60N requirements.

6.How does Aetrix verify that STP6NM60N is sourced from the original manufacturer or authorized distributors?

All STP6NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6NM60N meets industry standards.

7.What is the process for return or replacement of STP6NM60N?

All STP6NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP6NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6NM60N part is unused and in its original packaging.

Return procedure for STP6NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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