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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80N70F6

Name: STP80N70F6
Brand: STMicroelectronics
SKU: STP80N70F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP80N70F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP80N70F6.pdf

Description:: MOSFET N-CH 68V 96A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:8,585

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Product details

Overview

STP80N70F6 from STMicroelectronics is an N-channel 700 V, 80 A, 0.055 Ω typ. SuperMESH™3 power MOSFET in TO-220FP package, designed for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives. It features low gate charge (Qg = 140 nC), fast switching, and avalanche-rated ruggedness.

For engineers reviewing the STP80N70F6 datasheet, STP80N70F6 pinout, STP80N70F6 application, or STP80N70F6 equivalent, key selection criteria include R_DS(on) at 10 V V_GS, single-pulse avalanche energy (E_AS = 950 mJ), thermal resistance (R_thJC = 1.2 °C/W), and gate threshold voltage (V_GS(th) = 3.0–5.0 V).

Technical Context

This MOSFET employs ST's SuperMESH™3 process to achieve optimized conduction and switching trade-offs. Its planar stripe cell structure enables stable operation under repetitive avalanche conditions and supports hard-switched topologies up to 100 kHz.

The device integrates a fast-recovery body diode with reverse recovery time t_rr = 220 ns and peak reverse recovery current I_RRM = 60 A, reducing snubber losses in flyback and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	700 V - supports offline AC-DC inputs up to 400 V RMS with margin
I_D (T_C = 25°C)	80 A - enables high-current output stages without parallel devices
R_DS(on) max	0.068 Ω @ V_GS = 10 V - limits conduction loss to ≤ 43 W at 80 A
Q_g	140 nC - determines gate driver power requirement and switching speed
E_AS	950 mJ - ensures robustness against inductive load transients without external clamping
t_rr	220 ns - reduces diode-related switching loss and EMI in discontinuous mode

Pinout & Package

Supplied in TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, enabling direct heatsink mounting without insulator washers. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level drive; requires ≥ 1 W peak gate driver capability for 100 kHz switching
Drain (D)	High-side power node	Exposed metal tab connected internally to drain; electrically isolated from heatsink by package molding
Source (S)	Reference return path	Common connection point for gate driver ground and load return; defines local power ground reference

Key Features

Feature	Design Value
SuperMESH™3 technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, improving efficiency in 65–100 kHz SMPS
100% avalanche tested	Guarantees single-pulse E_AS ≥ 950 mJ - eliminates need for external RCD clamp in PFC boost stages
Fast body diode	t_rr = 220 ns with soft recovery - lowers EMI and prevents cross-conduction in half-bridge synchronous rectification
TO-220FP isolation	Drain tab withstands 2.5 kV AC insulation test - allows direct heatsink mounting without mica or silicone pads

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3 kW variable-frequency drive for HVAC compressors operating from 3-phase 400 V AC input.

IC Role / Device Role / Timing Role: High-side main switch in three-phase inverter leg, switching at 8 kHz with 120° commutation.

Use Value: Low R_DS(on) minimizes conduction loss at 45 A RMS; avalanche rating handles regenerative energy during rapid deceleration.

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for cloud server power supply.

IC Role / Device Role / Timing Role: Hard-switched ZVS-capable MOSFET operating at 300 kHz with 50% duty cycle.

Use Value: Fast body diode enables clean zero-voltage switching transition; low Q_g reduces gate drive loss at high frequency.

Telecom Rectifier Modules

PFC Boost Converter

Use Scenario: 3 kW telecom rectifier module converting -48 V DC backup to 380 V DC bus for 48 V distribution.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology, operating at 100 kHz with adaptive dead-time control.

Use Value: TO-220FP insulation simplifies thermal design in compact chassis; 700 V rating accommodates 400 V DC bus with safety margin.

Use Scenario: Active PFC stage in 2 kW industrial LED driver accepting universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65 kHz with average current mode control.

Use Value: Low R_DS(on) maintains >96% efficiency at full load; avalanche rating absorbs line surge events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-05	R_DS(on) = 4.5 mΩ @ 10 V but V_DSS = 60 V only - unsuitable for 400 V AC systems	Limited to low-voltage DC-DC conversion; cannot replace STP80N70F6 in offline applications	Select only for <100 V DC input designs requiring ultra-low R_DS(on)
STW80N70F6	Same die in TO-247 package - higher thermal dissipation (R_thJC = 0.5 °C/W) but no isolation	Requires insulated mounting hardware; preferred for >150 W continuous conduction	Choose when board space permits TO-247 and thermal budget exceeds 100 W

Compared with IPP80N06S2L-05 and STW80N70F6, the STP80N70F6 uniquely balances 700 V rating, TO-220FP isolation, and 80 A current handling-making it optimal for space-constrained, safety-certified industrial AC-DC converters where heatsink isolation and creepage distance are critical.

Availability

STP80N70F6 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and PFC boost converters requiring stable component supply across multi-year production cycles.

Supply support for STP80N70F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The STP80N70F6 belongs to ST's SuperMESH™3 power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum recommended junction temperature for continuous operation?

The STP80N70F6 has a maximum junction temperature (T_j) rating of 150°C per its official datasheet. Derating is required above 25°C ambient; at T_C = 100°C, the maximum continuous drain current drops to 42 A. Thermal design must ensure R_thJA remains ≤ 2.5 °C/W with adequate PCB copper area and airflow.

Does this MOSFET require a negative gate turn-off voltage?

No. The STP80N70F6 operates with standard 0 V to +10 V or +12 V gate drive. Its V_GS(th) range (3.0–5.0 V) and positive-only threshold ensure reliable turn-on with conventional gate drivers. Negative bias is unnecessary and not specified in the datasheet.

Can STP80N70F6 be used in synchronous rectification configurations?

No - it is an N-channel high-side switch intended for primary-side switching, not low-side synchronous rectification. Its body diode recovery characteristics are optimized for hard-switching, not bidirectional conduction. For synchronous rectification, ST recommends dedicated SR controllers paired with logic-level MOSFETs like STL110N10F7.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes. STMicroelectronics certifies the STP80N70F6 as RoHS-compliant and lead-free per EU Directive 2011/65/EU. The TO-220FP package uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level MSL3, with a peak reflow temperature of 260°C.

STP80N70F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 68 V

Current - Continuous Drain (Id) @ 25°C:: 96A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 48A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP80N70F6 FAQ

1.How can I place an order for STP80N70F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80N70F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80N70F6 reliable?

The price and inventory of STP80N70F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80N70F6 is usually 5 days.

3.What payment methods are accepted for STP80N70F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80N70F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80N70F6?

STP80N70F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80N70F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80N70F6?

For technical support, including STP80N70F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80N70F6 requirements.

6.How does Aetrix verify that STP80N70F6 is sourced from the original manufacturer or authorized distributors?

All STP80N70F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80N70F6 meets industry standards.

7.What is the process for return or replacement of STP80N70F6?

All STP80N70F6 units undergo pre-shipment inspection (PSI). If there is an issue with STP80N70F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80N70F6 part is unused and in its original packaging.

Return procedure for STP80N70F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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