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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD19N20-90-BE3

Name: SUD19N20-90-BE3
Brand: Vishay Siliconix
SKU: SUD19N20-90-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD19N20-90-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD19N20-90-BE3.pdf

Description:: MOSFET N-CH 200V 19A DPAK

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Product details

Overview

SUD19N20-90-BE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 200 V drain-source voltage, 19 A continuous drain current at 25 °C case temperature, and 0.090 Ω R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is optimized for PWM switching in primary-side switch applications.

For engineers reviewing the SUD19N20-90-BE3 datasheet, SUD19N20-90-BE3 pinout, SUD19N20-90-BE3 application, or SUD19N20-90-BE3 equivalent, key selection criteria include its TO-252AA package thermal resistance (R_thJC = 0.85 °C/W), 34 nC total gate charge, avalanche energy rating (E_AS = 18 mJ), and 100% R_g tested gate resistance.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (34–51 nC) and low Crss (80 pF). Its SOA is defined up to 100 µs pulse width and DC operation limited by R_DS(on) at V_GS ≥ 10 V.

The device features a source-drain diode with 19 A pulsed current capability, 0.9–1.5 V forward voltage at 19 A, and 180–250 ns reverse recovery time - enabling synchronous rectification or freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in offline SMPS up to 200 V DC bus
R_DS(on)	0.090 Ω @ V_GS = 10 V - enables <1.7 W conduction loss at 19 A, critical for thermal management
I_D (continuous)	19 A @ T_C = 25 °C - defines maximum steady-state current under ideal heatsinking
E_AS	18 mJ - specifies single-pulse avalanche robustness for inductive turn-off stress
Q_g	34 nC (typ.) - determines gate drive power and switching speed in PWM circuits
R_thJC	0.85 °C/W (typ.) - enables high-power dissipation with minimal junction-to-case temperature rise
T_J max	175 °C - allows operation in high-ambient industrial environments without derating

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 2.0–4.0 V threshold and ≤2.9 Ω gate resistance
S	Source	Reference node for gate drive and current return path; tied to power ground in low-side configuration
D	Drain	Main high-voltage power terminal; internally connected to exposed metal tab for thermal transfer

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, improving power density
PWM-optimized switching	Low Crss (80 pF) and balanced Ciss/Coss ratio reduce Miller-induced shoot-through risk
100% R_g tested	Ensures consistent gate drive timing and eliminates outliers in high-volume production
175 °C junction rating	Supports operation in sealed enclosures or high-ambient environments without forced cooling
RoHS-compliant (Pb-free)	Meets EU Directive 2002/95/EC; compatible with lead-free reflow profiles

Applications

AC-DC Adapter Primary Switch	Industrial DC-DC Converter
Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side power switch handling 200 V DC link and delivering regulated output via transformer coupling. Use Value: Low R_DS(on) minimizes conduction loss; 18 mJ E_AS withstands leakage inductance spikes during MOSFET turn-off.	Use Scenario: 200 W isolated half-bridge DC-DC module for factory automation control systems. IC Role / Device Role / Timing Role: High-side switch in primary bridge leg, driven by isolated gate driver with 10 V supply. Use Value: 175 °C rating ensures reliability under 70 °C ambient; TO-252 tab enables direct thermal interface to heatsink.
LED Driver Power Stage	Motor Control H-Bridge Leg
Use Scenario: Constant-current 100 W LED driver using active PFC + LLC topology. IC Role / Device Role / Timing Role: Fast-switching primary FET in LLC resonant tank, operating in ZVS region. Use Value: Low Q_g (34 nC) reduces gate drive losses; 100% R_g test ensures timing consistency across batches.	Use Scenario: 24 V BLDC motor controller with integrated H-bridge for HVAC actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20 kHz PWM frequency. Use Value: Source-drain diode V_SD = 0.9–1.5 V enables efficient freewheeling; 50 A I_SM handles motor surge currents.

AC-DC Adapter Primary Switch

Industrial DC-DC Converter

Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: Primary-side power switch handling 200 V DC link and delivering regulated output via transformer coupling.

Use Value: Low R_DS(on) minimizes conduction loss; 18 mJ E_AS withstands leakage inductance spikes during MOSFET turn-off.

Use Scenario: 200 W isolated half-bridge DC-DC module for factory automation control systems.

IC Role / Device Role / Timing Role: High-side switch in primary bridge leg, driven by isolated gate driver with 10 V supply.

Use Value: 175 °C rating ensures reliability under 70 °C ambient; TO-252 tab enables direct thermal interface to heatsink.

LED Driver Power Stage

Motor Control H-Bridge Leg

Use Scenario: Constant-current 100 W LED driver using active PFC + LLC topology.

IC Role / Device Role / Timing Role: Fast-switching primary FET in LLC resonant tank, operating in ZVS region.

Use Value: Low Q_g (34 nC) reduces gate drive losses; 100% R_g test ensures timing consistency across batches.

Use Scenario: 24 V BLDC motor controller with integrated H-bridge for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20 kHz PWM frequency.

Use Value: Source-drain diode V_SD = 0.9–1.5 V enables efficient freewheeling; 50 A I_SM handles motor surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP19NF20	R_DS(on) = 0.095 Ω @ 10 V; TO-220 package; higher R_thJA (62 °C/W)	Requires larger heatsink; not surface-mount; unsuitable for space-constrained designs	Choose when through-hole mounting and higher thermal mass are acceptable
IRF640NPBF	R_DS(on) = 0.18 Ω @ 10 V; 200 V rating; TO-220; no avalanche rating specified	Limited to lower-current (<10 A) or non-avalanche-critical applications	Choose only if cost sensitivity outweighs efficiency and ruggedness requirements

Compared with STP19NF20 and IRF640NPBF, the SUD19N20-90-BE3 delivers superior thermal performance via TO-252AA's low R_thJC, verified avalanche capability, and surface-mount compatibility - making it optimal for compact, high-reliability power stages.

Availability

SUD19N20-90-BE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED drivers requiring stable component supply and long-term manufacturability.

Supply support for SUD19N20-90-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics.

The SUD19N20-90-BE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered for high-efficiency, high-ruggedness switching in primary-side power conversion applications.

FAQ

What is the maximum continuous drain current rating for the SUD19N20-90-BE3 at 125 °C case temperature?

The SUD19N20-90-BE3 supports 11 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252AA package and must be applied in designs where case temperature exceeds 25 °C. The SUD19N20-90-BE3 maintains safe operation within its SOA curve under these conditions.

Does the SUD19N20-90-BE3 have an avalanche-rated specification, and what is its value?

Yes, the SUD19N20-90-BE3 is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 18 mJ at L = 0.1 mH. This rating is measured and guaranteed per Vishay's qualification standards, confirming its ability to absorb inductive switching energy without failure. The SUD19N20-90-BE3 datasheet explicitly lists this parameter in the Absolute Maximum Ratings section.

What is the gate threshold voltage range for the SUD19N20-90-BE3, and how does it affect drive circuit design?

The SUD19N20-90-BE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA. This means reliable enhancement-mode turn-on begins above ~2.5 V, but full R_DS(on) performance requires ≥10 V gate drive. Drive circuits must supply ≥12 V to ensure margin against noise and voltage drop. The SUD19N20-90-BE3 benefits from gate drivers capable of sourcing/sinking >1 A peak current due to its 34 nC Q_g.

Is the SUD19N20-90-BE3 RoHS-compliant, and what does the "-BE3" suffix indicate?

Yes, the SUD19N20-90-BE3 is RoHS-compliant and lead (Pb)-free. The "-BE3" suffix denotes Vishay's standard green packaging: halogen-free, Pb-free, and compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). This makes the SUD19N20-90-BE3 suitable for lead-free reflow soldering processes without special handling.

How does the SUD19N20-90-BE3's thermal resistance compare between junction-to-case and junction-to-ambient?

The SUD19N20-90-BE3 has a typical junction-to-case (R_thJC) thermal resistance of 0.85 °C/W, while its junction-to-ambient (R_thJA) is 40 °C/W (steady-state) on a 1" × 1" FR4 board. This large difference confirms that effective heat transfer relies on mounting the drain tab to a copper pour or external heatsink. Without thermal enhancement, ambient-limited power dissipation is only ~3 W - far below its 136 W P_D rating at T_C = 25 °C. The SUD19N20-90-BE3's performance is thus highly dependent on PCB layout.

SUD19N20-90-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD19N20-90-BE3 FAQ

1.How can I place an order for SUD19N20-90-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD19N20-90-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD19N20-90-BE3 reliable?

The price and inventory of SUD19N20-90-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD19N20-90-BE3 is usually 5 days.

3.What payment methods are accepted for SUD19N20-90-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD19N20-90-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD19N20-90-BE3?

SUD19N20-90-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD19N20-90-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD19N20-90-BE3?

For technical support, including SUD19N20-90-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD19N20-90-BE3 requirements.

6.How does Aetrix verify that SUD19N20-90-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD19N20-90-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD19N20-90-BE3 meets industry standards.

7.What is the process for return or replacement of SUD19N20-90-BE3?

All SUD19N20-90-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD19N20-90-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD19N20-90-BE3 part is unused and in its original packaging.

Return procedure for SUD19N20-90-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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