Vishay Siliconix SUD23N06-31-BE3

Overview

SUD23N06-31-BE3 from Vishay Siliconix is a N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 0.031 Ω at V_GS = 10 V and 15 A test current, 9.1 A continuous drain current at T_A = 25 °C, 6.5 nC total gate charge, and TO-252 (DPAK) surface-mount package - used as a primary switching element in high-efficiency DC/DC converters.

For engineers reviewing the SUD23N06-31-BE3 datasheet, SUD23N06-31-BE3 pinout, SUD23N06-31-BE3 application, or SUD23N06-31-BE3 equivalent, key selection criteria include its 60 V V_DS rating, low 0.031 Ω on-resistance at 10 V drive, thermal resistance of 3.2 °C/W (junction-to-case), body diode recovery time of 30–60 ns, and RoHS/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in medium-voltage DC/DC topologies. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 100 % R_g and UIS tested qualification ensures robustness in hard-switching and avalanche-prone conditions.

The device features a drain-connected tab for direct heatsinking, integrated body diode with 1.0–1.5 V forward voltage at 15 A, and dynamic parameters including C_iss = 670 pF, C_oss = 140 pF, and Q_gd = 3.0 nC - supporting high-frequency operation up to several hundred kHz in synchronous buck and half-bridge configurations.

Key Specifications

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IRF7470PBF and DMN6070LSD-13, the SUD23N06-31-BE3 delivers optimal balance of low R_DS(on), moderate Q_g, and proven TO-252 thermal performance - making it preferred for 6–10 A DC/DC stages where efficiency, layout simplicity, and reliability are prioritized over ultra-high frequency or dual-device integration.

Availability

SUD23N06-31-BE3 is available at Aetrix Electronics and suitable for industrial DC/DC converters, automotive body electronics, and telecom point-of-load regulators requiring stable component supply and long-term manufacturability.

Supply support for SUD23N06-31-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, automotive, and computing markets.

The SUD23N06-31-BE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, medium-voltage switching in space-constrained surface-mount power supplies where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for SUD23N06-31-BE3 at 70 °C ambient temperature?

The SUD23N06-31-BE3 supports 7.6 A continuous drain current at T_A = 70 °C on a 1" × 1" FR4 board (t ≤ 10 s). This value reflects derating due to reduced thermal dissipation at elevated ambient temperatures and must be validated against actual PCB layout and airflow conditions. The SUD23N06-31-BE3 datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SUD23N06-31-BE3 have a built-in body diode, and what are its key characteristics?

Yes, the SUD23N06-31-BE3 integrates a parasitic body diode with V_SD = 1.0–1.5 V at I_S = 15 A and reverse recovery time t_rr = 30–60 ns at T_J = 25 °C. Its Q_rr is 35–70 nC, supporting synchronous rectification in buck converters. These values are measured per the SUD23N06-31-BE3 datasheet's "Drain-Source Body Diode Characteristics" section and confirm suitability for moderate-frequency freewheeling applications.

Is SUD23N06-31-BE3 compatible with 3.3 V logic-level gate drive?

Yes, the SUD23N06-31-BE3 has a gate threshold voltage V_GS(th) of 1.0–3.0 V, enabling turn-on with 3.3 V logic signals. However, full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(on) = 0.045 Ω; at 3.3 V, conduction loss increases significantly. The SUD23N06-31-BE3 datasheet confirms this behavior in the "Static" specifications table and transfer characteristic curves.

What is the thermal resistance from junction to case (R_thJC) for SUD23N06-31-BE3, and how does it impact heatsinking?

The SUD23N06-31-BE3 has a typical R_thJC of 3.2 °C/W, with a maximum of 4.0 °C/W. This low value results from its drain-connected tab design, allowing direct thermal coupling to a heatsink or large copper pour. With a 64 °C allowable junction-to-case temperature rise, the SUD23N06-31-BE3 can dissipate up to ~20 W when properly heatsunk - a key advantage over higher-R_thJC alternatives in compact power designs.

How does the halogen-free status of SUD23N06-31-BE3 align with environmental compliance standards?

The SUD23N06-31-BE3 is halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC, verified by Vishay's material declarations and manufacturing controls. This ensures compatibility with lead-free reflow profiles and meets regulatory requirements for consumer, industrial, and automotive end equipment. The SUD23N06-31-BE3 product marking and packaging documentation explicitly state this compliance per Vishay Document Number 68857.