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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS19N3LLH6

Name: STS19N3LLH6
Brand: STMicroelectronics
SKU: STS19N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS19N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS19N3LLH6.pdf

Description:: MOSFET N-CH 30V 19A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS19N3LLH6 from STMicroelectronics is an N-channel 30 V, 19 A Power MOSFET in SO-8 package featuring 4.9 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and high avalanche ruggedness. It serves as a low-loss main or synchronous rectifier switch in DC-DC converters, motor drivers, and load switches operating up to 100 °C case temperature.

For engineers reviewing the STS19N3LLH6 datasheet, STS19N3LLH6 pinout, STS19N3LLH6 application, or STS19N3LLH6 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage (4.5 V/10 V), pulsed current capability (76 A), thermal resistance (47 °C/W on FR-4), and SO-8 footprint compatibility with existing board layouts.

Technical Context

This MOSFET implements ST's STripFET™ VI DeepGATE™ architecture, combining optimized cell pitch and a reinforced gate structure to minimize R_DS(on) × Q_g figure-of-merit. Its 1690 pF input capacitance and 290 pF reverse transfer capacitance support fast switching at 4.5 V logic-level drive.

The device integrates a robust intrinsic body diode with 14 ns reverse recovery time and 16.8 nC Q_rr at 150 °C junction temperature, enabling efficient hard-switched and synchronous rectification topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12–24 V system rails
R_DS(on) @ 10 V	4.9 mΩ - Enables ≤1.8 W conduction loss at 19 A continuous current
Q_g	17 nC - Low gate drive energy supports 1 MHz+ switching with <1 W driver loss
I_D (T_C=100°C)	11.8 A - Sustained current rating under thermally constrained PCB conditions
t_r/t_f	9.5 ns / 12 ns - Fast edge rates reduce switching transition losses in buck/boost stages
Q_rr	16.8 nC - Predictable diode recovery behavior enables reliable synchronous FET timing control
R_thj-amb	47 °C/W - Thermal performance measured on 1 in² FR-4 board, 2 oz Cu, defines heatsink-free power ceiling

Pinout & Package

STS19N3LLH6 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant) with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AC outline.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled terminals connected to exposed thermal pad - primary current path and heat sink interface
6	Source (S)	Low-side return node; referenced for gate drive and current sensing
G	Gate (G)	Control terminal requiring ≤±20 V bias; 1.7 Ω gate resistance limits ringing during fast transitions

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	83 mΩ·nC - Industry-leading conduction–switching trade-off for 30 V logic-level MOSFETs
High avalanche ruggedness	Unclamped inductive switching rated per JEDEC JESD22-A109 - supports robust overvoltage transient handling
Low gate drive power loss	Q_g = 17 nC at V_DD = 15 V enables <0.5 W average gate drive power at 500 kHz
DeepGATE™ gate structure	Reduces gate-to-drain coupling (Crss = 290 pF), improving Miller immunity in high-dV/dt environments
SO-8 thermal pad	Exposed drain pad provides direct thermal path to PCB copper - critical for maintaining T_J < 150 °C at full load

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V input to 3.3/5/12 V output step-down converter in industrial PLC I/O modules.

IC Role / Device Role: Synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 4.9 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling >95% peak efficiency at 10 A output.

Use Scenario: H-bridge driver for 24 V, 10 A brushed motors in automated gate actuators and HVAC dampers.

IC Role / Device Role: Low-side switch controlling motor direction and PWM speed regulation.

Use Value: 76 A pulsed current rating handles 6× stall current surges; 14 ns t_rr prevents shoot-through during bridge commutation.

Hot-Swap Controller

Load Switch for Server PSU Rails

Use Scenario: Inrush-limited 12 V hot-swap circuit protecting backplane slots in telecom line cards.

IC Role / Device Role: Main pass element with external gate driver managing controlled turn-on slew rate.

Use Value: 11.8 A continuous rating at 100 °C case ensures stable operation during sustained 10 A loads; low Q_g enables precise dV/dt control.

Use Scenario: OR-ing and sequencing switch for redundant 12 V server power supply outputs.

IC Role / Device Role: Back-to-back configured N-channel MOSFET providing bidirectional blocking and low-loss conduction.

Use Value: 30 V V_DS withstands 12 V rail transients; 4.9 mΩ R_DS(on) limits voltage drop to <60 mV at 12 A, minimizing bus droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 5.5 mΩ @ 4.5 V; Q_g = 11.5 nC; SO-8 package	Lower gate charge improves 4.5 V drive efficiency but higher R_DS(on) increases conduction loss above 8 A	Prefer when gate drive is strictly 3.3–4.5 V and peak current ≤8 A
DMN3028LSD-13	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 22 nC; SO-8 package with dual die	Lower R_DS(on) reduces conduction loss but higher Q_g demands stronger gate driver and increases switching loss	Prefer when thermal margin is tight and gate drive can support ≥2 A peak current

Compared with IRLML6344TRPBF and DMN3028LSD-13, STS19N3LLH6 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche capability-making it preferred for 12–24 V systems requiring reliability under overload and transient stress.

Availability

STS19N3LLH6 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and server load switches requiring stable component supply across industrial, telecom, and embedded computing programs.

Supply support for STS19N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STS19N3LLH6 belongs to ST's STripFET™ VI DeepGATE™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained 12–24 V power conversion and motor control applications.

FAQ

Is STS19N3LLH6 suitable for 3.3 V logic-level gate drive?

No. While STS19N3LLH6 specifies R_DS(on) = 6.6 mΩ at V_GS = 4.5 V, its gate threshold voltage (V_GS(th)) ranges from 1.0 to 2.5 V, and full enhancement requires ≥4.5 V for acceptable conduction loss. Driving from 3.3 V results in R_DS(on) >15 mΩ and excessive heating at >5 A. Use only with 4.5 V or higher gate drive.

What is the maximum safe operating area (SOA) for single-pulse unclamped inductive switching?

The SOA curve (Figure 2) confirms 76 A pulsed drain current is sustainable for ≤10 µs at V_DS = 30 V and T_J = 25 °C. At 100 °C junction temperature, the limit drops to ~45 A for the same pulse width. Derating is required for repetitive pulses or elevated ambient temperatures per Figure 2's logarithmic boundaries.

Does STS19N3LLH6 have integrated ESD protection on the gate?

Yes. The gate oxide is protected by internal Zener clamping, evidenced by ±100 nA gate leakage (I_GSS) at ±20 V and no gate rupture observed up to the absolute maximum V_GS rating of ±20 V. However, external gate resistors (≥10 Ω) and TVS diodes are still recommended in high-noise environments per ST application note AN4107.

Can STS19N3LLH6 be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive temperature coefficient of R_DS(on) (Figure 11) enables current sharing, yet mismatched gate loop inductance or trace resistance causes dynamic imbalance. ST recommends individual 10 Ω gate resistors, symmetrical PCB routing, and Kelvin source connections to ensure balanced turn-on/turn-off across paralleled units.

STS19N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 15 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS19N3LLH6 FAQ

1.How can I place an order for STS19N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS19N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS19N3LLH6 reliable?

The price and inventory of STS19N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS19N3LLH6 is usually 5 days.

3.What payment methods are accepted for STS19N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS19N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS19N3LLH6?

STS19N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS19N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS19N3LLH6?

For technical support, including STS19N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS19N3LLH6 requirements.

6.How does Aetrix verify that STS19N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STS19N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS19N3LLH6 meets industry standards.

7.What is the process for return or replacement of STS19N3LLH6?

All STS19N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STS19N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS19N3LLH6 part is unused and in its original packaging.

Return procedure for STS19N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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