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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STT3P2UH7

Name: STT3P2UH7
Brand: STMicroelectronics
SKU: STT3P2UH7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STT3P2UH7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: STT3P2UH7.pdf

Description:: MOSFET P-CH 20V 3A SOT23-6

Quantity:: RFQ Add To RFQ list

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Inventory:7,522

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Product details

Overview

STT3P2UH7 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET using STripFET™ H7 trench-gate technology, rated for 20 V drain-source voltage, 0.087 Ω typical R_DS(on) at V_GS = 4.5 V and 1.5 A, and 3 A continuous drain current at T_pcb = 25 °C. It operates in high-frequency switching applications such as load switching in portable power management systems.

For engineers reviewing the STT3P2UH7 datasheet, STT3P2UH7 pinout, STT3P2UH7 application, or STT3P2UH7 equivalent, key selection criteria include its ultra-low gate charge (4.8 nC), low output capacitance (66 pF), and high avalanche ruggedness-critical for reliable operation in battery-powered DC-DC converters and USB power switches.

Technical Context

This device implements a trench-gate P-channel structure optimized for low conduction loss and fast switching. Its R_DS(on) remains stable across temperature (±10% variation from –75 °C to 125 °C) and exhibits low C_iss (510 pF) and C_rss (44 pF), enabling efficient operation above 1 MHz in synchronous buck or reverse-polarity protection circuits.

The integrated source-drain diode delivers 12.5 ns reverse recovery time and 5 nC Q_rr at T_j = 150 °C, supporting inductive load switching with minimal voltage overshoot. Gate threshold voltage (0.4–1.0 V) ensures robust turn-on control from 1.8 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage P-channel high-side switch applications
R_DS(on) typ.	0.087 Ω @ V_GS = 4.5 V, I_D = 1.5 A - Enables <130 mW conduction loss at 1.5 A, reducing thermal stress on SOT23-6L PCB
Q_g	4.8 nC - Low gate drive energy requirement supports direct interfacing with microcontroller GPIOs without buffer stages
C_oss	66 pF - Minimizes output energy loss during hard-switching transitions in compact DC-DC designs
T_j max	150 °C - Allows sustained operation in thermally constrained handheld enclosures with limited airflow
I_D cont.	3 A @ T_pcb = 25 °C - Supports peak load currents in USB-C port power switches and e-fuse circuits
V_GS(th)	0.4–1.0 V - Ensures full enhancement with 1.8 V I/O logic, eliminating need for level-shifting circuitry

Pinout & Package

SOT23-6L package: 6-pin surface-mount plastic package with exposed drain pad for enhanced thermal dissipation; footprint compliant with JEDEC MO-178AB variant; body dimensions 2.926 mm × 1.626 mm × 1.10 mm (D × E × A2).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level input; low C_iss enables fast edge response
2 (S)	Source	Reference node for gate drive; connected to system V_IN in high-side switch configuration
3 (D)	Drain	Output terminal; tied to load; electrically connected to exposed pad for thermal path to PCB
4 (D)	Drain	Second drain connection; parallel path to Pin 3 for reduced package inductance and improved current sharing
5 (S)	Source	Secondary source connection; reduces source inductance in high-dI/dt switching
6 (G)	Gate	Redundant gate connection; improves gate drive integrity and ESD robustness

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.087 Ω typ. at 4.5 V gate drive enables <150 mW conduction loss at 1.5 A in space-constrained SOT23-6L
Low gate charge	4.8 nC total charge allows full switching within 100 ns using 50 Ω driver impedance
High avalanche energy rating	Rated for repetitive unclamped inductive switching per JEDEC JESD22-A109, supporting robustness in motor drive flyback paths
ECOPACK® compliant	Halogen-free, RoHS-compliant SOT23-6L package meets industrial environmental compliance requirements
Thermal resistance	R_thj-pcb = 78 °C/W on 1 inch² FR-4 board enables 1.6 W dissipation without heatsink in ambient ≤60 °C

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated by protection IC's gate-drive signal.

Use Value: 0.087 Ω R_DS(on) limits voltage drop to <130 mV at 1.5 A, preserving battery runtime and minimizing self-heating.

Use Scenario: Hot-swap and fault isolation in USB Type-C power delivery ports.

IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS path under MCU control with fast turn-off (<60 ns total delay + fall time).

Use Value: 12.5 ns t_rr and 5 nC Q_rr suppress voltage spikes during hot-plug events, meeting USB PD 3.0 transient immunity requirements.

DC-DC Converter High-Side Switch

Industrial Sensor Power Sequencing

Use Scenario: Synchronous rectification in 12 V → 3.3 V buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side P-channel switch replacing bootstrap circuitry; driven directly by PWM controller with 1.8 V logic compatibility.

Use Value: 0.4–1.0 V V_GS(th) ensures reliable turn-on with low-voltage controllers, eliminating external level shifters and reducing BOM count.

Use Scenario: Controlled power-up sequencing of analog sensor front-ends in factory automation nodes.

IC Role / Device Role / Timing Role: Precision enable switch isolating 5 V sensor supply until MCU confirms system readiness.

Use Value: 1 µA I_DSS leakage at 20 V ensures <5 µW standby power draw, extending sleep-mode battery life in wireless sensor nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel low-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2021LFG-7	R_DS(on) = 0.095 Ω @ 4.5 V; Q_g = 5.2 nC; SOT23-6 package (non-exposed drain)	Higher thermal resistance (R_thj-pcb ≈ 110 °C/W); less suitable for sustained 2 A loads	Prefer when footprint compatibility is critical but thermal margin is available
AO3401	R_DS(on) = 0.085 Ω @ 4.5 V; Q_g = 5.5 nC; no specified avalanche rating	Lacks JEDEC-qualified avalanche ruggedness data; not recommended for inductive switching	Select only for purely resistive load switching where avalanche stress is absent

Compared with DMN2021LFG-7 and AO3401, STT3P2UH7 provides superior thermal performance via exposed drain pad, verified avalanche capability for inductive loads, and tighter V_GS(th) distribution-making it optimal for battery-powered systems requiring reliability under transient stress.

Availability

STT3P2UH7 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, DC-DC converter high-side switches, and industrial sensor power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for STT3P2UH7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STripFET™ H7 product line targets high-efficiency, high-frequency power switching in space-constrained applications, emphasizing low R_DS(on), minimized gate charge, and robust avalanche performance for portable and embedded systems.

FAQ

What is the maximum safe operating junction temperature for STT3P2UH7?

The absolute maximum operating junction temperature is 150 °C, validated per JEDEC JESD22-A104. Derating begins at T_j > 125 °C, where R_DS(on) increases by ~0.5%/°C. Thermal design must ensure T_j stays below 150 °C under worst-case ambient, power dissipation, and PCB copper area conditions.

Can STT3P2UH7 be used with 1.8 V logic-level gate drive?

Yes. With V_GS(th) ranging from 0.4 V to 1.0 V and R_DS(on) = 0.145 Ω typ. at V_GS = 1.8 V, the device achieves full enhancement at 1.5 A. This eliminates level-shifting circuitry in ultra-low-voltage microcontroller interfaces such as STM32L4 GPIOs.

Does STT3P2UH7 have an integrated body diode, and what are its recovery characteristics?

Yes. It features a monolithic source-drain diode with t_rr = 12.5 ns and Q_rr = 5 nC at T_j = 150 °C, di/dt = 100 A/µs. These values are measured per JEDEC JESD24-11 and support snubberless operation in low-inductance DC-DC topologies.

Is the SOT23-6L package of STT3P2UH7 lead-free and RoHS compliant?

Yes. The device carries ECOPACK® certification, confirming halogen-free, lead-free construction compliant with EU RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards. The SOT23-6L package uses matte tin plating over copper leadframe.

STT3P2UH7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.8 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

STT3P2UH7 FAQ

1.How can I place an order for STT3P2UH7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STT3P2UH7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STT3P2UH7 reliable?

The price and inventory of STT3P2UH7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STT3P2UH7 is usually 5 days.

3.What payment methods are accepted for STT3P2UH7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STT3P2UH7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STT3P2UH7?

STT3P2UH7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STT3P2UH7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STT3P2UH7?

For technical support, including STT3P2UH7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STT3P2UH7 requirements.

6.How does Aetrix verify that STT3P2UH7 is sourced from the original manufacturer or authorized distributors?

All STT3P2UH7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STT3P2UH7 meets industry standards.

7.What is the process for return or replacement of STT3P2UH7?

All STT3P2UH7 units undergo pre-shipment inspection (PSI). If there is an issue with STT3P2UH7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STT3P2UH7 part is unused and in its original packaging.

Return procedure for STT3P2UH7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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