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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP90N4F3

Name: STP90N4F3
Brand: STMicroelectronics
SKU: STP90N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP90N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP90N4F3.pdf

Description:: MOSFET N-CH 40V 80A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,006

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Product details

Overview

STP90N4F3 from STMicroelectronics is an N-channel 40 V, 80 A, 5.4–6.2 mΩ STripFET™ III Power MOSFET in TO-220 package, designed for high-current switching applications requiring low conduction loss and robust avalanche capability. It delivers 110 W total dissipation at 25 °C, features standard gate threshold (2–4 V), and is 100% avalanche tested for reliability in inductive load switching.

For engineers reviewing the STP90N4F3 datasheet, STP90N4F3 pinout, STP90N4F3 application, or STP90N4F3 equivalent, this page provides verified electrical ratings, thermal resistance (1.36 °C/W junction-to-case), dynamic parameters (Qg = 54 nC), diode recovery performance (trr = 45 ns), and real-world switching context for motor control, DC-DC converters, and power supply OR-ing.

Technical Context

This MOSFET employs ST's STripFET™ III process to minimize R_DS(on) while maintaining fast switching and rugged unclamped inductive switching (UIS) capability. Its gate threshold voltage (2–4 V) enables direct drive from 3.3 V or 5 V logic, and its 8 V/ns dv/dt rating supports stable operation in noisy high-speed switching environments.

The device integrates a robust body diode with 80 A continuous source-drain current and 1.5 V forward voltage at 80 A, enabling efficient synchronous rectification and freewheeling in half-bridge topologies. Thermal design is supported by validated junction-to-case resistance of 1.36 °C/W and junction-to-ambient data for TO-220 on FR-4 PCB (50 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage; suitable for 24 V and 36 V nominal bus systems with margin.
R_DS(on) max	< 6.2 mΩ @ V_GS = 10 V, I_D = 40 A - Low conduction loss enabling <1.5 W dissipation at 40 A, critical for thermal management.
I_D continuous	80 A @ T_C = 25 °C - High current handling for industrial motor drives and high-power SMPS primary switches.
E_AS	400 mJ - Single-pulse avalanche energy rating confirms ruggedness under transient overvoltage conditions.
Q_g	54 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., TC4427, UCC27531).
t_r/t_f	15/15 ns typ - Fast rise/fall times support >500 kHz switching in resonant and hard-switched topologies.
T_j max	175 °C - Extended junction temperature range allows operation in high-ambient industrial environments.

Pinout & Package

STP90N4F3 is housed in a through-hole TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Gate (G)	Control input; requires ≤ ±20 V gate-source voltage; 200 nA leakage ensures low static power draw.
Lead 2 (center)	Drain (D)	Main current path output; connected to metal tab; must be electrically isolated from heatsink unless system ground-referenced to drain.
Lead 3 (right)	Source (S)	Reference node for gate drive; carries full load current; low-inductance PCB layout essential for EMI control.

Key Features

Feature	Design Value
STripFET™ III technology	Enables sub-6.2 mΩ R_DS(on) at 40 V rating, reducing conduction loss by ~25% vs prior-generation 40 V MOSFETs.
100% avalanche tested	Guarantees UIS capability up to 400 mJ per pulse, eliminating need for external snubbers in relay replacement or solenoid driving.
Standard gate threshold (2–4 V)	Supports direct interface with microcontrollers and logic-level drivers without level-shifting circuitry.
Low Q_gd/Q_g ratio (8/54 nC)	Minimizes Miller plateau duration, improving immunity to false turn-on during high dv/dt commutation.
Robust body diode (trr = 45 ns)	Enables reliable freewheeling in synchronous buck and half-bridge converters without external Schottky supplementation.

Applications

Motor Drive Inverter

DC-DC Primary Switch

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers or power tools.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 80 A peak phase current with <15 ns switching transitions.

Use Value: Low R_DS(on) reduces I²R losses below 1.2 W at 40 A, enabling compact heatsink design and >96% efficiency at rated load.

Use Scenario: Primary-side switch in 24 V input, 400 V output flyback or LLC resonant converter for industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz; withstands 40 V V_DS with 8 V/ns dv/dt immunity.

Use Value: 400 mJ avalanche rating eliminates need for clamping circuits during transformer leakage spike events.

Power Supply OR-ing

Industrial Relay Replacement

Use Scenario: Back-to-back configuration for redundant 24 V DC power inputs in PLC backplanes.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch; leverages low R_DS(on) and integrated body diode for automatic path selection.

Use Value: 1.5 V body diode forward drop at 80 A enables lower forward loss than discrete Schottky + MOSFET solutions.

Use Scenario: Solid-state replacement for 24 V/30 A electromechanical relays in factory automation I/O modules.

IC Role / Device Role / Timing Role: Load switch controlled by PLC output; sustains 320 A pulsed current during inrush.

Use Value: 320 A pulsed drain current rating and 100% avalanche testing ensure reliable hot-swap and short-circuit survival.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8.0 mΩ @ 10 V (vs. 6.2 mΩ); Q_g = 71 nC (vs. 54 nC); no avalanche rating specified.	Higher conduction loss and slower switching limit use in high-frequency or thermally constrained designs.	Prefer STP90N4F3 where efficiency, thermal headroom, or avalanche ruggedness are critical.
IXTP80N04T	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 62 nC; T_j max = 175 °C; TO-220 package.	Similar R_DS(on) but higher gate charge increases driver loss; no published E_AS value.	STP90N4F3 offers better dv/dt immunity (8 V/ns) and guaranteed avalanche performance for inductive loads.

Compared with IRF3205PbF and IXTP80N04T, STP90N4F3 delivers lower R_DS(on), lower Q_g, and certified avalanche ruggedness-making it optimal for high-reliability 24–36 V industrial switching where thermal margin and transient survivability are design priorities.

Availability

STP90N4F3 is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC primary switches, power supply OR-ing circuits, and industrial relay replacements requiring stable component supply and long-term manufacturability.

Supply support for STP90N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STP90N4F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion, motor control, and solid-state relay applications.

FAQ

What is the maximum safe operating temperature for STP90N4F3?

The STP90N4F3 has a maximum operating junction temperature of 175 °C and a storage temperature range of –55 to 175 °C. Its thermal resistance junction-to-case is 1.36 °C/W, meaning a 100 W power dissipation would raise junction temperature by 136 °C above case temperature-so case temperature must remain below 39 °C for safe 175 °C operation. Derating begins at 25 °C ambient at 0.73 W/°C.

Can STP90N4F3 be used in synchronous rectification?

Yes-STP90N4F3 features a low forward voltage body diode (1.5 V at 80 A) and fast reverse recovery time (45 ns typical), making it suitable for synchronous rectification in buck, boost, and LLC converters. However, external gate control is required to actively drive the MOSFET during the diode conduction interval, and layout must minimize source inductance to avoid shoot-through risk.

Is STP90N4F3 pin-compatible with other TO-220 N-channel MOSFETs?

STP90N4F3 uses standard TO-220 pinout (G-D-S, left-to-right), matching industry convention for N-channel devices. It is mechanically and electrically pin-compatible with most TO-220 N-channel MOSFETs such as IRFZ44N and FQP50N06L-but electrical differences (R_DS(on), Q_g, avalanche rating) require validation in the target circuit before substitution.

Does STP90N4F3 require a gate resistor for stability?

A gate resistor (typically 4.7–10 Ω) is recommended to dampen ringing and control switching speed. The datasheet specifies switching times using RG = 4.7 Ω; omitting it risks oscillation due to gate loop inductance and Miller capacitance interaction. For EMI-sensitive applications, a small ferrite bead in series with the gate resistor further suppresses high-frequency resonance.

STP90N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP90N4F3 FAQ

1.How can I place an order for STP90N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP90N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP90N4F3 reliable?

The price and inventory of STP90N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP90N4F3 is usually 5 days.

3.What payment methods are accepted for STP90N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP90N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP90N4F3?

STP90N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP90N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP90N4F3?

For technical support, including STP90N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP90N4F3 requirements.

6.How does Aetrix verify that STP90N4F3 is sourced from the original manufacturer or authorized distributors?

All STP90N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP90N4F3 meets industry standards.

7.What is the process for return or replacement of STP90N4F3?

All STP90N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STP90N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP90N4F3 part is unused and in its original packaging.

Return procedure for STP90N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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