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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP78N75F4

Name: STP78N75F4
Brand: STMicroelectronics
SKU: STP78N75F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP78N75F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP78N75F4.pdf

Description:: MOSFET N-CH 75V 78A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,990

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Product details

Overview

STP78N75F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET optimized for high-current switching in industrial and power conversion systems. It delivers 78 A continuous drain current at T_C = 25 °C, 75 V drain-source breakdown voltage, and a typ. R_DS(on) of 0.0092 Ω at V_GS = 10 V - enabling low conduction loss in motor drives and DC-DC converters.

For engineers reviewing the STP78N75F4 datasheet, STP78N75F4 pinout, STP78N75F4 application, or STP78N75F4 equivalent, key selection criteria include its TO-220 package thermal resistance (R_thj-case = 1 °C/W), 76 nC total gate charge, 185 mJ single-pulse avalanche energy rating, and compatibility with standard gate drivers in hard-switched topologies.

Technical Context

This MOSFET employs ST's STripFET™ DeepGATE™ process, featuring a refined gate structure to reduce both R_DS(on) and gate charge simultaneously. Its 100% avalanche-rated design supports unclamped inductive switching without external snubbers in flyback or buck-boost stages.

The device operates over –55 °C to 175 °C junction temperature range and exhibits low C_iss (5015 pF) and C_rss (218 pF), supporting efficient high-frequency PWM operation up to 200 kHz in resonant and quasi-resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus and 60 V transient-tolerant designs.
R_DS(on) max	0.011 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 30 A, reducing heatsink requirements in high-efficiency SMPS.
I_D cont.	78 A @ T_C = 25 °C - Supports high-power output stages without paralleling, simplifying PCB layout and thermal management.
Q_g	76 nC - Low gate drive power demand; compatible with standard 1 A peak gate drivers at 100 kHz switching frequency.
E_AS	185 mJ - Rated avalanche energy allows reliable operation under inductive load turn-off stress without derating.
R_thj-case	1 °C/W - Enables direct mounting to heatsinks for >100 W continuous dissipation with minimal thermal interface resistance.

Pinout & Package

STP78N75F4 is housed in a through-hole TO-220 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from chassis ground unless circuit topology requires common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying terminal, high-side connection point	Electrically tied to internal drain region; serves as primary heat path and high-voltage node - requires insulated mounting hardware.
Pin 1 (Source)	Reference node for gate drive and current return path	Low-impedance source connection; used for Kelvin sensing in precision current monitoring or gate driver feedback loops.
Pin 2 (Gate)	Control input for channel conduction	High-impedance MOS control terminal; requires ≤±20 V drive voltage and benefits from RC snubbing to suppress ringing during fast switching.

Key Features

Feature	Design Value
N-channel enhancement mode	Self-turn-off behavior ensures safe default-off state in power-up sequences and fault conditions.
100% avalanche rated	Guaranteed operation under unclamped inductive switching without degradation - eliminates need for external clamping diodes in many topologies.
Low gate charge (76 nC)	Reduces driver power loss and enables higher switching frequencies while maintaining gate drive simplicity.
Very low R_DS(on) (0.0092 Ω typ.)	Minimizes I²R losses in high-current paths, improving system efficiency and easing thermal design in space-constrained enclosures.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current half-bridge leg in 3 kW brushless DC motor drive operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: Main power switch controlling phase current flow; synchronized with complementary MOSFET via dead-time controlled gate driver.

Use Value: 78 A current rating and 185 mJ avalanche capability allow direct replacement of dual-MOSFET configurations, reducing component count and layout complexity.

Use Scenario: Primary-side switch in 1.2 kW isolated forward converter with 48 V input and 12 V/100 A output.

IC Role / Device Role / Timing Role: High-side switching element conducting full input current during on-time; driven by transformer-isolated gate driver.

Use Value: 0.0092 Ω R_DS(on) limits conduction loss to <2.2 W at full load, enabling natural convection cooling without forced airflow.

UPS Inverter Output Stage

High-Power LED Driver Switch

Use Scenario: Full-bridge output stage in online UPS delivering 230 VAC sine-wave output from 380 VDC bus.

IC Role / Device Role / Timing Role: Low-side switching device in H-bridge; commutated at 50 Hz with high dv/dt during zero-crossing transitions.

Use Value: Robust 75 V V_DSS margin over 380 VDC bus ensures reliability during line surges and regeneration events.

Use Scenario: Constant-current switch in 200 W architectural LED driver with dimming via PWM at 1–10 kHz.

IC Role / Device Role / Timing Role: Series-pass element modulating current through high-brightness LED strings; switched synchronously with controller.

Use Value: Low Q_g (76 nC) and fast switching times (t_on typ. 25 ns) minimize PWM distortion and maintain color consistency across dimming range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PBF	R_DS(on) = 0.0075 Ω @ 10 V, but Q_g = 120 nC; TO-247 package; higher cost.	Better conduction loss but higher drive loss; suited for lower-frequency, ultra-high-efficiency designs where gate drive overhead is acceptable.	Prefer when minimizing I²R loss dominates over switching loss and board space permits larger TO-247 footprint.
STP80NF55-08	V_DSS = 55 V, R_DS(on) = 0.008 Ω, Q_g = 110 nC; same TO-220 package.	Limited to ≤48 V systems; higher gate charge increases driver stress at >100 kHz.	Select only for 24–48 V applications requiring marginal cost reduction and where 75 V rating is unnecessary.

Compared with IRFP4668PBF and STP80NF55-08, STP78N75F4 offers optimal balance of voltage rating, conduction loss, and gate drive efficiency in 48–60 V industrial power stages - especially where TO-220 mechanical compatibility and avalanche ruggedness are mandatory.

Availability

STP78N75F4 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STP78N75F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP78N75F4 belongs to ST's STripFET™ DeepGATE™ Power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial motor control, uninterruptible power supplies, and telecom power systems.

FAQ

What is the maximum safe operating temperature for STP78N75F4?

The STP78N75F4 has a specified junction temperature range of –55 °C to +175 °C. Its absolute maximum rating is 175 °C, but sustained operation above 150 °C requires derating of power dissipation per the 0.83 W/°C derating factor. Thermal design must ensure case temperature remains ≤100 °C under full-load conditions to maintain long-term reliability and avoid SOA violations.

Can STP78N75F4 be used in parallel configurations?

Yes - STP78N75F4 features positive temperature coefficient for R_DS(on), enabling stable current sharing when paralleled. However, matched gate drive impedance, symmetrical PCB layout, and individual source resistors (0.01–0.02 Ω) are required to ensure balanced dynamic current distribution and prevent oscillation or thermal runaway during switching transients.

Does STP78N75F4 include an integrated body diode?

Yes - it incorporates a monolithic source-drain body diode with typical forward voltage of 1.5 V at 78 A and reverse recovery charge (Q_rr) of 183 nC. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification; external Schottky diodes are recommended for >50 kHz recovery-critical applications.

Is STP78N75F4 RoHS-compliant and halogen-free?

Yes - STP78N75F4 is manufactured in ST's ECOPACK®-compliant TO-220 package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The device carries the "ECOPACK2" designation, confirming compliance with ST's environmental policy and suitability for green electronics manufacturing.

STP78N75F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 39A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5015 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP78N75F4 FAQ

1.How can I place an order for STP78N75F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP78N75F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP78N75F4 reliable?

The price and inventory of STP78N75F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP78N75F4 is usually 5 days.

3.What payment methods are accepted for STP78N75F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP78N75F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP78N75F4?

STP78N75F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP78N75F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP78N75F4?

For technical support, including STP78N75F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP78N75F4 requirements.

6.How does Aetrix verify that STP78N75F4 is sourced from the original manufacturer or authorized distributors?

All STP78N75F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP78N75F4 meets industry standards.

7.What is the process for return or replacement of STP78N75F4?

All STP78N75F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP78N75F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP78N75F4 part is unused and in its original packaging.

Return procedure for STP78N75F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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