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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8NS25FP

Name: STP8NS25FP
Brand: STMicroelectronics
SKU: STP8NS25FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP8NS25FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP8NS25FP.pdf

Description:: MOSFET N-CH 250V 8A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP8NS25FP from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220FP package, rated for 250 V V_DSS, 8 A continuous drain current at T_C = 25°C, and 0.38 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and integrated source-drain diode with 1.7 V forward voltage at 8 A - deployed in high-speed switching stages of lighting ballasts and telecom DC-DC converters.

For engineers reviewing the STP8NS25FP datasheet, STP8NS25FP pinout, STP8NS25FP application, or STP8NS25FP equivalent, this device is selected for high-reliability, medium-voltage switching where thermal management under pulsed loads (32 A peak), low gate charge (37 nC typ.), and robust unclamped inductive switching performance are critical design requirements.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ high-voltage process and STrip layout with edge termination, enabling high breakdown margin and stable R_DS(on) over temperature. Its 150°C max junction temperature and 4.11 °C/W R_thj-case reflect optimized thermal path for surface-mount-compatible TO-220FP mounting.

Dynamic behavior is characterized by 13 ns turn-on delay, 51 ns turn-off delay, and 198 ns reverse recovery time (T_j = 150°C) with 1.1 µC Q_rr, supporting hard-switched topologies requiring fast, controlled diode recovery in SMPS and lighting inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - supports input rails up to 200 V DC with safety margin in offline SMPS and industrial DC supplies.
R_DS(on) max	0.45 Ω - limits conduction loss to ≤28.8 W at 8 A, defining minimum heatsink requirement in continuous operation.
Q_g typ	37 nC - enables efficient gate drive with standard 1–2 A peak drivers, reducing switching loss in 50–500 kHz applications.
I_D pulsed	32 A - sustains short-circuit or overload events without failure, verified via unclamped inductive test (UIL).
T_j max	150 °C - allows operation in sealed enclosures or high-ambient environments (e.g., LED driver housings) with derating.
dv/dt rating	5 V/ns - ensures immunity to parasitic turn-on during high-slew-rate commutation in bridge configurations.
V_SD	1.7 V @ 8 A - defines forward conduction loss of internal body diode during synchronous rectification or freewheeling.

Pinout & Package

TO-220FP package: insulated case, vertical mounting, single-row 3-pin configuration with metal tab (drain) electrically isolated from pins. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires <100 nA leakage budget and 10 V threshold for full enhancement.
Pin 2	Drain (Tab)	Main high-side power terminal; electrically connected to insulated metal tab - used for heatsinking and high-current return path.
Pin 3	Source	Reference node for gate drive and current sensing; ties to power ground or low-side switch node in half-bridge.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling (E_AS) without parameter shift - eliminates need for external snubbers in inductive switching.
MESH OVERLAY™ process	Delivers uniform cell distribution and edge termination, achieving <0.45 Ω R_DS(on) at 250 V while maintaining >1000-cycle UIS reliability.
TO-220FP insulation	2000 V DC isolation between tab and pins enables direct heatsink mounting without insulating pads in grounded-chassis designs.
Low Q_gd/Q_gs ratio	14.8 nC / 5.2 nC = 2.85 - suppresses Miller-induced shoot-through in bridge legs and improves hard-switching stability.

Applications

LED Streetlight Ballast

Telecom DC-DC Converter

Use Scenario: High-efficiency buck-boost LED driver operating from 100–300 V DC input in outdoor-rated luminaires.

IC Role / Device Role / Timing Role: Primary switching transistor in primary-side regulation stage, switching at 65 kHz with zero-voltage transition assistance.

Use Value: 0.38 Ω R_DS(on) minimizes conduction loss at 8 A load; 150°C T_j rating ensures reliability in thermally constrained aluminum housings.

Use Scenario: Isolated forward converter supplying +48 V/10 A to telecom shelf systems with strict efficiency and EMI targets.

IC Role / Device Role / Timing Role: Main power switch in primary-side active clamp circuit, handling 250 V reflected output voltage.

Use Value: 5 V/ns dv/dt capability prevents false triggering during transformer leakage spikes; 198 ns t_rr reduces diode recovery loss in clamp loop.

Industrial Motor Starter

AC-DC Lighting Inverter

Use Scenario: Soft-start module for 3-phase PFC-fed induction motor drives up to 1.5 kW, requiring robust short-circuit tolerance.

IC Role / Device Role / Timing Role: High-side switch in IGBT gate drive auxiliary supply, delivering regulated 15 V to gate drivers.

Use Value: 32 A pulsed current rating withstands startup surges; 100% avalanche testing validates survivability during bus fault conditions.

Use Scenario: Electronic ballast for T5 fluorescent lamps operating at 25–65 kHz with dimming interface.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in resonant inverter topology, driven by IR2110-based gate driver.

Use Value: Low C_iss (770 pF) and C_rss (48 pF) enable clean 65 kHz square-wave switching with minimal gate drive power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK25Z	Same V_DSS and I_D, but Zener-protected gate (±30 V), higher R_DS(on) (0.48 Ω), TO-220 (non-insulated).	Requires external gate protection and insulating pad for heatsink mounting; less suitable for compact, grounded-chassis lighting designs.	Prefer when gate overvoltage risk exceeds 20 V and cost sensitivity outweighs thermal advantage.
IRFIBS20N25B	250 V, 20 A, 0.22 Ω R_DS(on), TO-247, no insulation, higher Q_g (71 nC).	Higher current capacity but larger footprint and no isolation - demands redesign of mechanical layout and gate drive strength.	Choose only when system-level current demand exceeds 8 A and board space permits TO-247 mounting.

Compared with STP8NK25Z and IRFIBS20N25B, the STP8NS25FP uniquely balances insulation, thermal resistance (4.11 °C/W), and low gate charge for space-constrained, grounded-chassis lighting and telecom converters - making it optimal where mounting simplicity and switching efficiency coexist.

Availability

STP8NS25FP is available at Aetrix Electronics and suitable for LED streetlight ballasts, telecom DC-DC converters, and industrial motor starters requiring stable component supply across multi-year production cycles.

Supply support for STP8NS25FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's Power MOSFET portfolio targeting high-reliability, medium-voltage switching applications - engineered specifically for lighting, telecom, and industrial power conversion where ruggedness and thermal efficiency are prioritized.

FAQ

Is STP8NS25FP pin-compatible with STP8NS25?

Yes, STP8NS25FP and STP8NS25 share identical pinout (Gate-Drain-Source) and electrical specifications, but differ in package: STP8NS25 uses standard TO-220 (non-insulated tab), while STP8NS25FP uses insulated TO-220FP with 2000 V DC isolation. Mechanical mounting and heatsinking requirements differ accordingly.

What is the maximum safe operating area (SOA) limit at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 5 A. The SOA curve (Figure 3 in datasheet) shows that at 100 V V_DS, the device supports ≤4.5 A for 10 ms pulses. Derating follows 0.24 W/°C beyond 25°C case temperature due to TO-220FP's higher thermal resistance.

Can STP8NS25FP be used in synchronous rectification?

No - its body diode has 1.7 V forward voltage and 198 ns reverse recovery time, making it unsuitable for high-frequency synchronous rectification. It is designed for hard-switched primary-side switching, not secondary-side low-loss conduction. Dedicated SR controllers with logic-level MOSFETs are required for that function.

Does STP8NS25FP require gate resistors for EMI suppression?

Yes - a 4.7 Ω gate resistor is specified in the datasheet switching test circuit (Figure 3) to control dv/dt and minimize EMI. Omitting it risks oscillation and excessive gate ringing due to the device's low input capacitance (770 pF) and high transconductance (7 S), especially with long PCB traces.

STP8NS25FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP8NS25FP FAQ

1.How can I place an order for STP8NS25FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NS25FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NS25FP reliable?

The price and inventory of STP8NS25FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NS25FP is usually 5 days.

3.What payment methods are accepted for STP8NS25FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NS25FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NS25FP?

STP8NS25FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NS25FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NS25FP?

For technical support, including STP8NS25FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NS25FP requirements.

6.How does Aetrix verify that STP8NS25FP is sourced from the original manufacturer or authorized distributors?

All STP8NS25FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NS25FP meets industry standards.

7.What is the process for return or replacement of STP8NS25FP?

All STP8NS25FP units undergo pre-shipment inspection (PSI). If there is an issue with STP8NS25FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NS25FP part is unused and in its original packaging.

Return procedure for STP8NS25FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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