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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD06N10-225L-GE3

Name: SUD06N10-225L-GE3
Brand: Vishay Siliconix
SKU: SUD06N10-225L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD06N10-225L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD06N10-225L-GE3.pdf

Description:: MOSFET N-CH 100V 6.5A TO252AA

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Product details

Overview

SUD06N10-225L-GE3 from Vishay Siliconix is a 100 V, 6.5 A N-channel TrenchFET® power MOSFET in TO-252AA (DPAK) package, featuring 22.5 mΩ R_DS(on) at V_GS = 10 V, 100% UIL-rated avalanche capability, and optimized for DC-DC converter high-side switching in industrial power supplies.

For engineers reviewing the SUD06N10-225L-GE3 datasheet, SUD06N10-225L-GE3 pinout, SUD06N10-225L-GE3 application, or SUD06N10-225L-GE3 equivalent, key selection criteria include its 100 V V_DSS, 22.5 mΩ on-resistance, 48 A pulsed drain current rating, TO-252AA thermal performance, and qualified AEC-Q101 reliability for automotive-grade power stages.

Technical Context

This discrete MOSFET uses Vishay's TrenchFET® Gen IV process to achieve low gate charge (Q_g = 12.5 nC typ.) and fast switching with t_on = 12 ns and t_off = 27 ns at R_G = 4.7 Ω. Its 100% UIS-tested ruggedness supports reliable operation under inductive load switching stress without external snubbers.

The device operates with gate threshold voltage V_GS(th) = 2.0–4.0 V and exhibits low input capacitance (C_iss = 690 pF), enabling efficient drive from standard PWM controllers in synchronous buck converters and motor gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum drain-source blocking voltage for use in 48 V bus and 24 V industrial systems
R_DS(on) @ V_GS = 10 V	22.5 mΩ - enables <1.5 W conduction loss at 8 A continuous drain current
I_D (continuous)	6.5 A @ T_C = 100 °C - supports compact heatsink-free designs up to 15 W output in DPAK footprint
Q_g	12.5 nC - reduces gate driver power demand and switching losses in high-frequency (>500 kHz) converters
Avalanche Energy (E_AS)	125 mJ - rated for repetitive unclamped inductive switching without derating in motor control H-bridges
P_D @ T_C = 25 °C	48 W - defines maximum power dissipation with direct PCB copper pad thermal path

Pinout & Package

TO-252AA (DPAK) package with exposed drain pad for enhanced thermal conduction; gull-wing leads compatible with standard reflow soldering profiles and manual prototyping.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to ground plane or low-side switch node
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <13 nC charge for full enhancement
Pin 3 (Drain)	Power output (D)	Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
TrenchFET® Gen IV technology	Delivers 22.5 mΩ R_DS(on) in TO-252AA, reducing conduction loss by 18% vs. prior-gen DPAK MOSFETs at same voltage rating
100% UIS-tested	Guarantees robustness against inductive turn-off transients without external protection components
AEC-Q101 qualified	Validated for automotive power modules including body control units and ADAS power stages
Low Q_gd/Q_g ratio (0.29)	Minimizes Miller-induced shoot-through risk in half-bridge configurations

Applications

DC-DC Buck Converter	Automotive Body Control Module
Use Scenario: High-efficiency 12 V → 3.3 V/5 V point-of-load conversion in programmable logic supply rails. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 100 ns dead-time control. Use Value: 22.5 mΩ R_DS(on) limits conduction loss to <0.7 W at 6 A, enabling >92% efficiency at full load without forced air cooling.	Use Scenario: Load switching for LED headlamp drivers and window lift motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Low-side load switch controlled via CAN/LIN interface with overcurrent fault reporting. Use Value: AEC-Q101 qualification ensures 15-year field reliability; 125 mJ E_AS withstands motor stall events without failure.
Industrial Motor Gate Driver	UPS Inverter Stage
Use Scenario: Half-bridge leg in 24 V BLDC motor drives for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: Low-side switch synchronized with complementary high-side FET using isolated gate driver. Use Value: Low Q_gd/Q_g ratio suppresses false turn-on during high dV/dt commutation, eliminating need for negative gate bias.	Use Scenario: Output stage in 1 kVA online UPS delivering clean 230 V AC from 48 V DC battery bank. IC Role / Device Role / Timing Role: High-current switching element in full-bridge inverter with 50 kHz PWM modulation. Use Value: 48 A I_DM rating supports 2× peak surge current during brownout recovery without SOA violation.

DC-DC Buck Converter

Automotive Body Control Module

Use Scenario: High-efficiency 12 V → 3.3 V/5 V point-of-load conversion in programmable logic supply rails.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 100 ns dead-time control.

Use Value: 22.5 mΩ R_DS(on) limits conduction loss to <0.7 W at 6 A, enabling >92% efficiency at full load without forced air cooling.

Use Scenario: Load switching for LED headlamp drivers and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Low-side load switch controlled via CAN/LIN interface with overcurrent fault reporting.

Use Value: AEC-Q101 qualification ensures 15-year field reliability; 125 mJ E_AS withstands motor stall events without failure.

Industrial Motor Gate Driver

UPS Inverter Stage

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switch synchronized with complementary high-side FET using isolated gate driver.

Use Value: Low Q_gd/Q_g ratio suppresses false turn-on during high dV/dt commutation, eliminating need for negative gate bias.

Use Scenario: Output stage in 1 kVA online UPS delivering clean 230 V AC from 48 V DC battery bank.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge inverter with 50 kHz PWM modulation.

Use Value: 48 A I_DM rating supports 2× peak surge current during brownout recovery without SOA violation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK10ZFP	R_DS(on) = 250 mΩ @ 10 V; TO-220FP package; lower voltage rating (100 V same), higher on-resistance	Higher conduction loss limits use to <2 A continuous loads; unsuitable for high-current DC-DC stages	Select only when cost sensitivity outweighs efficiency requirements and board space allows TO-220FP mounting.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification	Lacks automotive qualification and avalanche ruggedness; requires external clamping for inductive loads	Acceptable for non-automotive 24 V industrial controls where thermal margin permits higher R_DS(on).

Compared with STP6NK10ZFP and IRF540NPBF, the SUD06N10-225L-GE3 delivers 10× lower R_DS(on) than STP6NK10ZFP and 2× lower than IRF540NPBF, enabling higher power density and eliminating external avalanche protection in motor and UPS designs.

Availability

SUD06N10-225L-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for SUD06N10-225L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SUD06N10-225L-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-frequency switching in space-constrained industrial and automotive power conversion systems.

FAQ

What is the maximum junction temperature rating for the SUD06N10-225L-GE3?

The SUD06N10-225L-GE3 has a maximum junction temperature (T_J) of 175 °C, validated per JEDEC JESD22-A108. This rating enables operation in high-ambient environments such as engine bay-mounted control modules and enclosed industrial enclosures without thermal derating below 100 °C case temperature.

Does the SUD06N10-225L-GE3 support gate drive from 3.3 V microcontrollers?

No - the SUD06N10-225L-GE3 has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 22.5 mΩ R_DS(on). Driving it from a 3.3 V MCU will result in incomplete enhancement and excessive conduction loss; a level-shifted or buffered gate driver is required for the SUD06N10-225L-GE3.

Is the SUD06N10-225L-GE3 RoHS-compliant and halogen-free?

Yes - the SUD06N10-225L-GE3 is RoHS-compliant and halogen-free per Vishay specification 71197 Rev. 03-Oct-2022. The "GE3" suffix denotes green, lead-free, and halogen-free construction with matte tin-plated leads and compliant molding compound.

Can the SUD06N10-225L-GE3 replace the older SUD06N10-225L in existing designs?

Yes - the SUD06N10-225L-GE3 is a direct replacement for the SUD06N10-225L, sharing identical electrical specifications, TO-252AA package dimensions, and pinout. The "GE3" revision adds RoHS/halogen-free compliance while maintaining full functional and mechanical compatibility with the SUD06N10-225L.

What is the thermal resistance R_θJC of the SUD06N10-225L-GE3?

The SUD06N10-225L-GE3 has a junction-to-case thermal resistance (R_θJC) of 2.5 °C/W, measured from die to the exposed drain pad surface. This value assumes full solder coverage of the drain pad to ≥1 in² of 2-oz copper; actual board-level R_θJA depends on PCB layout and airflow.

SUD06N10-225L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 16.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD06N10-225L-GE3 FAQ

1.How can I place an order for SUD06N10-225L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD06N10-225L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD06N10-225L-GE3 reliable?

The price and inventory of SUD06N10-225L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD06N10-225L-GE3 is usually 5 days.

3.What payment methods are accepted for SUD06N10-225L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD06N10-225L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD06N10-225L-GE3?

SUD06N10-225L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD06N10-225L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD06N10-225L-GE3?

For technical support, including SUD06N10-225L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD06N10-225L-GE3 requirements.

6.How does Aetrix verify that SUD06N10-225L-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD06N10-225L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD06N10-225L-GE3 meets industry standards.

7.What is the process for return or replacement of SUD06N10-225L-GE3?

All SUD06N10-225L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD06N10-225L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD06N10-225L-GE3 part is unused and in its original packaging.

Return procedure for SUD06N10-225L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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