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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8NS25

Name: STP8NS25
Brand: STMicroelectronics
SKU: STP8NS25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP8NS25

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP8NS25.pdf

Description:: MOSFET N-CH 250V 8A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,894

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Product details

Overview

STP8NS25 from STMicroelectronics is an N-channel 250 V, 8 A, 0.38 Ω R_DS(on) power MOSFET in TO-220 package, designed for high-speed switching in SMPS and DC-DC converters. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and operates up to 150 °C junction temperature - enabling use in industrial lighting ballasts and telecom power supplies.

For engineers reviewing the STP8NS25 datasheet, STP8NS25 pinout, STP8NS25 application, or STP8NS25 equivalent, key selection criteria include its 250 V V_DSS, 0.38 Ω R_DS(on) at V_GS = 10 V, 37 nC total gate charge, 1.56 °C/W R_thj-case, and TO-220 thermal performance for conduction-limited high-current designs.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ high-voltage process with STrip layout and edge termination, delivering enhanced avalanche robustness and high dv/dt immunity. Its 250 V breakdown voltage and 8 A continuous drain current (at T_C = 25 °C) support operation in hard-switched topologies where voltage transients and inductive kickback are present.

The device integrates a fast-recovery body diode (t_rr = 198 ns, Q_rr = 1.1 µC at T_j = 150 °C), enabling efficient synchronous rectification and snubberless flyback operation. Gate threshold voltage (2–4 V) and low input capacitance (C_iss = 770 pF) support direct drive from standard PWM controllers without gate drivers in moderate-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - supports 200 V DC bus designs with 25 % margin against transients
R_DS(on)	0.38 Ω (typ) at V_GS = 10 V - enables ≤3.04 W conduction loss at 8 A continuous
I_D (cont)	8 A at T_C = 25 °C - requires heatsink for sustained >5 A operation above 100 °C case temp
Q_g	37 nC (typ) - determines gate drive power and switching speed in 100–500 kHz SMPS
R_thj-case	1.56 °C/W - defines minimum heatsink requirement for 80 W P_TOT dissipation
t_rr	198 ns - limits reverse recovery losses in discontinuous conduction mode converters
dv/dt	5 V/ns - ensures reliable operation during fast voltage transitions without spurious turn-on

Pinout & Package

STP8NS25 uses the standard TO-220 package with three leads: Drain (pin 2), Source (pin 1), and Gate (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and reference node for gate drive	Low-impedance connection to ground plane; carries full load current and must be routed with minimal inductance
Pin 2 (Drain)	Main high-side power switch node	Connected to metal tab; requires isolation from heatsink unless using insulating washer; handles full V_DSS stress
Pin 3 (Gate)	Control input for channel conduction	High-impedance MOS gate; sensitive to ESD; requires RC snubber or gate resistor (4.7 Ω typical) for ringing suppression

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse unclamped inductive switching survival up to rated I_AS without degradation
MESH OVERLAY™ process	Enables higher cell density and lower R_DS(on) vs. conventional planar HV MOSFETs at same voltage rating
Extremely high dv/dt capability	5 V/ns rating prevents false turn-on during fast voltage transients in bridge-leg or flyback configurations
Low gate charge (37 nC)	Reduces driver power consumption and enables use of low-cost gate drivers in <500 kHz applications
Fast body diode (t_rr = 198 ns)	Minimizes switching losses in non-synchronous rectified topologies and improves light-load efficiency

Applications

LED Streetlight Driver

Telecom DC-DC Converter

Use Scenario: High-efficiency buck-boost LED driver operating from 100–300 V DC input in outdoor lighting systems.

IC Role / Device Role / Timing Role: Primary high-side switching element in isolated flyback topology, handling 8 A peak primary current at 100 kHz.

Use Value: Avalanche ruggedness ensures reliability under lightning-induced surges; 0.38 Ω R_DS(on) reduces conduction loss by ~15 % vs. comparable 0.45 Ω devices.

Use Scenario: 48 V input, 12 V/20 A output DC-DC converter in telecom shelf power distribution units.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side LLC resonant stage, conducting 20 A pulsed current.

Use Value: Low Q_rr (1.1 µC) and fast t_rr (198 ns) minimize reverse recovery losses during zero-voltage switching transitions.

Industrial Motor Starter

AC-DC Power Supply

Use Scenario: Soft-start circuit for 3-phase 400 V AC motor drives, limiting inrush current during initial power-up.

IC Role / Device Role / Timing Role: Inrush current limiter placed between rectifier output and bulk capacitor bank, switched on after precharge.

Use Value: 250 V V_DSS withstands 3-phase rectified peaks (~565 V) with external clamping; TO-220 package allows bolt-down heatsinking for 10 s overload pulses.

Use Scenario: 230 V AC input, 12 V/8 A output open-frame power supply for industrial control panels.

IC Role / Device Role / Timing Role: Main switch in active clamp forward converter, switching at 200 kHz with 125 V V_DD.

Use Value: 5 V/ns dv/dt immunity prevents parasitic turn-on during clamp reset; 1.56 °C/W R_thj-case enables compact heatsink design at 8 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK25Z	R_DS(on) = 0.42 Ω (typ), Q_g = 27 nC, lower V_DSS = 250 V but Zener-protected gate	Better gate ESD robustness; slightly higher conduction loss; optimized for lower-frequency (<100 kHz) motor control	Prefer when gate drive noise immunity is critical and switching frequency is below 100 kHz
IRF640N	R_DS(on) = 0.18 Ω (typ), V_DSS = 200 V, C_iss = 1100 pF, no avalanche rating	Lower R_DS(on) but insufficient voltage margin for 230 V AC rectified rails; not avalanche tested	Only suitable for 100–120 V AC input designs with strict cost constraints and no surge requirements

Compared with STP7NK25Z and IRF640N, STP8NS25 uniquely balances 250 V rating, 0.38 Ω R_DS(on), and guaranteed avalanche capability - making it the only option among the three qualified for telecom and industrial lighting applications with line-voltage transients.

Availability

STP8NS25 is available at Aetrix Electronics and suitable for high-current switching, SMPS design, and lighting equipment requiring stable component supply across extended production cycles.

Supply support for STP8NS25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

STP8NS25 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in lighting ballasts, telecom power supplies, and industrial DC-DC conversion.

FAQ

Is STP8NS25 suitable for use in synchronous rectification?

Yes - its fast body diode (t_rr = 198 ns, Q_rr = 1.1 µC) and low R_DS(on) enable efficient synchronous rectification in secondary-side LLC or forward converters. However, external gate drive timing must account for its 37 nC Q_g and 2–4 V V_GS(th) to avoid shoot-through.

What is the maximum safe operating frequency for STP8NS25 in a hard-switched flyback?

In hard-switched flyback topologies, STP8NS25 supports up to 250 kHz with proper gate drive (RG = 4.7 Ω) and heatsinking. Above this, switching losses (dominated by Q_g × f × V_GS) exceed thermal limits unless derated to ≤5 A average current or actively cooled.

Does STP8NS25 require a gate resistor, and what value is recommended?

Yes - a 4.7 Ω gate resistor is specified in the datasheet test circuit for switching time measurement and ringing suppression. This value balances turn-on speed (13 ns t_d(on)) and EMI control; values below 2.2 Ω increase risk of oscillation, while >10 Ω significantly slows switching and raises losses.

Can STP8NS25 replace STP8NS25FP in the same PCB footprint?

No - STP8NS25 uses TO-220 (3.75 mm lead diameter, 16.4 mm L2), while STP8NS25FP uses TO-220FP (smaller outline, 3.0 mm Ø lead, 16.0 mm L2, different pin spacing). Mechanical interference and thermal pad alignment will prevent drop-in replacement without board revision.

STP8NS25 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP8NS25 FAQ

1.How can I place an order for STP8NS25 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NS25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NS25 reliable?

The price and inventory of STP8NS25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NS25 is usually 5 days.

3.What payment methods are accepted for STP8NS25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NS25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NS25?

STP8NS25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NS25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NS25?

For technical support, including STP8NS25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NS25 requirements.

6.How does Aetrix verify that STP8NS25 is sourced from the original manufacturer or authorized distributors?

All STP8NS25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NS25 meets industry standards.

7.What is the process for return or replacement of STP8NS25?

All STP8NS25 units undergo pre-shipment inspection (PSI). If there is an issue with STP8NS25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NS25 part is unused and in its original packaging.

Return procedure for STP8NS25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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