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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD25N15-52-T4-E3

Name: SUD25N15-52-T4-E3
Brand: Vishay Siliconix
SKU: SUD25N15-52-T4-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD25N15-52-T4-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD25N15-52-T4-E3.pdf

Description:: MOSFET N-CH 150V 25A TO252

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SUD25N15-52-T4-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 25 A continuous drain current at 25 °C case temperature, and 0.052 Ω R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is optimized for PWM switching in primary-side switch applications.

For engineers reviewing the SUD25N15-52-T4-E3 datasheet, SUD25N15-52-T4-E3 pinout, SUD25N15-52-T4-E3 application, or SUD25N15-52-T4-E3 equivalent, key selection criteria include its TO-252 package thermal performance (R_thJC = 0.85 °C/W), avalanche energy rating (31 mJ), and gate charge profile (Q_g = 33–40 nC) for high-efficiency flyback and resonant converters.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (12 nC / 9 nC). Its 175 °C rated junction supports operation in thermally constrained environments without derating below 125 °C ambient.

The device features 100 % R_g tested gate resistance (1–3 Ω), guaranteed avalanche capability (I_AR = 25 A, E_AR = 31 mJ), and tight V_GS(th) distribution (2–4 V) for predictable turn-on behavior in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands full-line input in 115/230 VAC offline SMPS primary switches
R_DS(on) @ V_GS = 10 V	0.052 Ω - Enables ≤ 33 W conduction loss at 25 A, critical for high-current flyback designs
I_D (continuous, T_C = 25 °C)	25 A - Supports >300 W output power in well-heatsinked TO-252 layouts
Q_g	33–40 nC - Low gate drive power requirement for 100–500 kHz PWM operation
R_thJC	0.85 °C/W (typ.) - Allows direct heatsinking of drain-tab to PCB copper or external heatsink
E_AR	31 mJ - Sustains single-pulse inductive energy during overcurrent or startup fault events
T_J max	175 °C - Permits operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 0–10 V logic-level signal; requires <3 Ω series gate resistor to damp ringing from 1–3 Ω intrinsic R_g
S (Source)	Reference node	Common return for gate drive and load current; connects to power ground plane
D (Drain)	Power output node	High-side switching node tied to drain tab; must be routed with minimum loop area to reduce EMI

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size, reducing conduction loss in space-constrained DPAK
PWM-optimized switching	Q_gd/Q_gs = 1.33 enables clean voltage transition with minimal Miller plateau distortion in hard-switched converters
100 % R_g tested	Ensures consistent gate drive timing across production lots-critical for multi-phase or paralleled MOSFET designs
Drain-tab thermal path	0.85 °C/W junction-to-case enables >100 W dissipation with 25 °C case temperature using 1" × 1" 2-oz copper pad

Applications

AC-DC Flyback Converter	Industrial DC-DC Isolated Supply
Use Scenario: Primary-side switch in 65–300 W universal-input offline flyback converters powering IoT gateways and PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into transformer primary; operates at 65–130 kHz with zero-voltage switching assist. Use Value: 0.052 Ω R_DS(on) and 31 mJ avalanche rating ensure reliable start-up and line surge immunity without snubber redesign.	Use Scenario: Primary-side switch in 120 W isolated 24 V input to ±15 V/5 V outputs for motor drive control boards. IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology; handles repetitive 150 V bus transients during regenerative braking. Use Value: 175 °C T_J rating and 0.85 °C/W R_thJC allow sustained operation at 85 °C ambient with no derating in enclosed cabinets.
LED Driver Power Stage	Telecom DC-DC Brick
Use Scenario: Switching element in constant-current LED drivers for street lighting with 150–300 VDC input from rectified AC or solar MPPT outputs. IC Role / Device Role / Timing Role: High-side switch modulating current through boost or buck-boost LED string; duty cycle varies with dimming command. Use Value: Low Q_g (33–40 nC) reduces gate driver losses, enabling efficient 1–10 kHz PWM dimming without added heat sink.	Use Scenario: Primary switch in 1/4-brick telecom DC-DC converters (36–75 V input to 12 V output) used in base station power systems. IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge or LLC resonant converter primary leg. Use Value: Tight V_GS(th) (2–4 V) and low C_iss (1725 pF) support precise dead-time control and reduced circulating current losses.

AC-DC Flyback Converter

Industrial DC-DC Isolated Supply

Use Scenario: Primary-side switch in 65–300 W universal-input offline flyback converters powering IoT gateways and PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into transformer primary; operates at 65–130 kHz with zero-voltage switching assist.

Use Value: 0.052 Ω R_DS(on) and 31 mJ avalanche rating ensure reliable start-up and line surge immunity without snubber redesign.

Use Scenario: Primary-side switch in 120 W isolated 24 V input to ±15 V/5 V outputs for motor drive control boards.

IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology; handles repetitive 150 V bus transients during regenerative braking.

Use Value: 175 °C T_J rating and 0.85 °C/W R_thJC allow sustained operation at 85 °C ambient with no derating in enclosed cabinets.

LED Driver Power Stage

Telecom DC-DC Brick

Use Scenario: Switching element in constant-current LED drivers for street lighting with 150–300 VDC input from rectified AC or solar MPPT outputs.

IC Role / Device Role / Timing Role: High-side switch modulating current through boost or buck-boost LED string; duty cycle varies with dimming command.

Use Value: Low Q_g (33–40 nC) reduces gate driver losses, enabling efficient 1–10 kHz PWM dimming without added heat sink.

Use Scenario: Primary switch in 1/4-brick telecom DC-DC converters (36–75 V input to 12 V output) used in base station power systems.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge or LLC resonant converter primary leg.

Use Value: Tight V_GS(th) (2–4 V) and low C_iss (1725 pF) support precise dead-time control and reduced circulating current losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25NM15	R_DS(on) = 0.065 Ω @ 10 V; TO-220 package; higher R_thJC (1.5 °C/W)	Larger footprint; requires mechanical heatsink; less suitable for ultra-thin PCBs	Choose when board space allows TO-220 and thermal interface design accommodates higher junction rise
IRF640NPBF	R_DS(on) = 0.18 Ω @ 10 V; 200 V rating; TO-220; no avalanche rating specified	Higher conduction loss; unsuitable for repetitive surge conditions without external clamping	Acceptable only in low-power (<50 W), non-critical industrial supplies where cost dominates thermal performance

Compared with STP25NM15 and IRF640NPBF, the SUD25N15-52-T4-E3 delivers superior thermal efficiency in surface-mount designs, verified avalanche robustness for unregulated line surges, and tighter gate threshold control-making it preferred for compact, high-reliability 100–300 W offline power stages.

Availability

SUD25N15-52-T4-E3 is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial isolated DC-DC supplies, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for SUD25N15-52-T4-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SUD25N15-52-T4-E3 belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered for high-frequency, high-efficiency switching in space-constrained offline power supplies and industrial DC-DC conversion.

FAQ

What is the maximum continuous drain current rating for the SUD25N15-52-T4-E3 at 125 °C case temperature?

The SUD25N15-52-T4-E3 supports 14.5 A continuous drain current at T_C = 125 °C, per its Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained high-temperature operation and must be validated against actual PCB layout and heatsinking in the target application. The SUD25N15-52-T4-E3 maintains safe SOA boundaries down to this condition without pulse limitation.

Does the SUD25N15-52-T4-E3 have a specified avalanche energy rating, and how is it tested?

Yes, the SUD25N15-52-T4-E3 has a repetitive avalanche energy rating of 31 mJ (E_AR) with L = 0.1 mH and duty cycle ≤ 1 %. This is measured per JEDEC standard JESD24-11 using unclamped inductive switching (UIS) test conditions. The SUD25N15-52-T4-E3 is 100 % tested for avalanche capability during production, ensuring robustness against transient overvoltage events in flyback and forward converters.

What is the gate threshold voltage range for the SUD25N15-52-T4-E3, and why does it matter for gate drive design?

The SUD25N15-52-T4-E3 has a gate threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 µA. This tight distribution ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with 5 V logic-level drivers while avoiding partial enhancement in noise-prone environments. Proper gate drive design for the SUD25N15-52-T4-E3 must supply ≥6 V to guarantee full enhancement and minimize R_DS(on) spread.

Can the SUD25N15-52-T4-E3 be used in parallel configurations, and what precautions apply?

Yes, the SUD25N15-52-T4-E3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. However, individual gate resistors (≥5 Ω) and matched PCB trace lengths are required to prevent oscillation. Thermal coupling between devices must be minimized, and the SUD25N15-52-T4-E3's 100 % R_g test ensures gate timing consistency-critical for stable parallel operation in high-current PSUs.

Is the SUD25N15-52-T4-E3 RoHS-compliant and lead-free?

Yes, the SUD25N15-52-T4-E3 is RoHS-compliant per Directive 2002/95/EC and is lead-free (Pb-free), as confirmed by its "-E3" suffix and Vishay's documentation. The device uses matte tin (Sn) termination and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1, enabling standard reflow soldering without special handling. The SUD25N15-52-T4-E3 is qualified for lead-free assembly per IPC/JEDEC J-STD-020.

SUD25N15-52-T4-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1725 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD25N15-52-T4-E3 FAQ

1.How can I place an order for SUD25N15-52-T4-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD25N15-52-T4-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD25N15-52-T4-E3 reliable?

The price and inventory of SUD25N15-52-T4-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD25N15-52-T4-E3 is usually 5 days.

3.What payment methods are accepted for SUD25N15-52-T4-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD25N15-52-T4-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD25N15-52-T4-E3?

SUD25N15-52-T4-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD25N15-52-T4-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD25N15-52-T4-E3?

For technical support, including SUD25N15-52-T4-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD25N15-52-T4-E3 requirements.

6.How does Aetrix verify that SUD25N15-52-T4-E3 is sourced from the original manufacturer or authorized distributors?

All SUD25N15-52-T4-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD25N15-52-T4-E3 meets industry standards.

7.What is the process for return or replacement of SUD25N15-52-T4-E3?

All SUD25N15-52-T4-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD25N15-52-T4-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD25N15-52-T4-E3 part is unused and in its original packaging.

Return procedure for SUD25N15-52-T4-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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