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STMicroelectronics STP9NK70Z

Part No.:
STP9NK70Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP9NK70Z.pdf
Description:
MOSFET N-CH 700V 7.5A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,860

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Product details

Overview

STP9NK70ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in TO-220FP package, rated for 700 V drain-source voltage, 1.2 Ω max RDS(on), and 7.5 A continuous drain current at TC = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance, and gate charge minimized for fast switching in offline SMPS and lighting ballasts.

For engineers reviewing the STP9NK70ZFP datasheet, STP9NK70ZFP pinout, STP9NK70ZFP application, or STP9NK70ZFP equivalent, key selection criteria include its 700 V blocking rating, 1.2 Ω on-resistance at 10 V gate drive, 48–68 nC total gate charge, 230 mJ single-pulse avalanche energy, and TO-220FP insulated package with 2.5 kV RMS isolation.

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to simultaneously reduce RDS(on) and enhance ruggedness. Its Zener-protected gate structure enables robust operation under transient overvoltage conditions without external clamping.

The MOSFET features a built-in body diode with 570 ns reverse recovery time and 5.2 µC reverse recovery charge at 150 °C, supporting hard-switched flyback and resonant topologies where diode commutation stress is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS700 V - supports universal-input offline converters up to 380 V DC bus with margin
RDS(on) max1.2 Ω @ VGS = 10 V - determines conduction loss in 7.5 A continuous applications
Qg48–68 nC - defines gate drive power requirement and switching speed trade-off
EAS230 mJ - enables unclamped inductive switching without failure in PFC or flyback designs
dv/dt4.5 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients
VISO2.5 kV RMS - provides reinforced insulation between leads and heatsink in isolated topologies
IDM30 A pulsed - supports peak-current handling in startup or overload conditions

Pinout & Package

Delivered in TO-220FP (Type B) package with internal insulation barrier, enabling direct mounting to heatsink without additional isolation hardware. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
G (Pin 1)Gate control terminalReceives 10 V logic-level drive; Zener-protected against ±30 V transients
D (Pin 2)Drain high-voltage nodeConnected to primary-side DC bus; electrically isolated from heatsink by package barrier
S (Pin 3)Source return pathReference for gate drive and current sensing; tied to source of driver IC in half-bridge configurations

Key Features

FeatureDesign Value
100% avalanche testedGuarantees single-pulse EAS = 230 mJ at TJ = 25 °C, eliminating screening risk in surge-prone mains inputs
Zener-protected gateIntegrated 30 V bidirectional clamp prevents gate oxide rupture during ESD or Miller-induced spikes
SuperMESH technologyReduces RDS(on) by ~25% vs prior PowerMESH while maintaining >4.5 V/ns dv/dt immunity
Minimized Qg48–68 nC enables use with low-power gate drivers (e.g., STMicroelectronics TD350) in space-constrained designs
TO-220FP insulation2.5 kV RMS isolation allows direct heatsink mounting without insulating pads or sleeves in Class I safety designs

Applications

LED Streetlight DriverIndustrial AC-DC Adapter

Use Scenario: High-efficiency constant-current LED driver operating from 230 V AC mains with active PFC stage.

IC Role / Device Role / Timing Role: Primary-side switch in boost PFC converter, switching at 65–100 kHz.

Use Value: 700 V rating accommodates 385 V DC link with 15% margin; 230 mJ EAS withstands line surges per IEC 61000-4-5.

Use Scenario: 150 W industrial power supply with wide input range (85–264 V AC) and 24 V/6 A output.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge primary side.

Use Value: 4.5 V/ns dv/dt capability prevents spurious turn-on during zero-voltage switching transitions.

Electronic BallastUPS Inverter Stage

Use Scenario: High-frequency fluorescent lamp ballast with integrated ignition and dimming control.

IC Role / Device Role / Timing Role: Half-bridge upper switch driving resonant tank at 25–50 kHz.

Use Value: TO-220FP insulation eliminates need for thermal pad isolation, reducing assembly cost and thermal resistance.

Use Scenario: Online double-conversion UPS with 1 kVA output and battery backup.

IC Role / Device Role / Timing Role: DC-AC inverter switch handling 350 V DC bus and 230 V AC output.

Use Value: 7.5 A continuous current and 30 A pulsed rating support overload and short-circuit fault currents up to 200% for 10 s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP10NK70ZFP700 V, 1.0 Ω max RDS(on), 10 A ID, same TO-220FP packageHigher current handling and lower conduction loss; requires larger gate drive due to 75 nC QgSelect when system efficiency at full load >92% is required and gate drive capability supports higher Qg
FQP9N70700 V, 1.4 Ω max RDS(on), 9 A ID, TO-220 (non-isolated) packageNo internal insulation; requires external isolating pad for heatsink mounting; lower dv/dt rating (3.5 V/ns)Choose only in non-isolated or Class II designs where creepage/clearance permits direct heatsink contact

Compared with STP10NK70ZFP and FQP9N70, STP9NK70ZFP offers optimal balance of avalanche ruggedness, gate drive simplicity, and reinforced insulation - making it preferred for Class I industrial SMPS where reliability under surge and thermal stress is prioritized over marginal conduction loss reduction.

Availability

STP9NK70ZFP is available at Aetrix Electronics and suitable for LED streetlight drivers, industrial AC-DC adapters, electronic ballasts, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for STP9NK70ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The SuperMESH Power MOSFET product line targets high-reliability offline power conversion, emphasizing avalanche ruggedness, high-voltage stability, and reduced gate charge for improved switching efficiency in SMPS, lighting, and motor control.

FAQ

What is the maximum safe operating temperature for STP9NK70ZFP?

The junction temperature must not exceed 150 °C under continuous operation. With RthJC = 3.6 °C/W, a case temperature of 100 °C corresponds to 13.9 W dissipation - limiting continuous 7.5 A operation to derated duty cycles unless heatsink thermal resistance is ≤ 1.2 °C/W.

Does STP9NK70ZFP require external gate protection?

No external gate Zener is required: the device integrates bidirectional gate protection rated for ±30 V, validated per human-body-model ESD testing (4 kV). However, a 10–22 Ω series gate resistor remains recommended to dampen ringing and limit peak gate current during fast switching.

Can STP9NK70ZFP replace STP9NK70Z in existing designs?

Yes - STP9NK70ZFP is the insulated-package variant of STP9NK70Z (TO-220 non-FP). The FP version adds 2.5 kV RMS isolation and identical electrical specs; mechanical mounting differs due to insulated tab, requiring verification of heatsink clearance and torque specifications per ST's AN4101 guidelines.

What is the typical reverse recovery behavior of the body diode?

At TJ = 150 °C, the body diode exhibits trr = 570 ns and Qrr = 5.2 µC under ISD = 8 A, di/dt = 100 A/µs. This soft recovery characteristic reduces EMI and voltage overshoot in flyback snubberless designs compared to standard MOSFETs with abrupt diode turn-off.

STP9NK70Z Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
115W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP9NK70Z FAQ

1.How can I place an order for STP9NK70Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP9NK70Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP9NK70Z reliable?

The price and inventory of STP9NK70Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP9NK70Z is usually 5 days.

3.What payment methods are accepted for STP9NK70Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP9NK70Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP9NK70Z?

STP9NK70Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP9NK70Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP9NK70Z?

For technical support, including STP9NK70Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP9NK70Z requirements.

6.How does Aetrix verify that STP9NK70Z is sourced from the original manufacturer or authorized distributors?

All STP9NK70Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP9NK70Z meets industry standards.

7.What is the process for return or replacement of STP9NK70Z?

All STP9NK70Z units undergo pre-shipment inspection (PSI). If there is an issue with STP9NK70Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP9NK70Z part is unused and in its original packaging.

Return procedure for STP9NK70Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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