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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8NM50FP

Name: STP8NM50FP
Brand: STMicroelectronics
SKU: STP8NM50FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP8NM50FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP8NM50FP.pdf

Description:: MOSFET N-CH 550V 8A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,617

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Product details

Overview

STP8NM50FP from STMicroelectronics is an N-channel 550 V, 8 A, 0.7 Ω (typ.) MDmesh™ Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, lighting ballasts, and industrial AC-DC converters. It features 100% avalanche tested ruggedness, 15 V/ns dv/dt capability, and low gate charge (13 nC) for efficient hard-switching operation.

For engineers reviewing the STP8NM50FP datasheet, STP8NM50FP pinout, STP8NM50FP application, or STP8NM50FP equivalent, key selection criteria include its 500 V minimum breakdown voltage, 25 W thermal-limited power dissipation in TO-220FP, 200 mJ single-pulse avalanche energy, and compatibility with standard gate drivers due to ±30 V gate rating and 3 Ω gate input resistance.

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining multiple drain process with PowerMESH™ horizontal layout-to achieve ultra-low R_DS(on) while maintaining high voltage blocking. Its dynamic performance is optimized via proprietary strip layout, yielding low C_iss (415 pF), C_oss (88 pF), and C_rss (12 pF) at V_DS = 25 V.

The device operates with gate threshold voltage of 3–5 V, supports continuous drain current up to 8 A at T_C = 25°C, and delivers robust unclamped inductive switching performance with 2.5 A repetitive avalanche current and 270 ns reverse recovery time at 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	550 V - Sustains full mains-derived DC bus voltages in 380 VAC systems without derating
R_DS(on)	0.7 Ω (typ.) - Enables <1.4 W conduction loss at 8 A, critical for thermally constrained TO-220FP layouts
I_D (cont)	8 A @ T_C = 25°C - Supports medium-power SMPS output stages up to ~1 kW with heatsink
E_AS	200 mJ - Absorbs energy during inductive turn-off transients without failure in flyback/LLC designs
Q_g	13 nC - Reduces gate driver power demand and switching losses in 50–100 kHz applications
dv/dt	15 V/ns - Resists false triggering in noisy high-dV/dt environments like motor drives
R_thj-case	5 °C/W - Limits junction rise to ≤125°C under 25 W dissipation with minimal heatsink

Pinout & Package

STP8NM50FP uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heat sink mounting surface rated for 2500 V_RMS isolation between leads and heatsink. The package enables direct PCB mounting without insulating washers while maintaining creepage/clearance compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground
2 (Gate)	Control terminal	High-impedance MOS input requiring <13 nC charge for full enhancement; sensitive to ESD
3 (Source)	Reference node for gate drive	Common return for load current and gate loop; low-inductance layout essential for fast switching

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive energy spikes without external snubbers in flyback/forward topologies
Low gate input resistance (3 Ω)	Minimizes gate oscillation risk and simplifies RC damping network design
MDmesh™ technology	Delivers 30% lower R_DS(on) × Q_g figure-of-merit vs. conventional planar MOSFETs at 500 V
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards
TO-220FP insulation	2500 V_RMS isolation allows safe mounting on live-chassis heatsinks in Class I appliances

Applications

LED Streetlight Driver

Industrial AC-DC PSU

Use Scenario: High-efficiency constant-current LED driver operating from 230 VAC mains with PFC front-end and LLC resonant stage.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in LLC half-bridge, handling 400 V DC bus and 5–10 A peak currents.

Use Value: Low 0.7 Ω R_DS(on) reduces conduction loss by >25% vs. legacy 1 Ω devices, enabling passive cooling in outdoor-rated enclosures.

Use Scenario: 500 W industrial power supply with universal input (85–265 VAC), active PFC, and dual forward converter.

IC Role / Device Role / Timing Role: Switching element in PFC boost stage, operating at 65 kHz with 8 A average current.

Use Value: 200 mJ E_AS withstands line surges and startup overloads without desaturation protection circuitry.

Electronic Ballast

UPS Inverter Stage

Use Scenario: High-frequency fluorescent lamp ballast driving 40–60 W lamps with dimming and end-of-life detection.

IC Role / Device Role / Timing Role: Half-bridge switch in resonant inverter, switching at 25–50 kHz with zero-voltage transition.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions across lamp impedance changes.

Use Scenario: Online double-conversion UPS with 1 kVA output, battery backup, and sine-wave inverter.

IC Role / Device Role / Timing Role: Output H-bridge switch handling 230 VAC RMS, 4.5 A RMS load current with PWM modulation.

Use Value: TO-220FP's 2500 V_RMS isolation eliminates need for separate insulating pads, reducing BOM count and assembly cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V V_DSS, 0.55 Ω R_DS(on), Zener-protected gate, same TO-220FP package	Higher surge immunity and lower on-resistance but reduced avalanche energy (150 mJ vs. 200 mJ)	Preferred where gate ESD robustness and lower conduction loss outweigh need for maximum unclamped inductive ruggedness
FQP8N50C	500 V V_DSS, 0.8 Ω R_DS(on), TO-220 (non-isolated), no avalanche rating	Lacks insulation and guaranteed avalanche capability; lower cost but requires external isolation and snubbing	Suitable only for non-isolated, low-risk consumer-grade supplies where safety certification does not mandate reinforced isolation

Compared with STP8NM50FP, STP8NK50ZFP offers better gate protection and efficiency but trades off avalanche margin, while FQP8N50C sacrifices isolation and ruggedness for cost-making STP8NM50FP optimal for certified industrial and lighting systems demanding both safety and reliability.

Availability

STP8NM50FP is available at Aetrix Electronics and suitable for offline switch-mode power supplies, LED lighting drivers, and industrial AC-DC converters requiring stable component supply, long-term lifecycle support, and certified isolation compliance.

Supply support for STP8NM50FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

The MDmesh™ Power MOSFET product line targets high-efficiency, high-reliability power conversion systems-specifically engineered for 400–650 V applications where low R_DS(on), fast switching, and rugged avalanche behavior are critical.

FAQ

What is the maximum continuous drain current for STP8NM50FP at 100°C case temperature?

The maximum continuous drain current is 5 A at T_C = 100°C, as specified in Table 1 of the datasheet. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, requiring appropriate heatsinking to sustain full 8 A operation.

Does STP8NM50FP require a gate resistor, and what value is recommended?

A gate resistor is required to control switching speed and suppress ringing. For typical 4.7 Ω gate resistance (per Figure 15 test circuit), the device achieves 16 ns turn-on delay and 8 ns rise time. Lower values increase dv/dt stress; higher values reduce EMI but raise switching losses-designers should optimize based on layout parasitics and EMI requirements.

Can STP8NM50FP replace STP8NM50 in existing designs?

Yes, STP8NM50FP is a direct drop-in replacement for STP8NM50 in terms of electrical specs and pinout, but it uses the insulated TO-220FP package instead of TO-220. Mechanical redesign is needed to accommodate the different footprint and thermal interface, and the isolation rating enables simplified heatsink mounting without insulators.

What is the significance of the "FP" suffix in STP8NM50FP?

The "FP" suffix denotes the Full-Pak (TO-220FP) package: a variant of TO-220 with an insulated plastic body providing 2500 V_RMS isolation between all three leads and the heatsink mounting surface. This eliminates the need for insulating pads or sil-pads in safety-critical applications, streamlining thermal design and certification.

STP8NM50FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 415 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP8NM50FP FAQ

1.How can I place an order for STP8NM50FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NM50FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NM50FP reliable?

The price and inventory of STP8NM50FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NM50FP is usually 5 days.

3.What payment methods are accepted for STP8NM50FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NM50FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NM50FP?

STP8NM50FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NM50FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NM50FP?

For technical support, including STP8NM50FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NM50FP requirements.

6.How does Aetrix verify that STP8NM50FP is sourced from the original manufacturer or authorized distributors?

All STP8NM50FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NM50FP meets industry standards.

7.What is the process for return or replacement of STP8NM50FP?

All STP8NM50FP units undergo pre-shipment inspection (PSI). If there is an issue with STP8NM50FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NM50FP part is unused and in its original packaging.

Return procedure for STP8NM50FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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