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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD08P06-155L-E3

Name: SUD08P06-155L-E3
Brand: Vishay Siliconix
SKU: SUD08P06-155L-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD08P06-155L-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD08P06-155L-E3.pdf

Description:: MOSFET P-CH 60V 8.4A TO252

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Product details

Overview

SUD08P06-155L-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -60 V drain-source voltage, 0.155 Ω typical r_DS(on) at V_GS = -10 V and -5 A, with 175 °C maximum junction temperature and TO-252 (DPAK) surface-mount package. It serves as a high-reliability load switch in industrial DC power rails and reverse-polarity protection circuits.

For engineers reviewing the SUD08P06-155L-E3 datasheet, SUD08P06-155L-E3 pinout, SUD08P06-155L-E3 application, or SUD08P06-155L-E3 equivalent, key selection criteria include its -60 V V_DS, 0.155 Ω r_DS(on) at -10 V, 12.5 nC total gate charge, -8.4 A continuous drain current at T_C = 25 °C, and 175 °C thermal rating-critical for high-temperature automotive and industrial switching designs.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (12.5 nC typ.) and low Crss (40 pF). Its P-channel topology enables high-side switching without level-shifting circuitry in 12–48 V DC systems.

The MOSFET features an integrated source-drain diode with V_SD = -0.9 to -1.3 V at -2 A and trr = 50–80 ns, supporting synchronous rectification and flyback recovery in compact power converters where thermal robustness up to 175 °C is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - supports 48 V nominal bus systems with 20 % margin for transients
r_DS(on)	0.155 Ω @ V_GS = -10 V, I_D = -5 A - enables ≤0.65 W conduction loss at 8 A
I_D (cont)	-8.4 A @ T_C = 25 °C - delivers full-rated current with standard 1" × 1" FR-4 PCB copper area
Q_g	12.5 nC typ. - allows efficient gate drive with <1 µs turn-on delay using 2.5 Ω R_G
T_J(max)	175 °C - qualified for under-hood automotive and industrial environments without derating
R_thJC	5 °C/W typ. - ensures ≤40 °C junction-to-case rise at 8 A, simplifying heatsink design

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected-to-tab for enhanced thermal transfer to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Reference node for gate control and current return path	Connected to system ground or negative rail; defines V_GS reference
Gate (G)	Control electrode for channel inversion	Requires -10 V relative to source to fully enhance; ±20 V absolute max rating
Drain (D)	Main current-carrying terminal, tied to tab	Tab must be electrically isolated from other layers unless used as heatsink; connects to load or supply rail

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.155 Ω r_DS(on) in TO-252, reducing conduction loss vs. planar alternatives
175 °C rated junction temperature	Enables operation in sealed enclosures or high-ambient zones without forced air cooling
Low Q_gd/Q_g ratio (3.2/12.5 nC)	Improves hard-switching EMI profile and reduces Miller-induced shoot-through risk
Integrated source-drain diode	V_SD = -0.9 V @ -2 A enables efficient freewheeling in buck or reverse-battery protection

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Prevents damage when battery or power supply leads are accidentally reversed in 12–48 V industrial equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail. Use Value: Eliminates 0.7 V diode drop, saving >5 W at 8 A while maintaining fast fault response via gate control.	Use Scenario: Enables/disables power to downstream subsystems (e.g., sensors, actuators) in programmable logic controllers. IC Role / Device Role / Timing Role: High-side switch controlled by microcontroller GPIO with simple pull-up/pull-down network. Use Value: Supports hot-swap capability and inrush current limiting via slew-rate-controlled gate drive.
DC-DC Synchronous Rectifier	Automotive Body Control Module
Use Scenario: Replaces Schottky diode in secondary side of isolated flyback or forward converter for improved efficiency. IC Role / Device Role / Timing Role: Synchronously rectifies output current during low-side switch off-time. Use Value: Reduces conduction loss by 40 % vs. 40 V Schottky at 5 A, enabling smaller magnetics and higher power density.	Use Scenario: Controls power to lighting, window motors, or HVAC actuators in passenger vehicles. IC Role / Device Role / Timing Role: Robust load driver meeting AEC-Q101 stress requirements and operating up to 175 °C ambient. Use Value: Meets automotive thermal cycling and long-term reliability standards without external heatsinking.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Prevents damage when battery or power supply leads are accidentally reversed in 12–48 V industrial equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail.

Use Value: Eliminates 0.7 V diode drop, saving >5 W at 8 A while maintaining fast fault response via gate control.

Use Scenario: Enables/disables power to downstream subsystems (e.g., sensors, actuators) in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch controlled by microcontroller GPIO with simple pull-up/pull-down network.

Use Value: Supports hot-swap capability and inrush current limiting via slew-rate-controlled gate drive.

DC-DC Synchronous Rectifier

Automotive Body Control Module

Use Scenario: Replaces Schottky diode in secondary side of isolated flyback or forward converter for improved efficiency.

IC Role / Device Role / Timing Role: Synchronously rectifies output current during low-side switch off-time.

Use Value: Reduces conduction loss by 40 % vs. 40 V Schottky at 5 A, enabling smaller magnetics and higher power density.

Use Scenario: Controls power to lighting, window motors, or HVAC actuators in passenger vehicles.

IC Role / Device Role / Timing Role: Robust load driver meeting AEC-Q101 stress requirements and operating up to 175 °C ambient.

Use Value: Meets automotive thermal cycling and long-term reliability standards without external heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	Higher r_DS(on) (0.2 Ω), lower I_D (-19 A but at 100 °C), TO-220 package	Requires heatsink; unsuitable for space-constrained SMT layouts	Select when through-hole mounting and higher peak current are prioritized over thermal density
DMT6009LSD-13	Lower V_DS (-60 V same), lower r_DS(on) (0.09 Ω), same TO-252, but only rated to 150 °C	Limited to non-under-hood automotive or industrial use below 150 °C ambient	Select when lower conduction loss is critical and junction temperature stays ≤150 °C

Compared with IRF9540NPbF and DMT6009LSD-13, the SUD08P06-155L-E3 uniquely balances 175 °C operation, TO-252 footprint, and 0.155 Ω r_DS(on), making it optimal for thermally constrained yet high-reliability applications where extended temperature range is non-negotiable.

Availability

SUD08P06-155L-E3 is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, and DC-DC synchronous rectification requiring stable component supply across automotive, industrial control, and power infrastructure programs.

Supply support for SUD08P06-155L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal robustness.

The SUD08P06-155L-E3 belongs to Vishay's TrenchFET® P-channel power MOSFET family, engineered for high-efficiency, high-temperature switching in automotive body electronics and industrial power management.

FAQ

What is the maximum continuous drain current for SUD08P06-155L-E3 at 100 °C case temperature?

The SUD08P06-155L-E3 supports -6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limits and ensures safe operation within the 175 °C junction temperature ceiling. Designers must verify PCB copper area and airflow to maintain this rating in real-world conditions. The SUD08P06-155L-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 175 °C)".

Does SUD08P06-155L-E3 have a built-in ESD protection diode on the gate?

No, the SUD08P06-155L-E3 does not integrate gate ESD protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and transient gate stress must be managed externally using RC snubbers or TVS devices. This design preserves low input capacitance (C_iss = 450 pF) and fast switching. Always observe handling precautions per JEDEC JS-001 when prototyping with the SUD08P06-155L-E3.

Can SUD08P06-155L-E3 be used in linear mode (ohmic region) for analog current regulation?

The SUD08P06-155L-E3 is characterized for switching operation, not linear-mode analog regulation. Its Safe Operating Area curve shows limited DC capability above 10 V V_DS, and power dissipation rises rapidly outside pulsed conditions. For precision current control, dedicated current-source ICs or purpose-built linear MOSFETs with SOA guarantees are recommended instead of the SUD08P06-155L-E3.

What is the typical reverse recovery charge Q_rr of the body diode in SUD08P06-155L-E3?

The SUD08P06-155L-E3 body diode has a typical reverse recovery charge Q_rr of 100 nC, measured at I_F = -8 A and di/dt = 100 A/µs. This value impacts switching losses in synchronous rectifier configurations and should be included in loss calculations alongside t_rr (50–80 ns). The SUD08P06-155L-E3 specification sheet lists Q_rr in the "Source-Drain Diode Ratings" section.

Is SUD08P06-155L-E3 RoHS compliant and lead-free?

Yes, SUD08P06-155L-E3 is RoHS compliant and lead-free, as explicitly stated in the ordering information: "SUD08P06-155L-E3 (Lead (Pb)-free)". The "E3" suffix denotes Vishay's standard lead-free, halogen-free, and RoHS-compliant termination. Full compliance documentation is available under Vishay document number 73209.

SUD08P06-155L-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD08P06-155L-E3 FAQ

1.How can I place an order for SUD08P06-155L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD08P06-155L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD08P06-155L-E3 reliable?

The price and inventory of SUD08P06-155L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD08P06-155L-E3 is usually 5 days.

3.What payment methods are accepted for SUD08P06-155L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD08P06-155L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD08P06-155L-E3?

SUD08P06-155L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD08P06-155L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD08P06-155L-E3?

For technical support, including SUD08P06-155L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD08P06-155L-E3 requirements.

6.How does Aetrix verify that SUD08P06-155L-E3 is sourced from the original manufacturer or authorized distributors?

All SUD08P06-155L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD08P06-155L-E3 meets industry standards.

7.What is the process for return or replacement of SUD08P06-155L-E3?

All SUD08P06-155L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD08P06-155L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD08P06-155L-E3 part is unused and in its original packaging.

Return procedure for SUD08P06-155L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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