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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUB75P03-07-E3

Name: SUB75P03-07-E3
Brand: Vishay Siliconix
SKU: SUB75P03-07-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUB75P03-07-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SUB75P03-07-E3.pdf

Description:: MOSFET P-CH 30V 75A TO263

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Product details

Overview

SUB75P03-07-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.007 Ω R_DS(on) at V_GS = -10 V, and ±75 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and features drain-connected tab in TO-263 (D²PAK) package, optimized for high-current DC-DC converter synchronous rectification and motor drive H-bridge high-side switching.

For engineers reviewing the SUB75P03-07-E3 datasheet, SUB75P03-07-E3 pinout, SUB75P03-07-E3 application, or SUB75P03-07-E3 equivalent, key selection criteria include its low R_DS(on) at -4.5 V gate drive, robust avalanche energy rating (180 mJ), and thermal resistance (R_thJC = 0.8 °C/W) enabling high-power density designs without forced cooling.

Technical Context

This device uses planar trench-gate silicon technology with optimized channel geometry to achieve stable R_DS(on) across temperature and gate voltage. Its gate threshold voltage range (-1 V to -3 V) ensures reliable turn-on with standard logic-level controllers while maintaining noise immunity.

The integrated body diode supports bidirectional current flow in bridge configurations, with measured t_rr of 55–100 ns and Q_rr of 0.07–0.25 µC under specified dI/dt conditions. The SOA curve defines safe single-pulse operation up to 100 V × 75 A for 10 ms, limited by R_DS(on) at V_GS ≥ -10 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche conduction; defines maximum bus voltage in buck converters or half-bridge switches.
R_DS(on) @ V_GS = -10 V	0.007 Ω - Enables ≤ 15.8 W conduction loss at 75 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = -4.5 V	0.010 Ω - Supports direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry.
I_D (continuous, T_C = 25 °C)	±75 A - Package-limited current capacity; requires heatsinking above ~40 A in ambient air.
E_AR	180 mJ - Guaranteed avalanche energy enables robustness against inductive load switching transients without external snubbers.
R_thJC	0.8 °C/W - Junction-to-case thermal resistance allows direct mounting to copper heatsinks for high-efficiency thermal management.
Q_g	160–240 nC - Total gate charge determines required driver peak current and switching loss trade-off in PWM applications.

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, drain-connected tab for enhanced thermal transfer and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main power output terminal	Electrically connected to drain; must be soldered to large copper pour for thermal and current handling.
Pin 1 (Source)	Reference node for gate control	Common return path for load current; ties to system ground or floating rail in high-side configuration.
Pin 3 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; driven via gate resistor to limit dV/dt and oscillation.

Key Features

Feature	Design Value
Pb-free RoHS-compliant termination	Meets Directive 2002/95/EC; eliminates lead-based solder compatibility concerns in modern assembly lines.
175 °C maximum junction temperature	Enables operation in automotive engine bay or industrial motor control enclosures without derating at full current.
Low Q_gd/Q_g ratio (≈0.125)	Reduces Miller-induced shoot-through risk in synchronous rectifiers and improves hard-switching efficiency.
Drain-connected tab	Provides lowest possible thermal path from die to heatsink; eliminates need for insulating pads in many designs.
Specified R_DS(on) at 125 °C and 175 °C	Allows accurate conduction loss calculation across full operating temperature range without interpolation.

Applications

DC-DC Synchronous Rectifier	Motor Drive High-Side Switch
Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converter for telecom power supplies. IC Role / Device Role: Low-loss synchronous rectifier replacing Schottky diode to improve efficiency >2 % at full load. Use Value: 0.007 Ω R_DS(on) reduces conduction loss to <1.2 W vs. 3.5 W typical for 40 V Schottky, directly lowering thermal design burden.	Use Scenario: Upper switch in 24 V brushed DC motor H-bridge driving automotive HVAC blower or industrial actuator. IC Role / Device Role: High-side P-channel MOSFET controlled by bootstrap-free gate driver. Use Value: -3 V V_GS(th) ensures clean turn-on with 5 V logic; drain-connected tab simplifies heatsink isolation in compact motor modules.
Hot-Swap ORing Controller	Power Distribution Switch
Use Scenario: ORing diode replacement in redundant 48 V server power distribution units with automatic failover. IC Role / Device Role: Back-to-back configured P-MOSFET providing reverse-current blocking and low-loss conduction path. Use Value: 180 mJ avalanche rating withstands bus fault transients during hot-insertion; 0.010 Ω R_DS(on) at -4.5 V enables direct microcontroller control.	Use Scenario: Main power switch in programmable logic controller (PLC) I/O module protecting 24 V field wiring from short circuits. IC Role / Device Role: Load switch with overcurrent and thermal shutdown capability via external sense resistor feedback. Use Value: 75 A continuous rating supports multiple parallel outputs; 0.8 °C/W R_thJC enables precise thermal foldback using case temperature monitoring.

DC-DC Synchronous Rectifier

Motor Drive High-Side Switch

Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converter for telecom power supplies.

IC Role / Device Role: Low-loss synchronous rectifier replacing Schottky diode to improve efficiency >2 % at full load.

Use Value: 0.007 Ω R_DS(on) reduces conduction loss to <1.2 W vs. 3.5 W typical for 40 V Schottky, directly lowering thermal design burden.

Use Scenario: Upper switch in 24 V brushed DC motor H-bridge driving automotive HVAC blower or industrial actuator.

IC Role / Device Role: High-side P-channel MOSFET controlled by bootstrap-free gate driver.

Use Value: -3 V V_GS(th) ensures clean turn-on with 5 V logic; drain-connected tab simplifies heatsink isolation in compact motor modules.

Hot-Swap ORing Controller

Power Distribution Switch

Use Scenario: ORing diode replacement in redundant 48 V server power distribution units with automatic failover.

IC Role / Device Role: Back-to-back configured P-MOSFET providing reverse-current blocking and low-loss conduction path.

Use Value: 180 mJ avalanche rating withstands bus fault transients during hot-insertion; 0.010 Ω R_DS(on) at -4.5 V enables direct microcontroller control.

Use Scenario: Main power switch in programmable logic controller (PLC) I/O module protecting 24 V field wiring from short circuits.

IC Role / Device Role: Load switch with overcurrent and thermal shutdown capability via external sense resistor feedback.

Use Value: 75 A continuous rating supports multiple parallel outputs; 0.8 °C/W R_thJC enables precise thermal foldback using case temperature monitoring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω @ -10 V; higher threshold (-2 to -4 V); TO-220 package only	Larger footprint and higher R_thJA (62.5 °C/W) limits power density in space-constrained designs	Prefer SUB75P03-07-E3 when board area, thermal performance, or surface-mount assembly is prioritized
STP75NF03L	R_DS(on) = 0.008 Ω @ -10 V; N-channel; requires high-side gate driver or level shifter	Not directly substitutable without circuit redesign due to polarity mismatch and gate drive complexity	Choose SUB75P03-07-E3 for simplified high-side control where gate drive simplicity outweighs marginal R_DS(on) gain

Compared with IRF4905PBF and STP75NF03L, the SUB75P03-07-E3 delivers superior thermal performance (0.8 °C/W vs. 1.5–2.0 °C/W), lower gate charge (160–240 nC vs. 190–270 nC), and native surface-mount compatibility-making it optimal for high-reliability, high-power-density applications where layout efficiency and thermal headroom are critical.

Availability

SUB75P03-07-E3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and PLC power distribution systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SUB75P03-07-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The SUB75P03-07-E3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered specifically for high-current, high-temperature switching in automotive, industrial, and computing power systems where low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for SUB75P03-07-E3 at 125 °C case temperature?

The SUB75P03-07-E3 supports -65 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be validated against actual PCB layout and heatsinking. The SUB75P03-07-E3 maintains 0.010 Ω R_DS(on) at this condition, ensuring predictable conduction loss.

Does SUB75P03-07-E3 have a built-in ESD protection diode on the gate?

No, the SUB75P03-07-E3 does not integrate gate ESD protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and transient gate stress must be managed externally using series resistors and/or TVS clamping per Vishay Application Note AN8001. This design preserves gate charge characteristics critical for fast switching in the SUB75P03-07-E3.

Can SUB75P03-07-E3 be used in linear mode (ohmic region) for precision current regulation?

The SUB75P03-07-E3 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area curve defines only pulsed and DC boundaries up to 100 V × 75 A, with no SOA data provided for extended linear bias. For precision current regulation, dedicated lateral DMOS or bipolar devices with defined linear SOA should be selected instead of the SUB75P03-07-E3.

What is the typical reverse recovery time (t_rr) of the body diode in SUB75P03-07-E3?

The body diode of the SUB75P03-07-E3 exhibits a typical reverse recovery time (t_rr) of 55 ns under test conditions of I_F = -75 A and dI/dt = 100 A/µs. Measured values range from 55 ns to 100 ns depending on junction temperature and di/dt slope. This performance is documented in the "Source-Drain Diode Ratings" section of the SUB75P03-07-E3 datasheet.

Is SUB75P03-07-E3 qualified for automotive applications per AEC-Q101?

No, the SUB75P03-07-E3 is not AEC-Q101 qualified. It is rated for industrial temperature range (-55 °C to +175 °C) but lacks the stress testing, failure analysis, and documentation required for automotive qualification. For automotive use, Vishay offers the AEC-Q101-qualified SiHFR030-GE3 or SiHP030-GE3 as alternatives to the SUB75P03-07-E3.

SUB75P03-07-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 187W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SUB75P03-07-E3 FAQ

1.How can I place an order for SUB75P03-07-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUB75P03-07-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUB75P03-07-E3 reliable?

The price and inventory of SUB75P03-07-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUB75P03-07-E3 is usually 5 days.

3.What payment methods are accepted for SUB75P03-07-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUB75P03-07-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUB75P03-07-E3?

SUB75P03-07-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUB75P03-07-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUB75P03-07-E3?

For technical support, including SUB75P03-07-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUB75P03-07-E3 requirements.

6.How does Aetrix verify that SUB75P03-07-E3 is sourced from the original manufacturer or authorized distributors?

All SUB75P03-07-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUB75P03-07-E3 meets industry standards.

7.What is the process for return or replacement of SUB75P03-07-E3?

All SUB75P03-07-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUB75P03-07-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUB75P03-07-E3 part is unused and in its original packaging.

Return procedure for SUB75P03-07-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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