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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD23N06-31L-T4BE3

Name: SUD23N06-31L-T4BE3
Brand: Vishay Siliconix
SKU: SUD23N06-31L-T4BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD23N06-31L-T4BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD23N06-31L-T4BE3.pdf

Description:: MOSFET N-CH 60V 9.1A/21.4A DPAK

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Product details

Overview

SUD23N06-31L-T4BE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 0.031 Ω at V_GS = 10 V and 9.1 A continuous drain current at T_A = 25 °C. It features 6.5 nC total gate charge and TO-252 (DPAK) surface-mount package, optimized for high-efficiency DC/DC converters.

For engineers reviewing the SUD23N06-31L-T4BE3 datasheet, SUD23N06-31L-T4BE3 pinout, SUD23N06-31L-T4BE3 application, or SUD23N06-31L-T4BE3 equivalent, key selection criteria include its 60 V V_DS, low 0.031 Ω on-resistance at 10 V drive, 6.5 nC Q_g, body diode recovery time of 30–60 ns, and thermal resistance R_thJC = 3.2 °C/W - all critical for synchronous buck converter high-side switching.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with controlled Q_g/Q_gd ratio. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the integrated source-drain diode supports freewheeling in non-synchronous topologies.

The device is fully characterized for UIS (unclamped inductive switching) and 100 % R_g tested, with avalanche energy rating E_AS = 20 mJ. Thermal design is supported by a low junction-to-case resistance (3.2 °C/W typical) and drain-connected tab for direct heatsinking in TO-252 layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in high-side switch position of buck or half-bridge circuits
R_DS(on)	0.031 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 15 A, critical for thermally constrained PCBs
I_D (continuous)	9.1 A @ T_A = 25 °C - Validated on standard 1" × 1" FR4 board, defines baseline thermal performance
Q_g	6.5 nC @ V_GS = 4.5 V - Determines gate drive power and switching speed in 3.3 V control systems
t_rr	30–60 ns - Limits reverse recovery losses during hard commutation in synchronous rectification
R_thJC	3.2 °C/W - Allows direct thermal path to heatsink via drain tab, enabling >20 W dissipation with modest heatsinking
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with standard microcontroller GPIO or dedicated gate drivers

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires low-impedance driver due to 1.6–3.2 Ω internal gate resistance
S (Source)	Power return reference	Common node for source current return and gate drive ground; must be low-inductance path in high-dI/dt applications
D (Drain)	Main power output	Connected internally to exposed metal tab; electrically and thermally tied to PCB heatsink area

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.031 Ω R_DS(on) in TO-252 without requiring die-size increase or higher cost packaging
100 % R_g and UIS tested	Ensures gate robustness against ESD and reliability under inductive load switching stress
Drain-connected tab	Provides dual-path thermal conduction (junction-to-case and junction-to-PCB) for improved power handling
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and automotive supply chains
Low Q_gd/Q_g ratio	Supports stable Miller plateau behavior and reduced risk of shoot-through in half-bridge configurations

Applications

DC/DC Buck Converter	Motor Drive Half-Bridge
Use Scenario: High-efficiency 12 V to 3.3 V point-of-load conversion in telecom base station power modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 3.3 V gate drive. Use Value: 0.031 Ω R_DS(on) and 6.5 nC Q_g minimize combined conduction and switching losses, enabling >92 % efficiency at 8 A output.	Use Scenario: 24 V brushed DC motor control in industrial automation actuators with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge, commutating inductive load current with body diode freewheeling. Use Value: 30–60 ns body diode t_rr and 1.0–1.5 V V_SD reduce crossover loss and heat generation during direction reversal.
LED Driver Power Stage	Hot-Swap Controller FET
Use Scenario: Constant-current LED string driver in architectural lighting, requiring 60 V bus tolerance and thermal stability. IC Role / Device Role / Timing Role: Primary pass transistor regulating current through high-brightness LED arrays. Use Value: R_thJC = 3.2 °C/W and 150 °C max T_J allow sustained 7 A operation with minimal heatsink, reducing system size and cost.	Use Scenario: Inrush current limiting in 48 V server backplane power distribution with soft-start and fault protection. IC Role / Device Role / Timing Role: Series pass FET controlled by hot-swap controller IC to limit dV/dt and peak current during insertion. Use Value: 60 V V_DS and 20.8 A continuous I_S support safe operation during transient overloads and reverse polarity events.

DC/DC Buck Converter

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load conversion in telecom base station power modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 3.3 V gate drive.

Use Value: 0.031 Ω R_DS(on) and 6.5 nC Q_g minimize combined conduction and switching losses, enabling >92 % efficiency at 8 A output.

Use Scenario: 24 V brushed DC motor control in industrial automation actuators with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge, commutating inductive load current with body diode freewheeling.

Use Value: 30–60 ns body diode t_rr and 1.0–1.5 V V_SD reduce crossover loss and heat generation during direction reversal.

LED Driver Power Stage

Hot-Swap Controller FET

Use Scenario: Constant-current LED string driver in architectural lighting, requiring 60 V bus tolerance and thermal stability.

IC Role / Device Role / Timing Role: Primary pass transistor regulating current through high-brightness LED arrays.

Use Value: R_thJC = 3.2 °C/W and 150 °C max T_J allow sustained 7 A operation with minimal heatsink, reducing system size and cost.

Use Scenario: Inrush current limiting in 48 V server backplane power distribution with soft-start and fault protection.

IC Role / Device Role / Timing Role: Series pass FET controlled by hot-swap controller IC to limit dV/dt and peak current during insertion.

Use Value: 60 V V_DS and 20.8 A continuous I_S support safe operation during transient overloads and reverse polarity events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	30 V V_DS, 0.035 Ω R_DS(on) @ 4.5 V, SOT-23 package, lower current rating (4.4 A)	Not suitable for 48 V or 60 V bus applications; limited to ≤12 V systems with space-constrained layouts	Select only when board space is critical and voltage requirements are ≤30 V.
DMN3028LSD-13	30 V V_DS, 0.028 Ω R_DS(on) @ 4.5 V, SO-8 package with dual N-channel configuration	Lacks 60 V rating; dual-FET layout supports half-bridge integration but not single high-voltage switch replacement	Consider for low-voltage dual-switch designs where footprint and channel pairing outweigh voltage needs.

Compared with IRLML6344TRPBF and DMN3028LSD-13, the SUD23N06-31L-T4BE3 uniquely supports 60 V operation in a single TO-252 device with validated UIS ruggedness and thermal performance - making it the only viable option among the three for industrial 48 V DC/DC and motor drive applications requiring ≥60 V blocking capability.

Availability

SUD23N06-31L-T4BE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive half-bridges, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.

Supply support for SUD23N06-31L-T4BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, computing, and automotive markets.

The SUD23N06-31L-T4BE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-frequency, high-efficiency switching in compact surface-mount power supplies and motor control systems.

FAQ

What is the maximum continuous drain current for SUD23N06-31L-T4BE3 at 70 °C ambient temperature?

The SUD23N06-31L-T4BE3 supports 7.6 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board. This derating reflects thermal limits under natural convection; actual current capacity increases with PCB copper area and airflow. The SUD23N06-31L-T4BE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_A = 70 °C)".

Does SUD23N06-31L-T4BE3 support logic-level gate drive?

Yes, the SUD23N06-31L-T4BE3 has a gate threshold voltage range of 1.0–3.0 V and delivers R_DS(on) = 0.045 Ω at V_GS = 4.5 V, enabling full enhancement with standard 3.3 V or 5 V logic outputs. Its 6.5 nC Q_g at 4.5 V ensures manageable gate drive requirements. This behavior is confirmed in the "Specifications" table of the SUD23N06-31L-T4BE3 datasheet.

What is the thermal resistance from junction to case for SUD23N06-31L-T4BE3?

The SUD23N06-31L-T4BE3 has a typical junction-to-case thermal resistance (R_thJC) of 3.2 °C/W, with a maximum of 4.0 °C/W. This low value is enabled by the drain-connected metal tab in its TO-252 package, allowing efficient heat transfer to external heatsinks or PCB copper pours. The value is specified in the "Thermal Resistance Ratings" section of the SUD23N06-31L-T4BE3 datasheet.

Is SUD23N06-31L-T4BE3 suitable for avalanche energy handling in inductive switching?

Yes, the SUD23N06-31L-T4BE3 is 100 % UIS (unclamped inductive switching) tested and rated for 20 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This makes it suitable for flyback, boost, and relay-driving applications where inductive energy must be safely absorbed. The SUD23N06-31L-T4BE3 datasheet lists E_AS in the Absolute Maximum Ratings table and confirms UIS testing in the Features section.

What is the body diode forward voltage of SUD23N06-31L-T4BE3 at 15 A?

The body diode forward voltage (V_SD) of the SUD23N06-31L-T4BE3 is 1.0–1.5 V at I_S = 15 A and T_J = 25 °C, as specified in the "Drain-Source Body Diode Characteristics" section of its datasheet. This parameter directly impacts conduction loss during freewheeling in non-synchronous topologies and influences thermal design in motor drive applications using the intrinsic diode.

SUD23N06-31L-T4BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9.1A (Ta), 21.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 5.7W (Ta), 31.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD23N06-31L-T4BE3 FAQ

1.How can I place an order for SUD23N06-31L-T4BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD23N06-31L-T4BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD23N06-31L-T4BE3 reliable?

The price and inventory of SUD23N06-31L-T4BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD23N06-31L-T4BE3 is usually 5 days.

3.What payment methods are accepted for SUD23N06-31L-T4BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD23N06-31L-T4BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD23N06-31L-T4BE3?

SUD23N06-31L-T4BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD23N06-31L-T4BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD23N06-31L-T4BE3?

For technical support, including SUD23N06-31L-T4BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD23N06-31L-T4BE3 requirements.

6.How does Aetrix verify that SUD23N06-31L-T4BE3 is sourced from the original manufacturer or authorized distributors?

All SUD23N06-31L-T4BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD23N06-31L-T4BE3 meets industry standards.

7.What is the process for return or replacement of SUD23N06-31L-T4BE3?

All SUD23N06-31L-T4BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD23N06-31L-T4BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD23N06-31L-T4BE3 part is unused and in its original packaging.

Return procedure for SUD23N06-31L-T4BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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