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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD35N10-26P-E3

Name: SUD35N10-26P-E3
Brand: Vishay Siliconix
SKU: SUD35N10-26P-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD35N10-26P-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD35N10-26P-E3.pdf

Description:: MOSFET N-CH 100V 35A TO252

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Product details

Overview

SUD35N10-26P-E3 from Vishay Siliconix is an N-channel 100 V TrenchFET® power MOSFET in TO-252 (DPAK) package, rated for 35 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.026 Ω at V_GS = 10 V and Q_g = 31 nC - used as a primary-side switch in offline AC/DC flyback converters.

For engineers reviewing the SUD35N10-26P-E3 datasheet, SUD35N10-26P-E3 pinout, SUD35N10-26P-E3 application, or SUD35N10-26P-E3 equivalent, key selection criteria include its 100 V V_DS, low R_DS(on) at 10 V gate drive, 100% UIS tested ruggedness, thermal resistance R_thJC = 1.5 °C/W, and lead-free TO-252 footprint compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-voltage switching efficiency and avalanche energy handling (E_AS = 55 mJ). Its gate threshold voltage range (2.5–4.4 V) supports standard 5 V and 10 V logic-level drive, while dynamic parameters - C_iss = 2000 pF, C_oss = 180 pF, and Crss = 60 pF - enable predictable hard-switching behavior in SMPS topologies.

The device features a drain-connected tab for direct heatsinking, specified junction-to-case thermal resistance of 1.5 °C/W (typ), and is fully characterized for pulsed operation up to I_DM = 40 A and single-pulse avalanche up to I_AS = 33 A - critical for overcurrent and transient robustness in primary-side regulation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 85–265 VAC input designs with sufficient margin for reflected transients and ringing.
R_DS(on)	0.026 Ω @ V_GS = 10 V - enables <1 W conduction loss at 20 A, reducing thermal load in compact adapters.
I_D (cont)	35 A @ T_C = 25 °C - defines maximum steady-state current when mounted on adequately sized copper heatsink area.
Q_g	31 nC - determines gate driver power requirement and switching speed trade-off in 65–130 kHz flyback designs.
E_AS	55 mJ - ensures reliable operation under unclamped inductive switching events without failure.
R_thJC	1.5 °C/W (typ) - allows precise junction temperature estimation when using external heatsink or copper pour.
V_GS(th)	2.5–4.4 V - guarantees turn-on with standard PWM controllers and provides noise immunity against false triggering.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives PWM signal; requires low-impedance drive path due to 31 nC total gate charge.
D (Drain)	High-side power node	Connected internally to metal tab; must be routed to transformer primary and tied to large copper area for thermal management.
S (Source)	Power return / reference	Serves as local ground reference for gate driver; layout must minimize inductance to prevent oscillation during switching.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling higher current density in TO-252 footprint.
100% UIS tested	Each unit validated for unclamped inductive switching stress, ensuring field reliability in flyback snubberless designs.
Drain-connected tab	Provides low-resistance thermal path (<1.5 °C/W) and eliminates need for isolated mounting hardware in cost-sensitive adapters.
Body diode t_rr = 50 ns (typ)	Reduces reverse recovery losses during synchronous rectification or quasi-resonant transitions in primary-side control schemes.
Lead (Pb)-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity level (MSL-1).

Applications

AC/DC Adapter Primary Switch	Flyback Converter Main Switch
Use Scenario: 36 W universal-input (85–265 VAC) wall adapter powering USB-C PD devices. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from primary winding to secondary via duty-cycle modulation. Use Value: Low 0.026 Ω R_DS(on) minimizes conduction loss at full load, while 100 V rating accommodates 1.4× peak line + margin for surge.	Use Scenario: Isolated 12 V/3 A output flyback supply in industrial PLC I/O module. IC Role / Device Role / Timing Role: Primary-side power switch synchronized to controller IC (e.g., UCC28704) operating at 65 kHz. Use Value: 55 mJ E_AS withstands repeated line surges and transformer leakage spikes without derating.
LED Driver Primary Switch	Offline SMPS Input Stage
Use Scenario: Constant-current LED driver for commercial downlights with TRIAC dimming compatibility. IC Role / Device Role / Timing Role: Primary-side switch in valley-switching quasi-resonant topology to reduce EMI and improve efficiency. Use Value: Fast body diode (t_rr = 50 ns) and low Crss (60 pF) support clean zero-voltage switching transitions.	Use Scenario: Auxiliary power supply for gate drivers and bias rails in motor inverter systems. IC Role / Device Role / Timing Role: Standalone 15 V/0.5 A offline converter feeding isolated DC/DC bias supplies. Use Value: TO-252 package enables simple thermal coupling to chassis ground, eliminating need for discrete heatsink in space-constrained enclosures.

AC/DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 36 W universal-input (85–265 VAC) wall adapter powering USB-C PD devices.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from primary winding to secondary via duty-cycle modulation.

Use Value: Low 0.026 Ω R_DS(on) minimizes conduction loss at full load, while 100 V rating accommodates 1.4× peak line + margin for surge.

Use Scenario: Isolated 12 V/3 A output flyback supply in industrial PLC I/O module.

IC Role / Device Role / Timing Role: Primary-side power switch synchronized to controller IC (e.g., UCC28704) operating at 65 kHz.

Use Value: 55 mJ E_AS withstands repeated line surges and transformer leakage spikes without derating.

LED Driver Primary Switch

Offline SMPS Input Stage

Use Scenario: Constant-current LED driver for commercial downlights with TRIAC dimming compatibility.

IC Role / Device Role / Timing Role: Primary-side switch in valley-switching quasi-resonant topology to reduce EMI and improve efficiency.

Use Value: Fast body diode (t_rr = 50 ns) and low Crss (60 pF) support clean zero-voltage switching transitions.

Use Scenario: Auxiliary power supply for gate drivers and bias rails in motor inverter systems.

IC Role / Device Role / Timing Role: Standalone 15 V/0.5 A offline converter feeding isolated DC/DC bias supplies.

Use Value: TO-252 package enables simple thermal coupling to chassis ground, eliminating need for discrete heatsink in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 0.032 Ω @ 10 V; TO-220 package; higher R_thJA (62 °C/W vs. 15 °C/W for SUD35N10-26P-E3)	Requires heatsink; less suitable for compact SMT-only designs	Choose STP35NF10 only if through-hole assembly and legacy board compatibility are required.
IRF540NPBF	V_DS = 100 V but R_DS(on) = 0.044 Ω @ 10 V; TO-220; no UIS rating specified	Limited avalanche capability; higher conduction loss at >15 A	Select IRF540NPBF only for non-critical, low-duty-cycle applications where cost outweighs ruggedness.

Compared with STP35NF10 and IRF540NPBF, the SUD35N10-26P-E3 offers superior thermal performance in surface-mount form factor, verified UIS robustness, and lower on-resistance - making it preferred for high-density, high-reliability primary-side switching where board space and transient immunity are constrained.

Availability

SUD35N10-26P-E3 is available at Aetrix Electronics and suitable for AC/DC adapters, flyback converters, LED drivers, and auxiliary offline SMPS requiring stable component supply, RoHS-compliant packaging, and proven avalanche ruggedness.

Supply support for SUD35N10-26P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized solutions.

The SUD35N10-26P-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-voltage primary-side switching in compact, cost-sensitive offline power supplies.

FAQ

What is the maximum continuous drain current rating for the SUD35N10-26P-E3 at 70 °C case temperature?

The SUD35N10-26P-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package under real-world heatsinking conditions and must be verified against actual board layout and ambient airflow. The SUD35N10-26P-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 175 °C)" with test condition TC = 70 °C.

Does the SUD35N10-26P-E3 have a specified avalanche energy rating?

Yes, the SUD35N10-26P-E3 has a single-pulse avalanche energy rating of 55 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = 33 A). This value is explicitly listed in the Absolute Maximum Ratings section and confirmed by 100% UIS testing per production lot. The SUD35N10-26P-E3 is designed to survive repetitive unclamped inductive switching events typical in flyback transformer reset phases.

What is the gate threshold voltage range for the SUD35N10-26P-E3, and how does it affect drive requirements?

The SUD35N10-26P-E3 has a gate threshold voltage range of 2.5 V to 4.4 V at T_J = 25 °C, ensuring reliable turn-on with standard 5 V logic-level drivers and compatibility with 10 V gate drive for lowest R_DS(on). This range provides noise margin against spurious turn-on while maintaining low drive power. The SUD35N10-26P-E3 datasheet specifies V_GS(th) under "Static" parameters with test condition V_DS = V_GS, I_D = 250 μA.

Is the SUD35N10-26P-E3 suitable for use in surface-mount designs without additional heatsinking?

The SUD35N10-26P-E3 can operate without external heatsink only at reduced current levels - e.g., ≤10 A continuous at T_A = 25 °C - due to its R_thJA of 15–18 °C/W on 1" × 1" FR4. For full-rated 35 A operation, direct thermal coupling to a large copper pour or external heatsink is mandatory. The SUD35N10-26P-E3 package outline and recommended pads are documented in Vishay Application Note 826 for DPAK thermal optimization.

What is the body diode forward voltage of the SUD35N10-26P-E3 at 10 A source current?

The body diode forward voltage (V_SD) of the SUD35N10-26P-E3 is 0.8–1.2 V at I_S = 10 A and T_J = 25 °C, as specified in the "Drain-Source Body Diode Characteristics" table. This parameter directly impacts conduction loss during freewheeling or synchronous rectification phases. The SUD35N10-26P-E3 exhibits fast reverse recovery (t_rr = 50 ns typ), supporting efficient quasi-resonant operation.

SUD35N10-26P-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD35N10-26P-E3 FAQ

1.How can I place an order for SUD35N10-26P-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD35N10-26P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD35N10-26P-E3 reliable?

The price and inventory of SUD35N10-26P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD35N10-26P-E3 is usually 5 days.

3.What payment methods are accepted for SUD35N10-26P-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD35N10-26P-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD35N10-26P-E3?

SUD35N10-26P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD35N10-26P-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD35N10-26P-E3?

For technical support, including SUD35N10-26P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD35N10-26P-E3 requirements.

6.How does Aetrix verify that SUD35N10-26P-E3 is sourced from the original manufacturer or authorized distributors?

All SUD35N10-26P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD35N10-26P-E3 meets industry standards.

7.What is the process for return or replacement of SUD35N10-26P-E3?

All SUD35N10-26P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD35N10-26P-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD35N10-26P-E3 part is unused and in its original packaging.

Return procedure for SUD35N10-26P-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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