STMicroelectronics STP95N04
- Part No.:
- STP95N04
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP95N04.pdf
- Description:
- MOSFET N-CH 40V 80A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,629
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STP95N04 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 40V VDS, 5.4 mΩ RDS(on) at VGS = 10V, 80A continuous drain current at TC = 25°C, and 110W total power dissipation. It features rugged avalanche capability (400 mJ single-pulse), low gate charge (40 nC), and standard threshold drive for compatibility with 5V logic.
For engineers reviewing the STP95N04 datasheet, STP95N04 pinout, STP95N04 application, or STP95N04 equivalent, this device is selected for high-current DC switching in industrial motor drives, DC-DC converter primary-side switches, and battery protection circuits where low conduction loss and robust unclamped inductive switching performance are critical.
Technical Context
This MOSFET employs ST's STripFET™ II process with "Single Feature Size™" strip geometry, enabling high cell density and reproducible manufacturing. Its structure delivers low RDS(on) while maintaining strong avalanche ruggedness and fast switching via minimized gate-drain charge (Qgd = 8 nC) and low output capacitance (Coss = 580 pF).
The device supports standard gate drive (VGS(th) = 2–4 V), operates up to 175°C junction temperature, and is qualified per JEDEC JESD22-A108 for reliability. Its source-drain diode exhibits 1.5 V forward voltage at 80 A and 45 ns reverse recovery time under specified inductive load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage before avalanche onset; defines safe operation in 24V/36V bus systems. |
| RDS(on) | 5.4 mΩ @ VGS = 10 V - Enables ≤4.3 W conduction loss at 80 A, reducing heatsink requirements. |
| ID (cont) | 80 A @ TC = 25°C - Sustains high-current loads in motor H-bridge legs or power supply outputs. |
| EAS | 400 mJ - Withstands unclamped inductive energy spikes without failure, critical for relay/motor snubbing. |
| Qg | 40 nC - Determines gate driver current demand; enables efficient 100 kHz+ switching with moderate drive strength. |
| Tj(max) | 175°C - Supports operation in sealed enclosures or high-ambient industrial environments. |
| Rth(j–case) | 1.36 °C/W - Allows direct thermal coupling to heatsinks; 80 A @ 100°C case yields ~105°C junction rise. |
Pinout & Package
TO-220 package: 3-terminal through-hole mounting with isolated tab (drain-connected). Standard lead-forming allows vertical or horizontal PCB mounting with mechanical stress relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Low-inductance connection point for ground plane routing; ties directly to PCB ground pour. |
| 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <200 nA leakage; sensitive to ESD-requires series resistor and TVS clamp. |
| 3 (Drain) | Main high-side power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees minimum 400 mJ single-pulse energy handling-no screening lot sampling. |
| Standard threshold drive (VGS(th) = 2–4 V) | Direct interface with 3.3V/5V microcontrollers and gate drivers without level-shifting. |
| Low gate charge (Qg = 40 nC) | Reduces switching losses and driver power consumption in high-frequency SMPS designs. |
| Rugged source-drain diode (trr = 45 ns) | Minimizes voltage overshoot during freewheeling in synchronous rectification and half-bridge topologies. |
Applications
| Industrial Motor Drives | DC-DC Converter Switches |
|---|---|
Use Scenario: High-current H-bridge for 24V BLDC motor control in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element conducting up to 80A peak current with minimal I²R loss. Use Value: 5.4 mΩ RDS(on) limits conduction loss to 34.6 W at 80A, enabling compact heatsink design. | Use Scenario: Primary-side switch in 400W isolated flyback converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 65 kHz with controlled dv/dt (8 V/ns). Use Value: Low Qgd/Qg ratio ensures clean turn-off and reduces cross-conduction risk in transformer-driven topologies. |
| Battery Protection Circuits | Power Distribution Switches |
Use Scenario: Overcurrent and short-circuit protection in 36V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: Bidirectional current-sensing switch with integrated avalanche energy absorption. Use Value: 400 mJ EAS withstands fault currents during fuseless protection response (≤100 µs). | Use Scenario: High-side power switch for 24V auxiliary rail in railway signaling control units. IC Role / Device Role / Timing Role: Load disconnect device with low thermal resistance (1.36 °C/W) for sustained 65A operation. Use Value: Junction-to-case thermal path enables stable 100°C case temperature under full load without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4 mΩ (lower), but VDS = 40V same; Qg = 131 nC (3.3× higher); TO-220 package | Higher gate drive power required; slower switching; better for low-frequency, ultra-low-loss apps | Select when minimizing conduction loss dominates over switching loss and gate drive capability is ample. |
| IXTP95N04T | RDS(on) = 5.5 mΩ (nearly identical); VDS = 40V; Qg = 36 nC (slightly lower); TO-220 package | Near drop-in replacement with marginally faster turn-on; same thermal profile | Prefer when seeking second-source availability with matched RDS(on) and improved gate efficiency. |
Compared with IRF1404PBF and IXTP95N04T, STP95N04 offers balanced trade-offs: lower Qg than IRF1404PBF for efficient high-frequency use, and tighter RDS(on) tolerance than IXTP95N04T while maintaining ST's proven avalanche ruggedness for industrial fault tolerance.
Availability
STP95N04 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter switches, battery protection circuits, and power distribution switches requiring stable component supply across multi-year production cycles.
Supply support for STP95N04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
The STripFET™ Power MOSFET product line targets high-efficiency, high-reliability power conversion-optimized for ruggedness, low RDS(on), and consistent parametric performance in harsh environments.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STP95N04 supports 65A continuous drain current at TC = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within its 1.36 °C/W junction-to-case thermal resistance.
Is the STP95N04 RoHS-compliant and lead-free?
Yes. The STP95N04 is manufactured in ECOPACK® packaging with lead-free second-level interconnect, compliant with JEDEC JESD97 and RoHS Directive 2011/65/EU. The inner box label indicates the lead-free category per ST's environmental compliance program.
Can STP95N04 replace STD95N04 in existing designs?
Yes-STP95N04 and STD95N04 share identical electrical specifications (VDS, RDS(on), ID, PTOT) and thermal ratings. The only difference is package: STP95N04 uses TO-220, STD95N04 uses DPAK. Mechanical redesign is required, but no electrical requalification is needed.
What is the recommended gate resistor value for 100 kHz switching?
A 4.7 Ω gate resistor is validated in the datasheet (Table 5 test conditions) for 100 kHz-class operation. This value balances switching speed (td(off) = 40 ns, tf = 15 ns) and gate oscillation suppression, assuming a 12V gate drive with ≤2A peak current capability.
STP95N04 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP95N04 FAQ
1.How can I place an order for STP95N04 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP95N04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP95N04 reliable?
The price and inventory of STP95N04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP95N04 is usually 5 days.
3.What payment methods are accepted for STP95N04?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP95N04 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP95N04?
STP95N04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP95N04 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP95N04?
For technical support, including STP95N04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP95N04 requirements.
6.How does Aetrix verify that STP95N04 is sourced from the original manufacturer or authorized distributors?
All STP95N04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP95N04 meets industry standards.
7.What is the process for return or replacement of STP95N04?
All STP95N04 units undergo pre-shipment inspection (PSI). If there is an issue with STP95N04, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP95N04 part is unused and in its original packaging.
Return procedure for STP95N04:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STP95N04 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
