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STMicroelectronics STP8NM60

Part No.:
STP8NM60
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP8NM60.pdf
Description:
MOSFET N-CH 650V 8A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,285

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Product details

Overview

STP8NM60 from STMicroelectronics is an N-channel 600 V, 0.9 Ω typ. (1.0 Ω max.), 5 A MDmesh™ Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, low gate charge (13 nC), and high dv/dt immunity (15 V/ns).

For engineers reviewing the STP8NM60 datasheet, STP8NM60 pinout, STP8NM60 application, or STP8NM60 equivalent, this device is selected for high-efficiency, high-reliability 600 V hard-switched topologies where low conduction loss, fast switching, and robust unclamped inductive switching performance are critical.

Technical Context

This MOSFET uses ST's MDmesh™ technology-combining multi-drain process with PowerMESH™ horizontal layout-to achieve ultra-low RDS(on) and superior dynamic performance. Its 1.3 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking.

The integrated body diode exhibits 300 ns reverse recovery time (TJ = 25 °C) and 1.95 µC Qrr, supporting efficient synchronous rectification and ZVS-capable designs. Gate threshold voltage is tightly specified at 3–5 V, ensuring stable turn-on across temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Supports full mains input (85–265 VAC) with ≥2× safety margin in flyback/LLC primary switches.
RDS(on) max 1.0 Ω @ VGS = 10 V, ID = 2.5 A - Enables <1.25 W conduction loss at 5 A DC, reducing thermal stress in compact layouts.
Qg 13 nC - Low gate drive energy reduces driver IC loading and EMI during 100+ kHz switching in PFC boost stages.
ID cont @ TC = 100 °C 3.1 A - Sustains continuous current in thermally constrained industrial enclosures without derating to zero.
EAS 200 mJ - Withstands single-pulse inductive energy in relay/snubberless solenoid drivers without failure.
dv/dt rating 15 V/ns - Immune to false triggering in noisy high-dv/dt environments like motor inverter half-bridges.
Ciss 400 pF - Predictable Miller plateau behavior simplifies gate driver loop stability analysis in high-side configurations.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heat dissipation via exposed drain tab (Pin 2/TAB); thermally optimized for PCB copper area mounting.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate High-impedance control terminal; requires ≤10 V drive for full enhancement; sensitive to ESD (±30 V rating).
2 (TAB/D) Drain (exposed pad) Main power output node; electrically connected to heatsink; carries full load current and dissipates >90% of total power.
3 (S) Source Reference node for gate drive; forms return path for load current; used for current sensing in low-side configurations.

Key Features

Feature Design Value
100% avalanche tested Guarantees single-pulse ruggedness up to 2.5 A IAS and 200 mJ EAS - eliminates need for external snubbers in cost-sensitive AC-DC adapters.
Low Ciss/Coss/Crss 400 pF / 100 pF / 10 pF - minimizes switching losses and improves efficiency in 65–130 kHz SMPS designs.
MDmesh™ architecture Reduces RDS(on) × area by 40% vs. planar MOSFETs - enables smaller DPAK footprint without sacrificing 600 V rating.
Low gate input resistance Enables direct drive from microcontroller GPIO (with series resistor) - simplifies gate driver BOM in low-power IoT power supplies.

Applications

Industrial Motor Drives Server PSU Primary Switch

Use Scenario: Half-bridge high-side switch in 750 W BLDC inverter for HVAC blowers.

IC Role / Device Role / Timing Role: High-voltage power switch controlling phase current commutation at 20 kHz PWM frequency.

Use Value: 15 V/ns dv/dt immunity prevents shoot-through during fast bus transients; 1.3 °C/W RthJC allows direct heatsink mounting without thermal interface pads.

Use Scenario: Primary-side switch in active-clamp forward converter for 1U server power supply.

IC Role / Device Role / Timing Role: Main energy transfer switch operating at 125 kHz with 50% duty cycle and 400 V DC bus.

Use Value: 13 nC Qg reduces gate driver power loss to <150 mW; 600 V rating accommodates 400 V bus + 50% transient margin.

LED Streetlight Driver Industrial PLC Output Module

Use Scenario: Isolated flyback primary switch in 150 W outdoor LED driver with wide ambient range (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-voltage switching element regulating constant-current output via primary-side sensing.

Use Value: RDS(on) drift <15% over −40 to +150 °C ensures stable efficiency across temperature; 100% avalanche test covers lightning surge events.

Use Scenario: Solid-state replacement for electromechanical relay in 24 V DC digital output module driving solenoids.

IC Role / Device Role / Timing Role: Load switch enabling fast on/off control with programmable current limiting and short-circuit protection.

Use Value: Integrated body diode with 300 ns trr clamps inductive kickback without external freewheeling diode; 20 A pulsed IDM handles 5× inrush currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP8NM60FP Same die, FP (Full-Pak) package: TO-220FP with insulated tab; higher RthJC (1.5 °C/W) but easier heatsink mounting. Better suited for through-hole prototyping and lower-volume industrial controls where manual assembly dominates. Select when mechanical robustness and field-serviceable heatsink access outweigh surface-mount density requirements.
FQP8N60C 600 V, 1.2 Ω max., 8 A, TO-220; higher RDS(on), no avalanche rating, 25 nC Qg. Cost-optimized for non-critical consumer adapters where reliability margins are relaxed and switching frequency <65 kHz. Choose only if BOM cost reduction is prioritized over efficiency, thermal headroom, and surge survivability.

Compared with STP8NM60, STP8NM60FP trades PCB space for mechanical serviceability and thermal interface flexibility, while FQP8N60C sacrifices ruggedness and switching speed for entry-level pricing-making STP8NM60 the optimal balance for industrial-grade 600 V switching.

Availability

STP8NM60 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, LED streetlight drivers, and PLC output modules requiring stable component supply across extended product lifecycles.

Supply support for STP8NM60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for automotive, industrial, and consumer markets.

STP8NM60 belongs to the MDmesh™ II family-engineered specifically for high-efficiency, high-reliability 500–800 V switching in offline power conversion, emphasizing low RDS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STP8NM60 supports 3.1 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS1949 Rev 18. This value accounts for thermal derating due to junction-to-case resistance (1.3 °C/W) and ensures safe operation without exceeding TJ = 150 °C under typical PCB heatsinking conditions.

Does STP8NM60 include an integrated body diode, and what are its key recovery parameters?

Yes, STP8NM60 integrates a fast-recovery body diode rated for 5 A continuous source-drain current. At TJ = 25 °C, it delivers 300 ns reverse recovery time (trr) and 1.95 µC reverse recovery charge (Qrr), enabling efficient operation in quasi-resonant and synchronous rectifier topologies without external diodes.

Is STP8NM60 suitable for use in hard-switched PFC boost converters?

Yes-its 13 nC total gate charge, 400 pF input capacitance, and 15 V/ns dv/dt rating make it well-suited for 65–130 kHz hard-switched boost PFC stages. The 600 V VDS rating provides sufficient margin above 400 V DC bus, and 100% avalanche testing ensures robustness against line surges and inductor saturation events.

What is the recommended PCB footprint and thermal pad layout for the DPAK package?

The DPAK (TO-252) footprint must include a minimum 1-inch² copper pour connected to Pin 2 (drain/tab) with ≥2 oz copper thickness. Per Figure 19 in DS1949 Rev 18, the thermal pad should match the 5.20–5.40 mm (D1) × 4.60–4.80 mm (E1) outline, with solder mask defined to maximize thermal conduction and minimize voiding during reflow.

STP8NM60 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP8NM60 FAQ

1.How can I place an order for STP8NM60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NM60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NM60 reliable?

The price and inventory of STP8NM60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NM60 is usually 5 days.

3.What payment methods are accepted for STP8NM60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NM60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NM60?

STP8NM60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NM60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NM60?

For technical support, including STP8NM60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NM60 requirements.

6.How does Aetrix verify that STP8NM60 is sourced from the original manufacturer or authorized distributors?

All STP8NM60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NM60 meets industry standards.

7.What is the process for return or replacement of STP8NM60?

All STP8NM60 units undergo pre-shipment inspection (PSI). If there is an issue with STP8NM60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NM60 part is unused and in its original packaging.

Return procedure for STP8NM60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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