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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD35N10-26P-BE3

Name: SUD35N10-26P-BE3
Brand: Vishay Siliconix
SKU: SUD35N10-26P-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD35N10-26P-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD35N10-26P-BE3.pdf

Description:: MOSFET N-CH 100V 12A/35A DPAK

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Product details

Overview

SUD35N10-26P-BE3 from Vishay Siliconix is an N-channel 100 V, 35 A (T_C = 25 °C), surface-mount TrenchFET® power MOSFET in TO-252AA (DPAK) package, with R_DS(on) = 0.026 Ω at V_GS = 10 V and Q_g = 31 nC - optimized for primary-side switching in offline AC/DC adapters and DC-DC converters.

For engineers reviewing the SUD35N10-26P-BE3 datasheet, SUD35N10-26P-BE3 pinout, SUD35N10-26P-BE3 application, or SUD35N10-26P-BE3 equivalent, key selection criteria include its 100 V V_DS, low gate charge for high-frequency hard-switching, 100 % UIS tested ruggedness, and thermal performance on FR4 with R_thJC = 1.5 °C/W.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) while maintaining fast switching via minimized C_iss (2000 pF) and C_rss (60 pF) at V_DS = 12 V. Its gate threshold voltage (V_GS(th) = 2.5–4.4 V) supports standard 10 V gate drive, and it features a robust body diode with t_rr = 50–75 ns and Q_rr = 100–150 nC for synchronous rectification support.

The device is rated for continuous operation up to T_J = 175 °C, with absolute maximum V_GS = ±20 V and avalanche energy rating E_AS = 55 mJ. Its SOA is defined up to 10 s pulse width, limited by R_DS(on) at high V_DS, and derates linearly above T_C = 25 °C per the published current/power derating curves.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 85–265 VAC input designs with sufficient margin for reflected transients in flyback topologies.
R_DS(on) @ V_GS = 10 V	0.026 Ω - enables <1 W conduction loss at 20 A drain current, critical for efficiency in primary-side switch applications.
I_D (continuous, T_C = 25 °C)	35 A - defines maximum steady-state current capability when mounted on heatsink or thermally enhanced PCB area.
Q_g (total gate charge)	31 nC - determines gate driver power requirement and switching speed; enables efficient operation at 100–500 kHz.
E_AS (single-pulse avalanche)	55 mJ - ensures reliable operation under inductive switching stress without external snubbers in well-designed layouts.
R_thJC	1.5 °C/W - allows direct thermal path from junction to heatsink or copper pour, enabling compact thermal design in space-constrained adapters.
t_rr (body diode)	50–75 ns - supports quasi-resonant and active clamp flyback designs where body diode conduction occurs during dead time.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for low-inductance thermal and power path. Dimensions per Vishay Doc. #71197 (Rev. 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <31 nC charge for full enhancement; gate resistance R_g = 1.5 Ω limits dV/dt-induced turn-on.
D (Drain)	High-side power terminal	Connected internally to exposed metal tab; carries full switched current and must be routed to high-voltage node (e.g., transformer primary).
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; connects to source of control IC or bootstrap capacitor return in half-bridge configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (0.81 Ω·nC), reducing both conduction and switching losses simultaneously.
100 % UIS tested	Each unit validated for unclamped inductive switching reliability - eliminates field failure risk in flyback and forward converter primary switches.
Drain-connected tab	Enables low-thermal-resistance mounting to heatsink or large copper area; reduces junction-to-ambient temperature rise by >30 % vs. non-tab packages.
Body diode with low Q_rr	Q_rr = 100–150 nC minimizes reverse recovery loss and EMI in quasi-resonant topologies where body diode conducts during dead time.
Lead (Pb)-free, RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); compatible with standard reflow profiles up to 260 °C peak.

Applications

AC/DC Adapter Primary Switch	Flyback Converter Main Switch
Use Scenario: 36 W universal-input (85–265 VAC) adapter powering consumer electronics. IC Role / Device Role / Timing Role: High-side main switch in discontinuous conduction mode (DCM) flyback, operating at 65 kHz with 50 % duty cycle. Use Value: Low R_DS(on) (0.026 Ω) cuts conduction loss by ~40 % vs. comparable 40 mΩ MOSFETs; 31 nC Q_g enables clean gate drive with minimal driver dissipation.	Use Scenario: Industrial 24 V output, 60 W flyback supply with wide load range and tight regulation. IC Role / Device Role / Timing Role: Primary-side switch handling 1.2 A RMS drain current; subjected to 100 V reflected spikes during demagnetization. Use Value: 55 mJ E_AS rating absorbs worst-case leakage inductance energy without clamping circuit; 175 °C T_J(max) supports high ambient operation.
DC-DC Buck Converter High-Side Switch	LED Driver Primary-Side Switch
Use Scenario: 12 V input, 5 V/8 A buck converter in telecom power module. IC Role / Device Role / Timing Role: Synchronous high-side FET in fixed-frequency 300 kHz buck stage; driven by integrated controller with 10 V gate drive. Use Value: Fast t_r/t_f (10–15 ns) and low C_oss (180 pF) reduce switching loss and improve light-load efficiency over competing DPAK MOSFETs.	Use Scenario: Isolated LED driver for street lighting with 300–400 VDC bus derived from PFC stage. IC Role / Device Role / Timing Role: Primary switch in constant-current flyback topology; operates with variable duty cycle under analog/PWM dimming control. Use Value: Stable V_GS(th) (2.5–4.4 V) ensures consistent turn-on across temperature; 100 % UIS test guarantees reliability under frequent dimming-induced transient stress.

AC/DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 36 W universal-input (85–265 VAC) adapter powering consumer electronics.

IC Role / Device Role / Timing Role: High-side main switch in discontinuous conduction mode (DCM) flyback, operating at 65 kHz with 50 % duty cycle.

Use Value: Low R_DS(on) (0.026 Ω) cuts conduction loss by ~40 % vs. comparable 40 mΩ MOSFETs; 31 nC Q_g enables clean gate drive with minimal driver dissipation.

Use Scenario: Industrial 24 V output, 60 W flyback supply with wide load range and tight regulation.

IC Role / Device Role / Timing Role: Primary-side switch handling 1.2 A RMS drain current; subjected to 100 V reflected spikes during demagnetization.

Use Value: 55 mJ E_AS rating absorbs worst-case leakage inductance energy without clamping circuit; 175 °C T_J(max) supports high ambient operation.

DC-DC Buck Converter High-Side Switch

LED Driver Primary-Side Switch

Use Scenario: 12 V input, 5 V/8 A buck converter in telecom power module.

IC Role / Device Role / Timing Role: Synchronous high-side FET in fixed-frequency 300 kHz buck stage; driven by integrated controller with 10 V gate drive.

Use Value: Fast t_r/t_f (10–15 ns) and low C_oss (180 pF) reduce switching loss and improve light-load efficiency over competing DPAK MOSFETs.

Use Scenario: Isolated LED driver for street lighting with 300–400 VDC bus derived from PFC stage.

IC Role / Device Role / Timing Role: Primary switch in constant-current flyback topology; operates with variable duty cycle under analog/PWM dimming control.

Use Value: Stable V_GS(th) (2.5–4.4 V) ensures consistent turn-on across temperature; 100 % UIS test guarantees reliability under frequent dimming-induced transient stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 0.032 Ω @ 10 V; Q_g = 35 nC; TO-220 package (higher R_thJA)	Requires heatsink for same power level; less suitable for compact SMT-only designs	Prefer SUD35N10-26P-BE3 for space-constrained, surface-mount flyback adapters needing lower R_DS(on) and better thermal interface.
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V; Q_g = 54 nC; TO-220 package; no UIS rating	Larger conduction loss; higher gate drive loss; not qualified for unclamped inductive switching	Choose SUD35N10-26P-BE3 when designing for high reliability in flyback or forward converters where UIS stress is present.

Compared with STP35NF10 and IRF540NPBF, the SUD35N10-26P-BE3 delivers superior R_DS(on) × Q_g performance, verified UIS ruggedness, and TO-252 thermal efficiency - making it the preferred choice for modern compact, high-efficiency primary-side switching where board space and thermal management are critical.

Availability

SUD35N10-26P-BE3 is available at Aetrix Electronics and suitable for AC/DC adapters, flyback converters, and industrial DC-DC power supplies requiring stable component supply, lead-free compliance, and high-reliability primary-side switching.

Supply support for SUD35N10-26P-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SUD35N10-26P-BE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-frequency, high-reliability primary-side switching in offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for the SUD35N10-26P-BE3 at 70 °C case temperature?

The SUD35N10-26P-BE3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 35 A rating at 25 °C case temperature, and assumes proper PCB copper area or heatsink attachment to maintain the specified junction-to-case thermal resistance of 1.5 °C/W. The SUD35N10-26P-BE3 must not exceed this limit to ensure long-term reliability.

Does the SUD35N10-26P-BE3 have a fully rated avalanche capability, and how is it verified?

Yes, the SUD35N10-26P-BE3 is 100 % unclamped inductive switching (UIS) tested per JEDEC standards, with a single-pulse avalanche energy rating of 55 mJ. This testing validates its ability to safely absorb inductive energy without failure during abnormal conditions such as transformer saturation or shorted secondary windings. The SUD35N10-26P-BE3 datasheet explicitly states "100 % UIS tested" as a key feature, confirming production-level validation - not just design simulation.

What is the gate threshold voltage range for the SUD35N10-26P-BE3, and why does it matter for gate drive design?

The SUD35N10-26P-BE3 has a gate threshold voltage (V_GS(th)) range of 2.5 V to 4.4 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while preventing accidental turn-on from noise. For robust operation, gate drive must exceed 4.4 V to guarantee full enhancement - the SUD35N10-26P-BE3 achieves its rated R_DS(on) only at V_GS ≥ 10 V, so 10 V drive is recommended for minimum conduction loss.

Can the SUD35N10-26P-BE3 be used in synchronous rectification applications?

The SUD35N10-26P-BE3 is not optimized for synchronous rectification due to its N-channel configuration and lack of dedicated low-V_GS(th) or dual-drain design required for secondary-side placement. Its body diode characteristics (V_SD = 0.8–1.2 V, t_rr = 50–75 ns) are suitable for primary-side freewheeling but not for high-efficiency secondary-side rectification. For synchronous rectification, a dedicated low-V_F, logic-level N-channel MOSFET like the SiR872DP would be more appropriate than the SUD35N10-26P-BE3.

What is the thermal resistance from junction to case (R_thJC) for the SUD35N10-26P-BE3, and how does it impact PCB layout?

The SUD35N10-26P-BE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.5 °C/W, with a maximum of 1.8 °C/W. Since the drain is connected to the exposed metal tab, effective thermal performance depends on soldering the tab to a large copper pour or heatsink. Per Vishay Application Note 826, minimum recommended DPAK pads include a 10.67 mm × 5.69 mm thermal pad with thermal vias - improper layout can raise effective R_thJA beyond the rated 15–18 °C/W, causing premature thermal shutdown. The SUD35N10-26P-BE3 thermal performance is highly layout-sensitive.

SUD35N10-26P-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD35N10-26P-BE3 FAQ

1.How can I place an order for SUD35N10-26P-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD35N10-26P-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD35N10-26P-BE3 reliable?

The price and inventory of SUD35N10-26P-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD35N10-26P-BE3 is usually 5 days.

3.What payment methods are accepted for SUD35N10-26P-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD35N10-26P-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD35N10-26P-BE3?

SUD35N10-26P-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD35N10-26P-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD35N10-26P-BE3?

For technical support, including SUD35N10-26P-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD35N10-26P-BE3 requirements.

6.How does Aetrix verify that SUD35N10-26P-BE3 is sourced from the original manufacturer or authorized distributors?

All SUD35N10-26P-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD35N10-26P-BE3 meets industry standards.

7.What is the process for return or replacement of SUD35N10-26P-BE3?

All SUD35N10-26P-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD35N10-26P-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD35N10-26P-BE3 part is unused and in its original packaging.

Return procedure for SUD35N10-26P-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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