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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS6PF30L

Name: STS6PF30L
Brand: STMicroelectronics
SKU: STS6PF30L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS6PF30L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS6PF30L.pdf

Description:: MOSFET P-CH 30V 6A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS6PF30L from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SO-8 package, rated for 30 V V_DS, 6 A continuous drain current at T_C = 25°C, R_DS(on) = 0.027 Ω at V_GS = 10 V, and optimized for low-threshold gate drive (V_GS(th) = 1.6 V typ). It serves as a high-efficiency synchronous rectifier or load switch in battery-powered DC-DC converters.

For engineers reviewing the STS6PF30L datasheet, STS6PF30L pinout, STS6PF30L application, or STS6PF30L equivalent, key selection criteria include its P-channel polarity, 30 V breakdown rating, sub-30 mΩ on-resistance at 5 V gate drive, rugged body diode with 37 ns reverse recovery time, and SO-8 thermal performance enabling compact mobile power designs.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size geometry, delivering high cell density and tight parameter distribution. Its P-channel architecture enables high-side switching without level-shifting circuitry, and the integrated source-drain diode supports bidirectional current flow in buck converter synchronous rectification.

The device features guaranteed avalanche energy rating (not quantified in provided data), 16 V gate-source voltage tolerance, and thermal resistance R_thj-amb = 50 °C/W - critical for thermally constrained handheld applications where PCB copper area is limited and forced airflow is absent.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage; suitable for 24 V nominal input rails with margin against transients
R_DS(on) @ V_GS = 10 V	0.027 Ω - enables <160 mW conduction loss at 6 A, reducing thermal stress in SO-8 footprint
R_DS(on) @ V_GS = 5 V	0.034 Ω - supports logic-level drive from 5 V microcontrollers without gate driver
I_D (cont) @ T_C = 25°C	6 A - continuous current capability under ideal heatsinking; derates to 3.8 A at 100°C case temperature
V_GS(th)	1.6 V (typ) - ensures turn-on with standard 3.3 V or 5 V logic outputs
Q_g	21 nC - total gate charge determines switching loss and required driver strength in high-frequency DC-DC stages
V_SD	1.2 V @ I_SD = 6 A - forward voltage of intrinsic body diode; impacts dead-time losses in synchronous buck operation

Pinout & Package

STS6PF30L is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal dissipation. Pin 1 is Gate, Pins 2–4 and 5–7 are Source (common), and Pin 8 is Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 0–16 V logic-compatible drive; requires no negative bias for full turn-off
Pins 2, 3, 4, 5, 6, 7	Source	Common source node; electrically tied internally; provides return path for load current and gate drive reference
Pin 8	Drain	Main power output terminal; connected to exposed copper pad for thermal conduction to PCB ground plane

Key Features

Feature	Design Value
Low R_DS(on) at 5 V drive	0.034 Ω - eliminates need for external gate driver in 3.3/5 V control systems
Rugged body diode	t_rr = 37 ns, Q_rr = 46.3 nC - minimizes commutation loss and EMI in hard-switched topologies
High avalanche ruggedness	Guaranteed unclamped inductive switching (UIS) per ST's process qualification - supports reliable operation under load dump or inductive kick
SO-8 standard outline	Compatible with automated pick-and-place and reflow processes; enables drop-in replacement in legacy designs

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs for smartphones and tablets.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch with controlled gate turn-on to prevent battery discharge into faulty loads.

Use Value: 1.6 V threshold enables direct MCU GPIO control; 0.027 Ω R_DS(on) limits voltage drop to <160 mV at 6 A, preserving battery runtime.

Use Scenario: Hot-swap power path management between USB-C port and system rail in portable accessories.

IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V input with fast turn-on/turn-off (<200 ns) and minimal inrush.

Use Value: Low Q_g (21 nC) allows clean switching with 10 kΩ gate resistor; SO-8 layout simplifies ESD protection integration.

DC-DC Synchronous Rectifier

Motor Driver Half-Bridge High-Side

Use Scenario: Secondary-side rectification in 30 V input buck converters for industrial sensors and wearables.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: Body diode V_SD = 1.2 V and t_rr = 37 ns enable precise timing alignment with controller; R_DS(on) cuts losses by >60% vs. 40 V Schottky.

Use Scenario: High-side switch in 12–24 V brushed DC motor drivers for robotics and medical pumps.

IC Role / Device Role / Timing Role: P-channel MOSFET driven directly by microcontroller PWM, eliminating bootstrap complexity.

Use Value: 30 V V_DS rating accommodates motor back-EMF spikes; 6 A ID supports 5 W mechanical output with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7410PbF	R_DS(on) = 0.032 Ω @ 10 V; V_GS(th) = 1.0–2.0 V; Q_g = 24 nC	Slightly higher gate charge increases switching loss at >500 kHz; identical SO-8 footprint	Preferred when tighter V_GS(th) distribution is needed for low-voltage logic compatibility
DMG6968U	R_DS(on) = 0.025 Ω @ 4.5 V; V_DS = 20 V; SO-8 with enhanced thermal pad	Lower voltage rating restricts use to ≤12 V systems; superior R_DS(on) at 3.3 V drive	Select for 3.3 V MCU-driven 5–12 V applications where 30 V margin is unnecessary

Compared with IRF7410PbF and DMG6968U, STS6PF30L offers optimal balance of 30 V robustness, 5 V logic compatibility, and SO-8 thermal performance - making it uniquely suited for 24 V nominals in space-constrained mobile power systems.

Availability

STS6PF30L is available at Aetrix Electronics and suitable for battery management in nomadic equipment, DC-DC converters in portable instrumentation, and mobile phone power subsystems requiring stable component supply across multi-year production cycles.

Supply support for STS6PF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The STS6PF30L belongs to ST's StripFET™ II power MOSFET family, engineered specifically for high-density, low-R_DS(on) switching in battery-powered and thermally constrained applications.

FAQ

What is the maximum safe operating junction temperature for STS6PF30L?

The absolute maximum junction temperature is 150°C, as specified in the Thermal Data section. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves show R_DS(on) increases ~0.5%/°C above 25°C, so thermal design must maintain T_j ≤ 135°C under worst-case ambient and power dissipation.

Can STS6PF30L be used in linear (analog) regulation mode?

No - STS6PF30L is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) graph is omitted from the provided datasheet, and continuous linear use would exceed its 2.5 W P_tot rating at T_C = 25°C due to localized heating and thermal runaway risk.

Does STS6PF30L require a gate resistor for stability?

Yes - a series gate resistor (typically 10–100 Ω) is recommended to dampen parasitic oscillation during switching transitions. The datasheet's switching test circuits (Fig. 1–2) use R_G = 4.7 Ω; omitting it may cause ringing, increased EMI, and accelerated gate oxide stress.

Is the SO-8 package lead-free and RoHS compliant?

Yes - STS6PF30L is manufactured in accordance with RoHS Directive 2011/65/EU. The "PbF" suffix in alternate part numbers (e.g., IRF7410PbF) confirms lead-free finish; ST's official product status documentation lists STS6PF30L as fully RoHS-compliant with matte tin plating.

STS6PF30L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS6PF30L FAQ

1.How can I place an order for STS6PF30L through Aetrix?

Please submit a Request for Quotation (RFQ) for STS6PF30L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS6PF30L reliable?

The price and inventory of STS6PF30L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS6PF30L is usually 5 days.

3.What payment methods are accepted for STS6PF30L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS6PF30L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS6PF30L?

STS6PF30L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS6PF30L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS6PF30L?

For technical support, including STS6PF30L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS6PF30L requirements.

6.How does Aetrix verify that STS6PF30L is sourced from the original manufacturer or authorized distributors?

All STS6PF30L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS6PF30L meets industry standards.

7.What is the process for return or replacement of STS6PF30L?

All STS6PF30L units undergo pre-shipment inspection (PSI). If there is an issue with STS6PF30L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS6PF30L part is unused and in its original packaging.

Return procedure for STS6PF30L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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