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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU13N65M2

Name: STU13N65M2
Brand: STMicroelectronics
SKU: STU13N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU13N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU13N65M2.pdf

Description:: MOSFET N-CH 650V 10A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,692

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Product details

Overview

STU13N65M2 from STMicroelectronics is an N-channel 650 V, 430 mΩ (max), 10 A Power MOSFET based on MDmesh™ M2 technology in TO-220 package. It delivers extremely low gate charge (17 nC), optimized output capacitance profile (Coss = 27.5 pF typ.), and 100% avalanche-tested ruggedness for high-efficiency hard-switched SMPS topologies including PFC and LLC resonant converters.

For engineers reviewing the STU13N65M2 datasheet, STU13N65M2 pinout, STU13N65M2 application, or STU13N65M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), single-pulse avalanche energy (350 mJ), and Zener-protected gate reliability in high-noise industrial power stages.

Technical Context

This device employs a strip-layout MDmesh M2 vertical structure to minimize conduction loss while maintaining fast switching with low Crss (1.1 pF) and controlled Coss eq. (168.5 pF). Its gate threshold voltage (2–4 V) and low Qgd (7 nC) support robust gate drive design in 650 V primary-side switching applications.

The integrated body diode exhibits trr = 312 ns (TJ = 25 °C) and Qrr = 2.7 µC at 10 A, enabling reliable operation in discontinuous conduction mode (DCM) flyback and active clamp forward converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full-line transient surges in universal-input 85–265 VAC offline SMPS designs.
R_DS(on) max	430 mΩ at V_GS = 10 V, I_D = 5 A - Enables <1.5 W conduction loss at 10 A continuous drain current (T_C = 25 °C).
Q_g	17 nC - Reduces gate driver power requirement and enables >200 kHz operation with standard 1-A peak drivers.
C_oss	27.5 pF typ. - Minimizes turn-off energy loss and improves light-load efficiency in resonant topologies.
E_AS	350 mJ - Supports unclamped inductive switching stress without failure in PFC boost choke recovery events.
dv/dt ruggedness	50 V/ns - Ensures immunity to parasitic turn-on during high-speed switching in high-di/dt layouts.
T_J max	150 °C - Allows sustained operation in enclosed industrial power supplies with limited airflow.

Pinout & Package

TO-220 package with isolated tab (drain-connected); standard 3-pin through-hole mounting. Thermal resistance R_thJC = 1.14 °C/W enables direct heatsink attachment via screw or clip.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-voltage drain node	Electrically connected to drain; requires insulating washer when mounted to grounded heatsink.
G (Pin 1)	Gate control terminal	Low-impedance input (R_g = 6.5 Ω) requiring <10 V drive for full enhancement; Zener-protected to ±25 V.
S (Pin 3)	Source reference node	Common return path for load current and gate drive loop; critical for minimizing ground bounce in high-di/dt switching.

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces specific on-resistance by 25% vs. first-gen MDmesh, improving power density in compact adapters.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 350 mJ at T_J = 25 °C - eliminates need for derating in surge-prone mains inputs.
Zener-protected gate	Integrated gate-body Zener clamps transients to ±25 V, preventing oxide breakdown during ESD or layout-induced spikes.
Optimized C_oss profile	C_oss remains stable across 0–520 V, enabling predictable soft-switching behavior in LLC and QR flyback designs.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW active PFC front-end operating at 100 kHz with 96% efficiency target.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost converter.

Use Value: Low Q_g and C_oss reduce total switching loss by 18% vs. legacy 650 V MOSFETs, enabling smaller heatsinks.

Use Scenario: 48 V/50 A telecom rectifier module with forced-air cooling and 200 kHz switching.

IC Role / Device Role / Timing Role: Synchronous rectification switch in secondary-side LLC resonant converter.

Use Value: 150 °C T_J rating and 50 V/ns dv/dt ruggedness ensure stable operation under rapid load transients and line surges.

EV Onboard Chargers (OBC)

Renewable Energy Inverters

Use Scenario: Bidirectional OBC with dual-phase interleaved PFC and DC-DC isolation stage.

IC Role / Device Role / Timing Role: High-side switch in 650 V half-bridge PFC cell.

Use Value: Avalanche-rated construction withstands inductive kickback during phase-shift fault conditions without external clamping.

Use Scenario: 5 kW string inverter DC link switching with 16 kHz PWM and grid-synchronization.

IC Role / Device Role / Timing Role: DC bus switch in unidirectional buck-boost MPPT stage.

Use Value: Stable R_DS(on) over −40 to +125 °C ensures consistent efficiency across outdoor ambient temperature swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N65M2	Same die, identical specs, TO-220 tube-packaged variant; marking "13N65M2".	No functional difference; used interchangeably where packaging format permits.	Select when tube packaging or legacy BOM alignment is required.
IPW65R041CFD7	650 V, 41 mΩ typ., 13 A; CoolMOS™ CFD7 with lower R_DS(on) but higher Q_g (42 nC) and no Zener gate protection.	Better conduction loss at high current, but requires more robust gate drive and external TVS for gate safety.	Prefer for high-power (>5 kW), low-frequency (<100 kHz) applications where conduction dominates losses.

Compared with STP13N65M2, the original part offers identical performance in a discontinued order code; versus IPW65R041CFD7, STU13N65M2 trades higher R_DS(on) for lower gate charge, superior dv/dt immunity, and built-in gate protection-critical for cost-sensitive, noise-prone industrial SMPS designs.

Availability

STU13N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STU13N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STU13N65M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power conversion in industrial and renewable energy systems.

FAQ

Is STU13N65M2 pin-compatible with STP13N65M2?

Yes - both share identical TO-220 package outline, pin assignment (G-S-D), and thermal/mechanical footprint. The devices use the same silicon die and electrical specifications; only the order code and packaging format differ. No PCB redesign is needed when substituting between them.

What is the maximum recommended gate resistor value for 100 kHz operation?

For stable 100 kHz switching with minimal overshoot, a gate resistor of 4.7 Ω is validated per datasheet test conditions (td(on)/td(off) measured with RG = 4.7 Ω). Values above 10 Ω increase switching time and loss; below 2.2 Ω risk ringing and gate driver overstress due to Qg = 17 nC and Rg = 6.5 Ω intrinsic resistance.

Does STU13N65M2 require external gate protection?

No - it integrates a Zener diode between gate and source rated for ±25 V, eliminating the need for external TVS diodes in typical industrial environments. This protection is verified per JEDEC JESD22-A114 and survives 100% production avalanche testing, making external clamping redundant unless exposed to >±30 V transients.

Can STU13N65M2 be used in synchronous rectification?

No - it is an N-channel high-side switch optimized for primary-side hard switching, not low-side synchronous rectification. Its body diode reverse recovery (trr = 312 ns) and Qrr = 2.7 µC are too high for efficient SR operation; dedicated low-Qrr trench MOSFETs like STP16NF06L are recommended for secondary-side rectification.

STU13N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU13N65M2 FAQ

1.How can I place an order for STU13N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU13N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU13N65M2 reliable?

The price and inventory of STU13N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU13N65M2 is usually 5 days.

3.What payment methods are accepted for STU13N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU13N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU13N65M2?

STU13N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU13N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU13N65M2?

For technical support, including STU13N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU13N65M2 requirements.

6.How does Aetrix verify that STU13N65M2 is sourced from the original manufacturer or authorized distributors?

All STU13N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU13N65M2 meets industry standards.

7.What is the process for return or replacement of STU13N65M2?

All STU13N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STU13N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU13N65M2 part is unused and in its original packaging.

Return procedure for STU13N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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