Vishay Siliconix SUD23N06-31-T4-GE3

Overview

SUD23N06-31-T4-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 0.031 Ω at V_GS = 10 V and 15 A test current, 6.5 nC total gate charge, and TO-252 (DPAK) package. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC/DC converters.

For engineers reviewing the SUD23N06-31-T4-GE3 datasheet, SUD23N06-31-T4-GE3 pinout, SUD23N06-31-T4-GE3 application, or SUD23N06-31-T4-GE3 equivalent, key selection criteria include its 0.045 Ω R_DS(on) at 4.5 V gate drive, 21.4 A continuous drain current at T_C = 25 °C, 100 % UIS tested ruggedness, and halogen-free, RoHS-compliant construction.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency switching applications. Its gate threshold voltage range (1.0–3.0 V) supports both 3.3 V and 5 V logic-level drive, while its 670 pF input capacitance and 60 pF reverse transfer capacitance enable fast turn-on/turn-off with controlled EMI.

The device integrates a robust body diode with 1.0–1.5 V forward voltage at 15 A and 30–60 ns reverse recovery time, making it suitable for freewheeling paths in buck and synchronous buck topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection. Standard JEDEC outline per Vishay Doc. #71197 (Version 1 & 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLML6344TRPBF and DMN3020LFG-7, the SUD23N06-31-T4-GE3 provides superior thermal capability via its TO-252 drain tab and higher continuous current rating, making it the preferred choice for industrial and telecom power stages demanding >15 A and stable junction temperature control.

Availability

SUD23N06-31-T4-GE3 is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, USB-C power delivery sinks, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SUD23N06-31-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SUD23N06-31-T4-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for SUD23N06-31-T4-GE3 at case temperature of 70 °C?

The SUD23N06-31-T4-GE3 supports 17.1 A continuous drain current when the case temperature is maintained at 70 °C, as specified in its Absolute Maximum Ratings table. This value reflects derating from the 21.4 A rating at 25 °C and is critical for thermal design validation in enclosed or high-ambient environments. The SUD23N06-31-T4-GE3 achieves this using its low R_thJC of 3.2 °C/W and drain-connected tab for effective heat transfer.

Does SUD23N06-31-T4-GE3 support 3.3 V logic-level gate drive?

The SUD23N06-31-T4-GE3 has a gate threshold voltage range of 1.0–3.0 V and specifies R_DS(on) = 0.045 Ω at V_GS = 4.5 V, but not at 3.3 V. While it may partially enhance at 3.3 V, Vishay does not guarantee full conduction or specified R_DS(on) below 4.5 V. For reliable 3.3 V drive, a logic-level MOSFET with explicit 3.3 V R_DS(on) characterization is recommended. The SUD23N06-31-T4-GE3 is best used with ≥4.5 V gate drive.

What is the avalanche energy rating of SUD23N06-31-T4-GE3, and is it tested per unit?

The SUD23N06-31-T4-GE3 is rated for 20 mJ single-pulse avalanche energy (E_AS) and undergoes 100 % Unclamped Inductive Switching (UIS) testing during production. This ensures each device can safely absorb inductive energy transients-such as those from relay coils or motor windings-without failure. The SUD23N06-31-T4-GE3's guaranteed E_AS supports robust design in automotive and industrial switching applications.

How does the drain-connected tab on SUD23N06-31-T4-GE3 impact PCB layout and thermal design?

The drain-connected tab on the SUD23N06-31-T4-GE3 must be soldered to a large, thermally optimized copper pour on the PCB to realize its 3.2 °C/W typical R_thJC. This tab carries both high current and heat, so layout requires minimum 200 mm² of 2-oz copper connected via ≥4 thermal vias to inner-layer planes. Failure to properly connect the tab degrades thermal performance and risks exceeding T_J(max) = 150 °C. The SUD23N06-31-T4-GE3's thermal behavior is fully dependent on this mechanical implementation.

Is SUD23N06-31-T4-GE3 suitable for use as a synchronous rectifier in a 60 V input buck converter?

Yes, the SUD23N06-31-T4-GE3 is suitable as a synchronous rectifier in a 60 V input buck converter because its 60 V V_DS rating matches the maximum blocking requirement, and its low R_DS(on) reduces conduction loss significantly versus a Schottky diode. However, proper gate drive timing-ensuring the SUD23N06-31-T4-GE3 turns off before the high-side switch turns on-is essential to prevent shoot-through. The SUD23N06-31-T4-GE3's fast 25–40 ns fall time supports precise timing control in such configurations.