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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STSJ25NF3LL

Name: STSJ25NF3LL
Brand: STMicroelectronics
SKU: STSJ25NF3LL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STSJ25NF3LL

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Datasheet:: STSJ25NF3LL.pdf

Description:: MOSFET N-CH 30V 25A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STSJ25NF3LL from STMicroelectronics is an N-channel 30 V, 25 A PowerSO-8™ MOSFET with R_DS(on) = 0.0085 Ω @ 10 V, Q_g = 24 nC @ 4.5 V, and R_thj-c = 1.8 °C/W - optimized for high-efficiency CPU core DC/DC converters in mobile PCS platforms.

For engineers reviewing the STSJ25NF3LL datasheet, STSJ25NF3LL pinout, STSJ25NF3LL application, or STSJ25NF3LL equivalent, key selection criteria include low conduction loss (R_DS(on) < 0.0105 Ω), reduced switching loss (Q_g = 24 nC), thermal performance (R_thj-c = 1.8 °C/W), and PowerSO-8™ package compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs ST's StripFET™ II process with Single Feature Size™ silicon architecture, delivering a calibrated trade-off between on-resistance and gate charge. Its thermally enhanced PowerSO-8™ package features drain contact on the backside to minimize junction-to-case thermal resistance.

The device supports fast switching (t_d(on) = 23 ns, t_r = 156 ns) and robust safe operating area (IDM = 100 A pulsed), with integrated body diode characterized for reverse recovery (t_rr = 40 ns, Q_rr = 50 nC) under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage compatible with 3.3 V–12 V input DC/DC stages
R_DS(on)	0.0085 Ω @ V_GS = 10 V - enables <100 mW conduction loss at 12.5 A continuous current
Q_g	24 nC @ V_GS = 4.5 V - reduces gate drive power and enables efficient operation with low-voltage PWM controllers
I_D	25 A @ T_C = 25°C - supports high-current CPU core rails with appropriate heatsinking
R_thj-c	1.8 °C/W - allows direct thermal coupling to PCB copper or heatsink, critical for mobile thermal budgets
t_r/t_f	156 ns / 28 ns - enables MHz-range switching while maintaining EMI control in compact converters
V_SD	1.2 V @ I_SD = 25 A - defines forward voltage drop of integrated body diode during synchronous rectification or freewheeling

Pinout & Package

Package: PowerSO-8™ - thermally enhanced SO-8 variant with exposed drain pad on underside for direct PCB thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal for MOSFET turn-on/off; requires 4.5–16 V drive relative to source
S	Source	Reference node for gate drive and current return path; tied to power ground in buck converter low-side position
D (pins 1,2,3,4,7,8)	Drain	Main power output terminal; electrically and thermally connected to backside metal pad for low-inductance, high-current routing
NC (pin 5,6)	No Connect	Internally unconnected pins; must remain floating or grounded per layout guidelines to avoid parasitic coupling

Key Features

Feature	Design Value
StripFET™ II silicon architecture	Delivers optimal R_DS(on)/Q_g ratio for high-frequency, high-efficiency DC/DC conversion
PowerSO-8™ package with backside drain	Reduces R_thj-c to 1.8 °C/W - improves thermal headroom by >30% vs standard SO-8
Low Q_gd/Q_g ratio (12/24 nC)	Minimizes Miller plateau duration, enabling stable hard-switching up to 1 MHz
Body diode with t_rr = 40 ns	Supports synchronous rectification in buck topologies without external Schottky replacement
100% avalanche rated (E_AS specified)	Withstands repetitive inductive energy spikes in unregulated or transient-loaded CPU power stages

Applications

Mobile CPU Core VRM

Laptop Point-of-Load Converter

Use Scenario: High-current, low-voltage regulation for ARM or x86 processor cores requiring dynamic load steps up to 20 A/µs.

IC Role / Device Role: Low-side synchronous rectifier switch in multiphase buck converter.

Use Value: 0.0085 Ω R_DS(on) limits I²R loss to <320 mW at 25 A, reducing thermal stress on compact PCBs.

Use Scenario: Compact 5 V → 1.2 V point-of-load supply for GPU or chipset rail in ultrabook designs.

IC Role / Device Role: Main power switch in single-phase buck stage with integrated controller.

Use Value: 24 nC Q_g enables clean 500 kHz–1 MHz switching with minimal gate driver dissipation.

Mobile Baseband PMIC Output Stage

USB-C PD Fast-Charge Buck Controller

Use Scenario: Secondary DC/DC stage supplying RF transceiver bias rails with tight ripple and transient response.

IC Role / Device Role: High-efficiency pass element in programmable LDO or buck-boost hybrid regulator.

Use Value: 1.2 V V_SD and 40 ns t_rr ensure low-loss freewheeling during light-load discontinuous conduction mode.

Use Scenario: 20 V input buck converter delivering 9 V/3 A for USB-C PD 3.0 compliance in portable chargers.

IC Role / Device Role: Primary switching FET handling peak currents up to 30 A during burst-mode operation.

Use Value: 100 A pulsed rating (I_DM) and 1.8 °C/W R_thj-c sustain reliability under intermittent high-power bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0075 Ω @ 10 V; Q_g = 32 nC; SO-8 package, no backside drain	Higher gate charge increases driver loss; lacks thermal enhancement for sustained 25 A operation	Prefer where ultra-low R_DS(on) dominates over thermal or switching efficiency
Si7852DP-T1-GE3	R_DS(on) = 0.0095 Ω @ 10 V; Q_g = 21 nC; PowerPAK® SO-8 with exposed drain	Similar thermal performance but lower peak current rating (I_D = 20 A @ 25°C)	Prefer where gate drive efficiency is prioritized and peak current stays below 20 A

Compared with IRF7470PBF and Si7852DP-T1-GE3, STSJ25NF3LL uniquely balances ultra-low R_DS(on), moderate Q_g, and industry-leading R_thj-c - making it optimal for thermally constrained, high-current mobile CPU VRMs where both conduction and thermal management are critical.

Availability

STSJ25NF3LL is available at Aetrix Electronics and suitable for mobile CPU core VRMs, laptop point-of-load converters, and USB-C PD fast-charge buck stages requiring stable component supply and long-term industrial availability.

Supply support for STSJ25NF3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STSJ25NF3LL belongs to ST's Power MOSFET portfolio, engineered specifically for high-efficiency, high-density DC/DC conversion in battery-powered and thermally limited systems.

FAQ

Is STSJ25NF3LL pin-compatible with standard SO-8 MOSFETs?

No - STSJ25NF3LL uses the PowerSO-8™ package, which has identical footprint dimensions to SO-8 but integrates a thermally enhanced exposed drain pad on the underside. Pin 1–4 and 7–8 are drain-connected, requiring PCB layout adaptation for thermal via placement and solder stencil design.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±16 V, but ST recommends limiting gate drive to ≤12 V for long-term reliability. At V_GS = 10 V, R_DS(on) reaches its specified 0.0085 Ω; driving above 12 V yields diminishing R_DS(on) improvement while increasing oxide stress risk.

Can STSJ25NF3LL be used in synchronous rectification without an external Schottky diode?

Yes - its body diode is characterized with t_rr = 40 ns and Q_rr = 50 nC at T_j = 150°C, enabling use in synchronous buck topologies at ≤1 MHz. However, for >10 A continuous freewheeling, parallel Schottky clamping may still be advised to limit V_SD-induced losses.

Does STSJ25NF3LL support avalanche energy rating, and what is its test condition?

Yes - ST specifies single-pulse avalanche energy (E_AS) in the datasheet. Tested at T_j = 25°C with I_D = 25 A, V_DD = 25 V, and L = 0.1 mH, E_AS exceeds 120 mJ, confirming ruggedness against inductive switching transients in unregulated or faulted DC/DC stages.

STSJ25NF3LL Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STSJ25NF3LL FAQ

1.How can I place an order for STSJ25NF3LL through Aetrix?

Please submit a Request for Quotation (RFQ) for STSJ25NF3LL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STSJ25NF3LL reliable?

The price and inventory of STSJ25NF3LL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STSJ25NF3LL is usually 5 days.

3.What payment methods are accepted for STSJ25NF3LL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STSJ25NF3LL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STSJ25NF3LL?

STSJ25NF3LL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STSJ25NF3LL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STSJ25NF3LL?

For technical support, including STSJ25NF3LL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STSJ25NF3LL requirements.

6.How does Aetrix verify that STSJ25NF3LL is sourced from the original manufacturer or authorized distributors?

All STSJ25NF3LL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STSJ25NF3LL meets industry standards.

7.What is the process for return or replacement of STSJ25NF3LL?

All STSJ25NF3LL units undergo pre-shipment inspection (PSI). If there is an issue with STSJ25NF3LL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STSJ25NF3LL part is unused and in its original packaging.

Return procedure for STSJ25NF3LL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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