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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD19P06-60-BE3

Name: SUD19P06-60-BE3
Brand: Vishay Siliconix
SKU: SUD19P06-60-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD19P06-60-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD19P06-60-BE3.pdf

Description:: MOSFET P-CH 60V 18.3A DPAK

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Product details

Overview

SUD19P06-60-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -60 V drain-source voltage, 0.060 Ω R_DS(on) at V_GS = -10 V, and -19 A continuous drain current at T_C = 25 °C. It serves as a high-side switch in full-bridge DC/DC converters for LCD displays and industrial power supplies.

For engineers reviewing the SUD19P06-60-BE3 datasheet, SUD19P06-60-BE3 pinout, SUD19P06-60-BE3 application, or SUD19P06-60-BE3 equivalent, key selection criteria include its -60 V V_DS, low gate charge (26 nC), TO-252 package thermal performance (R_thJC = 2.7 °C/W), and 100 % UIS tested ruggedness for reliable switching in hard-switched topologies.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching with controlled Q_g (26 nC) and Q_gd (7 nC). Its gate threshold voltage range (-1 V to -3 V) ensures stable turn-on under varying bias conditions while maintaining noise immunity.

The device integrates a robust body diode with t_rr = 41–61 ns and V_SD = -1.0 to -1.5 V at -19 A, enabling synchronous rectification or freewheeling in half-bridge configurations without external diodes. Thermal design is supported by validated R_thJC = 2.7 °C/W and R_thJA = 45 °C/W (steady-state).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side operation in 48 V bus systems.
R_DS(on)	0.060 Ω at V_GS = -10 V - Enables <1.2 W conduction loss at -10 A, critical for thermally constrained PCB layouts.
I_D (continuous)	-19 A at T_C = 25 °C - Supports high-current DC/DC stages without forced cooling.
Q_g	26 nC (typ.) - Reduces gate drive power and enables efficient 100–500 kHz switching in SMPS.
E_AS	24.2 mJ - Confirmed single-pulse avalanche energy rating supports non-clamped inductive switching stress.
R_thJC	2.7 °C/W (typ.) - Allows direct heatsinking via drain-tab mounting for >30 W power dissipation.
t_r/t_f	9/30 ns - Fast edge rates minimize switching transition losses in high-frequency converters.

Pinout & Package

TO-252AA (DPAK) package with exposed drain tab for thermal and electrical connection. Dimensions per Vishay document 71197 (Rev. 03-Oct-2022); drain connected to tab, source and gate on gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally coupled to PCB copper pour; requires solder mask opening and thermal relief design.
Source	Reference node for gate control and current return	Connected to system ground or floating rail; defines V_GS reference for high-side switching.
Gate	Control input for channel modulation	High-impedance node requiring <2.5 Ω series resistance to damp ringing; sensitive to layout-induced coupling.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 22% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, improving power density.
100 % UIS tested	Each unit validated for unclamped inductive switching stress, eliminating field failure risk in motor or transformer drives.
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising thermal or mechanical reliability.
RoHS-compliant (2002/95/EC)	Lead-free termination (SnAgCu) compatible with standard reflow profiles; no lead contamination in assembly process.
Low Q_gd/Q_g ratio (7/26 nC)	Reduces Miller-induced shoot-through risk in bridge configurations, enabling robust gate drive with minimal dead-time.

Applications

High-Side Switch in Full-Bridge Converters	DC/DC Converter for LCD Displays
Use Scenario: Used as upper switch in isolated full-bridge DC/DC stage powering backlight inverters in industrial LCD panels. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and voltage inversion control. Use Value: Low R_DS(on) minimizes conduction loss at 12–24 V input; TO-252 thermal interface sustains 150 °C junction temperature during burst-mode operation.	Use Scenario: Controls power delivery to TFT-LCD timing controllers in medical imaging displays requiring low EMI. IC Role / Device Role / Timing Role: Primary high-side switch in 300 kHz buck-derived supply regulating V_DD for display driver ICs. Use Value: Fast t_r/t_f reduces switching noise; 24.2 mJ E_AS withstands inductive kickback from display panel capacitance discharge.
Industrial Motor Drive Half-Bridge	Telecom Power Shelf Protection
Use Scenario: Paired with N-channel MOSFET in half-bridge driving 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current flow and regenerative braking via body diode conduction. Use Value: Body diode t_rr = 41 ns ensures clean commutation; -60 V V_DS accommodates 40 V flyback transients without clamping.	Use Scenario: Implements OR-ing and hot-swap protection in redundant 48 V telecom power shelves. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input bus and load distribution. Use Value: -19 A I_D supports 15 A continuous load; halogen-free construction meets IPC-1752A material declaration requirements.

High-Side Switch in Full-Bridge Converters

DC/DC Converter for LCD Displays

Use Scenario: Used as upper switch in isolated full-bridge DC/DC stage powering backlight inverters in industrial LCD panels.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and voltage inversion control.

Use Value: Low R_DS(on) minimizes conduction loss at 12–24 V input; TO-252 thermal interface sustains 150 °C junction temperature during burst-mode operation.

Use Scenario: Controls power delivery to TFT-LCD timing controllers in medical imaging displays requiring low EMI.

IC Role / Device Role / Timing Role: Primary high-side switch in 300 kHz buck-derived supply regulating V_DD for display driver ICs.

Use Value: Fast t_r/t_f reduces switching noise; 24.2 mJ E_AS withstands inductive kickback from display panel capacitance discharge.

Industrial Motor Drive Half-Bridge

Telecom Power Shelf Protection

Use Scenario: Paired with N-channel MOSFET in half-bridge driving 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current flow and regenerative braking via body diode conduction.

Use Value: Body diode t_rr = 41 ns ensures clean commutation; -60 V V_DS accommodates 40 V flyback transients without clamping.

Use Scenario: Implements OR-ing and hot-swap protection in redundant 48 V telecom power shelves.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input bus and load distribution.

Use Value: -19 A I_D supports 15 A continuous load; halogen-free construction meets IPC-1752A material declaration requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 0.200 Ω @ -10 V; higher Q_g = 65 nC; TO-220 package	Larger footprint and higher conduction loss limit use to <5 A loads; unsuitable for high-frequency SMPS	Select only when TO-220 mounting is required and thermal budget allows 3× higher R_DS(on).
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; SOT-23 package; I_D = -4.2 A	Lower current rating and no drain-tab thermal path; limited to <2 W dissipation	Use only in space-constrained low-power logic-level switching where TO-252 mounting is impractical.

Compared with IRF9540NPbF and DMG2305UVT-7, the SUD19P06-60-BE3 uniquely balances -19 A current capability, 0.060 Ω R_DS(on), TO-252 thermal efficiency, and 26 nC gate charge-making it optimal for medium-power high-side switching where both current and frequency matter.

Availability

SUD19P06-60-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power shelves, LCD display DC/DC converters, and full-bridge power supplies requiring stable component supply across multi-year production cycles.

Supply support for SUD19P06-60-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SUD19P06-60-BE3 belongs to Vishay's TrenchFET® P-channel portfolio designed specifically for high-efficiency, high-reliability high-side switching in industrial and computing power systems.

FAQ

What is the maximum continuous drain current for SUD19P06-60-BE3 at 125 °C case temperature?

The SUD19P06-60-BE3 supports -8.19 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and silicon die; actual usable current depends on PCB copper area and ambient airflow. The SUD19P06-60-BE3 must be mounted with adequate thermal pad to sustain this rating.

Does SUD19P06-60-BE3 have a fully rated avalanche capability?

Yes, the SUD19P06-60-BE3 is 100 % UIS (unclamped inductive switching) tested with a guaranteed single-pulse avalanche energy E_AS of 24.2 mJ. This rating applies under defined test conditions (L = 0.1 mH, I_AS = -22 A) and confirms ruggedness against inductive turn-off transients. The SUD19P06-60-BE3 does not specify repetitive avalanche rating.

What is the gate threshold voltage range for SUD19P06-60-BE3?

The gate threshold voltage V_GS(th) for SUD19P06-60-BE3 is -1 V minimum to -3 V maximum at I_D = -250 µA, per the datasheet specifications. This range ensures reliable turn-on with standard -10 V gate drive while maintaining noise margin against false triggering. The SUD19P06-60-BE3 exhibits typical V_GS(th) = -2 V at room temperature.

Can SUD19P06-60-BE3 be used with 4.5 V gate drive?

Yes, the SUD19P06-60-BE3 is characterized for logic-level operation: R_DS(on) = 0.077 Ω at V_GS = -4.5 V and I_D = -5 A. This enables direct interfacing with 5 V microcontrollers or level-shifted drivers without gate boosters. However, full -19 A rating requires V_GS ≤ -10 V; the SUD19P06-60-BE3 delivers -16.8 A at -4.5 V.

What is the thermal resistance from junction to case for SUD19P06-60-BE3?

The typical junction-to-case thermal resistance R_thJC for SUD19P06-60-BE3 is 2.7 °C/W, with a maximum of 3.25 °C/W. This value is measured with the drain tab fully soldered to a 1"² FR-4 copper area. The SUD19P06-60-BE3 relies on this low R_thJC for effective heat transfer-critical when dissipating >5 W in compact industrial power modules.

SUD19P06-60-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 38.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD19P06-60-BE3 FAQ

1.How can I place an order for SUD19P06-60-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD19P06-60-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD19P06-60-BE3 reliable?

The price and inventory of SUD19P06-60-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD19P06-60-BE3 is usually 5 days.

3.What payment methods are accepted for SUD19P06-60-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD19P06-60-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD19P06-60-BE3?

SUD19P06-60-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD19P06-60-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD19P06-60-BE3?

For technical support, including SUD19P06-60-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD19P06-60-BE3 requirements.

6.How does Aetrix verify that SUD19P06-60-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD19P06-60-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD19P06-60-BE3 meets industry standards.

7.What is the process for return or replacement of SUD19P06-60-BE3?

All SUD19P06-60-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD19P06-60-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD19P06-60-BE3 part is unused and in its original packaging.

Return procedure for SUD19P06-60-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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