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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP70N10F4

Name: STP70N10F4
Brand: STMicroelectronics
SKU: STP70N10F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP70N10F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP70N10F4.pdf

Description:: MOSFET N-CH 100V 65A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP70N10F4 from STMicroelectronics is an N-channel 100 V, 65 A, 0.015 Ω R_DS(on) Power MOSFET in TO-220 package, utilizing STripFET™ DeepGATE™ technology for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It features 100% avalanche tested ruggedness, exceptional dv/dt capability, and a maximum junction temperature of 175 °C.

For engineers reviewing the STP70N10F4 datasheet, STP70N10F4 pinout, STP70N10F4 application, or STP70N10F4 equivalent, this device is selected for high-current, medium-voltage switching where low conduction loss, fast switching, and robust unclamped inductive switching performance are critical - especially in industrial SMPS and BLDC gate driver stages.

Technical Context

This MOSFET employs a deep-trench STripFET™ structure with optimized DeepGATE™ gate geometry to minimize R_DS(on) while maintaining strong gate control and low gate charge (Q_g = 85 nC). Its 100 V V_DSS rating supports 48 V bus systems with margin, and its 120 mJ single-pulse avalanche energy enables reliable operation under transient overvoltage conditions without external snubbers.

The device delivers 150 W total dissipation at T_C = 25 °C with R_thj-case = 1.0 °C/W, and exhibits low output capacitance (C_oss = 300 pF) and reverse transfer capacitance (C_rss = 190 pF), supporting high-frequency hard-switching up to 200 kHz in resonant and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V nominal bus with ≥2× voltage margin for transients and ringing
R_DS(on) max	0.0195 Ω - Enables ≤1.2 W conduction loss at 60 A continuous drain current
I_D (T_C = 25 °C)	65 A - Sustains high peak load currents in motor H-bridge and UPS inverters
Q_g	85 nC - Allows efficient gate drive with standard 1–2 A peak drivers at ≤500 kHz
E_AS	120 mJ - Withstands unclamped inductive switching events without failure
t_r/t_f	20/20 ns - Enables fast turn-on/turn-off with minimal switching loss in hard-switched converters
R_thj-case	1.0 °C/W - Permits direct heatsink mounting for thermal management in compact enclosures

Pinout & Package

STP70N10F4 is housed in a through-hole TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab (Drain-connected) provides mechanical mounting and thermal path to heatsink. ECOPACK® compliant, lead-free, RoHS-compliant construction.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; requires <20 nC gate charge for full enhancement
2 (Drain)	High-side power switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
3 (Source)	Power return reference	Serves as local ground reference for gate drive; carries full load current and diode recovery current

Key Features

Feature	Design Value
STripFET™ DeepGATE™ process	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs prior-generation 100 V MOSFETs
100% avalanche rated	Guarantees operation under repetitive unclamped inductive switching without derating
Exceptional dv/dt immunity	Withstands >100 V/ns parasitic ringing during fast switching without false turn-on
Low C_rss/C_iss ratio	190/5800 pF enables stable gate drive in high-side configurations with minimal Miller effect

Applications

Industrial SMPS

BLDC Motor Inverter Stage

Use Scenario: 1–3 kW offline AC-DC power supply with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier and high-side switch in half-bridge topology.

Use Value: 0.015 Ω R_DS(on) reduces conduction loss by 35% vs 0.022 Ω alternatives at 50 A, improving full-load efficiency to >94%.

Use Scenario: 750 W–2 kW brushless DC motor drive for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, commutated at 16–20 kHz.

Use Value: 20 ns fall time and 120 mJ E_AS ensure clean commutation and fault tolerance during phase current reversal.

UPS Output Stage

Hot-Swap OR-ing Circuit

Use Scenario: Line-interactive UPS with bidirectional buck-boost converter and battery interface.

IC Role / Device Role / Timing Role: High-current, low-loss main switching element in boost/buck power stage.

Use Value: 65 A continuous rating and 1.0 °C/W R_thj-case support 1.5× overload current for 30 s without thermal shutdown.

Use Scenario: Redundant 48 V DC power distribution with automatic OR-ing and fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for bidirectional current blocking and low-loss forward conduction.

Use Value: 1.5 V V_SD forward drop at 60 A ensures <90 mW conduction loss per device, minimizing heat buildup in dense PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668	R_DS(on) = 0.018 Ω, Q_g = 105 nC, TO-247 package	Higher gate charge increases driver loss; larger package requires more board area	Preferred when higher avalanche energy (220 mJ) is required and TO-247 mounting is acceptable
IXTH75N10L2	R_DS(on) = 0.012 Ω, but V_DSS = 100 V, Q_g = 120 nC, TO-247	Lower R_DS(on) improves conduction loss, but slower switching increases E_SW above 100 kHz	Selected for ultra-low-loss 50–100 kHz applications where thermal headroom exists for higher Q_g losses

Compared with IRFP4668 and IXTH75N10L2, STP70N10F4 offers the best balance of low R_DS(on), moderate Q_g, and TO-220 thermal/mechanical compatibility - making it optimal for cost-sensitive, space-constrained 100–200 kHz industrial power stages.

Availability

STP70N10F4 is available at Aetrix Electronics and suitable for industrial SMPS, BLDC motor inverters, UPS output stages, and hot-swap OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for STP70N10F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ DeepGATE™ product line targets high-efficiency, high-reliability power conversion - specifically engineered for demanding switching applications where R_DS(on), Q_g, and avalanche robustness must co-optimize in mainstream packages like TO-220.

FAQ

What is the maximum continuous drain current for STP70N10F4 at 100 °C case temperature?

The maximum continuous drain current is 46 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15207 Rev 3). This derating reflects thermal limits imposed by the TO-220 package's 1.0 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Does STP70N10F4 require a negative gate voltage for reliable turn-off in high-noise environments?

No - STP70N10F4 has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. While a small negative gate bias (e.g., –5 V) improves noise immunity, it is not required; stable turn-off is achieved with 0 V gate drive due to low gate leakage (<100 nA) and high dv/dt immunity.

Can STP70N10F4 be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 9) ensures inherent current sharing when paralleled with identical units. Designers must match gate drive impedance, layout symmetry, and thermal coupling; typical practice uses 10–22 Ω gate resistors per device and shared source inductance <10 nH.

Is the TO-220 package of STP70N10F4 electrically insulated from the drain terminal?

No - the metal tab is internally connected to the drain (pin 2). Electrical isolation from the heatsink is mandatory unless the heatsink is at the same potential as the drain node. ST recommends using insulating shoulder washers and silicone thermal pads rated for ≥1000 V isolation when mounting to grounded heatsinks.

STP70N10F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP70N10F4 FAQ

1.How can I place an order for STP70N10F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP70N10F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP70N10F4 reliable?

The price and inventory of STP70N10F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP70N10F4 is usually 5 days.

3.What payment methods are accepted for STP70N10F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP70N10F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP70N10F4?

STP70N10F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP70N10F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP70N10F4?

For technical support, including STP70N10F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP70N10F4 requirements.

6.How does Aetrix verify that STP70N10F4 is sourced from the original manufacturer or authorized distributors?

All STP70N10F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP70N10F4 meets industry standards.

7.What is the process for return or replacement of STP70N10F4?

All STP70N10F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP70N10F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP70N10F4 part is unused and in its original packaging.

Return procedure for STP70N10F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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