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STMicroelectronics STRVS222X02F
- Part No.:
- STRVS222X02F
- Manufacturer:
- STMicroelectronics
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
STRVS222X02F.pdf
- Description:
- TVS DIODE 154VWM 222VC DO201
- Quantity:
- Payment:
- Shipping:
Inventory:2,355
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Product details
Overview
STRVS222X02F from STMicroelectronics is a unidirectional repetitive voltage suppressor (TVS) designed for transient overvoltage protection of power semiconductors in high-frequency switching circuits. It features a 222 V clamping voltage at 2 A peak pulse current, 189 V maximum breakdown voltage at 125 °C, 4.5 Ω dynamic resistance, and DO-201 axial package with 175 °C max junction temperature - deployed in flyback auxiliary power supply MOSFET protection.
For engineers reviewing the STRVS222X02F datasheet, STRVS222X02F pinout, STRVS222X02F application, or STRVS222X02F equivalent, key selection criteria include clamping voltage stability across temperature (–55 to +175 °C), low leakage (1 µA @ VRM, 25 °C), IEC 61000-4-2/4-5 level 4 compliance, and thermal resistance (Rth(j-a) = 100 °C/W on recommended PCB layout).
Technical Context
The STRVS222X02F operates as a silicon avalanche diode with defined clamping behavior under repetitive surge conditions (e.g., flyback snubber ringing), where thermal accumulation necessitates high junction temperature capability (up to 175 °C for DO-201). Its voltage-temperature coefficient αT = 10.8 × 10⁻⁴ /°C enables predictable VBR drift across operating range.
It delivers stable clamping performance at IPP = 2 A with VCL = 222 V (125 °C) and VCL0 = 213 V, supported by low dynamic resistance (4.5 Ω) and tight breakdown voltage tolerance (154–189 V at 25–125 °C). The device meets MIL-STD-883 HBM (25 kV) and IEC 61000-4-5 level 4 surge immunity requirements without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Clamping Voltage | 222 V @ IPP = 2 A, 125 °C - ensures safe MOSFET VDS margin during repeated surges in flyback snubbers |
| Breakdown Voltage Range | 154–189 V (25–125 °C) - guarantees turn-on before protected device failure across full thermal range |
| Leakage Current | 1 µA @ VRM = 189 V, 25 °C - minimizes standby power loss in auxiliary supplies |
| Dynamic Resistance | 4.5 Ω - maintains low clamping overshoot under fast-rising transients (e.g., ESD, inductive kick) |
| Junction Temperature Max | 175 °C (DO-201) - supports continuous operation in thermally stressed power stage environments |
| Surge Standards | IEC 61000-4-2 level 4 (±15 kV air / ±8 kV contact); IEC 61000-4-5 level 4 - validated for industrial EMC robustness |
| Thermal Resistance | Rth(j-a) = 100 °C/W (on recommended pad layout) - enables accurate junction temperature estimation for lifetime modeling |
Pinout & Package
STRVS222X02F uses a DO-201 axial leaded package with cathode indicated by a band. Leads are solder-plated and compliant with MIL-STD-750 method 2026. Polarity is unidirectional; the cathode terminal connects to the protected circuit's higher-potential node (e.g., MOSFET drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or source return path; defines conduction direction during overvoltage events |
| Cathode (banded end) | Protected node connection | Directly tied to MOSFET drain or IGBT collector; clamps voltage rise above VCL when avalanche triggered |
Key Features
| Feature | Design Value |
|---|---|
| Triple-temperature clamping spec | Clamping voltage defined at 25 °C, 85 °C, and 125 °C - eliminates thermal derating guesswork in design validation |
| High-temperature junction rating | 175 °C max Tj (DO-201) - sustains reliability in enclosed power supplies with limited airflow |
| Low dynamic resistance | 4.5 Ω - reduces clamping overshoot by >15% vs. comparable TVS diodes with Rd > 6 Ω |
| HBM ESD robustness | 25 kV per MIL-STD-883 method 3015, class 3B - protects against handling-induced failures pre-soldering |
| Lead-free & RoHS-compliant | ECOPACK®-qualified DO-201 package - meets global environmental compliance without solderability trade-offs |
Applications
| Switch-Mode Power Supply Snubbers | MOSFET Drain Protection |
|---|---|
Use Scenario: Flyback converter auxiliary winding rectifier circuit exposed to repetitive voltage spikes from transformer leakage inductance. IC Role / Device Role / Timing Role: Unidirectional TVS placed across auxiliary rectifier diode to clamp ringing and limit peak reverse voltage. Use Value: Prevents auxiliary diode breakdown and capacitor degradation by limiting VRRM excursions to ≤222 V at 2 A surge, even at 125 °C ambient. |
Use Scenario: High-side N-channel MOSFET in DC-DC controller IC driving inductive load with fast switching edges. IC Role / Device Role / Timing Role: TVS connected between MOSFET drain and source to absorb inductive turn-off energy and suppress VDS overshoot. Use Value: Maintains VDS < 222 V during 2 A transient events, preserving SOA margin and enabling use of lower-VDS-rated MOSFETs. |
| IGBT Gate Driver Protection | Industrial AC Input Surge Suppression |
Use Scenario: Isolated gate driver output feeding IGBT gate in motor drive half-bridge, subject to Miller-induced dv/dt coupling. IC Role / Device Role / Timing Role: TVS placed between gate and emitter to clamp unintended gate voltage excursions during shoot-through or noise coupling. Use Value: Limits gate voltage to safe levels (<222 V) during fast transients, preventing false turn-on and gate oxide stress. |
Use Scenario: AC input stage of industrial PLC power module subjected to line-to-line surges per IEC 61000-4-5 level 4. IC Role / Device Role / Timing Role: Primary clamping device across bridge rectifier input to divert surge current away from downstream components. Use Value: Absorbs 2 A surge current with 222 V clamping, protecting rectifier diodes and bulk capacitor from overvoltage failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar repetitive voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STRVS225X02E | DO-15 package; 225 V clamping; 5.5 Ω Rd; 150 °C max Tj | Lower thermal capability and higher dynamic resistance - suitable only for lower-power, lower-duty-cycle designs | Select when board space allows larger DO-15 footprint and junction temperature remains below 150 °C |
| STRVS252X02F | 252 V clamping; same DO-201 package; 6.5 Ω Rd; identical 175 °C Tj rating | Higher clamping voltage - requires re-evaluation of protected device SOA but offers tighter VBR tolerance | Choose when system overvoltage margin permits higher clamping and improved VBR consistency is prioritized |
Compared with STRVS222X02F, STRVS225X02E trades thermal headroom and clamping precision for legacy through-hole compatibility, while STRVS252X02F increases clamping margin at the cost of reduced transient suppression efficacy - making STRVS222X02F optimal for thermally demanding, high-repetition-rate MOSFET protection.
Availability
STRVS222X02F is available at Aetrix Electronics and suitable for flyback snubber networks, MOSFET drain clamping, and industrial AC input surge protection requiring stable component supply and long-term manufacturability.
Supply support for STRVS222X02F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.
The STRVSX series was developed specifically for repetitive overvoltage protection in power conversion topologies where thermal cycling degrades conventional TVS devices - targeting flyback, resonant, and LLC converter auxiliary and primary-side protection.
FAQ
What is the maximum allowable peak pulse current for STRVS222X02F?
The device is characterized and rated for 2 A peak pulse current (IPP) per IEC 61000-4-5 testing conditions. Its clamping voltage (222 V) and dynamic resistance (4.5 Ω) are specified at this current level. Exceeding 2 A may cause irreversible thermal runaway due to insufficient heat dissipation in the DO-201 package under repetitive duty cycles.
Does STRVS222X02F require derating at elevated ambient temperatures?
Yes - its clamping voltage increases with junction temperature (αT = 10.8 × 10⁻⁴ /°C), and maximum IPP must be reduced above 85 °C ambient to maintain Rth(j-a) = 100 °C/W and avoid exceeding 175 °C Tj. Derating curves are provided in Figure 6 of the datasheet for precise thermal design.
Can STRVS222X02F replace standard unidirectional TVS diodes like SMAJ220A?
No - STRVS222X02F is optimized for repetitive surges (e.g., flyback ringing), not single-event ESD. SMAJ220A has higher IPP (23.9 A) but undefined clamping behavior beyond 25 °C and no 125/175 °C thermal specs. STRVS222X02F's low Rd and triple-temperature characterization make it unsuitable as a drop-in replacement for general-purpose TVS diodes.
Is the DO-201 package of STRVS222X02F compatible with automated through-hole assembly?
Yes - the DO-201 package features solder-plated leads compliant with MIL-STD-750 method 2026 and is qualified for wave and selective soldering at 260 °C for 10 s. Its 0.90 g weight and axial lead geometry support standard tape-and-ammopack feeding and placement in high-volume through-hole lines.
STRVS222X02F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- STRVS
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 154V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 222V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- MOSFET Protection
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-201
STRVS222X02F FAQ
1.How can I place an order for STRVS222X02F through Aetrix?
Please submit a Request for Quotation (RFQ) for STRVS222X02F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STRVS222X02F reliable?
The price and inventory of STRVS222X02F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STRVS222X02F is usually 5 days.
3.What payment methods are accepted for STRVS222X02F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STRVS222X02F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STRVS222X02F?
STRVS222X02F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STRVS222X02F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STRVS222X02F?
For technical support, including STRVS222X02F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STRVS222X02F requirements.
6.How does Aetrix verify that STRVS222X02F is sourced from the original manufacturer or authorized distributors?
All STRVS222X02F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STRVS222X02F meets industry standards.
7.What is the process for return or replacement of STRVS222X02F?
All STRVS222X02F units undergo pre-shipment inspection (PSI). If there is an issue with STRVS222X02F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STRVS222X02F part is unused and in its original packaging.
Return procedure for STRVS222X02F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STRVS222X02F Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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