Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STP7NB60

Part No.:
STP7NB60
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP7NB60.pdf
Description:
MOSFET N-CH 600V 7.2A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,247

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STP7NB60 from STMicroelectronics is an N-channel 600 V, 7.2 A PowerMESH™ MOSFET in TO-220 package with typical RDS(on) of 1.0 Ω, 100% avalanche tested, and optimized for high-speed switching in SMPS and motor drive inverters.

For engineers reviewing the STP7NB60 datasheet, STP7NB60 pinout, STP7NB60 application, or STP7NB60 equivalent, key selection criteria include its 600 V VDSS, 7.2 A continuous drain current at TC = 25 °C, 1.0 Ω RDS(on), 4.5 V/ns dv/dt capability, and 580 mJ single-pulse avalanche energy - all critical for rugged offline power conversion designs.

Technical Context

This MOSFET employs ST's proprietary high-voltage MESH OVERLAY™ process and strip-layout cell design to achieve low on-resistance per die area while maintaining robust edge termination. Its gate charge (Qg = 30–45 nC) and minimized intrinsic capacitances (Ciss = 1250–1625 pF, Coss = 165–223 pF) enable fast, efficient switching under hard-switching conditions.

The device integrates a source-drain diode with 7.2 A continuous rating, 530 ns reverse recovery time (trr), and 4.5 µC Qrr at 150 °C - supporting synchronous rectification and unclamped inductive load handling without external freewheeling diodes in many topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports primary-side switching in universal-input AC-DC converters up to 400 V DC bus with margin
RDS(on)1.0 Ω typ. - enables <1.0 W conduction loss at 3.2 A RMS in 50 W–150 W SMPS designs
ID (cont.)7.2 A at TC = 25 °C - suitable for medium-power flyback/LLC primary switches with heatsink
Qg30–45 nC - determines gate driver strength requirement; compatible with standard 1-A peak drivers
EAS580 mJ - withstands repetitive unclamped inductive switching events in motor drive H-bridge legs
dv/dt4.5 V/ns - suppresses false turn-on during high-slew-rate transients in noisy industrial environments
Tj(max)150 °C - allows operation in sealed enclosures with limited airflow when derated per Rthj-case = 1.0 °C/W

Pinout & Package

TO-220 package: insulated case, vertical mounting, 3-pin through-hole configuration with metal tab (drain) electrically connected to Pin 2. Standard lead finish: matte tin.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Drain)Drain terminal / CaseHigh-voltage output node; electrically tied to metal tab; requires isolation washer when mounted to heatsink
Pin 3 (Gate)Control inputHigh-impedance MOS gate; requires 10 V drive for full enhancement; sensitive to ESD and ringing

Key Features

FeatureDesign Value
PowerMESH™ cell architectureDelivers lowest RDS(on)/mm² among 600 V MOSFETs of same die size, reducing conduction loss density
100% avalanche testedGuarantees robustness against inductive kickback without derating - eliminates need for snubbers in many welder inverters
Minimized Ciss, Coss, CrssReduces switching losses and EMI generation; enables >100 kHz operation in PFC stages
Extremely high dv/dt capability4.5 V/ns rating prevents spurious turn-on during fast voltage transitions in half-bridge configurations
Integrated source-drain diodeEnables body-diode commutation in LLC resonant converters without discrete diode cost or layout area

Applications

Switch Mode Power Supplies (SMPS)DC-AC Inverters for Welding Equipment

Use Scenario: Primary-side switch in 100–200 W offline flyback or forward converter with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller; handles 600 V blocking and 7.2 A peak current.

Use Value: Low RDS(on) reduces conduction loss; avalanche rating eliminates need for clamping circuits during overload.

Use Scenario: Half-bridge leg switch in IGBT-gated arc-welding inverter operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power stage element; sustains repeated unclamped inductive switching stress.

Use Value: 580 mJ EAS and 4.5 V/ns dv/dt tolerance ensure reliable operation during short-circuit and arc-strike events.

Uninterruptible Power Supplies (UPS)Motor Drive Inverters (Fan/Pump)

Use Scenario: DC-AC H-bridge in line-interactive UPS with battery backup and 120/230 V AC output.

IC Role / Device Role / Timing Role: Output stage MOSFET; blocks 600 V DC bus and switches bidirectionally via gate control.

Use Value: Integrated source-drain diode supports regenerative braking paths; low Qg enables precise dead-time control.

Use Scenario: Low-cost 3-phase inverter for 0.5–2 kW BLDC or induction motor drives in HVAC fans.

IC Role / Device Role / Timing Role: Phase-leg switch; operates in 6–20 kHz PWM range with thermal cycling.

Use Value: Rthj-case = 1.0 °C/W allows direct heatsink mounting; 150 °C Tj(max) supports ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP8NK60Z600 V, 8 A, RDS(on) = 0.75 Ω typ., Zener-protected gate, higher Qg (52 nC)Better conduction efficiency but slower switching; requires stronger gate driverSelect when lower conduction loss dominates over switching loss, e.g., in <50 kHz fixed-frequency SMPS
FQP7N60C600 V, 7 A, RDS(on) = 1.2 Ω typ., no avalanche rating, TO-220 packageLacks guaranteed avalanche ruggedness; unsuitable for unclamped inductive loadsAcceptable only in non-inductive or snubber-protected applications where cost is primary constraint

Compared with STP8NK60Z and FQP7N60C, STP7NB60 offers balanced trade-offs: superior avalanche reliability versus FQP7N60C and lower gate charge versus STP8NK60Z - making it optimal for cost-sensitive, medium-frequency industrial SMPS requiring field-proven ruggedness.

Availability

STP7NB60 is available at Aetrix Electronics and suitable for switch mode power supplies, welding inverters, uninterruptible power supplies, and motor drive inverters requiring stable component supply and long-term industrial availability.

Supply support for STP7NB60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™ MOSFET product line targets high-reliability, medium-power industrial switching applications - emphasizing avalanche ruggedness, thermal stability, and consistent parametric performance across temperature and lifetime.

FAQ

What is the maximum safe operating junction temperature for STP7NB60?

The absolute maximum junction temperature is 150 °C, as specified in Table 3. Operation above this limit risks permanent degradation of the silicon structure and oxide integrity. Thermal design must ensure that steady-state Tj remains below 150 °C under worst-case ambient, power dissipation, and heatsink conditions - using Rthj-case = 1.0 °C/W and derating factor of 1.0 W/°C.

Does STP7NB60 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 10–20 kHz SMPS use, a 10–22 Ω series resistor between driver and gate is recommended. This limits peak gate current to ~0.5 A (given 10 V drive and 45 nC Qg) and damps ringing caused by Lg-Ciss resonance, especially critical due to the device's high dv/dt capability.

Can STP7NB60 be used in parallel configurations?

Parallel operation is not recommended without individual source resistors and matched PCB layout. The device exhibits positive temperature coefficient for RDS(on) (per Figure 14), which aids current sharing, but gate threshold variation (3–5 V) and unequal parasitic inductance can cause dynamic imbalance. If paralleling is unavoidable, use identical gate drive paths, Kelvin-source connections, and 0.1–0.2 Ω source resistors per device.

Is the TO-220 package electrically insulated, and how should it be mounted?

The TO-220 package has an electrically conductive metal tab tied directly to the drain (Pin 2). It is not insulated - mounting to a heatsink requires an isolating pad (e.g., mica or polymer film) plus shoulder washer to prevent shorting. Thermal interface material must be applied between pad and heatsink. Mechanical torque on the mounting screw must not exceed 0.6 N·m to avoid package cracking.

STP7NB60 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1625 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP7NB60 FAQ

1.How can I place an order for STP7NB60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP7NB60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP7NB60 reliable?

The price and inventory of STP7NB60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP7NB60 is usually 5 days.

3.What payment methods are accepted for STP7NB60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP7NB60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP7NB60?

STP7NB60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP7NB60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP7NB60?

For technical support, including STP7NB60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP7NB60 requirements.

6.How does Aetrix verify that STP7NB60 is sourced from the original manufacturer or authorized distributors?

All STP7NB60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP7NB60 meets industry standards.

7.What is the process for return or replacement of STP7NB60?

All STP7NB60 units undergo pre-shipment inspection (PSI). If there is an issue with STP7NB60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP7NB60 part is unused and in its original packaging.

Return procedure for STP7NB60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STP7NB60 Tags

  • STP7NB60
  • STP7NB60 PDF
  • STP7NB60 Datasheet
  • STP7NB60 Specifications
  • STP7NB60 Images
  • STMicroelectronics
  • STMicroelectronics STP7NB60
  • Buy STP7NB60
  • STP7NB60 Price
  • STP7NB60 Distributor
  • STP7NB60 Supplier
  • STP7NB60 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER