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STMicroelectronics STU95N4F3

Part No.:
STU95N4F3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixSTU95N4F3.pdf
Description:
MOSFET N-CH 40V 80A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,511

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Product details

Overview

STU95N4F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in IPAK package, rated for 40V VDS, 5.4 mΩ RDS(on) at VGS = 10 V, 80 A continuous drain current at TC = 25°C, and 110 W power dissipation - designed for high-current automotive switching applications including motor control and DC-DC conversion.

For engineers reviewing the STU95N4F3 datasheet, STU95N4F3 pinout, STU95N4F3 application, or STU95N4F3 equivalent, key selection criteria include its low on-resistance, rugged unclamped inductive switching capability (EAS = 400 mJ), 100% avalanche tested performance, and thermal resistance of 1.36 °C/W (junction-to-case) - critical for thermally constrained board-level designs.

Technical Context

This device employs ST's "Single Feature Size™" strip-based STripFET™ process, enabling high cell density and exceptional manufacturing reproducibility. Its gate threshold voltage (2–4 V) supports standard logic-level drive, and it features low total gate charge (Qg = 40 nC) with fast switching times (td(on) = 15 ns, tf = 15 ns).

The integrated source-drain diode exhibits 1.5 V forward voltage at 80 A and 45 ns reverse recovery time under specified conditions (Tj = 150°C, di/dt = 100 A/µs). Safe operating area (SOA) is defined up to 320 A pulsed drain current and supports unclamped inductive load testing per JEDEC standards.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage; defines maximum system bus voltage compatibility.
RDS(on) 5.4 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
ID (cont) 80 A @ TC = 25°C - Supports high-current loads without derating in adequately cooled PCB-mount configurations.
EAS 400 mJ - Single-pulse avalanche energy rating confirms robustness against inductive turn-off transients.
Qg 40 nC - Low gate charge enables efficient driving with standard gate drivers and reduces switching losses.
Rth(j–case) 1.36 °C/W - Junction-to-case thermal resistance allows direct mounting to heatsinks for high-power operation.
tr/tf 50 ns / 15 ns - Fast rise/fall times support high-frequency PWM operation up to ~200 kHz.

Pinout & Package

STU95N4F3 is housed in an IPAK (TO-251AA) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The package features a single exposed drain pad for thermal and electrical connection to the PCB.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control input Receives gate drive signal; requires ≤ ±20 V VGS; threshold 2–4 V enables TTL/CMOS-compatible drive.
2 (Drain) High-side power terminal Connected to load supply rail; electrically and thermally tied to exposed metal tab for low-inductance, high-current routing.
3 (Source) Power return path Reference node for gate drive; forms common return with driver ground; carries full load current.

Key Features

Feature Design Value
Standard threshold drive VGS(th) = 2–4 V - Eliminates need for level-shifting gate drivers in 5 V or 3.3 V control systems.
100% avalanche tested EAS = 400 mJ - Guarantees ruggedness in real-world inductive switching without external snubbers.
Low RDS(on) 5.4 mΩ @ 10 V - Reduces I²R conduction loss by >30% vs. comparable 40 V MOSFETs in same package class.
Low Qg & Qgd Qg = 40 nC, Qgd = 8 nC - Minimizes Miller effect, enabling stable high-speed switching with minimal gate oscillation.
ECOPACK® compliant Lead-free second-level interconnect - Meets RoHS and JEDEC JESD97 environmental compliance for industrial and automotive use.

Applications

Automotive Motor Control DC-DC Converter High-Side Switch

Use Scenario: Driving brushed DC motors in power seats, window lifts, and HVAC blowers in 12 V automotive systems.

IC Role / Device Role / Timing Role: High-current N-channel switch replacing mechanical relays; operates in hard-switched PWM mode at 1–20 kHz.

Use Value: 5.4 mΩ RDS(on) limits conduction loss to <0.86 W at 40 A, enabling compact PCB layout without forced air cooling.

Use Scenario: High-side synchronous rectifier in 12 V → 5 V/3.3 V buck converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 80 A during transient load steps.

Use Value: 400 mJ EAS rating ensures reliable operation during output short-circuit events without device failure.

Industrial Solenoid Driver LED Lighting Power Switch

Use Scenario: Driving 24 V solenoid valves in factory automation PLC I/O modules with fast on/off cycling.

IC Role / Device Role / Timing Role: Low-inductance, high-reliability power switch subjected to repetitive unclamped inductive turn-off stress.

Use Value: 100% avalanche-tested construction eliminates need for external flyback diodes or RC snubbers in cost-sensitive designs.

Use Scenario: Dimmable LED driver high-side switch in commercial lighting ballasts requiring >100,000-cycle lifetime.

IC Role / Device Role / Timing Role: Constant-current switching element operating at 200–500 Hz PWM frequency with high thermal cycling duty.

Use Value: 1.36 °C/W Rth(j–case) enables direct copper pour heatsinking, sustaining 80 A pulses without junction temperature exceedance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF3205PbF RDS(on) = 8.0 mΩ @ 10 V; higher Qg = 71 nC; TO-220 package only Larger footprint and higher conduction loss; less suitable for space-constrained IPAK layouts Prefer STU95N4F3 where board area, thermal performance, or gate drive efficiency are prioritized.
STP95N4F3 Identical die, TO-220 through-hole package; Rth(j–case) = 1.36 °C/W same; lead temperature limit 300°C vs. 275°C for IPAK Better suited for prototyping or high-temperature soldering; lacks surface-mount thermal interface advantage Choose STU95N4F3 for automated SMT assembly and improved thermal coupling to PCB copper planes.

Compared with IRF3205PbF and STP95N4F3, STU95N4F3 delivers lower on-resistance and gate charge in a surface-mount IPAK package - offering superior power density and thermal management for volume production of automotive and industrial power modules.

Availability

STU95N4F3 is available at Aetrix Electronics and suitable for automotive motor control, industrial solenoid actuation, DC-DC converter switching, and LED lighting power stages requiring stable component supply and long-term manufacturability.

Supply support for STU95N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive-grade ICs.

STU95N4F3 belongs to ST's STripFET™ F3 series - engineered for high-efficiency, high-reliability power switching in automotive and industrial environments where ruggedness, low RDS(on), and avalanche capability are mandatory.

FAQ

Is STU95N4F3 suitable for 12 V automotive battery applications?

Yes. With a 40 V VDS rating and guaranteed operation across –55°C to +175°C junction temperature range, STU95N4F3 is designed for 12 V automotive systems including load-dump transient conditions (up to ~40 V). Its 100% avalanche testing ensures reliability during inductive load switching in engine control and body electronics.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current drops to 65 A at TC = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the IPAK package and must be applied when ambient or heatsink conditions prevent maintaining TC ≤ 25°C.

Does STU95N4F3 require a gate resistor for stability?

A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in high-di/dt applications. The device's low Qgd (8 nC) and fast switching reduce Miller-induced oscillation risk, but external gate resistance remains essential for EMI control and driver protection.

Can STU95N4F3 replace STP95N4F3 in existing TO-220 designs?

No - STU95N4F3 uses IPAK (TO-251AA) packaging, which has different footprint, thermal interface, and soldering profile than TO-220. While electrically identical, mechanical redesign is required for PCB layout, heatsink attachment, and reflow profile adaptation.

STU95N4F3 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

STU95N4F3 FAQ

1.How can I place an order for STU95N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU95N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU95N4F3 reliable?

The price and inventory of STU95N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU95N4F3 is usually 5 days.

3.What payment methods are accepted for STU95N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU95N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU95N4F3?

STU95N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU95N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU95N4F3?

For technical support, including STU95N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU95N4F3 requirements.

6.How does Aetrix verify that STU95N4F3 is sourced from the original manufacturer or authorized distributors?

All STU95N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU95N4F3 meets industry standards.

7.What is the process for return or replacement of STU95N4F3?

All STU95N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STU95N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU95N4F3 part is unused and in its original packaging.

Return procedure for STU95N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STU95N4F3 Tags

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