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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU60N55F3

Name: STU60N55F3
Brand: STMicroelectronics
SKU: STU60N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU60N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU60N55F3.pdf

Description:: MOSFET N-CH 55V 80A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,646

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Product details

Overview

STU60N55F3 from STMicroelectronics is an N-channel 55 V, 6.5 mΩ (typ), 80 A (TC = 25°C), 110 W DPAK-compatible Power MOSFET using STripFET™ III technology. It delivers low on-resistance and robust avalanche capability for high-efficiency DC-DC converters and motor drive half-bridges in industrial power supplies.

For engineers reviewing the STU60N55F3 datasheet, STU60N55F3 pinout, STU60N55F3 application, or STU60N55F3 equivalent, key selection criteria include its 55 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 10 V, 390 mJ single-pulse avalanche energy, TO-251 (IPAK) package thermal resistance (R_thj-case = 1.36 °C/W), and standard-threshold gate drive compatibility with 3.3 V/5 V logic.

Technical Context

This MOSFET employs STripFET™ III planar process to minimize R_DS(on) while maintaining rugged unclamped inductive switching performance. Its 55 V breakdown voltage and 80 A continuous drain current support medium-voltage, high-current switching in hard-switched topologies.

The device features a fully rated source-drain diode with 80 A continuous and 320 A pulsed capability, 47 ns reverse recovery time, and 3.7 A peak reverse recovery current - enabling synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with 20% margin
R_DS(on) (typ)	6.5 mΩ at V_GS = 10 V - Enables ≤ 52 W conduction loss at 80 A, critical for thermal management in compact IPAK layouts
I_D (cont)	80 A at T_C = 25°C - Supports high-current motor phase legs and primary-side switches in 1–3 kW industrial inverters
E_AS	390 mJ - Withstands repetitive unclamped inductive switching events without derating, eliminating need for snubbers in flyback or relay drivers
Q_g	33.5 nC (typ) - Optimized for 10 V gate drive; enables <100 ns turn-on with 4.7 Ω gate resistor in 100 kHz PWM applications
dv/dt rating	11 V/ns - Ensures immunity to parasitic turn-on in high-di/dt environments like BLDC gate drivers
T_j max	175°C - Allows operation in sealed enclosures or high-ambient industrial environments without forced cooling

Pinout & Package

STU60N55F3 is housed in TO-251 (IPAK) package: a surface-mount variant of TO-220 with isolated tab, optimized for PCB thermal relief and automated assembly. The package features three leads - Gate (G), Drain (D), Source (S) - with internal leadframe geometry supporting 1.36 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 2–4 V threshold signal; requires ≤ 33.5 nC charge for full enhancement; susceptible to ESD - must be protected per IEC 61000-4-2 Level 2
2 (Drain)	High-side power terminal	Connected to input bus or transformer secondary; carries full load current during conduction; electrically tied to exposed metal tab (drain-connected)
3 (Source)	Power return and reference node	Serves as local ground reference for gate driver; carries same current as drain but opposite direction; routed with low-inductance trace to minimize switching oscillation

Key Features

Feature	Design Value
STripFET™ III process	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation - directly enabling higher efficiency at 100–500 kHz switching frequencies
100% avalanche tested	Guarantees single-pulse E_AS ≥ 390 mJ - eliminates need for design margining or external clamping in inductive load circuits
Standard gate threshold (V_GS(th))	2–4 V range - ensures reliable turn-on with 3.3 V microcontrollers and compatibility with legacy 5 V logic-level drivers
Low C_iss/C_oss ratio	2200 pF / 500 pF - improves zero-voltage switching (ZVS) initiation in resonant converters and reduces Miller-induced shoot-through risk
ECOPACK® compliant	Meets RoHS Directive 2011/65/EU and halogen-free requirements - supports compliance for industrial and consumer end equipment

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge leg in 750 W brushless DC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-side N-channel switch in synchronous configuration; commutated at 20 kHz with dead-time control.

Use Value: 6.5 mΩ R_DS(on) limits conduction loss to 41.6 W at 80 A peak, enabling natural convection cooling on 2-layer 2 oz Cu PCB.

Use Scenario: Primary-side switch in active-clamp forward converter for 1U server power supply.

IC Role / Device Role / Timing Role: Main power switch handling 48 V input, operating at 250 kHz with ZVS-assisted transitions.

Use Value: 33.5 nC Q_g and 11 V/ns dv/dt rating ensure clean turn-on under high capacitive loading and prevent false triggering during clamp reset.

Solar Microinverter DC-DC Stage

EV Onboard Charger Auxiliary Converter

Use Scenario: Step-up DC-DC stage interfacing PV panel (30–50 V) to 400 V DC link in residential microinverter.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved boost topology; body diode conducts during light-load discontinuous mode.

Use Value: 80 A continuous source-drain current and 47 ns t_rr allow efficient freewheeling without external diode, reducing BOM count and layout area.

Use Scenario: Isolated auxiliary supply (12 V @ 5 A) powering gate drivers and MCU in 6.6 kW OBC.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating across -40°C to +125°C ambient.

Use Value: 175°C T_j max and 390 mJ E_AS ensure reliability during cold cranking transients and sustained overload conditions without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; lower V_DS (55 V same), but 4× higher on-resistance and no avalanche rating	Acceptable only in low-current (<20 A), low-duty-cycle applications where thermal margin is abundant	Select only if cost sensitivity outweighs efficiency and ruggedness requirements; not suitable for motor drives or high-reliability PSUs
IXTP50N10P	V_DS = 100 V; R_DS(on) = 22 mΩ @ 10 V; higher voltage rating but significantly higher conduction loss	Better for 72 V battery systems but inefficient at 48 V due to excessive R_DS(on) × I² loss	Choose only when system requires >60 V blocking; otherwise, STU60N55F3 provides superior 48 V optimization

Compared with IRFZ44NPBF and IXTP50N10P, STU60N55F3 uniquely balances 55 V rating, 6.5 mΩ conduction loss, and guaranteed avalanche ruggedness - making it the optimal choice for thermally constrained, high-reliability 48 V industrial switching where both efficiency and fault tolerance are mandatory.

Availability

STU60N55F3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger auxiliary converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STU60N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

STU60N55F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion - emphasizing low R_DS(on), fast switching, and intrinsic avalanche robustness without external protection.

FAQ

What is the maximum continuous drain current for STU60N55F3 at 100°C case temperature?

The maximum continuous drain current is 56 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-251 (IPAK) package and must be applied in designs where heatsinking is limited or ambient temperature exceeds 70°C.

Does STU60N55F3 require a gate driver IC, or can it be driven directly by a microcontroller?

A microcontroller GPIO alone cannot safely drive STU60N55F3 due to its 33.5 nC total gate charge and 1.36 °C/W thermal resistance. Direct drive risks slow switching, excessive gate dissipation, and shoot-through. A dedicated gate driver (e.g., STMicro's STGAP2S) with ≥2 A peak output is required for reliable 100+ kHz operation.

Is the exposed metal tab on the STU60N55F3 IPAK package electrically connected, and to which terminal?

Yes - the exposed metal tab is internally connected to the Drain (pin 2). It must be electrically isolated from the PCB ground plane unless the drain node is at ground potential. Thermal vias under the tab must use solder mask-defined isolation to prevent shorting in multilayer boards.

How does the 390 mJ avalanche energy rating translate to real-world circuit protection?

The 390 mJ rating means STU60N55F3 can absorb a single 32 A inductive current interruption event at 25 V without failure - sufficient to handle worst-case flyback energy in 80 A motor phase legs or relay coils. It eliminates need for external TVS or RCD snubbers in most industrial switching applications.

STU60N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STU60N55F3 FAQ

1.How can I place an order for STU60N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU60N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU60N55F3 reliable?

The price and inventory of STU60N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU60N55F3 is usually 5 days.

3.What payment methods are accepted for STU60N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU60N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU60N55F3?

STU60N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU60N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU60N55F3?

For technical support, including STU60N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU60N55F3 requirements.

6.How does Aetrix verify that STU60N55F3 is sourced from the original manufacturer or authorized distributors?

All STU60N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU60N55F3 meets industry standards.

7.What is the process for return or replacement of STU60N55F3?

All STU60N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STU60N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU60N55F3 part is unused and in its original packaging.

Return procedure for STU60N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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