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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP7NM50N

Name: STP7NM50N
Brand: STMicroelectronics
SKU: STP7NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP7NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP7NM50N.pdf

Description:: MOSFET N-CH 500V 5A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,600

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Product details

Overview

STP7NM50N from STMicroelectronics is an N-channel 500 V, 5 A, 0.70 Ω (typ) high-voltage Power MOSFET based on second-generation MDmesh™ technology, designed for high-efficiency switching converters in offline SMPS, PFC stages, and industrial power supplies. It features 100% avalanche tested ruggedness, low gate charge (12 nC), and low input capacitance (400 pF).

For engineers reviewing the STP7NM50N datasheet, STP7NM50N pinout, STP7NM50N application, or STP7NM50N equivalent, this device is selected for high-voltage flyback, resonant LLC, and hard-switched DC-DC topologies where low R_DS(on), fast switching, and robust unclamped inductive switching capability are critical.

Technical Context

This MOSFET employs ST's proprietary strip-based vertical MDmesh™ structure to minimize conduction and switching losses simultaneously. Its 500 V V_DSS rating with 550 V breakdown margin supports universal AC input designs up to 265 VAC, while its 2.78 °C/W junction-to-case thermal resistance enables reliable operation at 45 W dissipation in TO-220 packages without forced cooling.

The device integrates a fast-recovery body diode (t_rr = 250 ns @ T_j = 25°C) with low Q_rr (2 µC), enabling efficient operation in quasi-resonant and ZVS circuits. Gate threshold voltage (2–4 V) and low gate input resistance (6 Ω) ensure stable drive compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands 550 V breakdown; suitable for 265 VAC offline inputs with safety margin.
R_DS(on) (max)	0.78 Ω @ V_GS = 10 V, I_D = 2.5 A - Enables <1.95 W conduction loss at 5 A continuous current.
Q_g	12 nC - Reduces gate drive power and enables >100 kHz switching in high-efficiency converters.
t_r/t_f	5 ns / 9 ns @ V_DD = 250 V, R_G = 4.7 Ω - Supports fast, low-loss transitions with minimal EMI generation.
E_AS	100 mJ - Withstands single-pulse unclamped inductive energy without failure; eliminates need for external snubbers in many cases.
dv/dt immunity	40 V/ns - High immunity to parasitic turn-on during high-speed switching in noisy power stages.
T_j max	150 °C - Allows operation in sealed industrial enclosures with ambient temperatures up to 85 °C.

Pinout & Package

STP7NM50N is housed in a through-hole TO-220 package with standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and serves as primary heat path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Low-impedance input (6 Ω) requiring ≤10 V drive; sensitive to ESD; must be actively pulled low when off.
2 (Drain)	Main high-side current path	Internally bonded to metal tab; requires insulated mounting hardware when heatsink is grounded.
3 (Source)	Reference node for gate drive & current return	Common connection point for sense resistor, driver ground, and low-side return; defines local ground reference.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Combines strip layout with optimized vertical drift region to achieve world-class R_DS(on) × Q_g figure of merit (0.70 Ω × 12 nC).
100% avalanche rated	Guaranteed single-pulse avalanche energy of 100 mJ ensures reliability in unclamped inductive switching without derating.
Low C_iss/C_oss	400 pF input capacitance and 67 pF equivalent output capacitance reduce switching losses and improve ZVS initiation.
Fast body diode	250 ns reverse recovery time and 2 µC Q_rr minimize commutation losses in bridge and resonant topologies.
ECOPACK® compliance	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards; compatible with standard SnPb and lead-free reflow profiles.

Applications

AC-DC Adapter

Industrial Motor Drive

Use Scenario: 65 W universal-input flyback converter for laptop adapters.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: Low R_DS(on) and Q_g enable >88% efficiency at full load; avalanche rating eliminates need for clamping circuitry.

Use Scenario: Half-bridge inverter stage for 0.75 kW BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switching element in 20 kHz PWM-driven inverter leg.

Use Value: Fast t_r/t_f and low dv/dt sensitivity reduce gate drive complexity and EMI filtering cost.

LED Streetlight Driver

Telecom Rectifier Module

Use Scenario: Two-switch forward converter powering 150 W LED arrays in outdoor lighting.

IC Role / Device Role / Timing Role: Main switching transistor handling 400 V bus voltage and 350 kHz switching.

Use Value: 150 °C T_j max and 2.78 °C/W R_th(j-c) allow compact heatsink design in thermally constrained pole-mounted enclosures.

Use Scenario: Active clamp forward primary switch in 48 V telecom rectifier with 3 kW output.

IC Role / Device Role / Timing Role: High-reliability main switch operating continuously under high ambient temperature.

Use Value: 100% avalanche testing and 500 V rating provide margin against line surges and transient overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NM50	Higher R_DS(on) (0.85 Ω max), same V_DSS and package; 15 nC Q_g.	Suitable for lower-frequency (<65 kHz), higher-current designs where conduction loss dominates.	Select when cost sensitivity outweighs switching loss optimization; verify thermal margin at 5 A continuous.
FQP5N50C	Same V_DSS (500 V), but higher R_DS(on) (1.4 Ω), slower t_r/t_f, no avalanche rating.	Limited to non-critical consumer-grade SMPS where surge immunity is not required.	Use only in cost-driven, non-industrial applications; avoid in PFC or high-reliability systems.

Compared with STP8NM50 and FQP5N50C, STP7NM50N delivers superior R_DS(on) × Q_g performance and guaranteed avalanche ruggedness-critical for industrial and telecom power supplies operating under wide-line and overload conditions.

Availability

STP7NM50N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, LED streetlight drivers, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for STP7NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure.

FAQ

Is STP7NM50N suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (67 pF) and fast body diode (t_rr = 250 ns) enable reliable ZVS operation in LLC resonant converters up to 300 kHz. The 100 mJ E_AS rating ensures robustness during startup and fault conditions where ZVS may not be achieved.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 3 A at T_C = 100°C, as specified in Table 1. This reflects thermal derating due to reduced heat dissipation capability; operation above this requires active cooling or pulse-width limitation to maintain T_j ≤ 150°C.

Does STP7NM50N require a gate resistor for safe operation?

Yes. A gate resistor (typically 4.7–10 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during turn-on/turn-off. The datasheet specifies switching times using R_G = 4.7 Ω; omitting it risks oscillation, shoot-through, or gate oxide damage.

Can STP7NM50N replace STP7NK50Z in existing designs?

No. STP7NK50Z uses SuperMESH™ technology with different gate charge profile (Q_g = 27 nC vs. 12 nC) and higher R_DS(on) (0.85 Ω). Direct replacement would increase switching losses and may cause gate driver overload; layout and drive circuit validation is mandatory.

STP7NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 780mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP7NM50N FAQ

1.How can I place an order for STP7NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP7NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP7NM50N reliable?

The price and inventory of STP7NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP7NM50N is usually 5 days.

3.What payment methods are accepted for STP7NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP7NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP7NM50N?

STP7NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP7NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP7NM50N?

For technical support, including STP7NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP7NM50N requirements.

6.How does Aetrix verify that STP7NM50N is sourced from the original manufacturer or authorized distributors?

All STP7NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP7NM50N meets industry standards.

7.What is the process for return or replacement of STP7NM50N?

All STP7NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP7NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP7NM50N part is unused and in its original packaging.

Return procedure for STP7NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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