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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP75N75F4

Name: STP75N75F4
Brand: STMicroelectronics
SKU: STP75N75F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP75N75F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP75N75F4.pdf

Description:: MOSFET N-CH 75V 78A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:8,683

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Product details

Overview

STP75N75F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 75 V drain-source voltage, 0.0092 Ω typical R_DS(on) at V_GS = 10 V and I_D = 39 A, and 78 A continuous drain current at T_C = 25 °C. It employs STripFET™ DeepGATE™ technology to minimize conduction loss and optimize switching performance in high-current DC-DC and motor drive stages.

For engineers reviewing the STP75N75F4 datasheet, STP75N75F4 pinout, STP75N75F4 application, or STP75N75F4 equivalent, key selection criteria include avalanche ruggedness (185 mJ E_AS), low gate charge (76 nC), thermal resistance (1 °C/W junction-to-case), and SOA-limited pulsed current capability (312 A).

Technical Context

This MOSFET uses a deep-trench STripFET™ structure with optimized gate geometry to achieve ultra-low on-resistance while maintaining robust avalanche energy rating. Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers, and its 100% avalanche-rated design supports unclamped inductive switching without external snubbers.

The device exhibits strong temperature stability: R_DS(on) increases only ~1.8× from 25 °C to 150 °C, and V_GS(th) decreases predictably (~0.5 V drop over same range), enabling reliable gate drive margining across industrial temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage in high-side switch or half-bridge leg without breakdown risk
R_DS(on) typ.	0.0092 Ω @ V_GS = 10 V, I_D = 39 A - Enables <1 W conduction loss at 33 A, critical for thermally constrained power stages
I_D cont.	78 A @ T_C = 25 °C - Supports high-current motor phases or battery-switching paths with minimal paralleling
E_AS	185 mJ - Withstands single unclamped inductive energy events up to 50 V × 35 A without failure
Q_g	76 nC - Reduces gate driver power demand and switching transition time in 100 kHz+ SMPS designs
R_thj-case	1 °C/W - Allows direct heatsink mounting for >100 W dissipation with ≤100 °C junction rise above heatsink
C_iss	5015 pF - Defines input capacitance seen by gate driver; impacts Miller plateau duration and dv/dt immunity

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin vertical lead frame. Mounting hole centered on tab for mechanical fixation and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance source connection; ties to PCB ground plane or low-impedance return trace
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing without proper RC damping
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
100% avalanche rated	Guarantees single-pulse ruggedness to 185 mJ without derating, eliminating need for external clamping in relay/motor coil drives
Low gate charge (76 nC)	Reduces gate driver power loss and enables faster turn-on/turn-off transitions in high-frequency converters
Very low R_DS(on) (0.0092 Ω typ.)	Minimizes I²R conduction losses in high-current applications such as BLDC motor phase legs or UPS output stages
Enhancement-mode operation	Ensures default-OFF behavior for fail-safe power control; no external pull-down required for safe startup

Applications

Motor Drive Phase Switch

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in industrial pump or HVAC fan, operating at 48 V bus and 50 A peak.

IC Role / Device Role / Timing Role: Low-side switching element conducting full motor phase current during PWM on-time.

Use Value: 0.0092 Ω R_DS(on) limits conduction loss to <2.3 W at 50 A, reducing heatsink size and improving efficiency over alternatives with >0.015 Ω.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated buck converter for telecom power supply.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and improve light-load efficiency.

Use Value: 1.5 V V_SD at 78 A enables lower conduction loss than 0.55 V Schottky at same current, especially under high ambient temperature.

Uninterruptible Power Supply Output Switch

Industrial Relay Replacement

Use Scenario: Bidirectional AC/DC transfer switch in line-interactive UPS, handling 75 A surge during utility failure.

IC Role / Device Role / Timing Role: High-current solid-state switch replacing electromechanical contactor for zero-crossing-free switching.

Use Value: 312 A pulsed current rating and 185 mJ avalanche energy support repeated 100 ms surges without degradation.

Use Scenario: Solid-state replacement for 30 A industrial control relay driving solenoid valves or heating elements.

IC Role / Device Role / Timing Role: Directly controlled by PLC output to switch inductive loads with fast turn-off and no contact arcing.

Use Value: Integrated body diode with 67 ns reverse recovery time suppresses voltage spikes during turn-off, eliminating need for external flyback diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0075 Ω @ 10 V but rated only 60 V V_DS; Q_g = 82 nC	Not suitable for 75 V systems; better for 48 V DC-DC where lower R_DS(on) justifies reduced voltage margin	Select when bus voltage ≤60 V and lowest possible conduction loss is primary goal
STP80NF55-08	V_DS = 55 V, R_DS(on) = 0.008 Ω, I_D = 80 A; not avalanche rated	Lacks E_AS specification; requires external protection in inductive switching	Prefer for cost-sensitive 48 V applications where avalanche stress is absent or externally managed

Compared with IRF7470PBF and STP80NF55-08, STP75N75F4 uniquely balances 75 V rating, 185 mJ avalanche ruggedness, and sub-10 mΩ on-resistance-making it optimal for 48–72 V industrial switching where reliability under transient overload is mandatory.

Availability

STP75N75F4 is available at Aetrix Electronics and suitable for motor drive phase switches, DC-DC synchronous rectifiers, and uninterruptible power supply output switches requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP75N75F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor controls, power supplies, and solid-state relays.

FAQ

Is STP75N75F4 suitable for logic-level gate drive?

No. Its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). Driving with 3.3 V or 5 V logic alone results in high on-resistance (>0.1 Ω) and excessive power dissipation. A dedicated gate driver or level-shifting circuit is required for reliable operation.

What is the maximum allowable case temperature for continuous operation?

The device supports continuous operation up to T_C = 100 °C, where rated continuous drain current drops to 55 A. Derating follows linear 1 W/°C reduction beyond 25 °C case temperature, with absolute maximum junction temperature limited to 175 °C per datasheet.

Does STP75N75F4 have a built-in body diode, and what are its recovery characteristics?

Yes, it integrates a fast-recovery body diode with t_rr = 67 ns, Q_rr = 183 nC, and I_RRM = 5.5 A under specified test conditions (I_SD = 78 A, V_DD = 60 V, di/dt = 100 A/µs, T_j = 150 °C). This enables use in synchronous rectification and freewheeling without external diodes in many cases.

Can STP75N75F4 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) promotes current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥10 Ω), and thermal coupling via shared heatsink are essential to prevent thermal runaway. Parallel operation beyond two units requires detailed SOA analysis per Figure 2.

STP75N75F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 39A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5015 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP75N75F4 FAQ

1.How can I place an order for STP75N75F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP75N75F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP75N75F4 reliable?

The price and inventory of STP75N75F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP75N75F4 is usually 5 days.

3.What payment methods are accepted for STP75N75F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP75N75F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP75N75F4?

STP75N75F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP75N75F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP75N75F4?

For technical support, including STP75N75F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP75N75F4 requirements.

6.How does Aetrix verify that STP75N75F4 is sourced from the original manufacturer or authorized distributors?

All STP75N75F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP75N75F4 meets industry standards.

7.What is the process for return or replacement of STP75N75F4?

All STP75N75F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP75N75F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP75N75F4 part is unused and in its original packaging.

Return procedure for STP75N75F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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