Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8N65M5

Name: STP8N65M5
Brand: STMicroelectronics
SKU: STP8N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP8N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP8N65M5.pdf

Description:: MOSFET N-CH 650V 7A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,656

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP8N65M5 from STMicroelectronics is an N-channel 650 V, 560 mΩ typ., 7 A MDmesh M5 Power MOSFET in TO-220FP package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, low gate charge (15 nC), and fast switching with 200 ns reverse recovery time.

For engineers reviewing the STP8N65M5 datasheet, STP8N65M5 pinout, STP8N65M5 application, or STP8N65M5 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring low conduction loss, robust dv/dt immunity (15 V/ns), and integrated body diode performance in continuous conduction mode.

Technical Context

The STP8N65M5 employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) (560 mΩ typ. at V_GS = 10 V, I_D = 3.5 A) while maintaining 650 V breakdown voltage and excellent safe operating area (SOA) up to 10 ms at T_C = 25 °C.

Its dynamic characteristics include C_iss = 690 pF, Q_g = 15 nC, and Q_gd = 6 nC - enabling efficient operation in 65–100 kHz flyback and LLC resonant converters. The integrated source-drain diode delivers 7 A continuous current with 1.5 V forward voltage and 1.6 µC reverse recovery charge.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC mains input with 30% margin for surge and ringing in offline power supplies.
R_DS(on) max	600 mΩ - enables <1.5 W conduction loss at 7 A DC, critical for thermal management in compact TO-220FP designs.
I_D (cont.)	7 A at T_C = 25 °C - defines maximum steady-state current before thermal derating begins.
P_TOT	25 W - total power dissipation limit at T_C = 25 °C, corresponding to R_thJC = 5 °C/W in TO-220FP package.
Q_g	15 nC - determines gate drive power requirement and switching speed; enables <50 ns turn-off delay with 4.7 Ω gate resistor.
t_rr	200 ns - reverse recovery time at I_SD = 7 A, di/dt = 100 A/µs, V_DD = 100 V - impacts EMI and cross-conduction loss in bridge configurations.
E_AS	120 mJ - single-pulse avalanche energy rating - confirms ruggedness under unclamped inductive switching stress.

Pinout & Package

STP8N65M5 is housed in a TO-220FP (Full-Pak) package with insulated tab, offering creepage/clearance compliance for high-voltage isolation. The plastic body isolates the drain-connected tab from heatsink mounting surface, eliminating need for insulating pads in Class I safety designs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤±25 V gate-source voltage; 2–8 Ω gate resistance recommended for optimal EMI/loss tradeoff.
2 (D / TAB)	Drain (exposed tab)	Main high-side power path; electrically connected to internal die drain; insulated tab allows direct heatsink mounting without isolation hardware.
3 (S)	Source	Power return node and reference for gate drive; connects to low-side switch or ground in common-source configuration.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Delivers 560 mΩ R_DS(on) at 650 V - 25% lower on-resistance than prior-generation 650 V MOSFETs in same package.
100% avalanche tested	Guarantees minimum 2 A repetitive avalanche current and 120 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching.
Low Q_gd/Q_g ratio (0.4)	Reduces Miller-induced shoot-through risk and improves controllability during hard switching transitions.
dv/dt immunity	Rated 15 V/ns - withstands rapid voltage transients in high-frequency PFC and resonant converters without false turn-on.
Integrated body diode	Optimized for soft recovery (Q_rr = 1.6 µC, t_rr = 200 ns) - reduces switching losses in synchronous rectification and freewheeling paths.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 1 kW server power supply operating in continuous conduction mode (CCM) flyback with 400 V DC bus.

IC Role / Device Role / Timing Role: Main high-side switching transistor in primary-side power conversion stage.

Use Value: 600 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, enabling >92% efficiency without forced air cooling.

Use Scenario: 3-phase inverter stage in 0.75 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules handling 7 A RMS output current.

Use Value: 200 ns t_rr and 1.5 V V_SD minimize freewheeling losses and reduce heat sink size by 30% vs. standard silicon diodes.

LED Streetlight Driver

EV Onboard Charger PFC Stage

Use Scenario: 150 W isolated buck-boost LED driver for outdoor lighting with universal AC input (90–305 V AC).

IC Role / Device Role / Timing Role: Primary switch in active clamp forward topology operating at 65 kHz.

Use Value: 15 nC Q_g enables low gate drive loss and stable zero-voltage switching (ZVS) across full input range.

Use Scenario: Boost switch in 3.3 kW single-phase onboard charger with interleaved PFC stage.

IC Role / Device Role / Timing Role: High-voltage boost transistor handling 7 A peak current at 100 kHz switching frequency.

Use Value: 120 mJ E_AS rating ensures reliable operation during line surges and transient overloads without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF8N65M5	Same die, TO-220FP package, identical electrical specs - only difference is marking and tape/reel vs. tube packaging.	No functional difference; STF8N65M5 is tube-packaged variant for prototyping or low-volume assembly.	Select STF8N65M5 for manual soldering or small-batch builds; STP8N65M5 is preferred for automated SMT-compatible through-hole production.
STU8N65M5	Same MDmesh M5 die but in DPAK (TO-252) package - R_thJC = 5 °C/W vs. 5 °C/W (same), but R_thJA = 50 °C/W vs. 62.5 °C/W - better PCB thermal performance.	Better suited for space-constrained, PCB-mounted heatsinking; less suitable for bolt-down heatsinks.	Choose STU8N65M5 when board-level thermal management dominates; STP8N65M5 when mechanical heatsink attachment and isolation are required.

Compared with STF8N65M5, STP8N65M5 offers identical electrical behavior but optimized for tape-and-reel automated insertion; versus STU8N65M5, it trades PCB thermal efficiency for mechanical robustness and insulation-rated mounting - making it the preferred choice for safety-critical, high-reliability industrial power systems.

Availability

STP8N65M5 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, LED streetlight drivers, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STP8N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP8N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion - emphasizing low R_DS(on), rugged avalanche capability, and fast, controllable switching.

FAQ

What is the maximum junction temperature and thermal resistance of STP8N65M5?

The STP8N65M5 has a maximum operating junction temperature of 150 °C. Its thermal resistance from junction-to-case (R_thJC) is 5 °C/W in the TO-220FP package, measured with the tab mounted to a heatsink. This value enables precise thermal design when calculating heatsink requirements for 25 W power dissipation at T_C = 25 °C.

Does STP8N65M5 have an integrated body diode, and what are its key parameters?

Yes, STP8N65M5 includes an integrated source-drain body diode rated for 7 A continuous current. Key parameters include forward voltage V_SD = 1.5 V at I_SD = 7 A, reverse recovery time t_rr = 200 ns, reverse recovery charge Q_rr = 1.6 µC, and peak reverse recovery current I_RRM = 16 A - all specified at T_J = 25 °C and di/dt = 100 A/µs.

Can STP8N65M5 replace older 650 V MOSFETs like STP8NK60Z in existing designs?

STP8N65M5 can replace STP8NK60Z in most cases due to identical TO-220FP package, higher V_DS rating (650 V vs. 600 V), lower R_DS(on) (600 mΩ vs. 750 mΩ), and improved Q_g (15 nC vs. 28 nC). However, gate threshold voltage is higher (3–5 V vs. 2–4 V), requiring verification of gate drive compatibility in legacy circuits.

Is STP8N65M5 suitable for use in hard-switched PFC circuits?

Yes - STP8N65M5 is explicitly qualified for boost PFC stages, supported by its 15 V/ns dv/dt immunity, 100% avalanche testing, and optimized body diode recovery (t_rr = 200 ns, Q_rr = 1.6 µC). Its 650 V rating provides sufficient margin for 380 V DC bus applications with line surges, and low Q_gd ensures stable operation under high di/dt conditions.

STP8N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP8N65M5 FAQ

1.How can I place an order for STP8N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8N65M5 reliable?

The price and inventory of STP8N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8N65M5 is usually 5 days.

3.What payment methods are accepted for STP8N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8N65M5?

STP8N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8N65M5?

For technical support, including STP8N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8N65M5 requirements.

6.How does Aetrix verify that STP8N65M5 is sourced from the original manufacturer or authorized distributors?

All STP8N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8N65M5 meets industry standards.

7.What is the process for return or replacement of STP8N65M5?

All STP8N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP8N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8N65M5 part is unused and in its original packaging.

Return procedure for STP8N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …