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Vishay Siliconix SUA70090E-E3

Part No.:
SUA70090E-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSUA70090E-E3.pdf
Description:
MOSFET N-CH 100V 42.8A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,480

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Product details

Overview

SUA70090E-E3 from Vishay Siliconix is an N-channel 100 V (D-S) power MOSFET in a Thin-Lead TO-220 FULLPAK package, rated for 42.8 A continuous drain current at TJ = 150 °C, with RDS(on) = 0.0093 Ω at VGS = 10 V and Qg = 33 nC - optimized for high-efficiency secondary synchronous rectification in AC/DC power supplies.

For engineers reviewing the SUA70090E-E3 datasheet, SUA70090E-E3 pinout, SUA70090E-E3 application, or SUA70090E-E3 equivalent, this device delivers low conduction loss, fast switching via Qgd/Qgs < 1 ratio, and robust avalanche energy rating (EAS = 80 mJ), supporting design of compact, thermally constrained DC/DC converters and motor drive switches.

Technical Context

This ThunderFET® MOSFET employs planar silicon technology with fully characterized gate charge profile (Qg = 33 nC, Qgd = 7.5 nC, Qgs = 8.8 nC) and tightly controlled RDS(on) distribution (0.0077–0.0093 Ω at VGS = 10 V). Its 100 % Rg and UIS testing ensures gate integrity and ruggedness under transient stress.

The device features a body diode with VSD = 0.8–1.5 V at IF = 10 A and trr = 77–116 ns, enabling efficient freewheeling in hard-switched topologies. Thermal resistance RthJC = 3.5 °C/W supports high-power density mounting on FR4 PCBs with minimal heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - supports input voltage rails up to 85 V DC in offline SMPS and 48 V bus systems without derating.
RDS(on) max 0.0093 Ω at VGS = 10 V - enables ≤ 4 W conduction loss at 20 A, critical for thermal management in enclosed power tools.
ID continuous 42.8 A at TC = 25 °C - sustains high-current motor drive pulses without external heatsink when mounted on 1"² FR4 PCB.
Qg 33 nC - reduces gate drive power and allows use of low-cost, low-current drivers in 100–500 kHz DC/DC converters.
EAS 80 mJ - withstands repetitive inductive switching surges in motor control H-bridges without failure.
tr/tf 27/45 ns - minimizes switching transition losses and EMI generation in high-frequency synchronous rectifiers.
VGS(th) 2–4 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers in isolated gate-drive circuits.

Pinout & Package

Package: Thin-Lead TO-220 FULLPAK - 3-pin through-hole package with exposed drain tab for direct thermal coupling to heatsink or copper pour; lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current path output / heat sink interface Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits; primary thermal path to PCB or heatsink.
Source Reference node for gate drive and current sensing Low-inductance return path; used for Kelvin source connection in precision current monitoring; ties to power ground plane.
Gate Control terminal for channel modulation High-impedance input requiring <3.5 Ω series gate resistor to damp ringing; sensitive to ESD (±20 V absolute max).

Key Features

Feature Design Value
Qgd/Qgs < 1 Reduces Miller-induced shoot-through risk and improves controllability during hard switching in half-bridge configurations.
100 % Rg tested Guarantees gate resistance between 0.7–7 Ω, ensuring predictable gate drive timing and minimizing layout sensitivity.
100 % UIS tested Validates unclamped inductive switching capability up to 40 A and 80 mJ, eliminating need for external snubbers in motor drives.
ThunderFET® architecture Optimized cell layout and termination reduce RDS(on) × Qg figure-of-merit to 307 Ω·nC, improving efficiency in 100–300 kHz converters.
Body diode trr 77 ns typical reverse recovery time enables clean commutation in synchronous buck converters without cross-conduction penalties.

Applications

Power Supply Secondary Rectification Brushless DC Motor Drive

Use Scenario: Used as synchronous rectifier in LLC resonant converter secondary side delivering 12 V/30 A output.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce conduction loss and improve full-load efficiency by ≥1.2 %.

Use Value: RDS(on) = 0.0093 Ω limits I²R loss to 8.4 W at 30 A, enabling >94 % efficiency at 230 VAC input without forced air cooling.

Use Scenario: High-side switch in 3-phase inverter driving 400 W cordless power tool motor.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in leg configuration, driven by isolated gate driver with 10 V gate bias.

Use Value: Qg = 33 nC allows 200 kHz PWM operation with <1.5 W gate drive loss; avalanche rating handles motor back-EMF transients.

Industrial DC/DC Converter Photovoltaic Inverter Auxiliary Supply

Use Scenario: Primary-side switch in 48 V input, 12 V output non-isolated buck converter for PLC I/O module.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch operating at 300 kHz with synchronous rectification on secondary.

Use Value: RthJC = 3.5 °C/W and 42.8 A rating allow full load operation on 2 oz copper without heatsink, reducing BOM cost and footprint.

Use Scenario: Isolated auxiliary supply switch in string-level PV inverter providing 15 V bias for gate drivers and sensors.

IC Role / Device Role / Timing Role: 100 V-rated MOSFET handling 80 V DC link transients during grid fault conditions.

Use Value: VDS = 100 V with 150 °C TJmax ensures safe operation under 1.2× nominal DC bus overvoltage events per IEC 62109.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF3205PBF RDS(on) = 0.008 Ω @ 10 V but Qg = 71 nC; TO-220 (standard lead), not FULLPAK; RthJC = 3.0 °C/W. Higher gate charge increases driver loss and limits max switching frequency to ~150 kHz vs. 300 kHz for SUA70090E-E3. Prefer SUA70090E-E3 where high-frequency efficiency and thermal performance on thin PCBs are prioritized.
STP110N10F7 RDS(on) = 0.0075 Ω @ 10 V, Qg = 42 nC; TO-220FP package; lower VGS(th) (1–2.5 V); no UIS rating published. Lacks documented avalanche ruggedness; unsuitable for motor drive inductive loads without external clamping. Prefer SUA70090E-E3 for applications requiring guaranteed UIS performance and stable threshold across temperature.

Compared with IRF3205PBF and STP110N10F7, SUA70090E-E3 offers superior Qgd/Qgs ratio for cleaner switching, verified UIS endurance, and thinner lead form factor for improved PCB thermal relief - making it optimal for space- and efficiency-critical 200–500 kHz power stages.

Availability

SUA70090E-E3 is available at Aetrix Electronics and suitable for power supply secondary rectification, brushless DC motor drive, and industrial DC/DC converter applications requiring stable component supply, Pb-free compliance, and long-term industrial lifecycle support.

Supply support for SUA70090E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SUA70090E-E3 belongs to Vishay's ThunderFET® power MOSFET family, engineered specifically for high-efficiency, high-current switching in compact power conversion systems where thermal and switching loss optimization are critical.

FAQ

What is the maximum continuous drain current rating for SUA70090E-E3 at 70 °C case temperature?

The SUA70090E-E3 supports 34.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Thin-Lead TO-220 FULLPAK package under sustained high-power operation and must be applied when ambient or heatsink conditions elevate case temperature above 25 °C.

Does SUA70090E-E3 have a specified reverse recovery time for its integrated body diode?

Yes, SUA70090E-E3 specifies trr = 77–116 ns (typ./max.) under test conditions of IF = −10 A and dI/dt = 100 A/μs. This value is measured directly on the intrinsic body diode and is critical for evaluating commutation behavior in synchronous rectifier and half-bridge applications.

Is SUA70090E-E3 suitable for use with 5 V gate drive voltage?

SUA70090E-E3 has a gate threshold voltage range of 2–4 V and delivers RDS(on) = 0.0100 Ω at VGS = 7.5 V and ID = 15 A. While it will turn on with 5 V drive, full enhancement requires ≥7.5 V for specified low RDS(on); using 5 V results in higher conduction loss and reduced current capability.

What is the avalanche energy rating of SUA70090E-E3, and under what conditions is it validated?

SUA70090E-E3 is rated for single-pulse avalanche energy EAS = 80 mJ with L = 0.1 mH, tested per JEDEC JESD24-1. This rating is confirmed by 100 % UIS testing during production, ensuring each unit can safely absorb inductive energy without degradation in motor drive or relay-switching applications.

How does the Thin-Lead TO-220 FULLPAK package of SUA70090E-E3 differ from standard TO-220 in thermal performance?

The Thin-Lead TO-220 FULLPAK package of SUA70090E-E3 reduces leadframe thickness to improve thermal coupling between die and PCB copper, achieving RthJC = 3.5 °C/W - identical to standard TO-220 - but with enhanced solder joint reliability and lower parasitic inductance due to shorter internal leads and full plastic encapsulation over the tab.

SUA70090E-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
ThunderFET®
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
42.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
35.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220 Full Pack

SUA70090E-E3 FAQ

1.How can I place an order for SUA70090E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUA70090E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUA70090E-E3 reliable?

The price and inventory of SUA70090E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUA70090E-E3 is usually 5 days.

3.What payment methods are accepted for SUA70090E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUA70090E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUA70090E-E3?

SUA70090E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUA70090E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUA70090E-E3?

For technical support, including SUA70090E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUA70090E-E3 requirements.

6.How does Aetrix verify that SUA70090E-E3 is sourced from the original manufacturer or authorized distributors?

All SUA70090E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUA70090E-E3 meets industry standards.

7.What is the process for return or replacement of SUA70090E-E3?

All SUA70090E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUA70090E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUA70090E-E3 part is unused and in its original packaging.

Return procedure for SUA70090E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUA70090E-E3 Tags

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