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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP75NF75FP

Name: STP75NF75FP
Brand: STMicroelectronics
SKU: STP75NF75FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP75NF75FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP75NF75FP.pdf

Description:: MOSFET N-CH 75V 80A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:5,425

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Product details

Overview

STP75NF75FP from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220FP package, rated for 75V V_DSS, 0.0095Ω R_DS(on) at V_GS = 10V, 80A continuous drain current (T_C = 25°C), and 2000V RMS insulation withstand voltage. It serves as a primary high-efficiency switching element in isolated DC-DC converters for telecom and computing infrastructure.

For engineers reviewing the STP75NF75FP datasheet, STP75NF75FP pinout, STP75NF75FP application, or STP75NF75FP equivalent, key selection criteria include its low gate charge (117 nC), exceptional dv/dt capability (12 V/ns), 100% avalanche-tested ruggedness, and thermal resistance (R_thJC = 3.33 °C/W) critical for high-power density designs.

Technical Context

This STripFET™ II MOSFET employs a planar vertical structure optimized to minimize input capacitance (C_iss = 3700 pF) and gate charge, enabling fast switching with reduced driver losses. Its body diode exhibits 132 ns reverse recovery time and 660 nC Q_rr under defined inductive load conditions.

The device features a fully isolated TO-220FP package with insulated tab (2000 V RMS), allowing direct mounting to heatsinks without electrical isolation hardware. Thermal performance is governed by R_thJC = 3.33 °C/W and R_thJA = 62.5 °C/W, with safe operating area validated up to 320 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche conduction; defines maximum DC bus voltage compatibility.
R_DS(on)	0.0095 Ω - On-resistance at V_GS = 10V and I_D = 40A; determines conduction loss and thermal rise at full load.
I_D (cont)	80 A @ T_C = 25°C - Continuous drain current limited by package thermal capacity; derates to 70 A at 100°C case temperature.
Q_g	117 nC - Total gate charge required to switch device; directly impacts gate driver power and switching speed.
dv/dt	12 V/ns - Peak diode recovery voltage slope rating; ensures robustness against parasitic turn-on in hard-switched topologies.
E_AS	700 mJ - Single-pulse avalanche energy at T_J = 25°C; enables reliable operation under unclamped inductive switching stress.
V_ISO	2000 V RMS - Insulation withstand voltage between all three leads and external heatsink; eliminates need for insulating pads in many applications.

Pinout & Package

STP75NF75FP uses a TO-220FP (Full-Pak) package with electrically insulated tab, enabling direct heatsink mounting without isolation hardware. The package features 3 terminals in standard linear configuration: Gate (left), Drain (center/tab), Source (right).

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal; requires ≤ ±20 V drive; low input capacitance (C_iss = 3700 pF) reduces driver burden.
2 (Center/Tab)	Drain	Main power output terminal; electrically isolated from heatsink via molded plastic body (2000 V RMS rating).
3 (Right)	Source	Power return path and reference for gate drive; connects to low-side switch node or ground plane.

Key Features

Feature	Design Value
STripFET™ II process	Reduces gate charge (Q_g = 117 nC) and input capacitance, enabling higher-frequency operation with lower driver losses.
100% avalanche tested	Guarantees single-pulse avalanche energy of 700 mJ, supporting robust unclamped inductive switching in SMPS primary side.
High dv/dt immunity	Rated for 12 V/ns, preventing false turn-on during fast voltage transients in high-side or half-bridge configurations.
Insulated TO-220FP package	2000 V RMS isolation allows direct heatsink mounting-reducing thermal interface layers and assembly cost vs. standard TO-220.

Applications

Telecom DC-DC Converters

Server VRM Primary Switch

Use Scenario: 48 V input, 12 V output isolated forward converter in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: Low R_DS(on) (0.0095 Ω) minimizes conduction loss at 80 A peak; high dv/dt rating prevents spurious turn-on during transformer reset.

Use Scenario: High-current multiphase buck converter supplying CPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: High-side power switch in interleaved phase leg, driven by dedicated gate controller.

Use Value: Fast switching (t_r = 100 ns, t_f = 30 ns) and low Q_g reduce switching loss; insulated tab simplifies thermal design across multiple parallel phases.

Industrial Motor Drive Inverter

UPS Inverter Stage

Use Scenario: 3-phase IGBT/MOSFET hybrid inverter for HVAC compressors (20–30 kW range).

IC Role / Device Role / Timing Role: Low-side switching element in bridge-leg configuration handling 60–80 A RMS current.

Use Value: Avalanche-rated ruggedness (E_AS = 700 mJ) withstands inductive kickback during fault interruption; TO-220FP isolation avoids creepage distance constraints.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: Output H-bridge switch in high-frequency PWM inverter stage (16–20 kHz).

Use Value: Low C_oss (730 pF) and Crss (240 pF) reduce switching losses and EMI generation; 100% avalanche test ensures reliability during grid-synchronization transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PbF	R_DS(on) = 0.0075 Ω @ 10V, but higher Q_g = 150 nC and no insulated package (TO-247); R_thJC = 0.45 °C/W.	Requires external insulator for heatsink mounting; better conduction loss but higher gate drive loss at high frequency.	Prefer when thermal budget allows non-insulated mounting and lowest R_DS(on) dominates over switching loss.
IXFH80N075	R_DS(on) = 0.0078 Ω @ 10V, Q_g = 135 nC, TO-247 package with insulated option (IXFH80N075L); not 100% avalanche tested.	Lacks guaranteed avalanche rating; insulated variant adds cost and footprint vs. TO-220FP.	Choose only if STP75NF75FP supply is constrained and avalanche margin is verified redundant in system-level testing.

Compared with IRFP4668PbF and IXFH80N075, STP75NF75FP uniquely balances low R_DS(on), moderate Q_g, certified avalanche ruggedness, and integrated insulation-making it optimal for space-constrained, high-reliability telecom and server power where thermal and safety margins are tightly coupled.

Availability

STP75NF75FP is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRM primary switches, and industrial UPS inverter stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP75NF75FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency isolated DC-DC conversion in telecom and computing infrastructure where low gate charge and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for STP75NF75FP at 100°C case temperature?

The maximum continuous drain current is 70 A at T_C = 100°C, as specified in Table 1 of the official datasheet. This derating reflects thermal limitations of the TO-220FP package, which has R_thJC = 3.33 °C/W. Operation above this current requires active cooling or pulse-width limitation to stay within SOA boundaries.

Does STP75NF75FP require a heatsink, and what is its thermal resistance junction-to-case?

Yes, a heatsink is required for continuous operation above ~15 A ambient. The device has R_thJC = 3.33 °C/W (max), meaning a 70 A load at 100°C case temperature generates ~233 W of dissipation, requiring a heatsink with R_thCA ≤ 0.7 °C/W for safe junction temperature below 175°C. The insulated tab eliminates need for mica washers.

Is STP75NF75FP suitable for use in automotive applications?

No-STP75NF75FP is not qualified to AEC-Q101 and is not rated for automotive-grade temperature cycling or humidity testing. ST explicitly states in the datasheet that non-automotive-grade parts "may only be used in automotive applications at user's own risk." For automotive use, ST recommends AEC-Q101-qualified alternatives like STD75NF75 or STW75NF75.

How does the insulated TO-220FP package affect PCB layout compared to standard TO-220?

The TO-220FP's insulated tab allows direct mounting to a common heatsink shared across multiple devices without inter-device isolation barriers. PCB layout benefits include simplified thermal vias under the source pad (pin 3), elimination of insulating hardware, and reduced creepage/clearance requirements-enabling denser power stage layouts in telecom and server modules.

STP75NF75FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP75NF75FP FAQ

1.How can I place an order for STP75NF75FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP75NF75FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP75NF75FP reliable?

The price and inventory of STP75NF75FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP75NF75FP is usually 5 days.

3.What payment methods are accepted for STP75NF75FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP75NF75FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP75NF75FP?

STP75NF75FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP75NF75FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP75NF75FP?

For technical support, including STP75NF75FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP75NF75FP requirements.

6.How does Aetrix verify that STP75NF75FP is sourced from the original manufacturer or authorized distributors?

All STP75NF75FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP75NF75FP meets industry standards.

7.What is the process for return or replacement of STP75NF75FP?

All STP75NF75FP units undergo pre-shipment inspection (PSI). If there is an issue with STP75NF75FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP75NF75FP part is unused and in its original packaging.

Return procedure for STP75NF75FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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