Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD25N15-52-BE3

Name: SUD25N15-52-BE3
Brand: Vishay Siliconix
SKU: SUD25N15-52-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SUD25N15-52-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD25N15-52-BE3.pdf

Description:: MOSFET N-CH 150V 25A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,290

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SUD25N15-52-BE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 25 A continuous drain current at T_C = 25 °C, and 0.052 Ω R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is optimized for PWM switching in primary-side switch applications.

For engineers reviewing the SUD25N15-52-BE3 datasheet, SUD25N15-52-BE3 pinout, SUD25N15-52-BE3 application, or SUD25N15-52-BE3 equivalent, key selection criteria include its TO-252 package thermal performance (R_thJC = 0.85 °C/W), avalanche energy rating (31 mJ), and gate charge profile (Q_g = 33–40 nC) for high-frequency hard-switching designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (12 nC / 9 nC). Its 100 % R_g tested gate resistance (1–3 Ω) ensures consistent turn-on/turn-off timing across production lots.

The device features a source-drain diode with 0.9–1.5 V forward voltage at 25 A and 95–140 ns reverse recovery time, enabling synchronous rectification support in flyback and resonant topologies without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports input voltages up to 120 VAC rectified (≈170 VDC peak) with margin for transient spikes.
R_DS(on)	0.052 Ω @ V_GS = 10 V - Delivers ≤3.25 W conduction loss at 25 A, enabling compact heatsinking in space-constrained SMPS.
I_D (continuous)	25 A @ T_C = 25 °C - Rated for high-current primary-side switching in offline adapters and industrial power supplies.
Q_g	33–40 nC - Enables efficient gate drive with standard 1-A peak drivers at 100–500 kHz switching frequencies.
T_J max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating below full current.
E_AR	31 mJ - Withstands single-pulse inductive energy during overcurrent events without failure in properly designed clamp circuits.
R_thJC	0.85 °C/W (typ.) - Enables direct mounting to copper-clad PCBs or heatsinks for thermal management without thermal interface material.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for enhanced thermal transfer to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 2–4 V threshold; driven by PWM controller with ≥10 V for full enhancement and minimal R_DS(on).
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations.
D	Drain	High-voltage power path; electrically and thermally connected to exposed metal tab for efficient heat dissipation.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables lower R_DS(on) per die area than planar MOSFETs, reducing package size and cost for equivalent current rating.
PWM-optimized switching	Low Q_gd/Q_gs ratio (1.33) minimizes Miller plateau duration, improving controllability in high-duty-cycle applications.
100 % R_g tested	Guarantees gate resistance between 1 Ω and 3 Ω, eliminating timing variation in parallel configurations or critical timing loops.
Drain-connected tab	Provides low-inductance, low-thermal-resistance path from junction to PCB or heatsink-critical for EMI reduction and thermal stability.

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: 65–100 W universal-input (90–264 VAC) flyback converter powering IoT gateways and PoE injectors. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer during PWM on-time. Use Value: 0.052 Ω R_DS(on) reduces conduction loss by >25 % vs. legacy 0.08 Ω devices, improving efficiency from 85 % to 87.5 % at full load.	Use Scenario: 200–500 W isolated half-bridge or LLC resonant converter in factory automation controllers. IC Role / Device Role / Timing Role: High-current primary switch handling repetitive 25 A pulses with 175 °C junction capability under sustained overload. Use Value: 31 mJ avalanche energy rating allows safe operation during short-circuit events without snubber redesign or derating.
LED Driver Power Stages	Telecom Power Supplies
Use Scenario: Constant-current buck-boost LED driver for streetlight modules operating in outdoor enclosures up to 85 °C ambient. IC Role / Device Role / Timing Role: Main switching element regulating output current via high-frequency PWM dimming control. Use Value: 175 °C T_J rating enables full 25 A current delivery at elevated case temperatures where thermal derating would otherwise cut output by 40 %.	Use Scenario: -48 V telecom rectifier front-end with active OR-ing and hot-swap protection. IC Role / Device Role / Timing Role: Low-loss primary switch in dual-active-bridge topology managing bidirectional power flow. Use Value: Source-drain diode V_SD = 0.9–1.5 V supports synchronous rectification mode, reducing forward drop by 0.3 V vs. discrete Schottky solutions.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: 65–100 W universal-input (90–264 VAC) flyback converter powering IoT gateways and PoE injectors.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer during PWM on-time.

Use Value: 0.052 Ω R_DS(on) reduces conduction loss by >25 % vs. legacy 0.08 Ω devices, improving efficiency from 85 % to 87.5 % at full load.

Use Scenario: 200–500 W isolated half-bridge or LLC resonant converter in factory automation controllers.

IC Role / Device Role / Timing Role: High-current primary switch handling repetitive 25 A pulses with 175 °C junction capability under sustained overload.

Use Value: 31 mJ avalanche energy rating allows safe operation during short-circuit events without snubber redesign or derating.

LED Driver Power Stages

Telecom Power Supplies

Use Scenario: Constant-current buck-boost LED driver for streetlight modules operating in outdoor enclosures up to 85 °C ambient.

IC Role / Device Role / Timing Role: Main switching element regulating output current via high-frequency PWM dimming control.

Use Value: 175 °C T_J rating enables full 25 A current delivery at elevated case temperatures where thermal derating would otherwise cut output by 40 %.

Use Scenario: -48 V telecom rectifier front-end with active OR-ing and hot-swap protection.

IC Role / Device Role / Timing Role: Low-loss primary switch in dual-active-bridge topology managing bidirectional power flow.

Use Value: Source-drain diode V_SD = 0.9–1.5 V supports synchronous rectification mode, reducing forward drop by 0.3 V vs. discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25NF15	TO-220 package; higher R_DS(on) = 0.06 Ω; no 100 % R_g test; R_thJC = 1.5 °C/W	Requires larger heatsink and mechanical mounting; unsuitable for ultra-thin adapter designs	Select when through-hole assembly is required and thermal budget allows 0.75 °C/W higher junction-to-case resistance.
IRF6644TRPBF	Direct-FET™ package; lower R_DS(on) = 0.035 Ω; Q_g = 22 nC; 100 % R_g tested; same TO-252 footprint	Higher cost; superior high-frequency efficiency but reduced avalanche ruggedness (E_AR = 18 mJ)	Select when switching frequency exceeds 500 kHz and avalanche stress is mitigated by circuit design.

Compared with STP25NF15 and IRF6644TRPBF, the SUD25N15-52-BE3 delivers optimal balance of ruggedness (31 mJ E_AR), thermal performance (0.85 °C/W R_thJC), and cost for 100–300 kHz primary-side switching where reliability under transient overload is critical.

Availability

SUD25N15-52-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle continuity.

Supply support for SUD25N15-52-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SUD25N15-52-BE3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered for high-efficiency, high-ruggedness primary-side switching in compact, thermally constrained power supplies.

FAQ

What is the maximum continuous drain current rating for the SUD25N15-52-BE3 at 125 °C case temperature?

The SUD25N15-52-BE3 supports 14.5 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects increased R_DS(on) at elevated temperature (0.109 Ω at 125 °C, 0.145 Ω at 175 °C), ensuring safe operation without exceeding 175 °C junction limit. The SUD25N15-52-BE3 maintains reliable conduction even under sustained thermal stress typical in enclosed power supplies.

Does the SUD25N15-52-BE3 have avalanche capability, and how is it rated?

Yes, the SUD25N15-52-BE3 is rated for repetitive avalanche energy of 31 mJ (L = 0.1 mH, duty cycle ≤ 1 %), with a maximum avalanche current of 25 A. This rating is validated per JEDEC JESD24-11 and enables robust operation during inductive switching transients or short-circuit events without external clamping in many designs. The SUD25N15-52-BE3 leverages its trench structure to sustain this energy without parametric shift or failure.

What is the gate threshold voltage range for the SUD25N15-52-BE3, and why does it matter for drive circuit design?

The SUD25N15-52-BE3 has a gate threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 µA. This tight distribution ensures predictable turn-on behavior across temperature and process variation. For reliable enhancement, gate drive must exceed 4.5 V minimum-especially at high temperature-since V_GS(th) decreases with rising junction temperature. The SUD25N15-52-BE3 achieves full R_DS(on) specification only above 10 V V_GS, making 12 V gate drive ideal for margin.

How does the TO-252 package of the SUD25N15-52-BE3 improve thermal performance compared to TO-220?

The TO-252 (DPAK) package of the SUD25N15-52-BE3 provides a typical junction-to-case thermal resistance of 0.85 °C/W-nearly half that of standard TO-220 packages (~1.5 °C/W)-due to its low-profile, surface-mount construction and direct drain-tab thermal path. This allows higher power density and eliminates mechanical mounting hardware. The SUD25N15-52-BE3 achieves effective cooling using only PCB copper area, reducing system height and assembly cost.

Is the SUD25N15-52-BE3 suitable for synchronous rectification, and what diode characteristics support that use?

Yes, the SUD25N15-52-BE3 integrates a body diode with V_SD = 0.9–1.5 V at I_F = 25 A and t_rr = 95–140 ns, making it viable for synchronous rectification in flyback and forward converters. Its low reverse recovery charge (Q_rr ≈ 120–180 nC, derived from t_rr and dI/dt) minimizes switching loss and EMI. When used as a synchronous rectifier, the SUD25N15-52-BE3 replaces external Schottky diodes while maintaining low forward drop and fast recovery.

SUD25N15-52-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1725 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD25N15-52-BE3 FAQ

1.How can I place an order for SUD25N15-52-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD25N15-52-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD25N15-52-BE3 reliable?

The price and inventory of SUD25N15-52-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD25N15-52-BE3 is usually 5 days.

3.What payment methods are accepted for SUD25N15-52-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD25N15-52-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD25N15-52-BE3?

SUD25N15-52-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD25N15-52-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD25N15-52-BE3?

For technical support, including SUD25N15-52-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD25N15-52-BE3 requirements.

6.How does Aetrix verify that SUD25N15-52-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD25N15-52-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD25N15-52-BE3 meets industry standards.

7.What is the process for return or replacement of SUD25N15-52-BE3?

All SUD25N15-52-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD25N15-52-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD25N15-52-BE3 part is unused and in its original packaging.

Return procedure for SUD25N15-52-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …