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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP7NM60N

Name: STP7NM60N
Brand: STMicroelectronics
SKU: STP7NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP7NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP7NM60N.pdf

Description:: MOSFET N-CH 600V 5A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP7NM60N from STMicroelectronics is an N-channel 600 V, 5 A Power MOSFET in IPAK (TO-251) package, featuring 800 mΩ typ. R_DS(on), 14 nC total gate charge, and 100% avalanche tested. It employs MDmesh™ II vertical strip technology for high-efficiency switching in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STP7NM60N datasheet, STP7NM60N pinout, STP7NM60N application, or STP7NM60N equivalent, key selection criteria include its 2.78 °C/W junction-to-case thermal resistance, 15 V/ns dv/dt ruggedness, low C_iss (363 pF), and integrated body diode with 213 ns t_rr at 25 °C.

Technical Context

This device uses ST's second-generation MDmesh™ architecture-combining a vertical drift region with optimized strip layout-to achieve ultra-low R_DS(on) × Q_g figure of merit (≈11.2 Ω·nC). Its gate threshold voltage (2–4 V) enables robust TTL/CMOS-level drive compatibility without requiring dedicated level-shifting circuitry.

The integrated source-drain diode supports synchronous rectification and flyback recovery, with specified I_SD = 5 A continuous and 20 A pulsed, alongside controlled reverse recovery (Q_rr = 1.5 µC, I_RRM = 14 A). The 15 V/ns dv/dt rating ensures reliable operation under fast-switching, high-voltage transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in universal-input 85–265 VAC offline converters without derating.
R_DS(on) max	900 mΩ @ V_GS = 10 V, I_D = 2.5 A - Enables <1.1 W conduction loss at 5 A, critical for thermally constrained designs.
Q_g	14 nC - Reduces gate drive power and allows use of low-current drivers (e.g., 100 mA peak) in high-frequency (>100 kHz) topologies.
t_r/t_f	10 ns / 12 ns - Minimizes switching transition losses and EMI generation in hard-switched resonant and quasi-resonant converters.
R_thJC	2.78 °C/W - Enables 45 W dissipation at T_C = 25 °C; supports direct heatsink mounting via exposed tab for compact thermal design.
E_AS	119 mJ - Guarantees unclamped inductive switching survivability in relay driving, motor control, and transformer-coupled topologies.
C_iss	363 pF - Low input capacitance improves gate drive efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

IPAK (TO-251) package with exposed drain tab for thermal and electrical connection. Molded plastic body, single inline pin configuration, RoHS-compliant ECOPACK® grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance MOSFET control terminal; requires ≤±25 V bias; 5.4 Ω intrinsic gate resistance limits ringing.
2 (D) / TAB	Drain / Exposed Pad	Main high-voltage current path and primary thermal interface; electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Reference node for gate drive and load return; ties to ground or low-side switch node; carries full load current (5 A continuous).

Key Features

Feature	Design Value
100% avalanche tested	Validated single-pulse energy handling up to 119 mJ, enabling robust operation in inductive switching without external snubbers.
Low gate charge (Q_g = 14 nC)	Reduces driver power consumption by >40% vs. legacy 600 V MOSFETs, supporting efficient 3.3 V/5 V microcontroller direct drive.
Low input capacitance (C_iss = 363 pF)	Minimizes Miller plateau duration and gate drive loop sensitivity, improving noise immunity in high-dV/dt environments.
MDmesh™ II vertical structure	Delivers industry-leading R_DS(on) × Q_g product (11.2 Ω·nC), directly reducing combined conduction + switching losses in 65–300 kHz SMPS.
Integrated fast-recovery body diode	t_rr = 213 ns (25 °C), Q_rr = 1.5 µC - Enables usable synchronous rectification in flyback and LLC secondary-side applications.

Applications

Industrial AC-DC Power Supplies

LED Driver Primary Switch

Use Scenario: 100–300 W open-frame power supply for PLCs and HMIs operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in discontinuous conduction mode (DCM) flyback converter.

Use Value: 900 mΩ R_DS(on) and 2.78 °C/W R_thJC enable >89% efficiency at full load without forced air cooling.

Use Scenario: Constant-current LED driver for street lighting with universal AC input and 40–60 V output.

IC Role / Device Role / Timing Role: Main switching element in active PFC + flyback two-stage topology.

Use Value: 15 V/ns dv/dt rating prevents false triggering during line transients; 100% avalanche test ensures reliability over 50,000-hour lifetime.

Switch-Mode Motor Control

DC-DC Boost Converter

Use Scenario: 24–48 V DC-fed brushless DC motor controller for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter stage driving 3-phase BLDC windings.

Use Value: Low Q_gd/Q_gs ratio (7.7/2.7 nC) minimizes cross-conduction risk during dead-time transitions.

Use Scenario: 12 V to 48 V boost converter for telecom remote radio units (RRUs) and PoE++ injectors.

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency (200 kHz) boost regulator with synchronous rectification.

Use Value: Integrated body diode with 1.3 V V_SD and 213 ns t_rr reduces need for external Schottky, lowering BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF7NM60N	Same die, TO-220FP (full-pack) package; R_thJC = 2.5 °C/W; no exposed drain tab on leadframe.	Better thermal performance but larger footprint; requires insulated mounting hardware for drain isolation.	Select when higher power dissipation (>50 W) is required and board space permits TO-220FP form factor.
IPP60R099C6	Infineon CoolMOS™ C6; 99 mΩ R_DS(on); 22 nC Q_g; 650 V rating; DPAK package.	Lower R_DS(on) but higher Q_g and lower dv/dt rating (10 V/ns); not 100% avalanche tested.	Select only if system prioritizes conduction loss over switching loss and operates below 100 kHz with soft-switching.

Compared with STF7NM60N and IPP60R099C6, STP7NM60N offers optimal balance of ruggedness (100% avalanche), thermal interface (exposed IPAK tab), and gate drive simplicity (low Q_g, TTL-compatible V_GS(th)) for cost-sensitive, medium-power industrial SMPS.

Availability

STP7NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP7NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP7NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems where ruggedness, low gate charge, and thermal performance are critical.

FAQ

Is STP7NM60N pin-compatible with STU7NM60N?

Yes - STP7NM60N and STU7NM60N share identical IPAK (TO-251) pinout (G-D-S), same electrical specifications, and identical MDmesh™ II die. The difference lies solely in packaging: STP7NM60N is supplied in tube packaging, while STU7NM60N uses tape-and-reel. Both are functionally interchangeable in PCB layout.

What is the maximum safe operating area (SOA) limitation at T_C = 100 °C?

At T_C = 100 °C, the continuous drain current is derated to 3 A per absolute maximum ratings table. The SOA curve (Figure 1) shows that at 300 V V_DS, the device supports ≤2.5 A for 10 ms pulses, limited by R_DS(on) heating. Pulse testing must respect I_DM = 20 A and E_AS = 119 mJ boundaries.

Can STP7NM60N be used in zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (24.6 pF) and C_oss,eq (130 pF) enable efficient resonant tank operation. Measured t_r/t_f (10/12 ns) and 15 V/ns dv/dt rating support reliable ZVS turn-on in LLC and phase-shifted full-bridge converters operating up to 500 kHz.

Does the body diode require external anti-parallel diode supplementation?

No - the integrated body diode is rated for 5 A continuous and 20 A pulsed with t_rr = 213 ns (25 °C) and Q_rr = 1.5 µC. It is suitable for freewheeling in flyback and buck-derived topologies. External diodes are only needed for ultra-low V_F (<0.8 V) or sub-100 ns t_rr requirements.

STP7NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 363 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP7NM60N FAQ

1.How can I place an order for STP7NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP7NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP7NM60N reliable?

The price and inventory of STP7NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP7NM60N is usually 5 days.

3.What payment methods are accepted for STP7NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP7NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP7NM60N?

STP7NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP7NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP7NM60N?

For technical support, including STP7NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP7NM60N requirements.

6.How does Aetrix verify that STP7NM60N is sourced from the original manufacturer or authorized distributors?

All STP7NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP7NM60N meets industry standards.

7.What is the process for return or replacement of STP7NM60N?

All STP7NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP7NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP7NM60N part is unused and in its original packaging.

Return procedure for STP7NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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