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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD20N10-66L-BE3

Name: SUD20N10-66L-BE3
Brand: Vishay Siliconix
SKU: SUD20N10-66L-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD20N10-66L-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD20N10-66L-BE3.pdf

Description:: MOSFET N-CH 100V 16.9A DPAK

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Product details

Overview

SUD20N10-66L-BE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, with R_DS(on) of 0.066 Ω at V_GS = 10 V and 0.080 Ω at V_GS = 4.5 V, delivering 16.9 A continuous drain current at T_C = 25 °C. It is optimized for high-efficiency DC/DC converters, motor drives, and DC/AC inverters where low conduction loss and fast switching are critical.

For engineers reviewing the SUD20N10-66L-BE3 datasheet, SUD20N10-66L-BE3 pinout, SUD20N10-66L-BE3 application, or SUD20N10-66L-BE3 equivalent, key selection criteria include its TO-252 (DPAK) package thermal performance (R_thJC = 3 °C/W), 19.8 nC total gate charge, avalanche-rated construction (E_AS = 11.25 mJ), and 100% R_g and UIS testing for robustness in hard-switching topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) while maintaining strong gate oxide reliability and controlled body diode recovery (t_rr = 34–51 ns, Q_rr = 50–75 nC). Its gate threshold voltage (V_GS(th) = 1.2–3.0 V) enables compatibility with both 3.3 V and 5 V logic-level drive, and its dynamic parameters-including C_iss = 860 pF, C_oss = 85 pF, and Crss = 40 pF-support efficient operation in high-frequency synchronous rectification and half-bridge configurations.

The device features a drain-connected tab for direct heatsinking, with junction-to-case thermal resistance of 3 °C/W and maximum power dissipation of 41.7 W at T_C = 25 °C. Its safe operating area (SOA) is characterized up to 100 µs pulse width, and it is fully specified for single-pulse avalanche energy (11.25 mJ at L = 0.1 mH), enabling reliable operation under inductive load switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports bus voltages up to 80 V DC in industrial and automotive DC/DC applications with margin.
R_DS(on) @ V_GS = 10 V	0.066 Ω max - Enables <1.2 W conduction loss at 13.2 A, reducing thermal load in compact layouts.
R_DS(on) @ V_GS = 4.5 V	0.080 Ω max - Ensures usable on-resistance with standard 3.3 V or 5 V gate drivers without level-shifting.
Q_g	19.8 nC typical - Balances switching speed and drive strength; supports >500 kHz operation with moderate gate resistor.
E_AS	11.25 mJ - Withstands single inductive switching events up to 15 A × 100 V without failure, per JEDEC JESD24-1.
R_thJC	3 °C/W - Allows direct PCB copper pour heatsinking; achieves ~75 °C junction rise over case at 20 W dissipation.
t_rr / Q_rr	34–51 ns / 50–75 nC - Fast, soft-recovery body diode minimizes shoot-through risk and reduces snubber losses in bridge circuits.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab. Dimensions conform to Vishay Document 71197 (Version 1 or 2), with 6.35 mm × 6.73 mm body and 1.50–1.78 mm height. Tab is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≤ ±20 V rating; low input capacitance (C_iss = 860 pF) eases driver selection.
S (Source)	Reference node for gate drive and current return	Common reference for gate control and load current return; must be low-inductance layout to minimize ringing.
D (Drain)	Main power output terminal	Connected internally to exposed metal tab; carries full load current and provides primary thermal conduction path to PCB copper.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for TO-252, enabling higher power density than planar alternatives.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching validation-ensuring ruggedness in real-world transients.
Drain-connected tab	Enables direct thermal coupling to PCB copper pour or external heatsink, achieving R_thJA = 60 °C/W on 1"² FR-4 board.
Low Q_gd/Q_g ratio	Q_gd = 4.1 nC of total Q_g = 19.8 nC (21%) - Reduces Miller plateau time and improves controllability during switching transitions.
Specified body diode recovery	t_rr = 34–51 ns and Q_rr = 50–75 nC - Enables use in synchronous rectifier and freewheeling roles without external Schottky.

Applications

DC/DC Converters	Motor Drives
Use Scenario: High-current buck converter in telecom power supply (48 V input, 12 V/20 A output). IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectification topology. Use Value: Low R_DS(on) (0.066 Ω) limits conduction loss to <1.8 W at full load, improving efficiency by ≥1.2% vs. comparable 0.09 Ω MOSFETs.	Use Scenario: H-bridge leg in 24 V brushed DC motor controller for industrial automation. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 16.9 A continuous. Use Value: Avalanche rating (11.25 mJ) absorbs inductive kickback during PWM turn-off, eliminating need for external clamping diodes.
DC/AC Inverters	Industrial Power Supplies
Use Scenario: Half-bridge switch in 100 V DC link solar microinverter stage. IC Role / Device Role / Timing Role: Fast-switching power switch with controlled dV/dt to reduce EMI in transformerless designs. Use Value: Low Crss (40 pF) and Q_gd (4.1 nC) suppress Miller-induced false turn-on, enabling stable 100 kHz operation without gate resistors >10 Ω.	Use Scenario: Primary-side switch in isolated flyback converter for factory automation I/O module. IC Role / Device Role / Timing Role: Main switching transistor driving transformer primary with 100 V clamp. Use Value: V_DS = 100 V rating provides 20% margin over 80 V max line, meeting IEC 62368-1 transient surge requirements without derating.

DC/DC Converters

Motor Drives

Use Scenario: High-current buck converter in telecom power supply (48 V input, 12 V/20 A output).

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectification topology.

Use Value: Low R_DS(on) (0.066 Ω) limits conduction loss to <1.8 W at full load, improving efficiency by ≥1.2% vs. comparable 0.09 Ω MOSFETs.

Use Scenario: H-bridge leg in 24 V brushed DC motor controller for industrial automation.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 16.9 A continuous.

Use Value: Avalanche rating (11.25 mJ) absorbs inductive kickback during PWM turn-off, eliminating need for external clamping diodes.

DC/AC Inverters

Industrial Power Supplies

Use Scenario: Half-bridge switch in 100 V DC link solar microinverter stage.

IC Role / Device Role / Timing Role: Fast-switching power switch with controlled dV/dt to reduce EMI in transformerless designs.

Use Value: Low Crss (40 pF) and Q_gd (4.1 nC) suppress Miller-induced false turn-on, enabling stable 100 kHz operation without gate resistors >10 Ω.

Use Scenario: Primary-side switch in isolated flyback converter for factory automation I/O module.

IC Role / Device Role / Timing Role: Main switching transistor driving transformer primary with 100 V clamp.

Use Value: V_DS = 100 V rating provides 20% margin over 80 V max line, meeting IEC 62368-1 transient surge requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	R_DS(on) = 0.08 Ω @ 10 V; TO-220 package; no 100% UIS test; R_thJC = 2.5 °C/W but larger footprint.	Larger thermal mass suits lower-frequency (<100 kHz), higher-power (≥50 W) linear-regulated supplies.	Select when mechanical mounting to heatsink is preferred over PCB thermal management and gate drive is strictly 10 V.
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V but only rated to 100 V with 20% derating; TO-220; no avalanche energy spec; Q_g = 71 nC.	Higher conduction efficiency but slower switching and undefined avalanche capability limit use in inductive switching.	Prefer only in resistive-load or low-dV/dt applications where peak V_DS remains <80 V and switching frequency <50 kHz.

Compared with STP16NF10 and IRF540NPBF, the SUD20N10-66L-BE3 offers superior thermal integration via TO-252, verified avalanche ruggedness for inductive loads, and balanced gate charge for high-frequency operation-making it optimal for space-constrained, high-reliability DC/DC and motor control designs.

Availability

SUD20N10-66L-BE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drives, and DC/AC inverters requiring stable component supply, long-term manufacturability, and consistent parametric performance across production batches.

Supply support for SUD20N10-66L-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, automotive, and computing markets.

The SUD20N10-66L-BE3 belongs to Vishay's TrenchFET® Gen IV low-R_DS(on) power MOSFET family, engineered specifically for high-efficiency, high-density power conversion where thermal management and switching integrity are critical.

FAQ

What is the maximum continuous drain current for SUD20N10-66L-BE3 at 70 °C case temperature?

The SUD20N10-66L-BE3 supports 13.6 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its SOA curve. The full 16.9 A rating applies only at T_C = 25 °C, and actual design current must consider PCB copper area, ambient airflow, and duty cycle.

Does SUD20N10-66L-BE3 support 3.3 V logic-level gate drive?

Yes, the SUD20N10-66L-BE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) guaranteed at 0.080 Ω max-enabling robust operation with 3.3 V microcontroller outputs or dedicated 3.3 V gate drivers. Its V_GS(th) range (1.2–3.0 V) ensures turn-on margin, though full performance (e.g., lowest R_DS(on)) requires ≥4.5 V drive.

What is the thermal resistance from junction to ambient for SUD20N10-66L-BE3 on a standard PCB?

The SUD20N10-66L-BE3 has a junction-to-ambient thermal resistance (R_thJA) of 60 °C/W when mounted on a 1" square FR-4 PCB, per Vishay's test condition. This value assumes no additional heatsink; adding 1 oz. copper pour under the drain tab can improve R_thJA by 20–30%, depending on layout and airflow.

Is SUD20N10-66L-BE3 suitable for avalanche-prone circuits like relay drivers or solenoid switches?

Yes, the SUD20N10-66L-BE3 is 100% UIS tested and rated for single-pulse avalanche energy of 11.25 mJ (L = 0.1 mH), making it suitable for inductive load switching without external protection. Its avalanche capability is validated per JEDEC JESD24-1, and the device maintains functionality after such events-critical for relay/solenoid drivers in industrial controls.

How does the body diode performance of SUD20N10-66L-BE3 compare to external Schottky diodes in synchronous rectification?

The SUD20N10-66L-BE3 body diode exhibits t_rr = 34–51 ns and Q_rr = 50–75 nC, offering faster recovery and lower stored charge than many 100 V Schottky diodes. While forward voltage (V_SD = 0.8–1.5 V) is higher than Schottky, its integrated nature eliminates layout parasitics and simplifies PCB routing-especially beneficial in compact, high-density DC/DC modules.

SUD20N10-66L-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 66mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 41.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD20N10-66L-BE3 FAQ

1.How can I place an order for SUD20N10-66L-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD20N10-66L-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD20N10-66L-BE3 reliable?

The price and inventory of SUD20N10-66L-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD20N10-66L-BE3 is usually 5 days.

3.What payment methods are accepted for SUD20N10-66L-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD20N10-66L-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD20N10-66L-BE3?

SUD20N10-66L-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD20N10-66L-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD20N10-66L-BE3?

For technical support, including SUD20N10-66L-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD20N10-66L-BE3 requirements.

6.How does Aetrix verify that SUD20N10-66L-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD20N10-66L-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD20N10-66L-BE3 meets industry standards.

7.What is the process for return or replacement of SUD20N10-66L-BE3?

All SUD20N10-66L-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD20N10-66L-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD20N10-66L-BE3 part is unused and in its original packaging.

Return procedure for SUD20N10-66L-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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