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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU8N65M5

Name: STU8N65M5
Brand: STMicroelectronics
SKU: STU8N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU8N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU8N65M5.pdf

Description:: MOSFET N-CH 650V 7A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU8N65M5 from STMicroelectronics is an N-channel 650 V, 560 mΩ typ. (600 mΩ max.), 7 A MDmesh™ M5 Power MOSFET in TO-220FP package, optimized for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives requiring robust avalanche capability and low conduction loss.

For engineers reviewing the STU8N65M5 datasheet, STU8N65M5 pinout, STU8N65M5 application, or STU8N65M5 equivalent, this device delivers verified 15 nC total gate charge, 120 mJ single-pulse avalanche energy, 150 °C max junction temperature, and 1.79 °C/W junction-to-case thermal resistance - critical for thermal-limited high-voltage power conversion designs.

Technical Context

This MOSFET employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high voltage blocking and fast switching. Its 650 V V_(BR)DSS rating supports universal-input AC/DC front-ends up to 400 V DC bus.

The integrated body diode features 200 ns reverse recovery time (T_J = 25 °C) and 1.6 µC Q_rr, enabling hard-switched operation with reduced diode-related losses. Gate threshold voltage is tightly specified at 3–5 V, ensuring stable turn-on across temperature and compatible with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Supports 400 V DC bus with 62.5 % safety margin for surge and ringing in offline converters.
R_DS(on) max	600 mΩ @ V_GS = 10 V, I_D = 3.5 A - Enables <1.5 W conduction loss at 7 A continuous drain current.
I_D cont @ T_C = 25 °C	7 A - Sustains full-rated current with adequate heatsinking on TO-220FP package.
Q_g	15 nC - Reduces gate drive power and enables >100 kHz switching without excessive driver loss.
E_AS	120 mJ - Confirmed 100 % avalanche tested; supports unclamped inductive switching in relay/motor control.
R_thJC	1.79 °C/W - Allows direct thermal path to heatsink; enables 70 W dissipation with ≤127 °C case-to-junction rise.
dv/dt immunity	15 V/ns - Resists false turn-on during high-speed voltage transients in bridge configurations.

Pinout & Package

STU8N65M5 is housed in TO-220FP (Full-Pak) package: insulated plastic case with metal tab acting as drain terminal, enabling direct mounting to heatsink without isolation hardware. Package height is 10.0–10.4 mm; lead pitch is 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-side power switch node	Electrically connected to drain; serves as primary thermal interface - must be electrically isolated from PCB ground plane.
Pin 1 (Gate)	Control input	Low-impedance MOS gate requiring <15 nC charge; sensitive to ESD - requires gate resistor and clamping diode in layout.
Pin 2 (Source)	Power return reference	Common return for load current and gate drive; forms local ground reference for driver ICs mounted nearby.
Pin 3 (Drain)	Power output node	Internally bonded to tab; redundant drain connection for mechanical stability - must be tied to same net as tab.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Delivers 560 mΩ typ. R_DS(on) at 650 V - 30 % lower than prior-generation 650 V MOSFETs, reducing conduction loss in PFC and LLC topologies.
100 % avalanche rated	Guarantees 2 A repetitive avalanche current and 120 mJ single-pulse energy - eliminates need for external snubbers in flyback and resonant converters.
Low gate charge (15 nC)	Enables use of low-power gate drivers (e.g., STGAP2S) and reduces switching loss by >25 % vs. comparable 650 V devices with >20 nC Q_g.
Fast body diode (t_rr = 200 ns)	Minimizes reverse recovery loss in synchronous rectification and half-bridge applications - measurable improvement in efficiency at 65 kHz.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per JEDEC J-STD-609; suitable for industrial and consumer equipment with strict environmental mandates.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 1 kW server power supply operating in continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Main switching transistor in boost PFC circuit, switching at 65–100 kHz with 10 V gate drive.

Use Value: 560 mΩ R_DS(on) and 15 nC Q_g reduce total losses by 1.8 W vs. legacy 650 V MOSFETs, enabling 96.2 % efficiency at full load.

Use Scenario: 3-phase inverter driving 0.75 kW induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg, handling 7 A RMS phase current.

Use Value: 120 mJ E_AS withstands motor stall conditions without failure; 200 ns t_rr prevents shoot-through during commutation.

LED Streetlight Driver

EV Onboard Charger Auxiliary Supply

Use Scenario: 150 W constant-current LED driver with active PFC and flyback secondary.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter, operating at variable frequency up to 130 kHz.

Use Value: 15 V/ns dv/dt immunity prevents spurious turn-on during ZVS transitions; TO-220FP package simplifies heatsink integration in sealed enclosure.

Use Scenario: 12 V auxiliary power supply in 6.6 kW OBC, deriving bias from 400 V DC link.

IC Role / Device Role / Timing Role: Primary switch in forward converter powering gate drivers and MCU, running at fixed 200 kHz.

Use Value: 1.79 °C/W R_thJC allows 70 W dissipation with compact heatsink - critical for space-constrained automotive under-hood placement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB8N65M5	D²PAK package; R_thJC = 1.79 °C/W (same), but higher R_thJA = 30 °C/W vs. TO-220FP's 62.5 °C/W - better for board-level cooling.	Suitable for surface-mount designs with limited board space; requires solder-reflow compatible layout and no mechanical mounting hardware.	Select when automated assembly and PCB thermal management are prioritized over discrete heatsink attachment.
STD8N65M5	DPAK package; R_thJC = 5.0 °C/W - 2.8× higher thermal resistance than STU8N65M5; same R_DS(on) and Q_g.	Targeted at medium-power adapters (<65 W) where lower cost and smaller footprint outweigh thermal performance needs.	Choose only for thermally non-critical, low-duty-cycle applications - not recommended for continuous 7 A operation.

Compared with STB8N65M5 and STD8N65M5, STU8N65M5 offers superior thermal performance via TO-220FP's low R_thJC and mechanical heatsink interface, making it the optimal choice for high-reliability, high-power density offline power supplies where junction temperature control is critical.

Availability

STU8N65M5 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, LED streetlight drivers, and EV onboard charger auxiliary supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for STU8N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU8N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC/DC converters, PFC circuits, and industrial motor control systems.

FAQ

What is the maximum continuous drain current for STU8N65M5 at 100 °C case temperature?

The maximum continuous drain current is 4.4 A at T_C = 100 °C, as specified in Table 1 of DS6548 Rev 7. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature rating.

Does STU8N65M5 include an integrated gate protection diode?

No, STU8N65M5 does not integrate a gate protection diode. The gate oxide is rated for ±25 V absolute maximum gate-source voltage; external 18 V Zener clamping between gate and source is required to prevent ESD damage or overvoltage during switching transients.

Can STU8N65M5 replace STP8N65M5 in existing designs?

No - STP8N65M5 uses TO-220 (non-FP) package with exposed drain tab requiring electrical isolation, whereas STU8N65M5 uses TO-220FP with insulated tab. Mechanical fit and thermal interface differ; redesign of heatsink mounting and PCB layout is necessary for replacement.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

At T_J = 150 °C, the reverse recovery charge is 1.9 µC, as measured under ISD = 7 A, di/dt = 100 A/µs, and V_DD = 100 V (Table 7, DS6548 Rev 7). This value is 18.8 % higher than the 25 °C value (1.6 µC), reflecting increased minority carrier lifetime at elevated temperature.

STU8N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU8N65M5 FAQ

1.How can I place an order for STU8N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU8N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU8N65M5 reliable?

The price and inventory of STU8N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU8N65M5 is usually 5 days.

3.What payment methods are accepted for STU8N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU8N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU8N65M5?

STU8N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU8N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU8N65M5?

For technical support, including STU8N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU8N65M5 requirements.

6.How does Aetrix verify that STU8N65M5 is sourced from the original manufacturer or authorized distributors?

All STU8N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU8N65M5 meets industry standards.

7.What is the process for return or replacement of STU8N65M5?

All STU8N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STU8N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU8N65M5 part is unused and in its original packaging.

Return procedure for STU8N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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