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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP90N55F4

Name: STP90N55F4
Brand: STMicroelectronics
SKU: STP90N55F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP90N55F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP90N55F4.pdf

Description:: MOSFET N-CH 55V 90A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,251

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Product details

Overview

STP90N55F4 from STMicroelectronics is a 55 V, 90 A, N-channel Power MOSFET in TO-220 package with 7.5 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies. It features fast switching, low gate charge (Q_g = 85 nC), and avalanche-rated ruggedness.

For engineers reviewing the STP90N55F4 datasheet, STP90N55F4 pinout, STP90N55F4 application, or STP90N55F4 equivalent, key selection criteria include R_DS(on), Q_g, SOA limits, avalanche energy rating (E_AS = 520 mJ), and thermal resistance (R_thJC = 1.2 °C/W).

Technical Context

This MOSFET employs ST's proprietary STripFET™ F4 technology, delivering enhanced conduction and switching performance via reduced cell pitch and optimized trench geometry. Its gate threshold voltage (V_GS(th)) ranges from 2.0 to 4.0 V, enabling robust 3.3 V and 5 V logic-level drive compatibility.

The device supports continuous drain current up to 90 A at T_C = 25 °C and is characterized for operation across –55 °C to +175 °C junction temperature range. Its 100% UIS-tested avalanche capability ensures reliability under inductive load switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines safe operating ceiling in buck converters and half-bridge topologies.
R_DS(on) @ V_GS = 10 V	7.5 mΩ - Low on-resistance minimizes conduction loss in high-current power stages (e.g., 48 V input, 12 V output DC-DC).
Q_g	85 nC - Gate charge value directly impacts driver sizing and switching loss; enables efficient operation at 100–500 kHz.
E_AS	520 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients without external snubbers.
R_thJC	1.2 °C/W - Junction-to-case thermal resistance determines heatsink sizing for sustained 90 A operation at T_C ≤ 100 °C.
I_D (continuous)	90 A @ T_C = 25 °C - Continuous drain current rating validated under controlled case temperature; derates to 55 A at T_C = 100 °C.

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected). Standard 3-pin through-hole mounting; tab electrically tied to drain for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulating washer if heatsink is grounded.
Gate	Control terminal for channel formation	High-impedance input; requires <10 Ω series gate resistor to damp oscillation and limit dI/dt.
Source	Reference node for gate drive and current return	Common connection point for low-side switch configuration; ties to power ground in buck/LLC topologies.

Key Features

Feature	Design Value
Extremely low R_DS(on)	Reduces conduction losses by >35% vs. prior-generation F3 devices at same voltage class, improving full-load efficiency in 1 kW SMPS.
Fast switching with low Q_g	Enables higher-frequency operation (up to 500 kHz) without excessive driver power dissipation or EMI penalties.
100% avalanche tested	Guarantees single-pulse ruggedness to 520 mJ, eliminating need for external clamping in motor H-bridge freewheeling paths.
Logic-level compatible V_GS(th)	Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs, reducing gate driver BOM cost and complexity.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage in 5–10 kW HVAC compressors and conveyor drives.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules; handles 60–90 A peak phase current.

Use Value: 7.5 mΩ R_DS(on) reduces thermal stress at 16 kHz PWM, enabling compact heatsink design and >97% inverter efficiency.

Use Scenario: Primary-side synchronous rectifier in 80 PLUS Titanium 1.5 kW server power supply.

IC Role / Device Role / Timing Role: High-current, high-voltage switching transistor in LLC resonant converter primary leg.

Use Value: 55 V rating and 520 mJ E_AS withstand reflected voltage spikes during zero-voltage switching transitions.

Solar Microinverters

EV Onboard Charger (OBC) DC-DC Stage

Use Scenario: DC-DC boost stage in single-phase 300–500 W photovoltaic microinverters.

IC Role / Device Role / Timing Role: Main power switch in interleaved boost converter handling up to 12 A input current.

Use Value: Low Q_g (85 nC) enables precise gate timing control at 200 kHz, minimizing dead-time losses and THD.

Use Scenario: Isolated DC-DC stage in 3.3 kW bidirectional OBC converting 400 V battery to 12 V/48 V auxiliary bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–150 kHz.

Use Value: R_thJC = 1.2 °C/W allows stable 90 A pulsed operation with forced-air cooling, supporting peak power density >2.5 kW/L.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH90N55L2	R_DS(on) = 8.5 mΩ, Q_g = 92 nC, E_AS = 480 mJ	Lower avalanche margin and slightly higher conduction loss; suitable for non-critical industrial drives.	Select when lower gate charge sensitivity is acceptable and cost is prioritized over ruggedness.
IRFP90N55LPBF	R_DS(on) = 8.0 mΩ, Q_g = 105 nC, no 100% UIS test data published	Higher switching loss due to elevated Q_g; limited documentation on avalanche performance.	Prefer only in legacy designs where footprint compatibility is mandatory and transient stress is minimal.

Compared with IXTH90N55L2 and IRFP90N55LPBF, STP90N55F4 delivers superior avalanche robustness (520 mJ), lowest R_DS(on) (7.5 mΩ), and best Q_g/R_DS(on) ratio-making it optimal for high-reliability, high-frequency power conversion where thermal and transient margins are critical.

Availability

STP90N55F4 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for STP90N55F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for industrial, automotive, and consumer markets.

The STP90N55F4 belongs to ST's STripFET™ F4 power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and motor control systems demanding low R_DS(on), fast switching, and proven avalanche ruggedness.

FAQ

Is STP90N55F4 suitable for 48 V automotive 12 V DC-DC converters?

No. STP90N55F4 is not qualified for automotive applications and lacks AEC-Q101 certification. Its 55 V V_DS rating provides insufficient margin for automotive load-dump transients (up to 87 V), and its SOA curve is not validated for automotive temperature cycling or humidity testing. Use ST's AEC-Q101-qualified STD90N55F4 instead.

What is the maximum recommended PCB copper area for thermal relief with STP90N55F4 in TO-220?

For optimal thermal performance, ST recommends ≥ 10 cm² of 2 oz (70 µm) copper on the drain pad, connected via ≥ 8 thermal vias (0.4 mm diameter, spaced ≤ 2 mm apart) to internal ground planes. This achieves ~2.5 °C/W effective R_thJA in still air, allowing 45 A continuous current at ambient 50 °C.

Does STP90N55F4 require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device has a typical V_GS(th) of 3.0 V and exhibits strong Miller immunity due to low C_rss/C_iss ratio (≈ 0.04). A 0 V to 12 V gate drive suffices; however, a –5 V to 0 V negative bias improves noise immunity in >100 V/ns environments and is recommended for high-reliability industrial inverters.

Can STP90N55F4 be paralleled with identical units without external gate resistors?

No. Even matched units exhibit parametric spread in V_GS(th) (±1.0 V) and R_DS(on) (±20%), causing current imbalance. Each device must use individual 4.7–10 Ω gate resistors to ensure synchronized turn-on/turn-off and prevent thermal runaway under dynamic load conditions.

STP90N55F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP90N55F4 FAQ

1.How can I place an order for STP90N55F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP90N55F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP90N55F4 reliable?

The price and inventory of STP90N55F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP90N55F4 is usually 5 days.

3.What payment methods are accepted for STP90N55F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP90N55F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP90N55F4?

STP90N55F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP90N55F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP90N55F4?

For technical support, including STP90N55F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP90N55F4 requirements.

6.How does Aetrix verify that STP90N55F4 is sourced from the original manufacturer or authorized distributors?

All STP90N55F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP90N55F4 meets industry standards.

7.What is the process for return or replacement of STP90N55F4?

All STP90N55F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP90N55F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP90N55F4 part is unused and in its original packaging.

Return procedure for STP90N55F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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