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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80N900K6

Name: STP80N900K6
Brand: STMicroelectronics
SKU: STP80N900K6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP80N900K6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP80N900K6.pdf

Description:: Linear IC's

Quantity:: RFQ Add To RFQ list

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Inventory:5,000

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Product details

Overview

STP80N900K6 from STMicroelectronics is an N-channel 800 V, 750 mΩ typ. (900 mΩ max.) superjunction Power MOSFET in TO-220 package, designed for high-voltage flyback converters and LED lighting drivers. It delivers 6 A continuous drain current at 25 °C, features ultra-low 7 nC total gate charge, and is 100% avalanche tested to 65 mJ single-pulse energy.

For engineers reviewing the STP80N900K6 datasheet, STP80N900K6 pinout, STP80N900K6 application, or STP80N900K6 equivalent, key selection criteria include R_DS(on) × area efficiency, dv/dt ruggedness (120 V/ns), Zener-protected gate, and MDmesh K6 technology's optimized switching loss trade-off in compact adapters and high-density power supplies.

Technical Context

This MOSFET employs ST's MDmesh K6 superjunction architecture, achieving best-in-class figure of merit (R_DS(on) × Q_g) for 800 V devices. Its 362 pF input capacitance and 46 pF time-related output capacitance enable fast switching with low E_on/E_off at 3 A and 640 V.

The integrated body diode exhibits 229 ns reverse recovery time at 150 °C and 13.7 A peak I_RRM, supporting robust operation in discontinuous conduction mode (DCM) flyback topologies. Thermal resistance junction-to-case is 1.83 °C/W, enabling 68 W dissipation at 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains-referenced primary-side voltage in universal-input offline SMPS
R_DS(on) max	900 mΩ at V_GS = 10 V, I_D = 2 A - Enables low conduction loss in 6 A flyback designs with minimal heatsink
Q_g	7 nC - Reduces gate drive power and enables use of smaller, lower-cost gate drivers
E_AS	65 mJ - Guarantees unclamped inductive switching survival in adapter overloads without external snubbers
dv/dt ruggedness	120 V/ns - Prevents spurious turn-on during high-slew transient events in high-frequency flyback operation
T_J range	−55 to 150 °C - Supports reliable operation in sealed LED driver enclosures and high-ambient notebook adapters

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard 3-pin through-hole mounting; tab serves as thermal and electrical connection point for drain.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically and thermally connected to metal tab; requires insulated mounting in most applications
G (Pin 1)	Gate	High-impedance control terminal; Zener-protected against ±30 V transients
S (Pin 3)	Source	Reference node for gate drive; carries full load current and diode recovery current

Key Features

Feature	Design Value
MDmesh K6 superjunction process	Delivers industry-leading R_DS(on) × area ratio, reducing die size by ~30% vs prior K5 generation at same voltage rating
Zener-protected gate	Integrated 30 V clamp eliminates need for external gate protection in cost-sensitive adapter designs
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 65 mJ, ensuring field reliability under surge and startup stress
Ultra-low C_oss (6.2 pF)	Minimizes capacitive switching loss and improves light-load efficiency in quasi-resonant flyback controllers

Applications

LED Lighting Driver

Flyback AC/DC Adapter

Use Scenario: Constant-current isolated driver for commercial LED troffers operating from 90–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in DCM flyback topology, synchronized to controller IC via auxiliary winding feedback.

Use Value: Low R_DS(on) and 120 V/ns dv/dt ruggedness prevent false triggering during line surges, extending lifetime beyond 50,000 hours.

Use Scenario: 45 W universal-input adapter for tablets and all-in-one PCs requiring compact form factor and no-fan operation.

IC Role / Device Role / Timing Role: Main power switch in QR flyback converter, operating at 65–130 kHz with valley-switching control.

Use Value: 7 nC Q_g reduces gate drive loss by 40% vs legacy 800 V MOSFETs, enabling higher efficiency (>89% at full load) without active cooling.

Notebook Power Supply

Industrial AC/DC Module

Use Scenario: 65 W external power supply meeting CoC Tier 2 and DoE Level VI efficiency standards.

IC Role / Device Role / Timing Role: High-voltage switching element in active-clamp forward or flyback-derived topology with synchronous rectification.

Use Value: 65 mJ E_AS rating ensures robustness during brown-out recovery and output short-circuit events without derating.

Use Scenario: DIN-rail mounted 24 V/5 A industrial power module for factory automation sensors and PLC I/O.

IC Role / Device Role / Timing Role: Primary-side switch in ruggedized flyback with reinforced isolation and extended temperature operation.

Use Value: −55 to 150 °C T_J range and 1.83 °C/W R_thJC support operation in unventilated enclosures up to 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75N75F7	750 V rating, 750 mΩ max., 7.5 A ID, lower Q_g (5.5 nC), but reduced voltage margin	Better suited for 230 VAC-only systems; insufficient margin for 800 V transients in universal-input designs	Select only when input voltage is clamped ≤ 600 V peak and space-constrained layout favors smaller die size
IPP60R950C7	600 V rating, 950 mΩ typ., 6 A ID, CoolMOS C7 process, higher C_iss (520 pF)	Higher switching loss at 640 V bus; requires larger gate driver due to 17 nC Q_g	Preferable only if system operates strictly below 400 V DC bus and prioritizes cost over efficiency at 800 V stress points

Compared with STP75N75F7 and IPP60R950C7, STP80N900K6 uniquely balances 800 V blocking capability, sub-1 Ω on-resistance, and <10 nC gate charge-enabling compact, high-efficiency flyback designs where voltage margin, thermal density, and avalanche robustness are jointly critical.

Availability

STP80N900K6 is available at Aetrix Electronics and suitable for LED lighting drivers, notebook adapters, and industrial AC/DC modules requiring stable component supply across multi-year production cycles and global sourcing.

Supply support for STP80N900K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

The MDmesh K6 product line targets high-efficiency, high-power-density offline power conversion, specifically optimizing R_DS(on) × Q_g and avalanche ruggedness for next-generation adapters, LED drivers, and industrial SMPS.

FAQ

Is STP80N900K6 suitable for zero-voltage switching (ZVS) flyback topologies?

Yes. Its low 6.2 pF C_oss and 9 pF Co(er) enable efficient resonant reset in ZVS flyback designs. Measured E_oss is 1.2 µJ at 400 V, minimizing dead-time losses while maintaining clean turn-on waveforms under 100 kHz operation.

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated for 3 A switching with E_on/E_off ≤ 25 µJ each at 640 V. Values above 22 Ω increase switching time disproportionately due to 3.6 Ω intrinsic gate resistance, risking thermal overstress during hard switching.

Does the Zener protection cover both positive and negative gate transients?

Yes. The integrated bidirectional Zener clamps gate-source voltage to ±30 V, verified per IEC 61000-4-2 (8 kV contact discharge) testing. This eliminates need for external TVS diodes in Class II adapter designs complying with EN 61347-2-13.

Can STP80N900K6 replace STP80NF55 in existing 550 V designs?

No direct drop-in replacement. While pin-compatible, STP80N900K6 has higher V_GS(th) (3.0–4.0 V vs 2.0–4.0 V), slower trr (229 ns vs 150 ns), and different SOA limits. Layout and gate drive must be re-validated for 800 V operation and thermal profile.

STP80N900K6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 362 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP80N900K6 FAQ

1.How can I place an order for STP80N900K6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80N900K6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80N900K6 reliable?

The price and inventory of STP80N900K6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80N900K6 is usually 5 days.

3.What payment methods are accepted for STP80N900K6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80N900K6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80N900K6?

STP80N900K6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80N900K6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80N900K6?

For technical support, including STP80N900K6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80N900K6 requirements.

6.How does Aetrix verify that STP80N900K6 is sourced from the original manufacturer or authorized distributors?

All STP80N900K6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80N900K6 meets industry standards.

7.What is the process for return or replacement of STP80N900K6?

All STP80N900K6 units undergo pre-shipment inspection (PSI). If there is an issue with STP80N900K6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80N900K6 part is unused and in its original packaging.

Return procedure for STP80N900K6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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