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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP95N2LH5

Name: STP95N2LH5
Brand: STMicroelectronics
SKU: STP95N2LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP95N2LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP95N2LH5.pdf

Description:: MOSFET N-CH 25V 80A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,887

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Product details

Overview

STP95N2LH5 from STMicroelectronics is an N-channel 25 V, 80 A Power MOSFET in TO-220 package with R_DS(on) < 4.9 mΩ at V_GS = 10 V and high avalanche ruggedness (E_AS = 165 mJ), designed for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the STP95N2LH5 datasheet, STP95N2LH5 pinout, STP95N2LH5 application, or STP95N2LH5 equivalent, this device supports high-current switching with low gate charge (Q_g = 13.4 nC), fast switching times (t_d(off) = 22 ns), and robust thermal performance (R_thj-case = 2.14 °C/W).

Technical Context

This STripFET™ V MOSFET uses trench-gate technology to achieve ultra-low on-resistance while maintaining high current capability and avalanche energy rating. Its gate threshold voltage (V_GS(th) = 1 V min) enables compatibility with 3.3 V and 5 V logic-level drivers.

The device features low output capacitance (C_oss = 420 pF) and reverse transfer capacitance (C_rss = 67 pF), supporting high-frequency switching up to several hundred kHz in hard-switched topologies without excessive losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for low-voltage high-current applications like 12 V/24 V bus switching.
R_DS(on) max	< 4.9 mΩ @ V_GS = 10 V - Enables ≤ 31 W conduction loss at 80 A, critical for thermal management in compact power stages.
I_D continuous	80 A @ T_C = 25°C - Supports high-output current designs without parallel devices in TO-220 footprint.
E_AS	165 mJ - Withstands unclamped inductive switching events in motor drives and solenoid controls without failure.
Q_g	13.4 nC - Reduces gate drive power requirement and allows use of low-power drivers (e.g., TC4427) at 100–500 kHz.
t_d(off)	22 ns - Minimizes turn-off delay in synchronous rectification and PWM-controlled buck converters.
R_thj-case	2.14 °C/W - Enables 70 W dissipation with ≤ 150°C junction rise over case, supporting heatsink-limited industrial designs.

Pinout & Package

TO-220 package (Type A) with standard 3-pin configuration: Drain connected to tab, Source and Gate on leads. Mounting tab is electrically connected to Drain for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOSFET gate requiring ≤ 13.4 nC charge for full enhancement; isolated from power paths.
2 (Drain)	High-side power terminal	Internally bonded to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current (80 A) and diode recovery current (I_SDM = 320 A pulsed).

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	Delivers best-in-class conduction + switching loss trade-off for 25 V industrial switch-mode applications.
High avalanche energy rating	165 mJ single-pulse capability ensures reliability in inductive load switching without external snubbers.
Logic-level gate drive	V_GS(th) as low as 1 V enables direct interface with microcontroller GPIOs and low-voltage drivers.
Low C_oss and C_rss	420 pF and 67 pF respectively reduce Miller effect, enabling stable operation with minimal gate oscillation.
ECOPACK® compliant	Meets RoHS and halogen-free requirements for industrial and consumer equipment compliance.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: 12 V input, 50–100 A output synchronous buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: Main high-side switching element operating at 200–300 kHz with forced-air cooling.

Use Value: 4.9 mΩ R_DS(on) limits conduction loss to < 31 W at full load, reducing heatsink size by 35% vs. legacy 6.5 mΩ parts.

Use Scenario: 24 V, 60 A brushed motor control in automated gate actuator with H-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, handling bidirectional current during braking.

Use Value: 165 mJ E_AS withstands flyback energy during rapid deceleration without clamping diodes or derating.

Industrial Solenoid Driver

Hot-Swap Controller Back-End Switch

Use Scenario: 24 V solenoid bank (10× 5 A coils) controlled via PLC output module with PWM modulation.

IC Role / Device Role / Timing Role: Low-loss series switch enabling precise current regulation and soft-start sequencing.

Use Value: 13.4 nC Q_g allows clean 10–20 kHz PWM edge control using integrated driver ICs (e.g., L6387ED).

Use Scenario: 12 V hot-swap board with inrush limiting and fault protection in server backplane.

IC Role / Device Role / Timing Role: OR-ing and current-limiting switch placed between input supply and load rail.

Use Value: 80 A continuous rating supports >1 kW power delivery while R_DS(on) < 4.9 mΩ keeps voltage drop below 400 mV at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (slightly lower), but Q_g = 120 nC - 9× higher than STP95N2LH5.	Higher gate drive power demand limits usable frequency to < 50 kHz; unsuitable for high-frequency SMPS.	Select only if lowest R_DS(on) is primary goal and switching speed is secondary.
IXTP95N25L2	R_DS(on) = 5.2 mΩ, E_AS = 120 mJ - 27% lower avalanche rating; Q_g = 10.5 nC.	Lower E_AS requires additional clamping in motor drive applications with high inductance loads.	Prefer where gate drive efficiency is critical and inductive stress is well-controlled.

Compared with IRF1404ZPBF and IXTP95N25L2, STP95N2LH5 uniquely balances ultra-low R_DS(on), low Q_g, and high E_AS - making it optimal for high-current, high-reliability 25 V switching where both efficiency and ruggedness are required.

Availability

STP95N2LH5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and hot-swap power distribution systems requiring stable component supply across multi-year production cycles.

Supply support for STP95N2LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding minimal conduction loss and high avalanche robustness.

FAQ

What is the maximum safe operating temperature for STP95N2LH5?

The STP95N2LH5 has a maximum junction temperature (T_j) of 175°C and a storage temperature range of –55°C to +175°C. At T_C = 100°C, its continuous drain current drops to 67 A. Thermal design must ensure R_thj-case ≤ 2.14 °C/W and maintain T_j ≤ 150°C under worst-case ambient and power dissipation conditions.

Can STP95N2LH5 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) is specified down to 1 V minimum, and it achieves R_DS(on) < 4.9 mΩ at V_GS = 10 V. However, full enhancement requires ≥ 4.5 V; for reliable 80 A conduction, a dedicated gate driver (e.g., TC4427) is recommended to deliver sufficient peak current and minimize switching losses.

Does STP95N2LH5 include an integrated body diode? What are its recovery characteristics?

Yes - it features a fast intrinsic body diode with t_rr = 32.4 ns, Q_rr = 27.1 nC, and I_RRM = 1.7 A at di/dt = 100 A/µs. These values support synchronous rectification and freewheeling in buck and half-bridge topologies, though external Schottky diodes may be added for ultra-low V_SD in high-efficiency designs.

Is STP95N2LH5 suitable for automotive applications?

No - STP95N2LH5 is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension, or PPAP documentation. It is rated for industrial use only (T_j = –55°C to +175°C), and ST explicitly states non-automotive parts should be used in automotive systems only at the user's own risk.

STP95N2LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.4 nC @ 5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 1817 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP95N2LH5 FAQ

1.How can I place an order for STP95N2LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP95N2LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP95N2LH5 reliable?

The price and inventory of STP95N2LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP95N2LH5 is usually 5 days.

3.What payment methods are accepted for STP95N2LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP95N2LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP95N2LH5?

STP95N2LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP95N2LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP95N2LH5?

For technical support, including STP95N2LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP95N2LH5 requirements.

6.How does Aetrix verify that STP95N2LH5 is sourced from the original manufacturer or authorized distributors?

All STP95N2LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP95N2LH5 meets industry standards.

7.What is the process for return or replacement of STP95N2LH5?

All STP95N2LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STP95N2LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP95N2LH5 part is unused and in its original packaging.

Return procedure for STP95N2LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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