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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS2DPFS20V

Name: STS2DPFS20V
Brand: STMicroelectronics
SKU: STS2DPFS20V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS2DPFS20V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS2DPFS20V.pdf

Description:: MOSFET P-CH 20V 2.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,249

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Product details

Overview

STS2DPFS20V from STMicroelectronics is a P-channel 20 V, 2.5 A StripFET™ II MOSFET integrated with a co-packaged Schottky diode in SO-8 package, optimized for low-voltage DC-DC converters in portable electronics. It delivers R_DS(on) ≤ 0.14 Ω at V_GS = 4.5 V and ≤ 0.20 Ω at V_GS = 2.7 V, enabling efficient synchronous rectification and load switching in space-constrained battery-powered systems.

For engineers reviewing the STS2DPFS20V datasheet, STS2DPFS20V pinout, STS2DPFS20V application, or STS2DPFS20V equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), 2.7 V gate drive compatibility, 30 V Schottky reverse voltage rating, thermal resistance of 62.5 °C/W (FR-4, 1 in²), and unclamped inductive switching capability per Figure 1 test circuit.

Technical Context

This device implements a monolithic P-channel MOSFET paired with an independent low-drop Schottky diode in a single SO-8 package - not a common-source/drain integrated structure. The MOSFET features enhanced transconductance (g_fs = 4 S) and fast switching (t_d(on) = 38 ns, t_d(off) = 45 ns) with gate charge Q_g = 3.5–4.7 nC at V_GS = 4.5 V.

The Schottky diode provides 3 A average forward current (I_F(AV)) at T_L = 125 °C, 0.51 V max forward voltage at 3 A/125 °C, and ultra-fast reverse recovery (t_rr = 15 ns, Q_rr = 7.5 nC) under 100 A/µs di/dt - critical for high-frequency buck converter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage for low-voltage rail switching
R_DS(on) @ 4.5 V	≤ 0.14 Ω - Enables <100 mW conduction loss at 2.5 A continuous current
R_DS(on) @ 2.7 V	≤ 0.20 Ω - Supports direct logic-level drive from 2.7 V microcontrollers or PMICs
I_D (continuous)	2.5 A @ T_C = 25 °C - Rated for sustained load switching in compact thermal layouts
V_F (Schottky)	0.51 V max @ 3 A / 125 °C - Minimizes freewheeling losses and heat generation in DC-DC stages
t_rr (diode)	15 ns - Reduces switching node ringing and EMI in >500 kHz converters
R_thj-amb	62.5 °C/W - Thermal performance measured on 1 in² FR-4 board, 2 oz Cu - defines heatsinking requirements

Pinout & Package

SO-8 package (standard small-outline 8-lead, 1.27 mm pitch), with exposed drain pad thermally connected to pins 1, 2, 3, 4 and 8. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Drain, Pin 4 is Drain, Pin 5 is Drain, Pin 6 is Drain, Pin 7 is Drain, Pin 8 is Drain - all drains internally tied to the exposed thermal pad for low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control input for MOSFET turn-on/off; requires 2.7–12 V drive relative to source
Pins 2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in high-side switch config
Pins 3–8 (D)	Drain / Cathode	Shared terminal: MOSFET drain and Schottky cathode - connects to input rail in buck topologies
Exposed Pad	Drain / Thermal Sink	Electrically and thermally connected to all drain pins - must be soldered to PCB copper for thermal and electrical integrity

Key Features

Feature	Design Value
Integrated Schottky diode	Eliminates external diode placement and layout parasitics in synchronous buck freewheeling paths
2.7 V gate drive capability	Enables direct interface with low-voltage I/O domains (e.g., 2.7 V PMIC outputs or battery monitors)
Low R_DS(on) at 4.5 V	Reduces conduction loss by >30% vs. comparable 20 V P-MOSFETs, improving efficiency in 3.3 V/5 V output rails
Fast reverse recovery (15 ns)	Minimizes dead-time losses and shoot-through risk during synchronous rectification transitions
SO-8 with exposed drain pad	Provides 2× thermal conductivity vs. standard SO-8 - supports 2.5 A continuous operation without heatsink

Applications

Portable USB-C Power Delivery

Printer Motor Driver Stage

Use Scenario: Input-side protection and reverse-polarity blocking in 5–20 V USB-C PD sink circuits.

IC Role / Device Role: P-channel high-side switch with integrated Schottky for clamp and flyback energy handling.

Use Value: Eliminates need for discrete TVS + Schottky + MOSFET combo, reducing BOM count by 3 components and PCB area by 25 mm².

Use Scenario: H-bridge half-bridge leg in stepper motor driver for inkjet printers.

IC Role / Device Role: Low-side synchronous rectifier with body-diode replacement function during PWM off-time.

Use Value: 0.51 V Schottky VF cuts freewheeling loss by 40% vs. silicon body diode, reducing coil heating and audible noise.

Cellular Phone Battery Charger IC

Industrial Handheld Scanner Power Rail

Use Scenario: Load switch between battery and charging IC in dual-battery backup systems.

IC Role / Device Role: Controlled power path switch with integrated reverse-current blocking diode.

Use Value: 0.20 Ω R_DS(on) at 2.7 V enables direct control from charger's LDO output, avoiding level-shifter complexity.

Use Scenario: 3.3 V/5 V step-down regulator output stage in barcode scanner with 200 ms wake-up bursts.

IC Role / Device Role: Synchronous rectifier in 1.2 MHz buck converter powering image sensor and laser diode.

Use Value: 15 ns t_rr prevents voltage overshoot during 10 A transient loads, maintaining ±2% output regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET + Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	20 V P-MOSFET only (no integrated Schottky); R_DS(on) = 0.025 Ω @ 4.5 V but requires external diode	Higher efficiency possible with optimized external Schottky, but adds layout complexity and BOM cost	Preferred when peak efficiency >95% is required and board space allows separate diode placement
DMN2020LSD-13	20 V P-MOSFET + Schottky in SO-8; R_DS(on) = 0.19 Ω @ 4.5 V; Schottky V_F = 0.55 V @ 3 A	Slightly higher conduction loss and forward drop; same pinout and thermal footprint	Drop-in replacement where STS2DPFS20V is unavailable; verify thermal margin due to +0.05 Ω R_DS(on)

Compared with Si7851DP-T1-GE3 and DMN2020LSD-13, STS2DPFS20V uniquely balances low gate-threshold drive (2.7 V), integrated Schottky with best-in-class 0.51 V V_F, and proven robustness in unclamped inductive switching - making it optimal for cost-sensitive, space-constrained portable DC-DC designs.

Availability

STS2DPFS20V is available at Aetrix Electronics and suitable for portable USB-C power delivery, printer motor drivers, cellular phone battery chargers, and industrial handheld scanner power rails requiring stable component supply and long-term design-in support.

Supply support for STS2DPFS20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STS2DPFS20V belongs to ST's StripFET™ II power MOSFET family, engineered specifically for high-efficiency, low-voltage DC-DC conversion in battery-powered equipment where gate drive voltage headroom is limited.

FAQ

What is the maximum safe operating junction temperature for STS2DPFS20V?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in the "Thermal Data" section. Operation above this limit risks permanent degradation of both MOSFET channel and Schottky junction characteristics. Derating is required above 25 °C ambient - full 2.5 A current is only rated at T_C = 25 °C; at T_C = 100 °C, continuous current drops to 1.58 A.

Can STS2DPFS20V be used in high-side switch configuration with 5 V gate drive?

Yes - the device supports V_GS up to ±12 V, and its gate threshold voltage (V_GS(th)) is 0.6 V typical. With 5 V applied between gate and source, it fully enhances with R_DS(on) ≤ 0.14 Ω, delivering minimal conduction loss. Ensure source node is referenced correctly: in high-side use, source connects to load, drain to supply, and gate driven relative to source.

Is the Schottky diode electrically isolated from the MOSFET substrate?

No - the Schottky diode shares the same die substrate as the MOSFET and is connected anode-to-source and cathode-to-drain. Its cathode is tied to all drain pins and the exposed thermal pad. This configuration enables true synchronous rectification in buck converters but prohibits use as a standalone diode with independent biasing.

Does STS2DPFS20V support unclamped inductive switching, and what is the test condition?

Yes - the datasheet explicitly specifies unclamped inductive switching capability per Figure 1 test circuit. Under those conditions (L = 0.5 mH, I_AS = 2 A, V_DD = 10 V), the device sustains avalanche energy without failure. This makes it suitable for relay driving, solenoid control, and flyback snubbing where inductive kickback occurs without external clamping.

STS2DPFS20V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4.7 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS2DPFS20V FAQ

1.How can I place an order for STS2DPFS20V through Aetrix?

Please submit a Request for Quotation (RFQ) for STS2DPFS20V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS2DPFS20V reliable?

The price and inventory of STS2DPFS20V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS2DPFS20V is usually 5 days.

3.What payment methods are accepted for STS2DPFS20V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS2DPFS20V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS2DPFS20V?

STS2DPFS20V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS2DPFS20V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS2DPFS20V?

For technical support, including STS2DPFS20V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS2DPFS20V requirements.

6.How does Aetrix verify that STS2DPFS20V is sourced from the original manufacturer or authorized distributors?

All STS2DPFS20V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS2DPFS20V meets industry standards.

7.What is the process for return or replacement of STS2DPFS20V?

All STS2DPFS20V units undergo pre-shipment inspection (PSI). If there is an issue with STS2DPFS20V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS2DPFS20V part is unused and in its original packaging.

Return procedure for STS2DPFS20V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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