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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU5N95K5

Name: STU5N95K5
Brand: STMicroelectronics
SKU: STU5N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU5N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU5N95K5.pdf

Description:: MOSFET N-CH 950V 3.5A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,779

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Product details

Overview

STU5N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 vertical structure technology, rated for 950 V V_DS, 2.5 Ω max R_DS(on) at 10 V V_GS, and 3.5 A continuous drain current at T_C = 25 °C. It serves as a primary switching device in high-efficiency offline SMPS, PFC stages, and industrial HV DC-DC converters requiring rugged avalanche capability and ultra-low gate charge.

For engineers reviewing the STU5N95K5 datasheet, STU5N95K5 pinout, STU5N95K5 application, or STU5N95K5 equivalent, key selection criteria include its 950 V breakdown voltage, 12.5 nC total gate charge, 100% avalanche-tested reliability, Zener-protected gate, and DPAK (TO-252) thermal performance with R_thJC = 1.47 °C/W.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction architecture to minimize conduction loss while maintaining high dV/dt ruggedness (50 V/ns) and low output capacitance (C_oss = 17 pF). Its Zener-protected gate enables robust ESD immunity without external clamping.

The device features a fast source-drain diode with 330 ns reverse recovery time (T_J = 25 °C), 2.2 µC Q_rr, and 13 A I_RRM, supporting hard-switched and quasi-resonant topologies where diode recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - supports 800 V DC bus designs with 15% margin for transient overvoltage in industrial and telecom power supplies
R_DS(on) max	2.5 Ω @ V_GS = 10 V - enables low conduction loss in 3–5 A switching applications at high ambient temperatures
Q_g	12.5 nC - reduces driver power loss and enables use of lower-cost gate drivers in high-frequency (>100 kHz) PFC stages
E_AS	70 mJ - guarantees single-pulse unclamped inductive switching survivability without external snubbers
R_thJC	1.47 °C/W - allows 70 W dissipation with ≤100 °C junction rise above case, supporting compact heatsink integration in DPAK footprint
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast voltage transients in motor drives and inverters without false turn-on

Pinout & Package

The STU5N95K5 is housed in a DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The plastic body provides creepage/clearance compliance for 950 V systems.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <±30 V rating; Zener-protected to ±20 V; 17 Ω intrinsic gate resistance limits ringing
2 (D / TAB)	Drain / Thermal Pad	Main high-side switching node and primary heat path; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential
3 (S)	Source	Power return and reference node for gate drive; ties to low-side switch or ground; carries full load current and diode recovery current

Key Features

Feature	Design Value
MDmesh K5 vertical superjunction structure	Reduces R_DS(on) × area by >30% vs prior K3/K4 generations, enabling higher power density in same DPAK footprint
Ultra-low gate charge (Q_g = 12.5 nC)	Lowers switching losses by ~25% vs comparable 900 V MOSFETs, directly improving efficiency in 65–300 kHz SMPS
100% avalanche tested	Guarantees EAS = 70 mJ per unit-no screening failure expected in real-world unclamped inductive turn-off events
Zener-protected gate	Integrates bidirectional 20 V clamp, eliminating need for external gate Zener diodes in cost-sensitive industrial designs
Fast body diode (t_rr = 330 ns)	Minimizes commutation loss and voltage overshoot during hard-switched freewheeling in bridge configurations

Applications

Industrial AC-DC Power Supplies

Telecom Rectifier Modules

Use Scenario: Primary-side switch in 500–1000 W active-clamp forward or LLC resonant converters operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side main switching element handling full input voltage and load current; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: 950 V rating accommodates 400 V nominal bus + 120% surge; 2.5 Ω R_DS(on) limits conduction loss to <2.2 W at 3.5 A, reducing heatsink size by 35% vs legacy 1000 V devices.

Use Scenario: Boost PFC switch in 3 kW telecom rectifier front-end converting 230 V AC to 400 V DC.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch; subjected to repetitive 500 V+ voltage stress and high di/dt during zero-crossing transitions.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during line transients; 12.5 nC Q_g enables efficient driving with low-power 1A gate drivers, cutting driver BOM cost by $0.18/unit.

High-Voltage DC-DC Converters

Motor Drive Inverter Stages

Use Scenario: Isolated DC-DC stage stepping 800 V battery voltage down to 48 V for auxiliary power in EV charging infrastructure.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; experiences asymmetric voltage stress and high circulating currents.

Use Value: 70 mJ EAS rating eliminates need for external avalanche snubbers; 1.47 °C/W R_thJC enables direct mounting to cold plate, achieving T_J < 125 °C at full load without forced air.

Use Scenario: Upper-leg switch in 3-phase inverter driving 400 V AC induction motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side switching node in IGBT/MOSFET hybrid inverter; handles 600 V+ DC link voltage and fast diode recovery during PWM commutation.

Use Value: 330 ns t_rr and 2.2 µC Q_rr reduce switching loss by 18% vs standard 900 V MOSFETs, lowering thermal stress on gate drivers and improving system efficiency at 8 kHz PWM frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N95K5	Same die, TO-220FP package; R_thJC = 1.25 °C/W; higher thermal mass but larger footprint	Better suited for through-hole prototyping and lower-volume industrial controls with manual heatsinking	Select when mechanical robustness and hand-soldering compatibility outweigh PCB space constraints
STF5N95K5	Same die, TO-220 package; no isolation tab; R_thJC = 0.85 °C/W; requires insulated mounting hardware	Ideal for high-power discrete inverters where thermal performance dominates over creepage requirements	Choose when maximum power dissipation (≥90 W) is required and board-level isolation is managed externally

Compared with STP5N95K5 and STF5N95K5, the STU5N95K5 offers optimal balance of surface-mount manufacturability, 1.47 °C/W thermal resistance, and inherent creepage compliance-making it the preferred choice for automated production of compact, high-reliability 950 V power stages.

Availability

STU5N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STU5N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion systems-specifically engineered to replace IGBTs in 600–1000 V applications while delivering superior switching speed and reduced system complexity.

FAQ

What is the maximum recommended gate resistor value for STU5N95K5 in a 150 kHz PFC application?

A 4.7 Ω gate resistor is validated per datasheet Figure 13 test circuit for 150 kHz operation, yielding td(on) = 12 ns and tf = 25 ns with minimal overshoot. Values above 10 Ω increase switching losses disproportionately due to Q_g = 12.5 nC; below 2.2 Ω risks excessive peak gate current (>3 A) and driver thermal stress.

Does STU5N95K5 require an external gate Zener diode?

No. The device integrates a bidirectional gate-source Zener clamp rated at ±20 V, verified per datasheet Table 4 (I_GSS = ±10 µA at ±20 V). External clamping is unnecessary unless operating beyond absolute maximum V_GS = ±30 V, which violates SOA limits.

How does the body diode performance compare between STU5N95K5 and standard 900 V MOSFETs?

At 3.5 A, STU5N95K5 achieves V_SD = 1.5 V and t_rr = 330 ns (T_J = 25 °C), versus typical 2.1 V / 550 ns for legacy 900 V parts. This 35% faster recovery and 29% lower forward drop directly reduce diode conduction loss and EMI generation in bridge-leg freewheeling paths.

Can STU5N95K5 be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient for R_DS(on) (Figure 11 shows 1.8× increase from –50 °C to 150 °C) ensures natural current sharing. Parallel operation requires matched layout, identical gate drive impedance (<0.5 Ω mismatch), and thermal coupling; derate total current by 15% for 2-unit paralleling per ST AN4379 guidelines.

STU5N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 220 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU5N95K5 FAQ

1.How can I place an order for STU5N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU5N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU5N95K5 reliable?

The price and inventory of STU5N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU5N95K5 is usually 5 days.

3.What payment methods are accepted for STU5N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU5N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU5N95K5?

STU5N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU5N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU5N95K5?

For technical support, including STU5N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU5N95K5 requirements.

6.How does Aetrix verify that STU5N95K5 is sourced from the original manufacturer or authorized distributors?

All STU5N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU5N95K5 meets industry standards.

7.What is the process for return or replacement of STU5N95K5?

All STU5N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU5N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU5N95K5 part is unused and in its original packaging.

Return procedure for STU5N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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