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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW13N60M2

Name: STW13N60M2
Brand: STMicroelectronics
SKU: STW13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW13N60M2.pdf

Description:: MOSFET N-CH 600V 11A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:3,903

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Product details

Overview

STW13N60M2 from STMicroelectronics is an N-channel 600 V, 350 mΩ typ. (380 mΩ max.), 11 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, optimized for high-efficiency hard-switching and resonant converters in industrial SMPS, PFC stages, and auxiliary power supplies.

For engineers reviewing the STW13N60M2 datasheet, STW13N60M2 pinout, STW13N60M2 application, or STW13N60M2 equivalent, key selection criteria include avalanche ruggedness (125 mJ EAS), low Coss eq. (120 pF), gate charge (17 nC), dv/dt immunity (50 V/ns), and Zener-protected gate reliability.

Technical Context

This device employs ST's MDmesh M2 vertical superjunction architecture with strip layout to minimize R_DS(on) while maintaining low C_oss and Crss-enabling fast switching with reduced switching losses and improved EMI behavior in 65–100 kHz PFC and 200–500 kHz LLC topologies.

Its 100% avalanche-tested capability (I_AR = 2.8 A, E_AS = 125 mJ), integrated gate Zener clamp (±25 V rating), and robust diode recovery (trr = 297 ns at TJ = 25 °C) support reliable operation under unclamped inductive switching and line transients in offline power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input designs with ≥20% margin against surge and line peaks
R_DS(on) max	380 mΩ - enables <1.5 W conduction loss at 11 A continuous drain current (T_C = 25 °C)
Q_g	17 nC - reduces gate drive power requirement and allows use of low-power drivers (e.g., STGAP2S)
C_oss eq.	120 pF - minimizes capacitive turn-on loss and improves zero-voltage switching (ZVS) margin in resonant converters
E_AS	125 mJ - ensures single-pulse avalanche survivability during startup, overload, or short-circuit events
dv/dt ruggedness	50 V/ns - prevents spurious turn-on in high-noise bridge-leg configurations without snubbers
T_J max	150 °C - supports compact heatsink design in sealed industrial enclosures with limited airflow

Pinout & Package

IPAK (TO-251) package: 3-pin surface-mount variant with exposed drain tab (pin 2) for thermal and electrical connection; compact footprint (6.1 × 6.6 × 16.5 mm) and low R_thJC (1.14 °C/W) enable high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain (exposed metal pad)	Primary heat path to PCB copper pour; electrically connected to drain node-requires isolation from other layers unless referenced to high-side potential
G (Pin 1)	Gate	High-impedance control terminal; Zener-protected to ±25 V-permits direct microcontroller GPIO drive with series resistor only
S (Pin 3)	Source	Reference node for gate drive and current sensing; connects to source of high-side switch or low-side return path in half-bridge

Key Features

Feature	Design Value
MDmesh M2 superjunction structure	Delivers 350 mΩ typ. R_DS(on) at 600 V-22% lower than prior-generation M1 devices at same die size
Low C_oss profile (32 pF typ.)	Reduces turn-on energy loss by >35% vs. standard 600 V MOSFETs, critical for >200 kHz operation
100% unclamped inductive avalanche tested	Guarantees robustness under worst-case hard-switching faults without external clamping circuits
Zener-protected gate	Eliminates need for external gate protection diodes-reduces BOM count and layout area in space-constrained designs
Optimized body diode (trr = 297 ns)	Enables efficient synchronous rectification and reduces reverse recovery loss in flyback and LLC secondaries

Applications

Industrial SMPS

PFC Boost Stage

Use Scenario: 1–3 kW open-frame switch-mode power supply for PLCs and motor drives.

IC Role / Device Role / Timing Role: High-side switching element in active clamp forward or asymmetrical half-bridge topology.

Use Value: Low Q_g and C_oss eq. reduce driver loss and improve light-load efficiency by 1.2% over STP13N60M2.

Use Scenario: Continuous conduction mode (CCM) boost converter in 3-phase rectified input systems.

IC Role / Device Role / Timing Role: Main switching FET handling 11 A peak current at 65–100 kHz with 400–450 V DC bus.

Use Value: Avalanche rating (125 mJ) absorbs line surges without derating-extends MTBF beyond IEC 61000-4-5 Level 4.

Auxiliary Power Supply

UPS Inverter Stage

Use Scenario: 24 V/2 A standby supply derived from main DC bus in telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side switch in self-oscillating flyback operating at 250 kHz.

Use Value: Fast trr (297 ns) and low Q_rr (2.8 µC) cut diode recovery loss by 40%, enabling smaller output filter caps.

Use Scenario: Half-bridge leg in online double-conversion UPS delivering clean 230 VAC output.

IC Role / Device Role / Timing Role: Low-side switch subjected to high di/dt and shoot-through risk during PWM transitions.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering-eliminates need for negative gate voltage biasing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N60M2	Same die, TO-220 package; R_thJA = 62 °C/W vs. 100 °C/W for IPAK; no exposed tab	Better thermal dissipation in forced-air environments; unsuitable for SMT-only assembly lines	Select when board-level airflow ≥2 m/s is guaranteed and through-hole mounting is acceptable
IPP60R190C7	Infineon CoolMOS™ C7; 190 mΩ @ 600 V, higher Q_g (33 nC); no integrated Zener	Lower conduction loss but requires external gate protection and larger driver; tighter V_GS(th) tolerance	Prefer for ultra-high-efficiency 500 kHz+ designs where gate drive overhead is managed separately

Compared with STP13N60M2 and IPP60R190C7, STW13N60M2 uniquely balances SMT compatibility, integrated gate protection, and mid-range R_DS(on)/Q_g trade-off-making it optimal for cost-sensitive industrial power supplies requiring rapid time-to-market and simplified qualification.

Availability

STW13N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, PFC boost stages, auxiliary power supplies, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

The MDmesh™ M2 product line targets high-efficiency AC-DC and DC-DC conversion, emphasizing ruggedness, low-loss switching, and ease of integration in industrial-grade power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW13N60M2 supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9368 Rev 6. This derating reflects thermal limits of the IPAK package and must be verified against actual PCB copper area and ambient conditions using R_thJC = 1.14 °C/W.

Does STW13N60M2 include an integrated body diode, and what are its recovery characteristics?

Yes-it features a monolithic source-drain diode with typical trr = 297 ns and Q_rr = 2.8 µC at T_J = 25 °C (Table 7). Recovery performance degrades moderately at 150 °C (trr = 394 ns), making it suitable for hard-switched flyback and moderate-frequency LLC, but not ultra-fast synchronous rectification.

Can STW13N60M2 replace STU13N60M2 in existing designs?

Yes-STW13N60M2 and STU13N60M2 share identical electrical specs, thermal data, and pinout, differing only in packaging: STU uses IPAK (TO-251) with leaded gull-wing leads, while STW uses IPAK (TO-251) with J-bend leads. Both are RoHS-compliant and functionally interchangeable in SMT assembly.

Is gate resistive damping required for reliable operation?

A gate resistor (typically 10–47 Ω) is recommended to damp ringing and limit peak gate current, especially given the low Q_g (17 nC) and fast switching (tr = 10 ns). The Zener-protected gate eliminates need for external TVS, but damping remains essential to prevent oscillation-induced EMI and gate oxide stress.

STW13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW13N60M2 FAQ

1.How can I place an order for STW13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW13N60M2 reliable?

The price and inventory of STW13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW13N60M2 is usually 5 days.

3.What payment methods are accepted for STW13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW13N60M2?

STW13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW13N60M2?

For technical support, including STW13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW13N60M2 requirements.

6.How does Aetrix verify that STW13N60M2 is sourced from the original manufacturer or authorized distributors?

All STW13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW13N60M2 meets industry standards.

7.What is the process for return or replacement of STW13N60M2?

All STW13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW13N60M2 part is unused and in its original packaging.

Return procedure for STW13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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