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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD15N15-95-BE3

Name: SUD15N15-95-BE3
Brand: Vishay Siliconix
SKU: SUD15N15-95-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD15N15-95-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD15N15-95-BE3.pdf

Description:: MOSFET N-CH 150V 15A DPAK

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Product details

Overview

SUD15N15-95-BE3 from Vishay Siliconix is an N-channel enhancement-mode TrenchFET® power MOSFET rated for 150 V drain-source voltage, 15 A continuous drain current at 175 °C junction temperature, and 0.095 Ω R_DS(on) at V_GS = 10 V. It serves as a primary-side switching device in offline AC/DC power supplies and DC-DC converters requiring high thermal robustness.

For engineers reviewing the SUD15N15-95-BE3 datasheet, SUD15N15-95-BE3 pinout, SUD15N15-95-BE3 application, or SUD15N15-95-BE3 equivalent, key selection criteria include its 175 °C rated junction temperature, TO-252 (DPAK) package with drain-connected tab for enhanced thermal transfer, and guaranteed 100 % gate resistance testing for consistent switching behavior.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and optimized gate charge (Q_g = 20–25 nC at V_DS = 75 V), enabling efficient hard-switching operation in high-frequency flyback and forward converters. Its 150 V V_DS rating supports 115/230 VAC universal input designs with sufficient margin against voltage transients.

The device features a source-drain diode with 15 A pulsed current capability and 55–85 ns reverse recovery time (trr), supporting synchronous rectification and freewheeling roles. Thermal resistance R_thJC of 2.0–2.4 °C/W enables direct heatsinking via the exposed drain tab in TO-252AA packaging.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports 115/230 VAC input with ≥2× safety margin against line surges in primary-side SMPS.
R_DS(on)	0.095 Ω @ V_GS = 10 V - Enables ≤1.4 W conduction loss at 15 A, reducing thermal load in compact power stages.
I_D (continuous)	15 A @ T_J = 175 °C - Rated for sustained operation under full-load conditions without derating in thermally managed layouts.
Q_g	20–25 nC - Low total gate charge minimizes driver power requirement and enables fast turn-on/turn-off (t_d(on) = 8–12 ns).
R_thJC	2.0–2.4 °C/W - Allows direct mounting to heatsink via drain tab, achieving >50 W power dissipation with modest thermal interface resistance.
V_GS(th)	2 V (min) - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.
trr	55–85 ns - Supports moderate-frequency freewheeling and reduces switching losses in discontinuous conduction mode (DCM) topologies.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires < ±20 V absolute max rating; 100 % R_g tested for predictable drive timing.
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.
D	Drain	Main high-voltage power path; electrically and thermally connected to exposed metal tab for efficient heat extraction.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced conduction and switching losses in high-efficiency SMPS.
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without forced air cooling or significant derating.
100 % R_g tested	Guarantees consistent gate drive requirements across production lots, simplifying driver IC selection and layout validation.
Drain-connected tab	Provides low-thermal-resistance path to PCB copper or external heatsink, supporting >50 W steady-state power dissipation.
Repetitive avalanche rated	Withstands 11.3 mJ per pulse (L = 0.1 mH), enhancing reliability during transient overvoltage events in unclamped topologies.

Applications

AC/DC Flyback Converter	DC-DC Forward Converter
Use Scenario: Primary-side switch in universal-input (85–265 VAC), 30–60 W offline adapter with quasi-resonant control. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz, handling peak drain voltages up to 1.2× V_IN(max). Use Value: 0.095 Ω R_DS(on) and 25 nC Q_g reduce both conduction and switching losses, improving efficiency by ≥1.2% over comparable 200 V MOSFETs.	Use Scenario: Main power switch in 48 V input, 12 V/10 A isolated DC-DC module for telecom power distribution. IC Role / Device Role / Timing Role: Hard-switched primary FET in forward topology with active clamp or reset winding. Use Value: 175 °C TJ rating allows full 15 A current delivery at 70 °C ambient without airflow, eliminating need for oversized heatsinks.
LED Driver Power Stage	Industrial Motor Control
Use Scenario: Switching element in constant-current LED driver for street lighting (230 VAC input, 350 mA output). IC Role / Device Role / Timing Role: High-side or low-side PWM switch controlling buck or buck-boost LED current regulation. Use Value: 150 V V_DS and 15 A I_D support multi-string LED arrays with high string voltage and surge immunity per IEC 61000-4-5.	Use Scenario: Half-bridge leg in 24 V DC brushless motor controller for HVAC actuators or industrial valves. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, driven by gate driver with bootstrap supply. Use Value: 0.095 Ω R_DS(on) limits I²R loss to <1.5 W at 12 A RMS, enabling compact PCB design with minimal thermal vias.

AC/DC Flyback Converter

DC-DC Forward Converter

Use Scenario: Primary-side switch in universal-input (85–265 VAC), 30–60 W offline adapter with quasi-resonant control.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz, handling peak drain voltages up to 1.2× V_IN(max).

Use Value: 0.095 Ω R_DS(on) and 25 nC Q_g reduce both conduction and switching losses, improving efficiency by ≥1.2% over comparable 200 V MOSFETs.

Use Scenario: Main power switch in 48 V input, 12 V/10 A isolated DC-DC module for telecom power distribution.

IC Role / Device Role / Timing Role: Hard-switched primary FET in forward topology with active clamp or reset winding.

Use Value: 175 °C TJ rating allows full 15 A current delivery at 70 °C ambient without airflow, eliminating need for oversized heatsinks.

LED Driver Power Stage

Industrial Motor Control

Use Scenario: Switching element in constant-current LED driver for street lighting (230 VAC input, 350 mA output).

IC Role / Device Role / Timing Role: High-side or low-side PWM switch controlling buck or buck-boost LED current regulation.

Use Value: 150 V V_DS and 15 A I_D support multi-string LED arrays with high string voltage and surge immunity per IEC 61000-4-5.

Use Scenario: Half-bridge leg in 24 V DC brushless motor controller for HVAC actuators or industrial valves.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, driven by gate driver with bootstrap supply.

Use Value: 0.095 Ω R_DS(on) limits I²R loss to <1.5 W at 12 A RMS, enabling compact PCB design with minimal thermal vias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	150 V, 16 A, R_DS(on) = 0.12 Ω @ 10 V; TO-220 package; no 100 % R_g test; lower thermal performance (R_thJC = 3.0 °C/W).	Requires mechanical heatsink mounting; less suitable for space-constrained surface-mount designs.	Select when through-hole assembly is preferred and higher R_DS(on) is acceptable for cost-sensitive applications.
IRF6644TRPBF	150 V, 19 A, R_DS(on) = 0.065 Ω @ 10 V; DirectFET® package; higher Q_g (34 nC); 175 °C rated.	Superior conduction loss but higher gate drive demand; requires careful PCB layout for high-frequency stability.	Select when lowest possible R_DS(on) is critical and board area permits larger DirectFET footprint and gate loop optimization.

Compared with STP16NF15 and IRF6644TRPBF, the SUD15N15-95-BE3 delivers balanced performance: lower R_DS(on) than STP16NF15 with superior thermal management in TO-252, and lower Q_g than IRF6644TRPBF for easier gate driving-making it optimal for mid-power SMPS where layout simplicity and thermal reliability are prioritized.

Availability

SUD15N15-95-BE3 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant lead-free packaging.

Supply support for SUD15N15-95-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SUD15N15-95-BE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-efficiency, high-temperature switching in offline power conversion and industrial motor control applications.

FAQ

What is the maximum continuous drain current rating for the SUD15N15-95-BE3?

The SUD15N15-95-BE3 is rated for 15 A continuous drain current at case temperature T_C = 25 °C and junction temperature T_J = 175 °C. At T_C = 125 °C, the rating drops to 8.7 A due to thermal derating. This specification is validated per Vishay's Absolute Maximum Ratings table and reflects actual conduction capability under sustained thermal equilibrium conditions.

Does the SUD15N15-95-BE3 support logic-level gate drive?

The SUD15N15-95-BE3 has a gate threshold voltage V_GS(th) minimum of 2 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement and specified R_DS(on) require V_GS ≥ 10 V. For optimal performance, use a dedicated gate driver capable of delivering ≥10 V with sufficient peak current to charge its 20–25 nC total gate charge rapidly.

What is the thermal resistance from junction to case (R_thJC) for the SUD15N15-95-BE3?

The SUD15N15-95-BE3 has a typical junction-to-case thermal resistance of 2.0 °C/W and a maximum of 2.4 °C/W. This low value is enabled by the TO-252AA package's exposed drain tab, which provides a direct thermal path to the PCB copper pour or external heatsink-critical for maintaining T_J ≤ 175 °C in high-power-density designs.

Is the SUD15N15-95-BE3 avalanche-rated?

Yes, the SUD15N15-95-BE3 is rated for repetitive avalanche energy of 11.3 mJ (with L = 0.1 mH, duty cycle ≤ 1 %). This capability enhances system robustness in topologies without clamping circuits, such as basic flyback converters subjected to line transients or transformer leakage spikes, reducing reliance on external snubbers.

What does the "-BE3" suffix indicate in SUD15N15-95-BE3?

The "-BE3" suffix denotes Vishay's lead (Pb)-free, halogen-free, and RoHS-compliant packaging variant using matte tin plating on the leads and compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). It is functionally and electrically identical to the base SUD15N15-95 part, with no performance or reliability trade-offs versus legacy leaded versions.

SUD15N15-95-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD15N15-95-BE3 FAQ

1.How can I place an order for SUD15N15-95-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD15N15-95-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD15N15-95-BE3 reliable?

The price and inventory of SUD15N15-95-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD15N15-95-BE3 is usually 5 days.

3.What payment methods are accepted for SUD15N15-95-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD15N15-95-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD15N15-95-BE3?

SUD15N15-95-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD15N15-95-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD15N15-95-BE3?

For technical support, including SUD15N15-95-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD15N15-95-BE3 requirements.

6.How does Aetrix verify that SUD15N15-95-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD15N15-95-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD15N15-95-BE3 meets industry standards.

7.What is the process for return or replacement of SUD15N15-95-BE3?

All SUD15N15-95-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD15N15-95-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD15N15-95-BE3 part is unused and in its original packaging.

Return procedure for SUD15N15-95-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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